JP2020501370A - Ledキャリアアセンブリを製造する方法 - Google Patents
Ledキャリアアセンブリを製造する方法 Download PDFInfo
- Publication number
- JP2020501370A JP2020501370A JP2019530133A JP2019530133A JP2020501370A JP 2020501370 A JP2020501370 A JP 2020501370A JP 2019530133 A JP2019530133 A JP 2019530133A JP 2019530133 A JP2019530133 A JP 2019530133A JP 2020501370 A JP2020501370 A JP 2020501370A
- Authority
- JP
- Japan
- Prior art keywords
- led
- carrier
- pad
- magnetic
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 21
- 230000005415 magnetization Effects 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 13
- 239000004519 grease Substances 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 4
- 239000011253 protective coating Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 description 23
- IYZWUWBAFUBNCH-UHFFFAOYSA-N 2,6-dichlorobiphenyl Chemical compound ClC1=CC=CC(Cl)=C1C1=CC=CC=C1 IYZWUWBAFUBNCH-UHFFFAOYSA-N 0.000 description 18
- 239000010410 layer Substances 0.000 description 16
- 101100406366 Caenorhabditis elegans pad-2 gene Proteins 0.000 description 15
- 101150108558 PAD1 gene Proteins 0.000 description 15
- 230000008569 process Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000000696 magnetic material Substances 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000011888 foil Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000001351 cycling effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95053—Bonding environment
- H01L2224/95085—Bonding environment being a liquid, e.g. for fluidic self-assembly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
- H01L2224/95143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
- H01L2224/95144—Magnetic alignment, i.e. using permanent magnetic parts in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/08—Magnetic details
- H05K2201/083—Magnetic materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/104—Using magnetic force, e.g. to align particles or for a temporary connection during processing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/166—Alignment or registration; Control of registration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
2 製造装置
10 キャリア
11 LEDダイ
14 導電性グリース
15 防護コーティング
16 カバー層
100 マウント面
100M マグネット上面
101、102 マウントパッド
103 導電性トラック
109 パーティション
110 凹部
Mpad_1、Mpad_2 磁気ダイパッド
hm11 高さ
wm11 幅
dm11 深さ
Malign アライメント磁石
Mext 外部磁石
wm10 幅
hm10 高さ
dm10 深さ
L 液体
F 磁力
D 磁化方向
Claims (15)
- LEDキャリアアセンブリを製造する方法であって、
マウント面を有するキャリアに、多数のLEDダイを受け容れるように配置されたマウントパッドを備えるステップと、
前記キャリアに、アライメント磁石を埋め込むステップと、
多数のLEDダイを提供するステップであり、LEDダイは、多数の磁気ダイパッドを有する、ステップと、
前記アライメント磁石の磁気範囲内で前記キャリアのマウント面の上に前記LEDダイを配置することによって、前記磁気ダイパッドを前記マウントパッドに対して整列させるステップと、
を含む、方法。 - 前記アライメント磁石は、前記キャリアの前記マウント面の下方に最大で2.0mmの深さまで埋め込まれている、
請求項1に記載の方法。 - 前記アライメント磁石の上面は、前記キャリアの前記マウント面と本質的に同一平面である、
請求項2に記載の方法。 - 前記方法は、
前記整列させるステップの以前に、前記マウントパッドに導電性グリースを適用するステップ、及び/又は、
LEDダイパッドに保護コーティングを適用するステップ、を含む、
請求項1乃至3いずれか一項に記載の方法。 - 前記キャリアの前記マウント面を液体の中に沈めるステップと、
前記整列させるステップに備えて、前記液体の上に前記LEDダイを浮かせるステップと、
含む、請求項1乃至4いずれか一項に記載の方法。 - 前記キャリアに関して前記整列されたLEDの位置を固定するために、前記整列されたLEDダイの上にカバー層を適用するステップ、を含む、
請求項1乃至5いずれか一項に記載の方法。 - 前記カバー層は、硬化の際に収縮を受ける材料を含む、
請求項6に記載の方法。 - LEDキャリアアセンブリであって、
多数のLEDダイを受け容れるように配置されたマウントパッドを備えるマウント面を有するキャリアと、
前記キャリアの本体の中に埋め込まれた多数のアライメント磁石であり、LEDダイの前記マウントパッドの下で前記キャリアの本体内に埋め込まれている、アライメント磁石と、
