JP2020025035A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000011261 inert gas Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 239000007789 gas Substances 0.000 claims description 71
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 24
- 238000002474 experimental method Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000013626 chemical specie Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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Abstract
Description
<第1のサンプル基板に対する工程ST2の条件>
チャンバ10内の圧力:50mT(6.666Pa)
H2ガスの流量:100sccm
Arガスの流量:760sccm
第1の高周波電力:60MHz、300W
第2の高周波電力:40MHz、0W
<第2のサンプル基板に対する工程ST2の条件>
チャンバ10内の圧力:50mT(6.666Pa)
H2ガスの流量:100sccm
Arガスの流量:760sccm
第1の高周波電力:60MHz、0W
第2の高周波電力:40MHz、300W
Claims (10)
- 基板に対して実行されるプラズマ処理方法であって、前記基板は、シリコン含有膜及び該シリコン含有膜上に設けられたマスクを有し、該マスクには長手方向を有する開口が形成されており、
該プラズマ処理方法は、容量結合型のプラズマ処理装置のチャンバ内に設けられた基板支持台上に前記基板が載置された状態で実行され、
前記チャンバ内に不活性ガスを供給する工程と、
シリコン含有材料を前記基板上に堆積させる工程であり、前記不活性ガスからプラズマを生成するために、第1の高周波電力を第1の高周波電源から前記プラズマ処理装置の上部電極に供給すること、及び、前記第1の高周波電力の周波数よりも低い周波数を有する第2の高周波電力を第2の高周波電源から前記基板支持台の下部電極に供給することのうち一方を選択的に実行し、且つ、前記プラズマから正イオンを前記上部電極に衝突させて前記上部電極から前記シリコン含有材料を放出させるために、バイアス電源から前記上部電極に負極性のバイアス電圧を与える、該工程と、
を含むプラズマ処理方法。 - 基板に対して実行されるプラズマ処理方法であって、前記基板は、シリコン含有膜及び該シリコン含有膜上に設けられたマスクを有し、該マスクには長手方向を有する開口が形成されており、
該プラズマ処理方法は、容量結合型のプラズマ処理装置のチャンバ内に設けられた基板支持台上に前記基板が載置された状態で実行され、
前記チャンバ内に不活性ガスを供給する工程と、
シリコン含有材料を前記基板上に堆積させる工程であり、前記不活性ガスからプラズマを生成するために、前記プラズマ処理装置の上部電極に電気的に接続された第1の高周波電源によって発生される第1の高周波電力の周波数よりも低い周波数を有する第2の高周波電力を第2の高周波電源から前記基板支持台の下部電極に供給し、且つ、前記プラズマから正イオンを前記上部電極に衝突させて前記上部電極から前記シリコン含有材料を放出させるために、バイアス電源から前記上部電極に負極性のバイアス電圧を与える、該工程と、
を含むプラズマ処理方法。 - 前記負極性のバイアス電圧は、直流電圧である、請求項1又は2に記載のプラズマ処理方法。
- 前記上部電極を構成する前記シリコン含有材料は、シリコンから構成されている、請求項1〜3の何れか一項に記載のプラズマ処理方法。
- 前記マスクは、レジストマスクであり、
前記シリコン含有膜は、シリコンを含有する反射防止膜であり、
前記基板は、その上に前記反射防止膜が設けられた有機膜を更に有する、
請求項1〜4の何れか一項に記載のプラズマ処理方法。 - 堆積させる前記工程の後に、前記マスクの下地膜に対するプラズマエッチングを実行する工程を更に含む、請求項1〜5の何れか一項に記載のプラズマ処理方法。
- 少なくとも堆積させる前記工程の開始時点からプラズマエッチングを実行する前記工程の終了時点までの間、前記基板は、減圧された前記チャンバの内部空間の中に連続的に収容される、請求項1〜6の何れか一項に記載のプラズマ処理方法。
- 容量結合型のプラズマ処理装置であって、
チャンバと、
前記チャンバ内に不活性ガスを供給するように構成されたガス供給部と、
下部電極を有し、前記チャンバ内に設けられた基板支持台と、
前記基板支持台の上方に設けられた上部電極と、
第1の高周波電力を発生するように構成されており、前記上部電極に電気的に接続された第1の高周波電源と、
第1の高周波電力の周波数よりも低い周波数を有する第2の高周波電力を発生するように構成されており、前記下部電極に電気的に接続された第2の高周波電源と、
前記上部電極に負極性のバイアス電圧を与えるように構成されたバイアス電源と、
前記ガス供給部、前記第1の高周波電源、前記第2の高周波電源、及び前記バイアス電源を制御するように構成された制御部と、
を備え、
前記制御部は、
前記チャンバ内に不活性ガスを供給するよう前記ガス供給部を制御し、
前記不活性ガスからプラズマを生成するために、前記第1の高周波電力を前記第1の高周波電源から前記上部電極に供給すること、及び、前記第2の高周波電力を前記第2の高周波電源から前記下部電極に供給することのうち一方を選択的に実行し、
前記プラズマから正イオンを前記上部電極に衝突させて前記上部電極からシリコン含有材料を放出させるために、前記上部電極に負極性のバイアス電圧を与えるよう前記バイアス電源を制御する、
プラズマ処理装置。 - 前記バイアス電源は、直流電源である、請求項8に記載のプラズマ処理装置。
- 前記上部電極を構成する前記シリコン含有材料は、シリコンから構成されている、請求項8又は9に記載のプラズマ処理装置。
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JP2018149256A JP7203531B2 (ja) | 2018-08-08 | 2018-08-08 | プラズマ処理方法及びプラズマ処理装置 |
US16/975,462 US11367590B2 (en) | 2018-08-08 | 2019-07-25 | Plasma processing method and plasma processing apparatus |
CN201980017866.4A CN111819667A (zh) | 2018-08-08 | 2019-07-25 | 等离子体处理方法和等离子体处理装置 |
PCT/JP2019/029298 WO2020031731A1 (ja) | 2018-08-08 | 2019-07-25 | プラズマ処理方法及びプラズマ処理装置 |
KR1020207025388A KR20210035073A (ko) | 2018-08-08 | 2019-07-25 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
TW108127149A TW202008464A (zh) | 2018-08-08 | 2019-07-31 | 電漿處理方法及電漿處理裝置 |
US17/835,521 US11721522B2 (en) | 2018-08-08 | 2022-06-08 | Plasma processing method and plasma processing apparatus |
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JP2013191857A (ja) * | 2004-06-21 | 2013-09-26 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体 |
JP2017183688A (ja) * | 2016-03-29 | 2017-10-05 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
JP2017212357A (ja) * | 2016-05-26 | 2017-11-30 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
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