JP2007513498A - FETゲート電極用のCVDタンタル化合物(TaおよびNを含む化合物の化学的気相堆積方法および半導体電界効果デバイス) - Google Patents
FETゲート電極用のCVDタンタル化合物(TaおよびNを含む化合物の化学的気相堆積方法および半導体電界効果デバイス) Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 55
- 230000005669 field effect Effects 0.000 title claims abstract description 37
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 22
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 150000003482 tantalum compounds Chemical class 0.000 title description 2
- 229910004200 TaSiN Inorganic materials 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000007983 Tris buffer Substances 0.000 claims abstract description 20
- 239000002243 precursor Substances 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 10
- QKIUAMUSENSFQQ-UHFFFAOYSA-N dimethylazanide Chemical compound C[N-]C QKIUAMUSENSFQQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 239000002178 crystalline material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 22
- 230000008021 deposition Effects 0.000 abstract description 6
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 230000006870 function Effects 0.000 description 22
- 239000010408 film Substances 0.000 description 10
- 239000012212 insulator Substances 0.000 description 9
- 238000009795 derivation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
Abstract
【解決手段】電界効果デバイスのゲート材料として用いられるTaおよびNの化合物であって、さらに別の元素を含む可能性があり、約20mΩcmより小さな比抵抗を有し、約0.9より大きなN対Taの元素比を有する化合物が開示される。そのような化合物の代表的な実施態様であるTaSiNは、誘電体層および高k誘電体層を含むSiO2上の一般的なCMOSプロセス温度で安定であり、n型Siの仕事関数に近い仕事関数を有する。第3アミルイミドトリス(ジメチルアミド)Ta(TAIMATA)などのアルキルイミドトリス(ジアルキルアミド)Ta化学種をTa前駆体として用いる化学的気相堆積方法によって、金属性Ta−N化合物を堆積する。この堆積は共形であり、これらのTa−N金属化合物のCMOSプロセスフローへの融通の利く導入を可能にする。TaNまたはTaSiNを用いて加工されたデバイスは、ほぼ理想的な特性を示す。
【選択図】図3
Description
Claims (36)
- Ta前駆体としてアルキルイミドトリス(ジアルキルアミド)Ta化学種を用いる工程と、窒素を供給する前駆体を準備する工程とを含む、TaおよびNを含む化合物を形成する化学的気相堆積(CVD)方法。
- 前記アルキルイミドトリス(ジアルキルアミド)Ta化学種として、第3アミルイミドトリス(ジメチルアミド)Taを選ぶ工程をさらに含む、請求項1に記載の方法。
- 窒素を供給する前記前駆体としてアンモニアを選ぶ工程をさらに含む、請求項1に記載の方法。
- 前記化合物をTaNおよびTaSiNからなる群から選ぶ工程をさらに含む、請求項1に記載の方法。
- 前記化合物中のN対Taの元素比を約0.9より大きくなるように選ぶ工程をさらに含む、請求項4に記載の方法。
- 前記TaSiNのためのSi前駆体をシランおよびジシランからなる群から選ぶ工程をさらに含む、請求項4に記載の方法。
- キャリアガスとして水素を用いる工程をさらに含む、請求項1に記載の方法。
- 前記N対Taの元素比を約0.9より大きくなるように選ぶことをさらに含み、前記化合物は約20mΩcmより小さな比抵抗を有する、請求項1に記載の方法。
- ゲート誘電体およびゲートを有する半導体電界効果デバイスであって、前記ゲートは前記ゲート誘電体上に配置されたTaおよびNを含有する化合物を含み、前記化合物は約20mΩcmより小さな比抵抗を有し、前記化合物中の前記N対Taの元素比は約0.9より大きい半導体電界効果デバイス。
- 前記化合物はTaNまたはTaSiNである、請求項9に記載の電界効果デバイス。