多数のLEDダイであり、磁気ダイパッドと前記キャリアの前記マウント面の下に配置されたアライメント磁石との間の磁力によって、前記マウントパッドに対して整列された多数の磁気ダイパッドを備える、LEDダイと、
を含む、LEDキャリアアセンブリ。 - 前記アライメント磁石の厚さは、少なくとも0.1mmであり、かつ/あるいは、
前記アライメント磁石の側面長さは、最大で2.0mmである、
請求項8に記載のLEDキャリアアセンブリ。 - 前記LEDキャリアアセンブリは、
前記キャリアの前記マウントパッドに関して整列された複数のLEDダイと、
対応する複数のアライメント磁石と、を含む、
請求項8または9に記載のLEDキャリアアセンブリ。 - アライメント磁石は、永久磁石として具現化されている、
請求項8乃至10いずれか一項に記載のLEDキャリアアセンブリ。 - アライメント磁石および磁気LEDダイパッドの寸法、及び/又は、材料特性、及び/又は、相対位置は、前記アライメント磁石と前記磁気LEDダイパッドとの間で、少なくとも0.4mN、より好ましくは少なくとも0.6mN、最も好ましくは少なくとも0.8mNの吸引力を達成するように選択されている、
請求項8乃至11いずれか一項に記載のLEDキャリアアセンブリ。 - アライメント磁石および対応する磁気ダイパッドそれぞれは、前記キャリアの前記マウント面に対して平行な磁化方向を有する、
請求項8乃至12いずれか一項に記載のLEDキャリアアセンブリ。 - 前記LEDダイは、磁気アノードダイパッド及び/又は磁気カソードダイパッドを備える、
請求項8乃至13いずれか一項に記載のLEDキャリアアセンブリ。 - 前記磁気ダイパッドの相対透磁率は、少なくとも5000を含む、
請求項8乃至14いずれか一項に記載のLEDキャリアアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16203176 | 2016-12-09 | ||
EP16203176.9 | 2016-12-09 | ||
PCT/EP2017/080925 WO2018104138A1 (en) | 2016-12-09 | 2017-11-30 | Method of manufacturing an led carrier assembly |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020501370A true JP2020501370A (ja) | 2020-01-16 |
JP7224285B2 JP7224285B2 (ja) | 2023-02-17 |
Family
ID=57542805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019530133A Active JP7224285B2 (ja) | 2016-12-09 | 2017-11-30 | Ledキャリアアセンブリを製造する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11227853B2 (ja) |
EP (1) | EP3552465A1 (ja) |
JP (1) | JP7224285B2 (ja) |
KR (1) | KR102465038B1 (ja) |
CN (1) | CN110024495B (ja) |
TW (1) | TWI774710B (ja) |
WO (1) | WO2018104138A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7072933B1 (ja) * | 2020-12-14 | 2022-05-23 | 晶呈科技股▲分▼有限公司 | 磁気ledダイ移載用アライメントモジュール、及びそのアライメント方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021054508A1 (ko) * | 2019-09-19 | 2021-03-25 | 엘지전자 주식회사 | 반도체 발광소자의 자가조립 장치 |
US11688832B2 (en) * | 2020-04-16 | 2023-06-27 | Creeled, Inc. | Light-altering material arrangements for light-emitting devices |
KR20220053767A (ko) * | 2020-10-22 | 2022-05-02 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
WO2023191151A1 (ko) * | 2022-04-01 | 2023-10-05 | 엘지전자 주식회사 | 반도체 발광 소자 및 디스플레이 장치 |
US11841586B1 (en) | 2022-07-21 | 2023-12-12 | Dell Products L.P. | Position-adjustable backlight |
WO2024024998A1 (ko) * | 2022-07-26 | 2024-02-01 | 엘지전자 주식회사 | 디스플레이 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142731A (ja) * | 2001-10-31 | 2003-05-16 | Toshiba Corp | 発光ダイオード素子及び発光ダイオード装置 |
JP2005174979A (ja) * | 2003-12-08 | 2005-06-30 | Sony Corp | 素子配列方法 |
US20060197213A1 (en) * | 2005-03-07 | 2006-09-07 | Ming-Ren Lian | Magnetic self-assembly for integrated circuit packages |
JP2014090052A (ja) * | 2012-10-30 | 2014-05-15 | Nichia Chem Ind Ltd | 発光素子、発光装置及び発光装置の製造方法 |
JP2015153931A (ja) * | 2014-02-17 | 2015-08-24 | スタンレー電気株式会社 | 半導体発光装置、半導体発光素子、及び、半導体発光装置の製造方法 |
KR20160053481A (ko) * | 2014-11-05 | 2016-05-13 | 엘지이노텍 주식회사 | 발광소자, 이를 포함하는 발광소자 패키지, 및 이를 포함하는 조명시스템 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4942140A (en) * | 1987-03-25 | 1990-07-17 | Mitsubishi Denki Kabushiki Kaisha | Method of packaging semiconductor device |
US5479694A (en) * | 1993-04-13 | 1996-01-02 | Micron Technology, Inc. | Method for mounting integrated circuits onto printed circuit boards and testing |
WO2003063570A2 (en) * | 2002-01-24 | 2003-07-31 | Massachusetts Institute Of Technology | A method and system for magnetically assisted statistical assembly of wafers |
