JP2020047923A - 電子素子及びその製造方法 - Google Patents
電子素子及びその製造方法 Download PDFInfo
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- JP2020047923A JP2020047923A JP2019168250A JP2019168250A JP2020047923A JP 2020047923 A JP2020047923 A JP 2020047923A JP 2019168250 A JP2019168250 A JP 2019168250A JP 2019168250 A JP2019168250 A JP 2019168250A JP 2020047923 A JP2020047923 A JP 2020047923A
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- Prior art keywords
- layer
- electronic device
- carbon
- substrate
- ferroelectric
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- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 174
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910021389 graphene Inorganic materials 0.000 claims description 65
- 239000000463 material Substances 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 238000000231 atomic layer deposition Methods 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 239000003575 carbonaceous material Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 239000002105 nanoparticle Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 191
- 239000010408 film Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002096 quantum dot Substances 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000000864 Auger spectrum Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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Abstract
Description
基板と、
基板上に設けられるゲート電極と、
基板とゲート電極との間に設けられる強誘電体層と、
基板と強誘電体層との間に設けられ、sp2結合構造(bonding structure)を有する炭素層と、を含む電子素子が提供される。
チャネル要素が設けられた基板を準備する段階と、
チャネル要素上に、sp2結合構造を有する炭素層を蒸着する段階と、
炭素層上に強誘電体層を蒸着する段階と、
強誘電体層上にゲート電極を蒸着する段階と、
アニーリング工程を介して、強誘電体層を結晶化させる段階と、を含む電子素子の製造方法が提供される。
110,210,310,410,510 基板
115,315,415,515 チャネル要素
121,321,421,521 ソース
122,322,422,522 ドレイン
130,230,330,430,530 sp2結合構造を有する炭素層
140,240,340,440,540 強誘電体層
150,250,350,450,550 ゲート電極
221 ソース電極
222 ドレイン電極
360,460 絶縁層
540’ 非晶質強誘電膜
Claims (20)
- 基板と、
前記基板上に設けられるゲート電極と、
前記基板と前記ゲート電極との間に設けられる強誘電体層と、
前記基板と前記強誘電体層との間に設けられ、sp2結合構造を有する炭素層と、を含む電子素子。 - 前記基板には、前記ゲート電極と対応する位置に、チャネル要素が設けられており、前記チャネル要素の両側には、ソース及びドレインが設けられていることを特徴とする請求項1に記載の電子素子。
- 前記炭素層は、ナノサイズの結晶を含むナノ結晶質グラフェンを含むことを特徴とする請求項1に記載の電子素子。
- 前記ナノ結晶質グラフェンは、0.5nm〜100nmサイズの結晶を含むことを特徴とする請求項3に記載の電子素子。
- 前記ナノ結晶質グラフェンは、全炭素に対するsp2結合構造を有する炭素の比率が、50%〜99%であることを特徴とする請求項3に記載の電子素子。
- 前記ナノ結晶質グラフェンは、1〜20at%の水素を含むことを特徴とする請求項3に記載の電子素子。
- 前記基板と前記炭素層との間に設けられる絶縁層をさらに含むことを特徴とする請求項1に記載の電子素子。
- 前記炭素層と前記強誘電体層との間に設けられる絶縁層をさらに含むことを特徴とする請求項1に記載の電子素子。
- 前記ゲート電極は、導電性金属、またはsp2結合構造を有する炭素物質を含むことを特徴とする請求項1に記載の電子素子。
- 前記強誘電体層は、Si、Al、Hf及びZrのうち少なくとも一つを含む酸化物を含むことを特徴とする請求項1に記載の電子素子。
- 前記酸化物は、ドーピング物質をさらに含むことを特徴とする請求項10に記載の電子素子。
- 前記炭素層の厚みは、0.4nm〜100nmであることを特徴とする請求項1に記載の電子素子。
- チャネル要素が設けられた基板を準備する段階と、
前記チャネル要素上に、sp2結合構造を有する炭素層を蒸着する段階と、
前記炭素層上に強誘電体層を蒸着する段階と、
前記強誘電体層上にゲート電極を蒸着する段階と、
アニーリング工程を介して、前記強誘電体層を結晶化させる段階と、を含む電子素子の製造方法。 - 前記チャネル要素の両側には、ソース及びドレインが設けられていることを特徴とする請求項13に記載の電子素子の製造方法。
- 前記基板と前記炭素層との間に絶縁層を形成する段階をさらに含むことを特徴とする請求項13に記載の電子素子の製造方法。
- 前記炭素層と前記強誘電体層との間に絶縁層を形成する段階をさらに含むことを特徴とする請求項13に記載の電子素子の製造方法。
- 前記炭素層の蒸着は、化学気相蒸着(CVD)または原子層蒸着(ALD)によって行われることを特徴とする請求項13に記載の電子素子の製造方法。
- 前記炭素層は、ナノサイズの結晶を含むナノ結晶質グラフェンを含むことを特徴とする請求項13に記載の電子素子の製造方法。
- 前記炭素層は、0.4nm〜100nmの厚みに蒸着されることを特徴とする請求項13に記載の電子素子の製造方法。
- 前記強誘電体層の蒸着は、化学気相蒸着(CVD)または原子層蒸着(ALD)によって行われることを特徴とする請求項13に記載の電子素子の製造方法。
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