JP2017212357A - プラズマ処理方法 - Google Patents
プラズマ処理方法 Download PDFInfo
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- JP2017212357A JP2017212357A JP2016105084A JP2016105084A JP2017212357A JP 2017212357 A JP2017212357 A JP 2017212357A JP 2016105084 A JP2016105084 A JP 2016105084A JP 2016105084 A JP2016105084 A JP 2016105084A JP 2017212357 A JP2017212357 A JP 2017212357A
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- gas
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- 238000003672 processing method Methods 0.000 title claims description 9
- 239000007789 gas Substances 0.000 claims abstract description 136
- 238000000034 method Methods 0.000 claims abstract description 98
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- -1 oxygen ions Chemical class 0.000 claims abstract description 16
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 32
- 239000003507 refrigerant Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 235000011194 food seasoning agent Nutrition 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
<工程ST3>
・処理容器12内の圧力の値[mTorr]:50[mTorr]
・第1の高周波電源62の高周波電力の値[W]:500[W]
・第2の高周波電源64の高周波電力の値[W]:300[W]
・電源70の直流電圧の値[V]:0[V]
・処理ガス:CF4ガス
・処理ガスの流量[sccm]:600[sccm]
・処理時間[s]:30[s]
<工程ST5>
・処理容器12内の圧力の値[mTorr]:20[mTorr]
・第1の高周波電源62の高周波電力の値[W]:200[W]
・第2の高周波電源64の高周波電力の値[W]:0[W]
・電源70の直流電圧の値[V]:−900[V]
・処理ガス:O2/Arガス
・処理ガスの流量[sccm]:(O2ガス)5[sccm]、(Arガス)800[sccm]
・処理時間[s]:15[s]
Claims (4)
- プラズマ処理装置を用いて被処理体を処理するプラズマ処理方法であって、該プラズマ処理装置は、処理容器を備え、該被処理体は、シリコンを含有する被エッチング層と、該被エッチング層の上に設けられる有機膜と、該有機膜の上に設けられる反射防止膜と、該反射防止膜の上に設けられる第1マスクとを備え、該方法は、
前記処理容器内で発生させたプラズマと前記第1マスクとを用いて前記反射防止膜をエッチングする工程であって、該反射防止膜から第2マスクが形成される該工程と、
前記処理容器内で発生させたプラズマと前記第2マスクとを用いて前記有機膜をエッチングする工程であって、該有機膜から第3マスクが形成される該工程と、
前記処理容器内で第1のガスおよび第2のガスを含む混合ガスのプラズマを生成する工程と、
前記処理容器内で発生させたプラズマと前記第3マスクとを用いて前記被エッチング層をエッチングする工程と、
を備え、
前記プラズマ処理装置は、上部電極を更に備え、
前記上部電極は、前記処理容器内において前記被処理体を支持する載置台の上方に設けられ、
前記上部電極の電極板は、シリコンを含有し、
前記第1のガスは、酸素ガスであり、
前記混合ガスのプラズマを生成する前記工程では、前記第1のガスのプラズマに含まれる酸素イオンを前記電極板に衝突させて該電極板の表面に酸化シリコン膜を形成する、
方法。 - 前記混合ガスのプラズマを生成する前記工程において、前記第1のガスの流量は、3〜10sccmの範囲である、
請求項1に記載の方法。 - 前記第2のガスは、アルゴンガスである、
請求項1または請求項2に記載の方法。 - 前記反射防止膜は、酸化シリコンを含有し、
前記混合ガスのプラズマを生成する前記工程において形成される前記酸化シリコン膜の膜厚は、前記被エッチング層をエッチングする工程の後に前記反射防止膜をエッチングする前記工程が更に実施される場合に、該反射防止膜をエッチングする該工程において該酸化シリコン膜が除去される膜厚である、
請求項1〜3の何れか一項に記載の方法。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011192718A (ja) * | 2010-03-12 | 2011-09-29 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
JP2012204668A (ja) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | プラズマエッチング方法および記憶媒体 |
JP2013042149A (ja) * | 2004-10-29 | 2013-02-28 | Lam Research Corporation | シリコンまたはシリコンカーバイド電極表面をプラズマエッチング処理中の形態改質から保護する方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4288696B2 (ja) | 2003-03-10 | 2009-07-01 | セイコーエプソン株式会社 | 表面処理装置および表面処理方法 |
TWI670768B (zh) * | 2014-10-30 | 2019-09-01 | 日商日本瑞翁股份有限公司 | 電漿蝕刻方法 |
US20160351799A1 (en) * | 2015-05-30 | 2016-12-01 | Applied Materials, Inc. | Hard mask for patterning magnetic tunnel junctions |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013042149A (ja) * | 2004-10-29 | 2013-02-28 | Lam Research Corporation | シリコンまたはシリコンカーバイド電極表面をプラズマエッチング処理中の形態改質から保護する方法 |
JP2011192718A (ja) * | 2010-03-12 | 2011-09-29 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体 |
JP2012204668A (ja) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | プラズマエッチング方法および記憶媒体 |
Cited By (8)
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JP2020025035A (ja) * | 2018-08-08 | 2020-02-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US11367590B2 (en) | 2018-08-08 | 2022-06-21 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
JP7203531B2 (ja) | 2018-08-08 | 2023-01-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US11721522B2 (en) | 2018-08-08 | 2023-08-08 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
WO2020125468A1 (zh) * | 2018-12-18 | 2020-06-25 | 北京北方华创微电子装备有限公司 | 腔室进气结构以及反应腔室 |
JP2020141032A (ja) * | 2019-02-27 | 2020-09-03 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP7190938B2 (ja) | 2019-02-27 | 2022-12-16 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
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