WO2005122706A2 (en) * | 2004-05-31 | 2005-12-29 | Joon-Mo Kang | Method of aligning semiconductor device and semiconductor structure thereof |
US7994608B2 (en) * | 2005-08-24 | 2011-08-09 | Infineon Technologies Ag | Magnetically alignable integrated circuit device |
US20070155025A1 (en) | 2006-01-04 | 2007-07-05 | Anping Zhang | Nanowire structures and devices for use in large-area electronics and methods of making the same |
CN101304059B (zh) * | 2007-05-09 | 2010-09-08 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管组件及发光二极管显示装置 |
WO2009116333A1 (ja) * | 2008-03-18 | 2009-09-24 | 日本電気株式会社 | 可撓性光ディスクの搬送体、光ディスク搬送装置および光ディスク搬送方法 |
US8253210B2 (en) * | 2009-04-30 | 2012-08-28 | Infineon Technologies Ag | Semiconductor device including a magnetic sensor chip |
US8313958B2 (en) * | 2010-05-12 | 2012-11-20 | Intel Corporation | Magnetic microelectronic device attachment |
CN102959708B (zh) * | 2010-06-29 | 2016-05-04 | 柯立芝照明有限公司 | 具有易弯曲基板的电子装置 |
WO2012008253A1 (ja) * | 2010-07-14 | 2012-01-19 | シャープ株式会社 | 微細な物体の配置方法、配列装置、照明装置および表示装置 |
US8698166B2 (en) * | 2010-07-16 | 2014-04-15 | Industrial Technology Research Institute | Light emitting chip package module and light emitting chip package structure and manufacturing method thereof |
US8119427B1 (en) * | 2011-01-06 | 2012-02-21 | Chi Mei Lighting Technology Corporation | Light emitting diode die-bonding with magnetic field |
TW201234677A (en) * | 2011-02-11 | 2012-08-16 | Genesis Photonics Inc | Light emitting diode packaging structure on die bonding with magnetic force |
US8780561B2 (en) * | 2012-03-30 | 2014-07-15 | Raytheon Company | Conduction cooling of multi-channel flip chip based panel array circuits |
JP6126373B2 (ja) * | 2012-12-13 | 2017-05-10 | パナソニック株式会社 | 無線モジュール及び無線通信装置 |
US9777197B2 (en) * | 2013-10-23 | 2017-10-03 | Sunray Scientific, Llc | UV-curable anisotropic conductive adhesive |
TWI533478B (zh) * | 2013-10-14 | 2016-05-11 | 新世紀光電股份有限公司 | 覆晶式發光二極體封裝結構 |
US9613930B2 (en) * | 2013-10-25 | 2017-04-04 | Infineon Technologies Ag | Semiconductor device and method for manufacturing a semiconductor device |
US9721931B2 (en) * | 2015-01-15 | 2017-08-01 | Industrial Technology Research Institute | Semiconductor light emitting device and fabricating method thereof |
CN107438899B (zh) * | 2015-03-31 | 2021-04-30 | 科锐Led公司 | 具有包封的发光二极管和方法 |
US9941450B2 (en) * | 2015-06-18 | 2018-04-10 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor device |
US9711443B2 (en) * | 2015-11-14 | 2017-07-18 | Intel Corporation | Magnetic alignment for flip chip microelectronic devices |
KR20170059068A (ko) * | 2015-11-19 | 2017-05-30 | 삼성전자주식회사 | 광원 모듈, 디스플레이 패널 및 이를 구비한 디스플레이 장치 |
US9935136B2 (en) * | 2015-11-27 | 2018-04-03 | Innolux Corporation | Manufacturing method of display with lighting devices |
-
2017
- 2017-11-30 JP JP2019530133A patent/JP7224285B2/ja active Active
- 2017-11-30 KR KR1020197019700A patent/KR102465038B1/ko active IP Right Grant
- 2017-11-30 EP EP17804917.7A patent/EP3552465A1/en active Pending
- 2017-11-30 US US16/466,901 patent/US11227853B2/en active Active
- 2017-11-30 CN CN201780075841.0A patent/CN110024495B/zh active Active
- 2017-11-30 WO PCT/EP2017/080925 patent/WO2018104138A1/en unknown
