JP7224285B2 - Ledキャリアアセンブリを製造する方法 - Google Patents
Ledキャリアアセンブリを製造する方法 Download PDFInfo
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- JP7224285B2 JP7224285B2 JP2019530133A JP2019530133A JP7224285B2 JP 7224285 B2 JP7224285 B2 JP 7224285B2 JP 2019530133 A JP2019530133 A JP 2019530133A JP 2019530133 A JP2019530133 A JP 2019530133A JP 7224285 B2 JP7224285 B2 JP 7224285B2
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- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000005415 magnetization Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 13
- 239000004519 grease Substances 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 239000011253 protective coating Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- IYZWUWBAFUBNCH-UHFFFAOYSA-N 2,6-dichlorobiphenyl Chemical compound ClC1=CC=CC(Cl)=C1C1=CC=CC=C1 IYZWUWBAFUBNCH-UHFFFAOYSA-N 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- 101100406366 Caenorhabditis elegans pad-2 gene Proteins 0.000 description 15
- 101150108558 PAD1 gene Proteins 0.000 description 15
- 230000008569 process Effects 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000011888 foil Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95053—Bonding environment
- H01L2224/95085—Bonding environment being a liquid, e.g. for fluidic self-assembly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
- H01L2224/95143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
- H01L2224/95144—Magnetic alignment, i.e. using permanent magnetic parts in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/08—Magnetic details
- H05K2201/083—Magnetic materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/104—Using magnetic force, e.g. to align particles or for a temporary connection during processing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/16—Inspection; Monitoring; Aligning
- H05K2203/166—Alignment or registration; Control of registration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
2 製造装置
10 キャリア
11 LEDダイ
14 導電性グリース
15 防護コーティング
16 カバー層
100 マウント面
100M マグネット上面
101、102 マウントパッド
103 導電性トラック
109 パーティション
110 凹部
Mpad_1、Mpad_2 磁気ダイパッド
hm11 高さ
wm11 幅
dm11 深さ
Malign アライメント磁石
Mext 外部磁石
wm10 幅
hm10 高さ
dm10 深さ
L 液体
F 磁力
D 磁化方向
Claims (13)
- LEDキャリアアセンブリを製造する方法であって、
マウント面を有するキャリアに、多数のLEDダイを受け容れるように配置されたマウントパッドを備えるステップと、
アライメント磁石を備えるステップと、
多数のLEDダイを提供するステップであり、LEDダイは、多数の磁気LEDダイパッドを有する、ステップと、
前記アライメント磁石の磁気範囲内で前記キャリアのマウント面の上に前記LEDダイを配置することによって、前記磁気LEDダイパッドを前記マウントパッドに対して整列させるステップと、
前記キャリアに、前記アライメント磁石を埋め込むステップと、
を含み、
前記アライメント磁石は、永久磁石であり、
前記アライメント磁石は、前記キャリアの前記マウント面の上には延在せず、かつ、
前記磁気LEDダイパッドと前記マウントパッドとの間の電気的接続および熱的接続は、半田なしで、磁力によって接触させることにより確立されており、
前記方法は、さらに、
外部アライメント磁石を使用して、前記磁力を一時的に増幅するステップ、
を含む、
方法。 - 前記アライメント磁石は、前記キャリアの前記マウント面の下方に最大で2.0mmの深さまで埋め込まれている、
請求項1に記載の方法。 - 前記アライメント磁石の上面は、前記キャリアの前記マウント面と本質的に同一平面である、
請求項2に記載の方法。 - 前記方法は、
前記整列させるステップの以前に、前記マウントパッドに導電性グリースを適用するステップ、及び/又は、
