JP2020021819A - 積層セラミック電子部品 - Google Patents
積層セラミック電子部品 Download PDFInfo
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- JP2020021819A JP2020021819A JP2018144525A JP2018144525A JP2020021819A JP 2020021819 A JP2020021819 A JP 2020021819A JP 2018144525 A JP2018144525 A JP 2018144525A JP 2018144525 A JP2018144525 A JP 2018144525A JP 2020021819 A JP2020021819 A JP 2020021819A
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- internal electrode
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Abstract
Description
内部電極層と誘電体層とが交互に積層された積層体を有し、
前記誘電体層が、一般式ABO3 (AはBa、SrおよびCaから選択される少なくとも1種、BはTi、ZrおよびHfから選択される少なくとも1種)で表される主成分と、希土類成分R(RはSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも1種)とを含む誘電体磁器組成物からなり、
前記誘電体層には、前記希土類成分Rを含む偏析相が存在し、
積層方向の断面観察において、偏析相の面積割合が104ppm〜961ppmであり、前記偏析相の総面積のうち、96%以上が内部電極層と接していることを特徴とする。
<積層セラミックコンデンサ1>
図1に示すように、本発明の一実施形態に係る積層セラミックコンデンサ1は、誘電体層2と、内部電極層3とが交互に積層された構成のコンデンサ素子本体10を有する。この素子本体10の両端部には、素子本体10の内部で交互に配置された内部電極層3と各々導通する一対の外部電極4が形成してある。素子本体10の形状に特に制限はないが、通常、直方体状とされる。また、その寸法にも特に制限はなく、用途に応じて適当な寸法とすればよい。
誘電体層2は、誘電体磁器組成物から構成されている。該誘電体磁器組成物は、主成分として、一般式ABO3 (Aは、Ba、CaおよびSrからなる群から選ばれる少なくとも1つであり、Bは、Ti、ZrおよびHfからなる群から選ばれる少なくとも1つである)で表され、ペロブスカイト型結晶構造を有する化合物から成る主成分を含有する。さらに、副成分として、希土類成分R(RはSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも1種)の酸化物と、必要に応じて、Siを含む酸化物と、を含有する。なお、酸素(O)量は、上記式の化学量論組成から若干偏倚してもよい。
図2は、図1に示す積層セラミックコンデンサ1の断面の拡大概略図である。本実施形態では、中央部分における断面について偏析相の有無等を観察したが、観察部分は積層セラミックコンデンサの中央部分に限定されない。
内部電極層3に含有される導電材は特に限定されないが、本実施形態では、NiまたはNi合金が好ましい。Ni合金としては、Mn,Cr,CoおよびAlから選択される1種以上の元素とNiとの合金が好ましく、合金中のNi含有量は95重量%以上であることが好ましい。なお、NiまたはNi合金中には、P等の各種微量成分が0.1重量%程度以下含まれていてもよい。内部電極層3の厚さは用途等に応じて適宜決定すればよい。
外部電極4に含有される導電材は特に限定されないが、本発明では安価なNi,Cuや、これらの合金を用いることができる。外部電極4の厚さは用途等に応じて適宜決定すればよい。
本実施形態の積層セラミックコンデンサ1は、従来の積層セラミックコンデンサと同様に、ペーストを用いた通常の印刷法やシート法によりグリーンチップを作製し、これを焼成した後、外部電極を印刷または転写して焼成することにより製造される。以下、製造方法について具体的に説明する。
下記の例において得られたコンデンサ試料について、偏析相の面積割合、内部電極層に接している偏析相の割合、内部電極層に埋め込まれている偏析相の割合、内部電極層の平均厚さに対する偏析相の積層方向の最大長さの割合、誘電体粒子の平均粒子径、高温負荷寿命および比誘電率εの測定を、それぞれ下記に示す方法により行った。
コンデンサ試料を、誘電体層に垂直な断面で切断した。断面のうち、希土類元素の偏析の有無を判定する箇所について、STEM−EDSマッピング分析を行った。20層以上の内部電極層が観察される視野においてマッピング分析結果を、0.027μm/pixelのドットに分割し、個々のpixelでのコントラストデータを数値化した。具体的には、コントラスト強度が最も小さいもの(検出なし)を0とし、最も強度が強いものを90として、コントラストデータを90段階に分類した。希土類元素のコントラスト強度が75未満のドットの領域は偏析していない状態とし、75以上のドットの領域は希土類元素が偏析している偏析相とした。
上記と同様にしてコンデンサ試料の断面においてTEM−EDSマッピング分析を行った。Niのマッピング分析結果から、内部電極層の輪郭線を作成した。また、希土類元素が偏析している偏析相の輪郭線を作成した。
