JP2020024838A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2020024838A JP2020024838A JP2018148281A JP2018148281A JP2020024838A JP 2020024838 A JP2020024838 A JP 2020024838A JP 2018148281 A JP2018148281 A JP 2018148281A JP 2018148281 A JP2018148281 A JP 2018148281A JP 2020024838 A JP2020024838 A JP 2020024838A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 230000002093 peripheral effect Effects 0.000 claims abstract description 61
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 27
- 238000003780 insertion Methods 0.000 claims description 20
- 230000037431 insertion Effects 0.000 claims description 20
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/28—Clamped connections, spring connections
- H01R4/30—Clamped connections, spring connections utilising a screw or nut clamping member
- H01R4/305—Clamped connections, spring connections utilising a screw or nut clamping member having means for facilitating engagement of conductive member or for holding it in position
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
Description
上記実施の形態に記載の半導体装置は、外部導体にネジを介して接続される主端子と、前記ネジの先端がねじ込まれるナットと、前記ナットを保持するナット保持部材と、を備え、前記ナット保持部材は、前記ナットを収容する凹部を有し、前記凹部を形成する周壁部の一部に切欠き部が形成されることを特徴とする。
2 :ケース部材
3 :主端子
4 :制御端子
5 :ナット保持部材
6 :ナット
6a :外周面(対向面)
21 :貫通穴
23 :主端子支持部
24 :制御端子支持部
25 :挿入溝
30 :主面部
31 :脚部
32 :貫通孔
50 :ナット収容部
51 :膨出部
52 :凹部
52a :内周面
53 :周壁部
53a :薄肉部
54 :切欠き部
55 :隙間
Claims (6)
- 外部導体にネジを介して接続される主端子と、
前記ネジの先端がねじ込まれるナットと、
前記ナットを保持するナット保持部材と、を備え、
前記ナット保持部材は、前記ナットを収容する凹部を有し、
前記凹部を形成する周壁部の一部に切欠き部が形成されることを特徴とする半導体装置。 - 前記主端子は、基板に形成される電子回路に接続され、
前記基板を収容し、前記主端子の一部を外部に露出させるケース部材を更に備え、
前記ケース部材は、前記ナット保持部材を挿入可能な挿入溝を有し、
前記ナット保持部材は、前記主端子の一部と前記凹部に収容された前記ナットとが対向する位置まで挿入されることを特徴とする請求項1に記載の半導体装置。 - 前記主端子は、
前記基板に対向し、前記ケース部材から外部に露出される主面部と、
前記主面部の両端から前記基板に向かって延びる一対の脚部と、を有し、
前記主面部には、前記ネジを挿通する貫通孔が形成され、
前記挿入溝は、前記一対の脚部の間に形成され、
前記ナット保持部材は、前記凹部に収容された前記ナットの中心が前記貫通孔の中心と一致するまで挿入され、
前記切欠き部は、前記一対の脚部に対向する前記周壁部に形成されることを特徴とする請求項2に記載の半導体装置。 - 前記主端子は、前記ナット保持部材の挿入方向に並んで複数設けられ、
前記凹部は、複数の前記主端子に対応して複数設けられ、
前記切欠き部は、各前記凹部に対応してそれぞれ形成されることを特徴とする請求項3に記載の半導体装置。 - 前記ナットは、六角ナットで構成され、
前記凹部は、前記ナットの形状に対応した平面視六角形状を有し、前記ナットの六角形状を規定する一対の対向面の対向する方向が、前記一対の脚部の対向する方向と一致していることを特徴とする請求項3又は請求項4に記載の半導体装置。 - 前記凹部は、前記切欠き部を基準に所定の角度間隔に位置するナットの外周面と対向する内周面との間に隙間を有することを特徴とする請求項5に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018148281A JP7275493B2 (ja) | 2018-08-07 | 2018-08-07 | 半導体装置 |
CN201910584672.4A CN110828383A (zh) | 2018-08-07 | 2019-07-01 | 半导体装置 |
US16/459,514 US10897093B2 (en) | 2018-08-07 | 2019-07-01 | Semiconductor apparatus |
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JP2018148281A JP7275493B2 (ja) | 2018-08-07 | 2018-08-07 | 半導体装置 |
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JP2020024838A true JP2020024838A (ja) | 2020-02-13 |
JP7275493B2 JP7275493B2 (ja) | 2023-05-18 |
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JP2018148281A Active JP7275493B2 (ja) | 2018-08-07 | 2018-08-07 | 半導体装置 |
