JP2020027944A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
Description
Ethyl Ortho Silicate)、PE−TEOS(Plasma Enhanced Tetra Ethyl Ortho Silicate)、O3−TEOS(O3−Tetra Ethyl Ortho Silicate)、USG(Undoped Silicate Glass)、PSG(PhosphoSilicate Glass)、BSG(Borosilicate Glass)、BPSG(BoroPhosphoSilicate Glass)、FSG(Fluoride Silicate Glass)、SOG(Spin On Glass)、TOSZ(Tonen SilaZene)、又はこれらの組み合わせからなされる。
半導体チップの各々のエッジ領域23に残余工程モニターリング構造体30Rが残留する。ここで、残余工程モニターリング構造体30Rはアライメントホール123hを有するダミー金属パターン123bの一部を含む。
20 スクライブライン領域
30 工程モニターリング構造体
100 半導体基板
101 半導体集積回路
103 層間絶縁膜
110 下部絶縁膜
120 ダム構造体
120d ダミー金属構造体
121a 金属配線
121b ダミー金属配線
122a 金属ビア
122b ダミー金属ビア
123a チップパッド
123b ダミー金属パターン
130 上部絶縁膜
140 再配線層
Claims (25)
- チップ領域及び前記チップ領域周辺のエッジ領域を含む半導体基板と、
前記半導体基板上に配置された下部絶縁膜及び上部絶縁膜と、
前記チップ領域で前記上部絶縁膜を貫通し、チップパッドと連結された再配線チップパッドと、
前記エッジ領域の一部に提供される工程モニターリング構造体と、
前記エッジ領域に配置され、前記上部絶縁膜の上面より低い上面を有するダミー要素と、を含む半導体装置。 - 前記ダミー要素は、前記工程モニターリング構造体の一部であり、前記ダミー要素は、
前記下部絶縁膜内で互いに離隔されて配置されるダミー金属構造体と、
前記ダミー金属構造体を覆うダミー金属パターンと、を含み、
前記上部絶縁膜は、前記ダミー金属パターンを覆う請求項1に記載の半導体装置。 - 前記ダミー要素は、前記エッジ領域で前記上部絶縁膜を貫通する複数のダミー再配線パターンを含む請求項1に記載の半導体装置。
- 平面視で、前記ダミー再配線パターンは、前記工程モニターリング構造体の周囲に位置する請求項3に記載の半導体装置。
- 前記工程モニターリング構造体は、前記上部絶縁膜内に配置されて前記ダミー金属パターンと接触する再配線アライメントパターンを含む請求項2に記載の半導体装置。
- 前記ダミー金属構造体の各々は、一方向に沿って延在され、積層されたダミー金属配線及び前記ダミー金属配線の間に連結されたダミー金属ビアを含む請求項2に記載の半導体装置。
- 前記ダミー金属パターンは、平面視で前記ダミー金属構造体と重畳される請求項2に記載の半導体装置。
- 前記ダミー金属パターンは、互いに離隔されるアライメントホールを有し、前記アライメントホールは、前記上部絶縁膜で満たされる請求項2に記載の半導体装置。
- 前記上部絶縁膜は、前記工程モニターリング構造体と離隔されて前記エッジ領域で前記下部絶縁膜の一部分を露出させるオープニングを有する請求項1に記載の半導体装置。
- 前記チップ領域で前記下部絶縁膜は、第1厚さを有し、前記オープニングによって露出された前記下部絶縁膜の前記一部分は、前記第1厚さより小さい第2厚さを有する請求項9に記載の半導体装置。
- 前記下部絶縁膜は、前記上部絶縁膜より低い誘電率を有する誘電物質を含む請求項1に記載の半導体装置。
- 前記ダミー金属構造体は、第1金属物質を含み、前記ダミー金属パターンは、前記第1金属物質と異なる第2金属物質を含む請求項2に記載の半導体装置。
- 前記上部絶縁膜は、前記チップパッドを覆う第1上部絶縁膜、前記第1上部絶縁膜上に積層された第2上部絶縁膜及び第3上部絶縁膜を含み、前記第2上部絶縁膜は、前記第1上部絶縁膜及び前記第3上部絶縁膜と異なる絶縁物質を含む請求項1に記載の半導体装置。
- 前記チップ領域の前記半導体基板上に提供された半導体集積回路と、
前記チップ領域の前記下部絶縁膜内に配置され、前記半導体集積回路と前記チップパッドを連結する金属配線及び金属ビアと、をさらに含む請求項1に記載の半導体装置。 - 前記チップ領域の前記上部絶縁膜上に配置されて、前記再配線チップパッドの一部を露出させるパッシベーション層をさらに含み、前記パッシベーション層は、前記エッジ領域に延長されて前記工程モニターリング構造体を覆う請求項1に記載の半導体装置。
- チップ領域及び前記チップ領域周辺のエッジ領域を含む半導体基板と、
前記半導体基板上に配置された下部絶縁膜及び上部絶縁膜と、
前記チップ領域で前記上部絶縁膜を貫通してチップパッドと連結される再配線チップパッドと、
前記エッジ領域に配置された工程モニターリングパターンと、
前記エッジ領域で前記上部絶縁膜を貫通するダミー再配線パターンを含み、前記ダミー再配線パターンは、平面視で前記工程モニターリングパターンの周囲に配置される半導体装置。 - 前記ダミー再配線パターンは、
第1幅を有し、平面視で前記工程モニターリングパターンを囲む第1ダミー再配線パターンと、
前記第1ダミー再配線パターンと前記工程モニターリングパターンとの間に配置され、前記第1幅より小さい第2幅を有する第2ダミー再配線パターンと、を含む請求項16に記載の半導体装置。 - 前記第1ダミー再配線パターンの底面は、前記第2ダミー再配線パターンの底面より低いレベルに位置する請求項17に記載の半導体装置。
- 前記ダミー再配線パターンは、前記下部絶縁膜と接触する底部及び前記底部から延在される側壁部を含む請求項16に記載の半導体装置。
- 前記チップ領域の前記上部絶縁膜上に配置されて、前記再配線チップパッドの一部を露出させるパッシベーション層をさらに含み、
前記パッシベーション層は、前記エッジ領域に延長されて前記ダミー再配線パターンの前記底部及び前記側壁部によって定義されたギャップ領域を満たす請求項19に記載の半導体装置。 - 前記工程モニターリングパターンは、前記上部絶縁膜上に配置され、前記再配線チップパッドと同一な金属物質を含む請求項16に記載の半導体装置。
- 前記工程モニターリングパターンは、前記下部絶縁膜上に配置され、前記チップパッドと同一な金属物質を含む請求項16に記載の半導体装置。
- 前記下部絶縁膜は、前記上部絶縁膜より低い誘電率を有する誘電物質を含む請求項16に記載の半導体装置。
- 前記上部絶縁膜は、前記工程モニターリングパターンと離隔されて前記エッジ領域で前記下部絶縁膜の一部分を露出させるオープニングを有する請求項16に記載の半導体装置。
- 前記チップ領域の前記半導体基板上に提供された半導体集積回路と、
前記チップ領域の前記下部絶縁膜内に配置され、前記半導体集積回路と前記チップパッドを連結する金属配線及び金属ビアと、をさらに含む請求項16に記載の半導体装置。
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