上記と同様にしてコンデンサ試料の断面において内部電極層の輪郭線および偏析相の輪郭線を作成した。
偏析相と同定される粒子の輪郭線の全長のうち、50%以上が内部電極層の輪郭線と共有されている粒子を、内部電極層の埋め込まれている偏析相と判定した。観察視野における全偏析粒子の数を算出し、内部電極層の埋め込まれている偏析相と同定される粒子数の比を求め、内部電極層に埋め込まれている偏析相の割合とした。なお、画像は1試料につき8枚撮影し、その平均を求めた。
コンデンサ試料を中心まで研磨し、その研磨面を焼成温度よりも100℃低い温度でサーマルエッチング処理した。処理後の研磨面を、電界放出型電子顕微鏡(FE−SEM)により観察し、2次電子像によるSEM写真を撮影した。このSEM写真をソフトウェアにより画像処理を行い、誘電体粒子の境界を判別し、各誘電体粒子の面積を算出した。そして、算出された誘電体粒子の面積を円相当径に換算して1.27倍した値を誘電体粒子径とした。この測定を2000個の誘電体粒子について行い、そのメジアン径を平均誘電体粒子径とした。
比誘電率εは、コンデンサ試料に対し、基準温度25℃において、デジタルLCRメータ(YHP社製4274A)にて、周波数1kHz,入力信号レベル(測定電圧)1.0Vrmsの条件下で測定された静電容量から算出した(単位なし)。比誘電率は高い方が好ましく、本実施例では、比誘電率εが2000〜3000を良好とし、2200〜2800を優良とした。
コンデンサ試料に対し、175℃にて、25V/μmの電界下で直流電圧の印加状態に保持し、寿命時間を測定することにより、高温負荷寿命を評価した。本実施例においては、印加開始から絶縁抵抗が一桁落ちるまでの時間を寿命と定義した。また、本実施例では、上記の評価を20個のコンデンサ試料について行い、その平均値を高温負荷寿命とした。評価基準は50時間以上を良好とし、100時間以上を優良とした。
<主成分原料>
BaTiO3粉末(Ba/Ti=1.004、平均粒子径0.17μm)
BaTiO3粉末(Ba/Ti=1.004、平均粒子径0.12μm)
BaTiO3粉末(Ba/Ti=1.004、平均粒子径0.28μm)
<副成分原料>
Dy2O3(平均粒子径0.05μm、0.10μm、0.15μmの3種)
Gd2O3(平均粒子径0.05μm)
Tb2O3(平均粒子径0.05μm)
Y2O3(平均粒子径0.05μm)
Ho2O3(平均粒子径0.05μm)
Yb2O3(平均粒子径0.05μm)
チタン酸バリウムの原料紛体として平均粒子径が0.17μmのBaTiO3粉末を準備した。副成分原料として、平均粒子径が0.05μmのDy2O3を準備した。
試料番号4および試料番号5では、Dy2O3粉末として平均粒子径が0.10μmの粉末を使用し、試料番号6では、Dy2O3粉末として平均粒子径が0.15μmの粉末を使用した以外は、試料番号1と同様にして誘電体層用ペーストを調製した。
試料番号7では、平均粒子径が0.12μmのBaTiO3粉末を用い、
試料番号8では、平均粒子径が0.28μmのBaTiO3粉末を使用した以外は、試料番号1と同様にして誘電体層用ペーストを調製した。
試料番号9では、Dy2O3粉末に代えてGd2O3粉末を用い、試料番号10ではTb2O3粉末を用い、試料番号11ではY2O3粉末を用い、試料番号12ではHo2O3粉末を用いた以外は、試料番号1と同様にして誘電体層用ペーストを調製した。
希土類化合物として、BaTiO3100モルに対し、試料番号13では1.0モルのDy2O3粉末(平均粒子径0.05μm)と0.3モルのHo2O3粉末とを用い、試料番号14では1.0モルのDy2O3粉末(平均粒子径0.05μm)と0.3モルのHo2O3粉末と0.2モルのYb2O3粉末を用い、試料番号15では1.0モルのDy2O3粉末(平均粒子径0.05μm)と0.3モルのTb2O3粉末と0.2モルのYb2O3粉末を用いた以外は、試料番号1と同様にして誘電体層用ペーストを調製した。
BaTiO3100モルに対する、Dy2O3粉末の使用量を0.8モルに変更した以外は、試料番号1と同様にして誘電体層用ペーストを調製した。得られた誘電体層ペーストを用いた以外は、試料番号1と同様にして、グリーンチップを得た。焼成条件を、表1に示す昇温速度、保持温度とし、試料番号1と同様にして、積層セラミックコンデンサの試料を得た。
2…誘電体層
3…内部電極層
3a…不連続部
4…外部電極
5…偏析相
10…コンデンサ素子本体
Claims (3)
- 内部電極層と誘電体層とが交互に積層された積層体を有する積層セラミック電子部品であって、
前記誘電体層が、一般式ABO3 (AはBa、SrおよびCaから選択される少なくとも1種、BはTi、ZrおよびHfから選択される少なくとも1種)で表される主成分と、希土類成分R(RはSc、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも1種)とを含む誘電体磁器組成物からなり、
前記誘電体層には、前記希土類成分Rを含む偏析相が存在し、
積層方向の断面観察において、偏析相の面積割合が104ppm〜961ppmであり、
前記偏析相の総面積のうち、96%以上が内部電極層と接している、積層セラミック電子部品。 - 前記偏析相の積層方向の最大長さが、前記内部電極層の平均厚さに対して100%以下である請求項1に記載の積層セラミック電子部品。
- 前記偏析相の全粒子の50%以上が内部電極層に埋め込まれている請求項1または2に記載の積層セラミック電子部品。
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