JP2020077886A - 撮像素子 - Google Patents
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- 238000003384 imaging method Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 106
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000006872 improvement Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 58
- 238000009792 diffusion process Methods 0.000 description 24
- 238000001514 detection method Methods 0.000 description 20
- 101100041125 Arabidopsis thaliana RST1 gene Proteins 0.000 description 13
- 101100443250 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG1 gene Proteins 0.000 description 13
- 210000001747 pupil Anatomy 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 101100443251 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG2 gene Proteins 0.000 description 9
- 101100041128 Schizosaccharomyces pombe (strain 972 / ATCC 24843) rst2 gene Proteins 0.000 description 9
- 230000003321 amplification Effects 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000013589 supplement Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L27/14645—Colour imagers
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- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
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- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Abstract
Description
図1は、撮像ユニットの一例としてのデジタルカメラの構成例を示す図である。デジタルカメラ1は、交換レンズ2とカメラボディ3とを有している。交換レンズ2は、マウント部4を介してカメラボディ3に装着される。
次に、撮像素子12の構成例を説明する。本実施形態での撮像素子は、例えば、シリコン基板上にCMOS(相補性金属酸化膜半導体)プロセスを使用して形成されたXYアドレス型の固体撮像素子である。
第2構成例の撮像素子12bは、第1構成例と同じ画素配列であって、受光面の裏面側にゲート層GLYおよび配線層MLYが形成される裏面照射型撮像素子である。第2構成例の撮像素子12bは第1構成例の撮像素子12aの変形例であり、第2構成例で第1構成例と共通する部分には同一の符号を付して重複説明を省略する。
次に、第2構成例の変形例として、第3構成例の撮像素子12cを説明する。図13は、第3構成例の撮像素子12cにおける受光面の裏面(第2面)側からの画素PXの例を示す図である。
(補足1):第1構成例から第3構成例の撮像素子は積層構造であってもよい。例えば、撮像素子12は、第1基板と、第2基板とを積層し、第1基板および第2基板を例えばマイクロバンプなどの接続部MBで電気的に接続して構成してもよい。撮像素子を積層構造とすることで、小さいスペースに回路を集積できるので撮像素子の高画素化が容易となる。
Claims (9)
- 光が入射されるマイクロレンズと、
前記マイクロレンズからの光が入射される第1面と前記第1面とは反対側の第2面とを有し、前記第1面側に配置される第1半導体領域と、前記第1半導体領域と同一導電型の半導体領域であって前記第1半導体領域よりも前記第2面側に形成され、前記第1半導体領域よりも不純物濃度が高い第2半導体領域と、を含む光電変換部と、
前記マイクロレンズの光軸方向において前記マイクロレンズと前記光電変換部との間に配置され、前記マイクロレンズから前記光電変換部へ向かう光の一部を遮る遮光部と、を備え、
前記第2半導体領域は、前記マイクロレンズの光軸方向において前記遮光部が設けられていない位置に形成される撮像素子。 - 請求項1に記載の撮像素子において、
前記第1半導体領域は、前記第1面から前記第2半導体領域に向かって不純物濃度が高くなるように形成される撮像素子。 - 請求項1または請求項2に記載の撮像素子において、
前記第2面側に配置され、前記光電変換部で変換された電荷を転送するための転送ゲートと、
前記転送ゲートにより転送された電荷を蓄積する蓄積部と、
を備える撮像素子。 - 請求項3に記載の撮像素子において、
前記蓄積部は、前記光電変換部と同一導電型の半導体で形成され、前記第2半導体領域の不純物濃度よりも高い不純物濃度を有する撮像素子。 - 請求項3または請求項4に記載の撮像素子において、
前記光電変換部の一部は、前記マイクロレンズの光軸方向において前記遮光部と前記蓄積部との間に配置される撮像素子。 - 請求項3から請求項5のいずれか一項に記載の撮像素子において、
前記光電変換部とは異なる導電型の半導体で形成され、前記光電変換部の電荷が前記蓄積部へ入り込むことを遮蔽する遮蔽部を備える撮像素子。 - 請求項1から請求項6のいずれか一項に記載の撮像素子において、
