JP2020038920A - ウェーハ形状データ化方法 - Google Patents
ウェーハ形状データ化方法 Download PDFInfo
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- JP2020038920A JP2020038920A JP2018165807A JP2018165807A JP2020038920A JP 2020038920 A JP2020038920 A JP 2020038920A JP 2018165807 A JP2018165807 A JP 2018165807A JP 2018165807 A JP2018165807 A JP 2018165807A JP 2020038920 A JP2020038920 A JP 2020038920A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000012935 Averaging Methods 0.000 claims description 6
- 238000007306 functionalization reaction Methods 0.000 claims description 3
- 238000012790 confirmation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 108
- 238000005259 measurement Methods 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/17—Function evaluation by approximation methods, e.g. inter- or extrapolation, smoothing, least mean square method
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Data Mining & Analysis (AREA)
- Mathematical Optimization (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Pure & Applied Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Software Systems (AREA)
- General Engineering & Computer Science (AREA)
- Algebra (AREA)
- Evolutionary Biology (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Bioinformatics & Computational Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Operations Research (AREA)
- Probability & Statistics with Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
多項式次数と相関係数との関係を調べた。具体的には、直径300mmのシリコンウェーハ(以下、ウェーハという)を3枚準備して、各ウェーハの厚み形状を、KLA−Tencor社製のフラットネス測定機「WaferSight2」により測定した。なお、WaferSight2は、ウェーハに光を入射し、ウェーハからの反射光と基準面からの反射光との光学干渉によって生じる干渉縞の数と幅から、ウェーハ表面の変位量を計測することを原理とする測定機である。
直径300mmのシリコンウェーハ(以下、ウェーハという)を15枚準備して、各ウェーハに対して図1の手順にしたがって関数化を行い、得られた関数から求まる厚みマップと、測定機から出力された厚みマップとを比較した。具体的には、各ウェーハの厚み形状を、KLA−Tencor社製のフラットネス測定機「WaferSight2」により測定した。
Claims (5)
- ウェーハの形状を関数によりデータ化する方法であって、ウェーハの中心から円周360度を所定の数に分割した角度毎に半径方向の各位置の厚み形状を測定し、6次以上の多項式近似により前記角度毎に半径方向の位置に対するウェーハ厚さの関数化を行い、測定機から出力された厚み形状と前記関数によって出力された厚み形状との比較を行い、ウェーハ全面で所定の誤差以内であることを確認したのち、前記角度毎の関数をウェーハ形状を表すデータとすることを特徴とするウェーハ形状データ化方法。
- 前記角度が10度以下であることを特徴とする請求項1に記載のウェーハ形状データ化方法。
- 前記角度が1度以下であることを特徴とする請求項1又は2に記載のウェーハ形状データ化方法。
- 前記測定機から出力される前記角度毎の厚み形状を平均化して、この平均化した厚み形状を多次多項式で近似したときの相関係数に基づいて、前記関数化するときの多項式の次数を決定することを特徴とする請求項1〜3のいずれか1項に記載のウェーハ形状データ化方法。
- 前記相関係数が0.95以上となる次数の多項式で前記関数化を行うことを特徴とする請求項4に記載のウェーハ形状データ化方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018165807A JP6899080B2 (ja) | 2018-09-05 | 2018-09-05 | ウェーハ形状データ化方法 |
KR1020217005000A KR20210049803A (ko) | 2018-09-05 | 2019-08-01 | 웨이퍼 형상 데이터화 방법 |
US17/268,326 US11928178B2 (en) | 2018-09-05 | 2019-08-01 | Method for creating wafer shape data |
PCT/JP2019/030209 WO2020049911A1 (ja) | 2018-09-05 | 2019-08-01 | ウェーハ形状データ化方法 |
CN201980057835.1A CN112640072B (zh) | 2018-09-05 | 2019-08-01 | 晶片形状数据化方法 |
DE112019004447.8T DE112019004447T5 (de) | 2018-09-05 | 2019-08-01 | Verfahren zum erzeugen von wafer-formdaten |
TW108129209A TWI785266B (zh) | 2018-09-05 | 2019-08-16 | 晶圓形狀資料化方法 |
Applications Claiming Priority (1)
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JP2018165807A JP6899080B2 (ja) | 2018-09-05 | 2018-09-05 | ウェーハ形状データ化方法 |
Publications (2)
Publication Number | Publication Date |
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JP2020038920A true JP2020038920A (ja) | 2020-03-12 |
JP6899080B2 JP6899080B2 (ja) | 2021-07-07 |
Family
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JP2018165807A Active JP6899080B2 (ja) | 2018-09-05 | 2018-09-05 | ウェーハ形状データ化方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11928178B2 (ja) |
JP (1) | JP6899080B2 (ja) |
KR (1) | KR20210049803A (ja) |
CN (1) | CN112640072B (ja) |
DE (1) | DE112019004447T5 (ja) |
TW (1) | TWI785266B (ja) |
WO (1) | WO2020049911A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024062741A1 (ja) * | 2022-09-21 | 2024-03-28 | 株式会社Sumco | ウェーハ形状のモデル化方法、およびウェーハの製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111430260B (zh) * | 2020-05-15 | 2023-07-07 | 长江存储科技有限责任公司 | 一种晶圆检测方法及装置 |
