JP2020031098A - 半導体装置 - Google Patents
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- JP2020031098A JP2020031098A JP2018154593A JP2018154593A JP2020031098A JP 2020031098 A JP2020031098 A JP 2020031098A JP 2018154593 A JP2018154593 A JP 2018154593A JP 2018154593 A JP2018154593 A JP 2018154593A JP 2020031098 A JP2020031098 A JP 2020031098A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- 239000012535 impurity Substances 0.000 claims abstract description 89
- 238000009826 distribution Methods 0.000 claims abstract description 48
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 209
- 238000012986 modification Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Abstract
Description
図1は、第1実施形態に係る半導体装置1を示す模式断面図である。
図2は、第1実施形態に係る半導体装置1を示す模式平面図である。図1は、図2中に示すA−A線に沿った断面を示す模式図である。
図1に示すように、半導体装置1は、N形カソード層10と、I層20と、P形アノード層30と、を備える。I層20は、N形カソード層10とP形アノード層30との間に設けられる。I層20は、例えば、N形カソード層10よりも低濃度のN形不純物を含むN形半導体層である。
絶縁膜45は、P形アノード層30の外縁部33と、ガードリング層40の内縁と、P形アノード層30とガードリング層40との間に露出したI層20と、を覆うように設けられる。絶縁膜45は、例えば、シリコン酸化膜である。パッシベーション膜75は、アノード電極60の一部と、絶縁膜45と、ガードリング電極70と、を覆うように設けられる。パッシベーション膜75は、例えば、絶縁性の樹脂膜である。
図9および図10は、第2実施形態に係る半導体装置6を示す模式図である。
図9は、図10中に示すD−D線に沿った断面を表す模式図である。図10は、半導体装置6のP形アノード層30およびガードリング層40の配置を示す模式平面図である。
Claims (6)
- 第1導電形の第1半導体層と、
前記第1半導体層上に設けられた第2導電形の第2半導体層であって、その一部が選択的に除去されたリセス部と、前記リセス部を囲む外縁部と、を有する第2半導体層と、
前記第1半導体層上に設けられ、前記第1半導体層と前記第2半導体層の前記リセス部との間の第1境界に沿った第1方向において前記第2半導体層から離間して配置された第2導電形の第3半導体層と、
を備え、
前記第1境界と交差する第2方向における前記第1境界近傍の第2導電形不純物分布は、前記第2半導体層の前記外縁部と前記第1半導体層との間の第2境界近傍における前記第2方向の第2導電形不純物分布と略同一であり、
前記第2境界近傍における前記第2方向の第2導電形不純物分布は、前記第1半導体層と前記第3半導体層との間の第3境界近傍における前記第2方向の第2導電形不純物分布と略同一である半導体装置。 - 前記第2半導体層の前記リセス部に電気的に接続された電極と、
前記リセス部と前記電極との間に設けられ、前記第1境界近傍の第2導電形不純物よりも高濃度の第2導電形不純物を含むコンタクト層と、
をさらに備えた請求項1記載の半導体装置。 - 前記第2半導体層は、複数の前記リセス部を有する請求項1または2に記載の半導体装置。
- 前記第2半導体層は、前記リセス部に囲まれた島状の凸部を有する請求項1または2に記載の半導体装置。
- 第1導電形の第1半導体層と、
前記第1半導体層上に設けられた第2導電形の第2半導体層であって、その一部を選択的に除去したリセス部と、前記リセス部を囲む外縁部と、を有する第2半導体層と、
を備え、
前記リセス部は、前記第1半導体層に接する第1部分および第2部分を含み、
前記第2部分は、前記第1部分の第2導電形不純物よりも低濃度の第2導電形不純物を含み、
前記第1部分および前記第2部分は、前記第1半導体層と前記第1部分との間の第1境界に沿った第1方向に沿って配置され、
前記第1境界と交差する第2方向における前記第1境界近傍の第2導電形不純物分布は、前記第2半導体層の前記外縁部と前記第1半導体層との間の第2境界近傍における前記第2方向の第2導電形不純物分布と略同一である半導体装置。 - 前記第1半導体層上に設けられ、前記第1方向において前記第2半導体層から離間して配置された第2導電形の第3半導体層をさらに備え、
前記第2境界近傍における前記第2方向の第2導電形不純物分布は、前記第1半導体層と前記第3半導体層の間の第3境界近傍における前記第2方向の第2導電形不純物分布と略同一である請求項5記載の半導体装置。
Priority Applications (3)
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JP2018154593A JP6935373B2 (ja) | 2018-08-21 | 2018-08-21 | 半導体装置 |
US16/234,657 US10700217B2 (en) | 2018-08-21 | 2018-12-28 | Semiconductor device |
CN201910011234.9A CN110854207A (zh) | 2018-08-21 | 2019-01-07 | 半导体装置 |
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JP (1) | JP6935373B2 (ja) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114203829A (zh) * | 2021-11-30 | 2022-03-18 | 深圳基本半导体有限公司 | 一种frd结构及其制作方法和应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275719A (ja) * | 1992-03-26 | 1993-10-22 | Fuji Electric Co Ltd | 半導体素子およびその製造方法 |
JPH10335679A (ja) * | 1997-06-02 | 1998-12-18 | Fuji Electric Co Ltd | ダイオードとその製造方法 |
US20140124832A1 (en) * | 2012-11-06 | 2014-05-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS618517A (ja) | 1984-06-25 | 1986-01-16 | Matsushita Electric Ind Co Ltd | 燃焼安全装置 |
JP4167313B2 (ja) | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
JP3618517B2 (ja) | 1997-06-18 | 2005-02-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH11274516A (ja) | 1998-03-18 | 1999-10-08 | Toshiba Corp | 電力用半導体装置 |
JP2009141062A (ja) * | 2007-12-05 | 2009-06-25 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5741069B2 (ja) * | 2011-03-02 | 2015-07-01 | トヨタ自動車株式会社 | 半導体装置 |
JP2014063980A (ja) * | 2012-08-30 | 2014-04-10 | Toshiba Corp | 半導体装置 |
JP2014103376A (ja) * | 2012-09-24 | 2014-06-05 | Toshiba Corp | 半導体装置 |
-
2018
- 2018-08-21 JP JP2018154593A patent/JP6935373B2/ja active Active
- 2018-12-28 US US16/234,657 patent/US10700217B2/en active Active
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- 2019-01-07 CN CN201910011234.9A patent/CN110854207A/zh not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275719A (ja) * | 1992-03-26 | 1993-10-22 | Fuji Electric Co Ltd | 半導体素子およびその製造方法 |
JPH10335679A (ja) * | 1997-06-02 | 1998-12-18 | Fuji Electric Co Ltd | ダイオードとその製造方法 |
US6175143B1 (en) * | 1997-06-02 | 2001-01-16 | Fuji Electric Co., Ltd. | Schottky barrier |
US20140124832A1 (en) * | 2012-11-06 | 2014-05-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2014112637A (ja) * | 2012-11-06 | 2014-06-19 | Toshiba Corp | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114203829A (zh) * | 2021-11-30 | 2022-03-18 | 深圳基本半导体有限公司 | 一种frd结构及其制作方法和应用 |
CN114203829B (zh) * | 2021-11-30 | 2023-02-28 | 深圳基本半导体有限公司 | 一种frd结构及其制作方法和应用 |
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US20200066920A1 (en) | 2020-02-27 |
JP6935373B2 (ja) | 2021-09-15 |
US10700217B2 (en) | 2020-06-30 |
CN110854207A (zh) | 2020-02-28 |
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