JP2020040853A - SiC基板の評価方法、SiCエピタキシャルウェハの製造方法及びSiCエピタキシャルウェハ - Google Patents
SiC基板の評価方法、SiCエピタキシャルウェハの製造方法及びSiCエピタキシャルウェハ Download PDFInfo
- Publication number
- JP2020040853A JP2020040853A JP2018168954A JP2018168954A JP2020040853A JP 2020040853 A JP2020040853 A JP 2020040853A JP 2018168954 A JP2018168954 A JP 2018168954A JP 2018168954 A JP2018168954 A JP 2018168954A JP 2020040853 A JP2020040853 A JP 2020040853A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- sic substrate
- photoluminescence
- substrate
- evaluating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000011156 evaluation Methods 0.000 title claims abstract description 7
- 238000005424 photoluminescence Methods 0.000 claims abstract description 49
- 230000005284 excitation Effects 0.000 claims abstract description 32
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 238000005259 measurement Methods 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 37
- 239000012535 impurity Substances 0.000 claims description 31
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 39
- 229910010271 silicon carbide Inorganic materials 0.000 description 132
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 127
- 235000012431 wafers Nutrition 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
- G01N23/2258—Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Recrystallisation Techniques (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Description
すなわち、本発明は、上記課題を解決するために、以下の手段を提供する。
本実施形態にかかるSiCエピタキシャルウェハの製造方法は、SiCインゴット作製工程と、SiC基板作製工程と、SiC基板の評価工程と、エピタキシャル膜積層工程と、を有する。
Claims (7)
- SiCインゴットから切り出したSiC基板の第1面に、エピタキシャル膜を積層する前に励起光を照射して、フォトルミネッセンス測定する、SiC基板の評価方法。
- 前記フォトルミネッセンス測定において、前記第1面にスポット照射した前記励起光をスキャンする、請求項1に記載のSiC基板の評価方法。
- 前記フォトルミネッセンス測定は、SiCのバンドギャップより大きなエネルギーを有する前記励起光を前記SiC基板に照射し、前記SiC基板から発光されるフォトルミネッセンスの強度を測定する、請求項1又は2に記載のSiC基板の評価方法。
- 前記SiC基板の総転位密度は10000個/cm2以下である、請求項1〜3のいずれか一項に記載のSiC基板の評価方法。
- 前記SiC基板に含まれる不純物の合計密度が1.0×1020atom/cm3未満である、請求項1〜3のいずれか一項に記載のSiC基板の評価方法。
- 請求項1〜5のいずれか一項に記載のSiC基板の評価方法を用いて前記SiC基板の前記第1面を評価した後に、前記第1面にエピタキシャル膜を積層する、SiCエピタキシャルウェハの製造方法。
- SiC基板と、
前記SiC基板の第1面に積層されたエピタキシャル膜と、を有し、
前記SiC基板の前記第1面において、不純物に起因したフォトルミネッセンスの強度がSiCバンド端に起因したフォトルミネッセンスの強度より強くなる領域が、前記第1面の総面積の50%以下である、SiCエピタキシャルウェハ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018168954A JP7447392B2 (ja) | 2018-09-10 | 2018-09-10 | SiC基板の評価方法及びSiCエピタキシャルウェハの製造方法 |
US16/544,998 US10978359B2 (en) | 2018-09-10 | 2019-08-20 | SiC substrate evaluation method, SiC epitaxial wafer manufacturing method, and SiC epitaxial wafer |
CN201910826266.4A CN110890287A (zh) | 2018-09-10 | 2019-09-03 | SiC基板的评价方法、SiC外延晶片的制造方法及SiC外延晶片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018168954A JP7447392B2 (ja) | 2018-09-10 | 2018-09-10 | SiC基板の評価方法及びSiCエピタキシャルウェハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020040853A true JP2020040853A (ja) | 2020-03-19 |
JP7447392B2 JP7447392B2 (ja) | 2024-03-12 |
Family
ID=69719960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018168954A Active JP7447392B2 (ja) | 2018-09-10 | 2018-09-10 | SiC基板の評価方法及びSiCエピタキシャルウェハの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10978359B2 (ja) |
JP (1) | JP7447392B2 (ja) |
