JP2020150243A - 窒化物半導体基板 - Google Patents
窒化物半導体基板 Download PDFInfo
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- JP2020150243A JP2020150243A JP2019070218A JP2019070218A JP2020150243A JP 2020150243 A JP2020150243 A JP 2020150243A JP 2019070218 A JP2019070218 A JP 2019070218A JP 2019070218 A JP2019070218 A JP 2019070218A JP 2020150243 A JP2020150243 A JP 2020150243A
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- 239000000758 substrate Substances 0.000 title claims abstract description 121
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 107
- 239000010703 silicon Substances 0.000 claims abstract description 107
- 239000013078 crystal Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000008707 rearrangement Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000011084 recovery Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 11
- 230000002040 relaxant effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 105
- 235000012431 wafers Nutrition 0.000 description 56
- 229910002601 GaN Inorganic materials 0.000 description 48
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 230000035882 stress Effects 0.000 description 16
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 241001342895 Chorus Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- HAORKNGNJCEJBX-UHFFFAOYSA-N cyprodinil Chemical compound N=1C(C)=CC(C2CC2)=NC=1NC1=CC=CC=C1 HAORKNGNJCEJBX-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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Abstract
Description
従来、窒化物半導体基板の製造においては、シリコン結晶と窒化ガリウム結晶の格子定数のミスマッチに伴う歪みとエピタキシャル成長後の冷却時に熱伝導率の違いから生ずる熱歪みを、窒化ガリウム側に形成される窒化アルミ二ウムと窒化ガリウムとそれらの混晶からなるバッファー層によって緩和している。本発明は、上記の2つの種類の歪みをシリコン基板側からも緩和して、前記バッファー層上の窒化ガリウム層の貫通転位密度を低減するとともに、クラックの発生や大きな反りが発生しない窒化ガリウム基板の製造を可能とすることを特徴としている。
非常に低抵抗のシリコンの基板に高抵抗の厚いエピタキシャル膜を成長した場合にミスフィット転位が発生することがある。それを回避するための対策は色々検討されてきているが、本法では、逆に、ミスフィット転位が発生するように基板とエピタキシャル成長の条件を決める必要がある。
シリコン基板として、図1(B)に示したミスフィット転位が発生していないエピタキシャル基板を用いた点以外は、(実施例1)と同様にプロセスを進めて、GaN on Siウエーハを得た。得られたGaN on Siウエーハのうち、GaN層(iGaN層とAlGaN層)をX線回折法で評価した。その結果、(102)面の半値幅は447arcsec、(002)面の半値幅は572arcsecであった。ウエーハの外周部約20mm内にもクラックの発生が見られた。
シリコン基板として、20Ωcmの150mmφのCZ鏡面ウエーハを用いた。それ以外は(実施例1)と同様にプロセスを進めて、GaN on Siウエーハを得た。得られたGaN on Siウエーハのうち、GaN層(iGaN層とAlGaN層)をX線回折法で評価した。その結果、(102)面の半値幅は641arcsec、(002)面の半値幅は502arcsecであった。ウエーハの外周部約20mm内にもクラックの発生が見られた。
12、 シリコン単結晶基板(低抵抗)
13、 ミスフィット転位
14、 ミスフィットが発生したエピタキシャルウエーハの反り
15、 ミスフィット未発生のエピタキシャルウエーハの反り
33、 初期層
34、 AlN層
35、 GaN層
36、 バッファー層
37、 活性(iGaN)層
38、 バリア層
41、 ソース電極
42、 ドレイン電極
43、 ゲート電極
Claims (5)
- シリコン単結晶基板上に窒化物半導体がエピタキシャル成長された半導体基板であって、前記シリコン単結晶基板中にミスフィット転位が存在していることを特徴とする半導体基板。
- 前記シリコン単結晶基板中のミスフィット転位の深さ方向の密度が最大となる位置が、前記シリコン単結晶基板と前記窒化物半導体の界面からシリコン単結晶基板側に1.5μmより離れた位置に存在することを特徴とする請求項1に記載の半導体基板。
- シリコン鏡面ウエーハを基板として、その主表面上に該シリコン鏡面ウエーハと格子定数の異なるシリコン単結晶薄膜を気相成長させて、格子定数の違いに基づくミスフィット転位を基板との界面に生じさせたエピタキシャルウエーハを製造する工程と、該エピタキシャルウエーハを前記シリコン単結晶基板として、窒化物半導体をエピタキシャル成長する工程とを含むことを特徴とする請求項1又は請求項2に記載の半導体基板の製造方法。
- シリコン鏡面ウエーハにシリコンエピタキシャル層を気相成長する際に、該エピタキシャル層と格子定数の異なるエピタキシャル層を挟み込むように成長して、格子定数の違いに基づくミスフィット転位をエピタキシャル層中に生じさせたエピタキシャルウエーハを製造する工程と、該エピタキシャルウエーハを前記シリコン単結晶基板として、窒化物半導体をエピタキシャル成長する工程とを含むことを特徴とする請求項1又は請求項2に記載の半導体基板の製造方法。
- シリコン鏡面ウエーハに、リン、ボロン、アンチモン、炭素やゲルマニウムを1種以上、高濃度にイオン注入する工程と、回復熱処理をする工程と、該ウエーハを基板にシリコンエピタキシャル成長して基板との界面にミスフィット転位を生じさせる工程と、該エピタキシャルウエーハを前記シリコン単結晶基板として、窒化物半導体をエピタキシャル成長する工程とを含むことを特徴とする請求項1又は請求項2に記載の半導体基板の製造方法。
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CN202080035782.6A CN113874559A (zh) | 2019-03-13 | 2020-02-18 | 氮化物半导体衬底及其制造方法 |
PCT/JP2020/006306 WO2020184091A1 (ja) | 2019-03-13 | 2020-02-18 | 窒化物半導体基板及びその製造方法 |
EP20770583.1A EP3940123A4 (en) | 2019-03-13 | 2020-02-18 | NITRIDE SEMICONDUCTOR SUBSTRATE |
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JP2014192246A (ja) | 2013-03-26 | 2014-10-06 | Mitsubishi Chemicals Corp | 半導体基板およびそれを用いた半導体素子 |
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