- 前記TaN中の前記N対Taの元素比は約0.9と1.1との間である、請求項10に記載の電界効果デバイス。
- 前記TaNは結晶性の物質構造を有する、請求項11に記載の電界効果デバイス。
- 前記TaSiN中の前記Si対Taの元素比は約0.35と0.5との間である、請求項10に記載の電界効果デバイス。
- 前記TaSiNは実質的に非晶質の物質構造を有する、請求項13に記載の電界効果デバイス。
- 前記TaSiNは、約300mVの範囲内でn−ドープしたSiの仕事関数に等しい仕事関数を有する、請求項10に記載の電界効果デバイス。
- 前記ゲート誘電体は、約5nmより小さな実効酸化膜厚を有する、請求項9に記載の電界効果デバイス。
- 前記ゲート誘電体は、約2nmより小さな実効酸化膜厚を有する、請求項16に記載の電界効果デバイス。
- 前記ゲート誘電体はSiO2を含む、請求項9に記載の電界効果デバイス。
- 前記ゲート誘電体は高k誘電体材料を含む、請求項9に記載の電界効果デバイス。
- 前記デバイスは、Si系のMOSトランジスタである、請求項9に記載の電界効果デバイス。
- 前記デバイスは、NMOSトランジスタである、請求項20に記載の電界効果デバイス。
- 前記NMOSトランジスタは、約0.15Vと0.55Vとの間のしきい値電圧を有する、請求項21に記載の電界効果デバイス。
- ゲート誘電体を有する半導体電界効果デバイスを形成する方法であって、Ta前駆体としてアルキルイミドトリス(ジアルキルアミド)Ta化学種を用いる化学的気相堆積(CVD)を用いることによって、前記ゲート誘電体上にTaおよびNを含む化合物を堆積する工程を含む方法。
- 約20mΩcmより小さな比抵抗を有する前記化合物を選ぶ工程をさらに含む、請求項23に記載の方法。
- 前記化合物中の前記N対Taの元素比を約0.9より大きくなるように選ぶ工程をさらに含む、請求項23に記載の方法。
- 前記化合物をTaNおよびTaSiNからなる群から選ぶ工程をさらに含む、請求項23に記載の方法。
- 前記TaN中の前記N対Taの元素比を約0.9と1.1との間になるように選ぶ工程をさらに含む、請求項26に記載の方法。
- 前記TaSiN中の前記Si対Taの元素比を約0.35と0.5との間になるように選ぶ工程をさらに含む、請求項26に記載の方法。
- 前記アルキルイミドトリス(ジアルキルアミド)Ta化学種として第3アミルイミドトリス(ジメチルアミド)Taを選ぶ工程をさらに含む、請求項23に記載の方法。
- 前記化合物を最高約1000℃に加熱する工程をさらに含む、請求項23に記載の方法。
- ソースおよびドレインを準備する工程をさらに含み、前記化合物を堆積する工程は、前記ソースおよび前記ドレインを準備する工程の前に実行される、請求項23に記載の方法。
- ソースおよびドレインを準備する工程をさらに含み、前記化合物を堆積する工程は、前記ソースおよび前記ドレインを準備する工程の後に実行される、請求項23に記載の方法。
- 前記堆積する工程は、パターン化された表面上に共形に実行される、請求項23に記載の方法。
- 少なくとも一つのチップを含むプロセッサであって、前記チップは、ゲート誘電体およびゲートを有する少なくとも一つの半導体電界効果デバイスを含み、前記ゲートは、前記ゲート誘電体上に配置されたTaおよびNを含有する化合物を含み、前記化合物は約20mΩcmより小さな比抵抗を有し、前記化合物中の前記N対Taの元素比は約0.9より大きいプロセッサ。
- 前記プロセッサはディジタルプロセッサである、請求項34に記載のプロセッサ。
- 前記プロセッサは少なくとも一つのアナログ回路を含む、請求項34に記載のプロセッサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/712,575 US20050104142A1 (en) | 2003-11-13 | 2003-11-13 | CVD tantalum compounds for FET get electrodes |
PCT/EP2004/052927 WO2005047561A1 (en) | 2003-11-13 | 2004-11-11 | Cvd tantalum compounds for fet gate electrodes |
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EP (1) | EP1699945A1 (ja) |
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KR (1) | KR20060112659A (ja) |
CN (1) | CN1902337A (ja) |
IL (1) | IL175594A0 (ja) |
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TW200516167A (en) | 2005-05-16 |
IL175594A0 (en) | 2006-09-05 |
CN1902337A (zh) | 2007-01-24 |
EP1699945A1 (en) | 2006-09-13 |
WO2005047561A1 (en) | 2005-05-26 |
KR20060112659A (ko) | 2006-11-01 |
US20050250318A1 (en) | 2005-11-10 |
US20050104142A1 (en) | 2005-05-19 |
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