前記磁気LEDダイパッドに保護コーティングを適用するステップ、を含む、
請求項1乃至3いずれか一項に記載の方法。 - 前記キャリアの前記マウント面を液体の中に沈めるステップと、
前記整列させるステップに備えて、前記液体の上に前記LEDダイを浮かせるステップと、
含む、請求項1乃至4いずれか一項に記載の方法。 - 前記キャリアに関して前記整列されたLEDの位置を固定するために、前記整列されたLEDダイの上にカバー層を適用するステップ、を含む、
請求項1乃至5いずれか一項に記載の方法。 - 前記カバー層は、硬化の際に収縮を受ける材料を含む、
請求項6に記載の方法。 - 前記アライメント磁石の厚さは、少なくとも0.1mmであり、かつ/あるいは、
前記アライメント磁石の側面長さは、最大で2.0mmである、
請求項1に記載の方法。 - 前記LEDキャリアアセンブリは、
前記キャリアの前記マウントパッドに関して整列された複数のLEDダイと、
対応する複数の前記アライメント磁石と、を含む、
請求項1に記載の方法。 - 前記アライメント磁石および前記磁気LEDダイパッドの寸法、及び/又は、材料特性、及び/又は、相対位置は、前記アライメント磁石と前記磁気LEDダイパッドとの間で、少なくとも0.4mNの吸引力を達成するように選択されている、
請求項1乃至9いずれか一項に記載の方法。 - 前記アライメント磁石および対応する前記磁気LEDダイパッドそれぞれは、前記キャリアの前記マウント面に対して平行な磁化方向を有する、
請求項1乃至10いずれか一項に記載の方法。 - 前記LEDダイは、磁気アノードダイパッド及び/又は磁気カソードダイパッドを備える、
請求項1乃至11いずれか一項に記載の方法。 - 前記磁気LEDダイパッドの相対透磁率は、少なくとも5000を含む、
請求項1乃至12いずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16203176 | 2016-12-09 | ||
EP16203176.9 | 2016-12-09 | ||
PCT/EP2017/080925 WO2018104138A1 (en) | 2016-12-09 | 2017-11-30 | Method of manufacturing an led carrier assembly |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020501370A JP2020501370A (ja) | 2020-01-16 |
JP7224285B2 true JP7224285B2 (ja) | 2023-02-17 |
Family
ID=57542805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019530133A Active JP7224285B2 (ja) | 2016-12-09 | 2017-11-30 | Ledキャリアアセンブリを製造する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11227853B2 (ja) |
EP (1) | EP3552465A1 (ja) |
JP (1) | JP7224285B2 (ja) |
KR (1) | KR102465038B1 (ja) |
CN (1) | CN110024495B (ja) |
TW (1) | TWI774710B (ja) |
WO (1) | WO2018104138A1 (ja) |
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WO2021054508A1 (ko) * | 2019-09-19 | 2021-03-25 | 엘지전자 주식회사 | 반도체 발광소자의 자가조립 장치 |
US11688832B2 (en) * | 2020-04-16 | 2023-06-27 | Creeled, Inc. | Light-altering material arrangements for light-emitting devices |
KR20220053767A (ko) * | 2020-10-22 | 2022-05-02 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
TWI760007B (zh) * | 2020-12-14 | 2022-04-01 | 晶呈科技股份有限公司 | 磁性發光二極體晶粒移轉之對準模組及其對準方法 |
CN112838082B (zh) * | 2020-12-31 | 2024-06-04 | 深圳Tcl新技术有限公司 | Led灯板制备方法、磁性led芯片及其制备方法、led显示屏 |
WO2023191151A1 (ko) * | 2022-04-01 | 2023-10-05 | 엘지전자 주식회사 | 반도체 발광 소자 및 디스플레이 장치 |
US11841586B1 (en) | 2022-07-21 | 2023-12-12 | Dell Products L.P. | Position-adjustable backlight |
WO2024024998A1 (ko) * | 2022-07-26 | 2024-02-01 | 엘지전자 주식회사 | 디스플레이 장치 |
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KR102465038B1 (ko) | 2022-11-09 |
TWI774710B (zh) | 2022-08-21 |
EP3552465A1 (en) | 2019-10-16 |
TW201830656A (zh) | 2018-08-16 |
WO2018104138A1 (en) | 2018-06-14 |
US11227853B2 (en) | 2022-01-18 |
JP2020501370A (ja) | 2020-01-16 |
KR20190092516A (ko) | 2019-08-07 |
CN110024495B (zh) | 2022-12-30 |
CN110024495A (zh) | 2019-07-16 |
US20190304950A1 (en) | 2019-10-03 |
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