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US (1) | US10897093B2 (ja) |
JP (1) | JP7275493B2 (ja) |
CN (1) | CN110828383A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11410941B2 (en) | 2020-05-29 | 2022-08-09 | Fuji Electric Co., Ltd. | Semiconductor module |
JP7381387B2 (ja) | 2020-04-03 | 2023-11-15 | 矢崎総業株式会社 | 端子台 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7052426B2 (ja) * | 2018-03-02 | 2022-04-12 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7238565B2 (ja) * | 2019-04-12 | 2023-03-14 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0525680U (ja) * | 1991-09-11 | 1993-04-02 | ケル株式会社 | プリント基板用コネクタのナツト止め金具 |
JP2004134569A (ja) * | 2002-10-10 | 2004-04-30 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2013008619A (ja) * | 2011-06-27 | 2013-01-10 | Fuji Electric Co Ltd | 電子機器の端子装置 |
WO2018135176A1 (ja) * | 2017-01-17 | 2018-07-26 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004232745A (ja) * | 2003-01-30 | 2004-08-19 | Toshiba Tec Corp | ナット取り付け構造 |
JP4118789B2 (ja) | 2003-11-25 | 2008-07-16 | 三菱電機株式会社 | 半導体装置用の外装樹脂ケース |
JP2012134300A (ja) | 2010-12-21 | 2012-07-12 | Mitsubishi Electric Corp | 半導体装置 |
JP5752548B2 (ja) * | 2011-09-30 | 2015-07-22 | 新電元工業株式会社 | 半導体装置 |
WO2013145619A1 (ja) * | 2012-03-28 | 2013-10-03 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5899449B2 (ja) * | 2012-12-13 | 2016-04-06 | パナソニックIpマネジメント株式会社 | 照明用光源及び照明装置 |
WO2014091655A1 (ja) * | 2012-12-13 | 2014-06-19 | パナソニック株式会社 | 発光装置、照明用光源及び照明装置 |
JP6044321B2 (ja) * | 2012-12-19 | 2016-12-14 | 富士電機株式会社 | 半導体モジュール |
JP2015056614A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 半導体装置部品および半導体装置 |
CN106796934B (zh) | 2015-04-10 | 2019-12-10 | 富士电机株式会社 | 半导体装置 |
JP6578795B2 (ja) | 2015-08-04 | 2019-09-25 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2017122473A1 (ja) | 2016-01-12 | 2017-07-20 | 富士電機株式会社 | 半導体装置 |
-
2018
- 2018-08-07 JP JP2018148281A patent/JP7275493B2/ja active Active
-
2019
- 2019-07-01 US US16/459,514 patent/US10897093B2/en active Active
- 2019-07-01 CN CN201910584672.4A patent/CN110828383A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0525680U (ja) * | 1991-09-11 | 1993-04-02 | ケル株式会社 | プリント基板用コネクタのナツト止め金具 |
JP2004134569A (ja) * | 2002-10-10 | 2004-04-30 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2013008619A (ja) * | 2011-06-27 | 2013-01-10 | Fuji Electric Co Ltd | 電子機器の端子装置 |
WO2018135176A1 (ja) * | 2017-01-17 | 2018-07-26 | 富士電機株式会社 | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7381387B2 (ja) | 2020-04-03 | 2023-11-15 | 矢崎総業株式会社 | 端子台 |
US11410941B2 (en) | 2020-05-29 | 2022-08-09 | Fuji Electric Co., Ltd. | Semiconductor module |
JP7456292B2 (ja) | 2020-05-29 | 2024-03-27 | 富士電機株式会社 | 半導体モジュール |
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US20200052420A1 (en) | 2020-02-13 |
JP7275493B2 (ja) | 2023-05-18 |
US10897093B2 (en) | 2021-01-19 |
CN110828383A (zh) | 2020-02-21 |
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