- 2017-12-06 TW TW106142652A patent/TWI774710B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142731A (ja) * | 2001-10-31 | 2003-05-16 | Toshiba Corp | 発光ダイオード素子及び発光ダイオード装置 |
JP2005174979A (ja) * | 2003-12-08 | 2005-06-30 | Sony Corp | 素子配列方法 |
US20060197213A1 (en) * | 2005-03-07 | 2006-09-07 | Ming-Ren Lian | Magnetic self-assembly for integrated circuit packages |
JP2014090052A (ja) * | 2012-10-30 | 2014-05-15 | Nichia Chem Ind Ltd | 発光素子、発光装置及び発光装置の製造方法 |
JP2015153931A (ja) * | 2014-02-17 | 2015-08-24 | スタンレー電気株式会社 | 半導体発光装置、半導体発光素子、及び、半導体発光装置の製造方法 |
KR20160053481A (ko) * | 2014-11-05 | 2016-05-13 | 엘지이노텍 주식회사 | 발광소자, 이를 포함하는 발광소자 패키지, 및 이를 포함하는 조명시스템 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7072933B1 (ja) * | 2020-12-14 | 2022-05-23 | 晶呈科技股▲分▼有限公司 | 磁気ledダイ移載用アライメントモジュール、及びそのアライメント方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3552465A1 (en) | 2019-10-16 |
JP7224285B2 (ja) | 2023-02-17 |
US20190304950A1 (en) | 2019-10-03 |
TWI774710B (zh) | 2022-08-21 |
TW201830656A (zh) | 2018-08-16 |
CN110024495B (zh) | 2022-12-30 |
US11227853B2 (en) | 2022-01-18 |
KR20190092516A (ko) | 2019-08-07 |
KR102465038B1 (ko) | 2022-11-09 |
CN110024495A (zh) | 2019-07-16 |
WO2018104138A1 (en) | 2018-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7224285B2 (ja) | Ledキャリアアセンブリを製造する方法 | |
US20190066895A1 (en) | Stacked body and method of producing stacked body | |
US3612955A (en) | Circuit board containing magnetic means for positioning devices | |
KR101510073B1 (ko) | 로우 프로파일 미세 전자 패키지, 그 제조 방법, 및 그것을 포함한 전자 조립체 | |
US8921706B2 (en) | Component-embedded substrate, and method of manufacturing the component-embedded substrate | |
US20100170086A1 (en) | Device, unit, system and method for the magnetically-assisted assembling of chip-scale, and nano and micro-scale components onto a substrate | |
EP3302006A1 (en) | Component carrier comprising at least one heat pipe and method for producing said component carrier | |
JP2018078133A (ja) | コイル内蔵ガラス基板およびビルドアップ基板 | |
KR20130115230A (ko) | 부품 내장 기판의 제조 방법 및 이것을 이용한 부품 내장 기판 | |
JP7072933B1 (ja) | 磁気ledダイ移載用アライメントモジュール、及びそのアライメント方法 | |
EP3637963A1 (en) | Component carrier structures connected by cooperating magnet structures | |
US7482688B2 (en) | Attaching heat sinks to integrated circuit packages | |
JP5353292B2 (ja) | 3次元半導体集積回路及びその製造方法 | |
KR101538099B1 (ko) | 인쇄회로기판 이송용 캐리어 지그 | |
US11058004B2 (en) | Metallic layer as carrier for component embedded in cavity of component carrier | |
JP2011224579A (ja) | レーザ加工機およびレーザ加工機における両面基板固定方法 | |
JP2010278069A (ja) | 接続端子の配設方法 | |
TW201545614A (zh) | 製備殼體以接收用於嵌入式元件印刷電路板之元件的結構和方法 | |
WO2018163888A1 (ja) | 非可逆回路素子およびその製造方法 | |
WO2023032591A1 (ja) | 積層部品の整列方法およびその整列方法を用いた積層セラミック電子部品の製造方法 | |
JP2009117647A (ja) | 半導体装置およびその製造方法 | |
JP2005033068A (ja) | 高周波回路用基板の製造方法及び高周波電子装置 | |
JP6247481B2 (ja) | 部品内蔵型基板の製造方法 | |
JP2010219181A (ja) | 電子部品モジュールおよび電子部品実装方法 | |
JPWO2014115288A1 (ja) | 部品内蔵基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190613 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201125 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220621 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220920 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230207 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7224285 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |