JP2020068254A - 半導体装置製造方法 - Google Patents
半導体装置製造方法 Download PDFInfo
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- JP2020068254A JP2020068254A JP2018199013A JP2018199013A JP2020068254A JP 2020068254 A JP2020068254 A JP 2020068254A JP 2018199013 A JP2018199013 A JP 2018199013A JP 2018199013 A JP2018199013 A JP 2018199013A JP 2020068254 A JP2020068254 A JP 2020068254A
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Abstract
Description
Z3−COOH (d)
(式中、Z3はカルボキシ基以外の置換基を有していてもよい、飽和もしくは不飽和脂肪族炭化水素、飽和もしくは不飽和脂環式炭化水素、および芳香族炭化水素からなる群より選択される一種、の構造式から1個の水素原子を除去した基を表す)
Z4−OH (e)
(式中、Z4はヒドロキシ基以外の置換基を有していてもよい芳香族炭化水素の構造式から1個の水素原子を除去した基を表す)
<フロー条件>
圧力:100kg/cm2
スピード:6℃/分
ノズル:1mmφ×10mm
溶媒:重クロロホルム
積算回数:1800回
測定温度:25℃
測定温度:40℃
溶離液:テトラヒドロフラン(THF)
試料濃度:0.1〜0.2質量%
流量:1mL/分
標準試料:ポリスチレン
検出器:UV-VIS検出器(商品名「SPD-20A」,株式会社島津製作所製)
1,1’ ウエハ
1T,1T’ 薄化ウエハ
1a,3a 素子形成面
1b,3b 裏面
1R 補強ウエハ
3 ウエハ(ベースウエハ)
2 仮接着剤層
4 接着剤
5 貫通電極
Y ウエハ積層体
Claims (12)
- 素子形成面およびこれとは反対の裏面をそれぞれが有する複数のウエハを、隣り合う二つのウエハにおいて一方のウエハの素子形成面と他方のウエハの裏面とが向かい合う配向で含む、積層構造をそれぞれが有する、少なくとも二つのウエハ積層体を形成するウエハ積層体形成工程と、
前記ウエハ積層体における積層方向の一端に位置し且つ裏面側に隣接ウエハが位置する第1のウエハの素子形成面側から、他端に位置する第2のウエハの素子形成面を超える位置まで、当該ウエハ積層体内を貫通して延びる貫通電極を、各ウエハ積層体に形成する電極形成工程と、
前記電極形成工程を経た各ウエハ積層体における前記第2のウエハの裏面側に対する研削によって当該第2のウエハを薄化して当該裏面側にて前記貫通電極を露出させる、電極端部露出化工程と、
前記電極端部露出化工程を経た少なくとも二つのウエハ積層体を、当該ウエハ積層体間にて貫通電極を電気的に接続しつつ、積層して接合する多層化工程と、を含む半導体装置製造方法。 - 前記電極形成工程は、前記ウエハ積層体において前記第1のウエハの素子形成面側から前記第2のウエハの素子形成面を超える位置まで延びる開口部を形成する工程と、当該開口部内に導電材料を充填する工程とを含む、請求項1に記載の半導体装置製造方法。
- 前記多層化工程では、接合対象である一方のウエハ積層体における第1のウエハの素子形成面側と、他方のウエハ積層体における第1のウエハの素子形成面側との接合が、行われる、請求項1または2に記載の半導体装置製造方法。
- 前記多層化工程では、接合対象である一方のウエハ積層体における第1のウエハの素子形成面側と、他方のウエハ積層体における第2のウエハの裏面側との接合が、行われる、請求項1または2に記載の半導体装置製造方法。
- 前記多層化工程では、接合対象である一方のウエハ積層体における第2のウエハの裏面側と、他方のウエハ積層体における第2のウエハの裏面側との接合が、行われる、請求項1または2に記載の半導体装置製造方法。
- 前記ウエハ積層体形成工程は、素子形成面およびこれとは反対の裏面を有するベースウエハの前記素子形成面側にウエハを接合する工程と、当該ウエハに対する研削によって前記ベースウエハ上に薄化ウエハを形成する工程と、当該薄化ウエハにおける被研削面側に半導体素子を形成する工程とを含む、請求項1から5のいずれか一つに記載の半導体装置製造方法。
- 前記ウエハ積層体形成工程は、前記ベースウエハ上の前記薄化ウエハの素子形成面側にウエハを接合する工程と、当該ウエハに対する研削によって前記ベースウエハ上に薄化ウエハを形成する工程と、当該薄化ウエハにおける被研削面側に半導体素子を形成する工程とを更に含む、請求項6に記載の半導体装置製造方法。
- 前記ウエハ積層体形成工程は、
素子形成面およびこれとは反対の裏面を有するウエハ、支持基板、並びに、前記ウエハの前記素子形成面側および前記支持基板の間の仮接着剤層、を含む積層構造を有する補強ウエハを用意する工程と、
前記補強ウエハにおける前記ウエハをその裏面側から研削して薄化ウエハを形成する工程と、
素子形成面およびこれとは反対の裏面を有するベースウエハの前記素子形成面側と、前記補強ウエハの前記薄化ウエハの裏面側とを、接着剤を介して接合する接合工程と、
前記補強ウエハにおける前記支持基板と前記薄化ウエハの間の前記仮接着剤層による仮接着状態を解除して前記支持基板の取り外しを行う取外し工程と、を含む、請求項1から5のいずれか一つに記載の半導体装置製造方法。 - 前記ウエハ積層体形成工程は、
素子形成面およびこれとは反対の裏面を有するウエハ、支持基板、並びに、前記ウエハの前記素子形成面側および前記支持基板の間の仮接着剤層、を含む積層構造を有する少なくとも一つの追加の補強ウエハを用意する工程と、
各追加の補強ウエハにおける前記ウエハをその裏面側から研削して薄化ウエハを形成する工程と、
前記追加の補強ウエハにおける前記薄化ウエハの裏面側を、前記ベースウエハ上の薄化ウエハの素子形成面側に前記接着剤を介して接合する、少なくとも一つの追加の接合工程と、
前記追加の接合工程ごとに行われる少なくとも一つの、前記追加の補強ウエハにおける前記支持基板と前記薄化ウエハの間の前記仮接着剤層による仮接着状態を解除して前記支持基板の取り外しを行う取外し工程と、を更に含む、請求項8に記載の半導体装置製造方法。 - 前記仮接着剤層を形成するための仮接着剤は、多価ビニルエーテル化合物と、そのビニルエーテル基と反応してアセタール結合を形成可能なヒドロキシ基またはカルボキシ基を二つ以上有して前記多価ビニルエーテル化合物と重合体を形成しうる化合物と、熱可塑性樹脂とを含有する、請求項8または9に記載の半導体装置製造方法。
- 前記接着剤は、重合性基含有ポリオルガノシルセスキオキサンを含有する、請求項8から10のいずれか一つに記載の半導体装置製造方法。
- 前記接合工程は、前記重合体の軟化点より低い温度で前記接着剤を硬化させる硬化処理を含み、
前記取外し工程は、前記重合体の軟化点より高い温度で前記仮接着剤層を軟化させる軟化処理を含む、請求項8から11のいずれか一つに記載の半導体装置製造方法。
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WO2020085259A1 (ja) | 2020-04-30 |
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JP7201387B2 (ja) | 2023-01-10 |
KR20210081381A (ko) | 2021-07-01 |
CN112956020A (zh) | 2021-06-11 |
US20210358884A1 (en) | 2021-11-18 |
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