CN (1) | CN110890287A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7185088B1 (ja) * | 2022-06-02 | 2022-12-06 | 昭和電工株式会社 | SiC基板及びSiCインゴット |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
JP2011220744A (ja) * | 2010-04-06 | 2011-11-04 | Nippon Steel Corp | 炭化珪素バルク単結晶基板の欠陥検査方法、及びこの方法を用いた炭化珪素バルク単結晶基板の欠陥検査システム、並びに欠陥情報付き炭化珪素バルク単結晶基板 |
JP2013067523A (ja) * | 2011-09-21 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
JP2013110319A (ja) * | 2011-11-22 | 2013-06-06 | Fujitsu Ltd | 化合物半導体装置の製造方法、基板評価装置及び基板評価方法 |
US20130143396A1 (en) * | 2011-11-23 | 2013-06-06 | University Of South Carolina | Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial |
JP2014099561A (ja) * | 2012-11-15 | 2014-05-29 | Denso Corp | 半導体試料における結晶欠陥解析方法 |
JP2014192163A (ja) * | 2013-03-26 | 2014-10-06 | Mitsubishi Electric Corp | SiCエピタキシャルウエハの製造方法 |
JP2015119056A (ja) * | 2013-12-18 | 2015-06-25 | レーザーテック株式会社 | 欠陥分類方法及び検査装置 |
JP2015521378A (ja) * | 2012-09-11 | 2015-07-27 | ダウ コーニング コーポレーションDow Corning Corporation | SiC上の高耐圧パワー半導体装置 |
JP2015159316A (ja) * | 2010-03-23 | 2015-09-03 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP2016098120A (ja) * | 2014-11-18 | 2016-05-30 | 株式会社デンソー | 炭化珪素単結晶インゴットおよび炭化珪素単結晶基板 |
JP2016121059A (ja) * | 2010-12-27 | 2016-07-07 | 住友電気工業株式会社 | 半導体装置用炭化珪素基板および半導体装置 |
WO2016121628A1 (ja) * | 2015-01-28 | 2016-08-04 | 東レエンジニアリング株式会社 | ワイドギャップ半導体基板の欠陥検査方法及び欠陥検査装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4247007B2 (ja) * | 2003-01-31 | 2009-04-02 | 富士通株式会社 | 半導体ウエハの評価方法および半導体装置の製造方法 |
JP4469396B2 (ja) * | 2008-01-15 | 2010-05-26 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、これから得られる基板及びエピタキシャルウェハ |
JP4887418B2 (ja) * | 2009-12-14 | 2012-02-29 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
US9551672B2 (en) * | 2013-12-18 | 2017-01-24 | Lasertec Corporation | Defect classifying method and optical inspection apparatus for silicon carbide substrate |
KR20170012272A (ko) * | 2014-05-30 | 2017-02-02 | 신닛테츠스미킹 마테리알즈 가부시키가이샤 | 벌크상 탄화 규소 단결정의 평가 방법, 및 그 방법에 사용되는 참조용 탄화 규소 단결정 |
JP2016025241A (ja) | 2014-07-22 | 2016-02-08 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
CN108292686B (zh) * | 2015-12-02 | 2021-02-12 | 三菱电机株式会社 | 碳化硅外延基板及碳化硅半导体装置 |
JP6531729B2 (ja) | 2016-07-19 | 2019-06-19 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
US11094835B2 (en) * | 2017-03-28 | 2021-08-17 | Mitsubishi Electric Corporation | Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device |
-
2018
- 2018-09-10 JP JP2018168954A patent/JP7447392B2/ja active Active
-
2019
- 2019-08-20 US US16/544,998 patent/US10978359B2/en active Active
- 2019-09-03 CN CN201910826266.4A patent/CN110890287A/zh active Pending
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
JP2015159316A (ja) * | 2010-03-23 | 2015-09-03 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP2011220744A (ja) * | 2010-04-06 | 2011-11-04 | Nippon Steel Corp | 炭化珪素バルク単結晶基板の欠陥検査方法、及びこの方法を用いた炭化珪素バルク単結晶基板の欠陥検査システム、並びに欠陥情報付き炭化珪素バルク単結晶基板 |
JP2016121059A (ja) * | 2010-12-27 | 2016-07-07 | 住友電気工業株式会社 | 半導体装置用炭化珪素基板および半導体装置 |
JP2013067523A (ja) * | 2011-09-21 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素基板およびその製造方法 |
JP2013110319A (ja) * | 2011-11-22 | 2013-06-06 | Fujitsu Ltd | 化合物半導体装置の製造方法、基板評価装置及び基板評価方法 |
