JP5704546B2 - 金属電極及びこれを用いた半導体素子 - Google Patents
金属電極及びこれを用いた半導体素子 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 87
- 239000002184 metal Substances 0.000 title claims description 87
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000010408 film Substances 0.000 claims description 164
- 239000010409 thin film Substances 0.000 claims description 39
- 239000007772 electrode material Substances 0.000 claims description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims description 14
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 21
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- 238000002441 X-ray diffraction Methods 0.000 description 19
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- 230000008569 process Effects 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 14
- 238000000137 annealing Methods 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
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- 238000005259 measurement Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
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- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
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- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910017299 Mo—O Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Physical Vapour Deposition (AREA)
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- Semiconductor Integrated Circuits (AREA)
Description
(A)仕事関数の制御
高誘電率薄膜を挟んで半導体と対として用いられる金属電極について検討した結果、第1の電極材料を含有する金属膜と、第2の電極材料を含有し前記高誘電率薄膜と前記金属膜との間に形成した特性制御膜とを備えることにより、仕事関数を安定化できることを見出した。尚、第1の電極材料は、WやTiN等を主成分とするのが好ましい。また、第1の電極材料にポリシリコンを用いてもよい。
また、本発明に係る金属電極13は、酸化膜を挟んで半導体としてのシリコンウェーハ1と一対として用いられ、C(炭素)を添加した特性制御膜10を有することを特徴とする。これにより、結晶構造の配向性と粒径を制御することができる。従って、CMOS回路にこの金属電極13を用いた場合、Vthのばらつきを抑制し、安定的に制御することができる。
本発明は、本実施形態に限定されるものではなく、本発明の要旨の範囲内で種々の変形実施が可能である。例えば、上記した実施形態において、半導体素子としては、本発明に係る金属電極をCMOS回路のゲート電極に適用した場合について説明したが、本発明はこれに限らず、CMOSロジック回路のゲート、フラッシュメモリのコントロールゲートや、DRAMのゲートに、本発明に係る金属電極を適用してもよい。
次に、CMOS回路に用いる場合の金属電極の製造方法について説明する。本発明に係る金属電極を用いたCMOS回路を製造するにあたり、一般的なトランジスタ形成工程と配線形成工程とからなる製造方法を用いることができるが、特徴的部分であるトランジスタ形成工程について以下説明する。尚、トランジスタ形成工程において、本発明に係る金属電極の製造に関する部分については、nMOS及びpMOSで異なるところはない。従って、以下の説明においては、nMOS及びpMOSを区別せずに説明する。
(A)実施例1
以下、実施例について説明する。本実施例においては、基板上に特性制御膜を設けたキャパシタを作製し、前記キャパシタにより本発明に係る金属電極の特性を確認した。
本実施例2では、RuとMoの合金からなる金属電極において、合金の結晶粒径が小さい場合には、Vthのばらつきを抑制できることを確認する。まず、RuとMoの合金で試料を作製した。
次いで、Cを添加することにより、金属電極をアモルファス構造にできること、及び、Vthのばらつきを小さくできることを確認する。
次に、特性制御膜の結晶構造がfcc構造の場合に、Vthのばらつきが小さくなることを確認する。
次に、特性制御膜として、TiNを用いた場合において、Cを添加することにより結晶粒径を小さくできること、及び、これによりVthのばらつきを抑制できることを確認する。尚、高誘電率薄膜としてHfSiON(2.5nm)/SiO2(0.7nm)のトランジスタを用いた。また、高誘電率薄膜上に形成した特性制御膜としてのTiN膜は、膜厚5〜30nmとした。さらに金属膜としてW膜を用い、その膜厚は50nmとした。
Claims (3)
- ゲート絶縁膜として用いられる高誘電率薄膜上に形成され、ゲート電極として用いられる金属電極において、
第1の電極材料を含有する金属膜と、
Moを3mol%〜40mol%及びRuを60mol%〜90mol%含有し、前記高誘電率薄膜と前記金属膜との間に形成された特性制御膜とを備え、
前記高誘電率薄膜と前記特性制御膜との界面にMo酸化膜が形成されることを特徴とする金属電極。 - 前記第1の電極材料は、Ti,V,Cr,Zr,Nb,Mo,Hf,Ta,W、及びこれらの窒化物から選択されることを特徴とする請求項1記載の金属電極。
- 請求項1または2に係る金属電極をNチャネルに用いたことを特徴とする半導体素子。
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JP4220509B2 (ja) * | 2005-09-06 | 2009-02-04 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US7291527B2 (en) * | 2005-09-07 | 2007-11-06 | Texas Instruments Incorporated | Work function control of metals |
JP2007134650A (ja) * | 2005-11-14 | 2007-05-31 | Toshiba Corp | 半導体装置及びその製造方法 |
JP5197986B2 (ja) * | 2007-04-06 | 2013-05-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造装置 |
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2008
- 2008-12-05 WO PCT/JP2008/072164 patent/WO2009072611A1/ja active Application Filing
- 2008-12-05 US US12/746,621 patent/US20110204520A1/en not_active Abandoned
- 2008-12-05 JP JP2009544742A patent/JP5414053B2/ja not_active Expired - Fee Related
- 2008-12-05 EP EP08858001.4A patent/EP2237320B1/en not_active Not-in-force
- 2008-12-08 TW TW097147624A patent/TW200937632A/zh unknown
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WO2009072611A1 (ja) | 2009-06-11 |
JP2014039051A (ja) | 2014-02-27 |
JPWO2009072611A1 (ja) | 2011-04-28 |
US20110204520A1 (en) | 2011-08-25 |
TW200937632A (en) | 2009-09-01 |
EP2237320B1 (en) | 2014-03-19 |
EP2237320A1 (en) | 2010-10-06 |
JP5414053B2 (ja) | 2014-02-12 |
EP2237320A4 (en) | 2011-11-16 |
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