CN111952208A (zh) * | 2020-07-17 | 2020-11-17 | 徐州鑫晶半导体科技有限公司 | 侦测晶圆设定范围内平整度变化的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004020286A (ja) * | 2002-06-13 | 2004-01-22 | Shin Etsu Handotai Co Ltd | 半導体ウエーハの形状評価方法及び形状評価装置 |
JP2012501553A (ja) * | 2008-08-28 | 2012-01-19 | ケーエルエー−テンカー・コーポレーション | 局部的な基板の幾何的特性評価 |
JP2012146581A (ja) * | 2011-01-14 | 2012-08-02 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
JP2014509070A (ja) * | 2011-01-07 | 2014-04-10 | ケーエルエー−テンカー コーポレイション | 表面計測ツールにおける改善された局部的特徴定量化のための方法及びシステム |
US20140114597A1 (en) * | 2012-10-19 | 2014-04-24 | Kla-Tencor Corporation | Systems, Methods and Metrics for Wafer High Order Shape Characterization and Wafer Classification Using Wafer Dimensional Geometry Tool |
JP2017204609A (ja) * | 2016-05-13 | 2017-11-16 | スピードファム株式会社 | 断面形状測定方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4610151B2 (ja) * | 1999-12-30 | 2011-01-12 | ケーエルエー−テンカー・コーポレーション | 雑音低減方法、雑音低減装置およびウエ−ハ形状の再構成方法 |
SG123601A1 (en) * | 2003-03-10 | 2006-07-26 | Asml Netherlands Bv | Focus spot monitoring in a lithographic projectionapparatus |
JP4825569B2 (ja) * | 2006-04-12 | 2011-11-30 | 株式会社東芝 | 測定座標設定システム及び測定座標設定方法 |
US8843875B2 (en) * | 2012-05-08 | 2014-09-23 | Kla-Tencor Corporation | Measurement model optimization based on parameter variations across a wafer |
US10330608B2 (en) * | 2012-05-11 | 2019-06-25 | Kla-Tencor Corporation | Systems and methods for wafer surface feature detection, classification and quantification with wafer geometry metrology tools |
US9430593B2 (en) * | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
JP5690981B1 (ja) | 2013-06-21 | 2015-03-25 | Hoya株式会社 | マスクブランク用基板、マスクブランク、転写用マスク及びこれらの製造方法並びに半導体デバイスの製造方法 |
JP6436664B2 (ja) | 2014-07-14 | 2018-12-12 | 住友化学株式会社 | 基板の検査装置及び基板の検査方法 |
JP6465015B2 (ja) * | 2015-12-18 | 2019-02-06 | 株式会社Sumco | 半導体ウェーハの厚み分布測定システムおよび半導体ウェーハ研磨システム、半導体ウェーハの厚み分布測定方法および半導体ウェーハの厚み取り代分布測定方法、ならびに半導体ウェーハの研磨方法 |
JP6635003B2 (ja) * | 2016-11-02 | 2020-01-22 | 株式会社Sumco | 半導体ウェーハの両面研磨方法 |
-
2018
- 2018-09-05 JP JP2018165807A patent/JP6899080B2/ja active Active
-
2019
- 2019-08-01 DE DE112019004447.8T patent/DE112019004447T5/de active Pending
- 2019-08-01 KR KR1020217005000A patent/KR20210049803A/ko not_active Application Discontinuation
- 2019-08-01 US US17/268,326 patent/US11928178B2/en active Active
- 2019-08-01 CN CN201980057835.1A patent/CN112640072B/zh active Active
- 2019-08-01 WO PCT/JP2019/030209 patent/WO2020049911A1/ja active Application Filing
- 2019-08-16 TW TW108129209A patent/TWI785266B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004020286A (ja) * | 2002-06-13 | 2004-01-22 | Shin Etsu Handotai Co Ltd | 半導体ウエーハの形状評価方法及び形状評価装置 |
JP2012501553A (ja) * | 2008-08-28 | 2012-01-19 | ケーエルエー−テンカー・コーポレーション | 局部的な基板の幾何的特性評価 |
JP2014509070A (ja) * | 2011-01-07 | 2014-04-10 | ケーエルエー−テンカー コーポレイション | 表面計測ツールにおける改善された局部的特徴定量化のための方法及びシステム |
JP2012146581A (ja) * | 2011-01-14 | 2012-08-02 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
US20140114597A1 (en) * | 2012-10-19 | 2014-04-24 | Kla-Tencor Corporation | Systems, Methods and Metrics for Wafer High Order Shape Characterization and Wafer Classification Using Wafer Dimensional Geometry Tool |
JP2017204609A (ja) * | 2016-05-13 | 2017-11-16 | スピードファム株式会社 | 断面形状測定方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024062741A1 (ja) * | 2022-09-21 | 2024-03-28 | 株式会社Sumco | ウェーハ形状のモデル化方法、およびウェーハの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20210164770A1 (en) | 2021-06-03 |
JP6899080B2 (ja) | 2021-07-07 |
CN112640072A (zh) | 2021-04-09 |
WO2020049911A1 (ja) | 2020-03-12 |
KR20210049803A (ko) | 2021-05-06 |
TW202014991A (zh) | 2020-04-16 |
US11928178B2 (en) | 2024-03-12 |
CN112640072B (zh) | 2024-03-22 |
TWI785266B (zh) | 2022-12-01 |
DE112019004447T5 (de) | 2021-05-20 |
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