前記光電変換部とは異なる導電型の半導体で形成され、前記第1面上に形成された第1半導体部を備える撮像素子。 - 請求項7に記載の撮像素子において、
前記光電変換部とは異なる導電型の半導体で形成され、前記第2面上に形成された第2半導体部を備える撮像素子。 - 請求項1から請求項8のいずれか一項に記載の撮像素子において、
前記マイクロレンズの光軸方向において前記光電変換部の厚さは、3μm以上である撮像素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2012256891 | 2012-11-22 | ||
JP2012256891 | 2012-11-22 | ||
JP2018074958A JP2018137467A (ja) | 2012-11-22 | 2018-04-09 | 撮像素子 |
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JP2018074958A Division JP2018137467A (ja) | 2012-11-22 | 2018-04-09 | 撮像素子 |
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JP2020077886A true JP2020077886A (ja) | 2020-05-21 |
JP6965950B2 JP6965950B2 (ja) | 2021-11-10 |
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JP2014548461A Pending JPWO2014080625A1 (ja) | 2012-11-22 | 2013-11-20 | 撮像素子および撮像ユニット |
JP2018074958A Pending JP2018137467A (ja) | 2012-11-22 | 2018-04-09 | 撮像素子 |
JP2020017915A Active JP6965950B2 (ja) | 2012-11-22 | 2020-02-05 | 撮像素子 |
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JP2018074958A Pending JP2018137467A (ja) | 2012-11-22 | 2018-04-09 | 撮像素子 |
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US (3) | US9905604B2 (ja) |
JP (3) | JPWO2014080625A1 (ja) |
KR (2) | KR102425046B1 (ja) |
CN (2) | CN109742098A (ja) |
TW (2) | TWI729303B (ja) |
WO (1) | WO2014080625A1 (ja) |
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US10825858B2 (en) * | 2014-09-24 | 2020-11-03 | Sony Corporation | Image pickup element, image pickup apparatus, and method of manufacturing image pickup element |
TWI747805B (zh) * | 2014-10-08 | 2021-12-01 | 日商索尼半導體解決方案公司 | 攝像裝置及製造方法、以及電子機器 |
KR102263042B1 (ko) * | 2014-10-16 | 2021-06-09 | 삼성전자주식회사 | 픽셀, 상기 픽셀을 포함하는 이미지 센서, 및 상기 픽셀을 포함하는 이미지 처리 시스템 |
TWI709340B (zh) * | 2014-11-27 | 2020-11-01 | 日商索尼半導體解決方案公司 | 固體攝像元件及電子機器 |
JP6537838B2 (ja) * | 2015-01-30 | 2019-07-03 | ルネサスエレクトロニクス株式会社 | 撮像素子 |
US9706142B2 (en) * | 2015-09-23 | 2017-07-11 | Semiconductor Components Industries, Llc | High dynamic range and global shutter image sensor pixels having charge overflow signal detecting structures |
CN112153312B (zh) | 2015-09-30 | 2024-02-02 | 株式会社尼康 | 摄像元件和摄像装置 |
JP6701710B2 (ja) * | 2015-12-14 | 2020-05-27 | 株式会社ニコン | 撮像素子および撮像装置 |
JP6928559B2 (ja) * | 2016-01-29 | 2021-09-01 | タワー パートナーズ セミコンダクター株式会社 | 固体撮像装置 |
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TW201426987A (zh) | 2014-07-01 |
TW201909401A (zh) | 2019-03-01 |
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KR20210013295A (ko) | 2021-02-03 |
CN104937719B (zh) | 2019-02-12 |
US10204957B2 (en) | 2019-02-12 |
US9905604B2 (en) | 2018-02-27 |
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