US20130143396A1 (en) * | 2011-11-23 | 2013-06-06 | University Of South Carolina | Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial |
JP2015521378A (ja) * | 2012-09-11 | 2015-07-27 | ダウ コーニング コーポレーションDow Corning Corporation | SiC上の高耐圧パワー半導体装置 |
JP2014099561A (ja) * | 2012-11-15 | 2014-05-29 | Denso Corp | 半導体試料における結晶欠陥解析方法 |
JP2014192163A (ja) * | 2013-03-26 | 2014-10-06 | Mitsubishi Electric Corp | SiCエピタキシャルウエハの製造方法 |
JP2015119056A (ja) * | 2013-12-18 | 2015-06-25 | レーザーテック株式会社 | 欠陥分類方法及び検査装置 |
JP2016098120A (ja) * | 2014-11-18 | 2016-05-30 | 株式会社デンソー | 炭化珪素単結晶インゴットおよび炭化珪素単結晶基板 |
WO2016121628A1 (ja) * | 2015-01-28 | 2016-08-04 | 東レエンジニアリング株式会社 | ワイドギャップ半導体基板の欠陥検査方法及び欠陥検査装置 |
Also Published As
Publication number | Publication date |
---|---|
US20200083123A1 (en) | 2020-03-12 |
JP7447392B2 (ja) | 2024-03-12 |
CN110890287A (zh) | 2020-03-17 |
US10978359B2 (en) | 2021-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Polyakov et al. | Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage | |
US11249027B2 (en) | SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer | |
US20220223482A1 (en) | EVALUATION METHOD AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER | |
EP2779220B1 (en) | Saturation voltage estimation method and silicon epitaxial wafer manufaturing method | |
JP7447392B2 (ja) | SiC基板の評価方法及びSiCエピタキシャルウェハの製造方法 | |
JP5343721B2 (ja) | シリコン基板の評価方法及び半導体デバイスの製造方法 | |
US10872827B2 (en) | Manufacturing method and evaluation method for SiC device | |
JP5720560B2 (ja) | 半導体基板の評価方法 | |
JP5491433B2 (ja) | エピタキシャル基板のシート抵抗評価方法 | |
JP6369349B2 (ja) | カソードルミネッセンス測定用治具及びカソードルミネッセンスの測定方法 | |
JP2017224695A (ja) | シリコンエピタキシャルウェーハのエピタキシャル層の評価方法及びシリコンエピタキシャルウェーハの製造方法 | |
JP4756374B2 (ja) | 半導体内の電子状態測定方法。 | |
JP7396442B2 (ja) | SiC基板 | |
US20240128129A1 (en) | Luminescence method for the in-line detection of atomic scale defects during fabrication of 4h-sic diodes | |
JP6785642B2 (ja) | 少数キャリア寿命評価方法および少数キャリア寿命評価装置 | |
CN112018166B (zh) | SiC外延晶片 | |
Murel et al. | Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy | |
US10755989B2 (en) | Semiconductor substrate manufacturing method | |
Schifano et al. | Electrical and optical characterization of 4H-SiC diodes for particle detection | |
JP2017174861A (ja) | エピタキシャルウェーハの評価方法及び製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210624 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220524 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220531 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220927 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221223 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20230131 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20230201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230213 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20230307 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230613 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230803 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20231003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231128 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20231205 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240212 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7447392 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |