JP2020015642A - 結晶成長装置 - Google Patents
結晶成長装置 Download PDFInfo
- Publication number
- JP2020015642A JP2020015642A JP2018139437A JP2018139437A JP2020015642A JP 2020015642 A JP2020015642 A JP 2020015642A JP 2018139437 A JP2018139437 A JP 2018139437A JP 2018139437 A JP2018139437 A JP 2018139437A JP 2020015642 A JP2020015642 A JP 2020015642A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal growth
- opening
- growth apparatus
- insulating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 79
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000011810 insulating material Substances 0.000 claims description 27
- 238000009413 insulation Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 abstract description 2
- 239000012774 insulation material Substances 0.000 abstract 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 24
- 229910010271 silicon carbide Inorganic materials 0.000 description 21
- 239000002994 raw material Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000004088 simulation Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
特許文献1には、所定の位置に断熱材を設けることで、SiC単結晶の形状を制御する方法が記載されている。また特許文献2には、断熱材を原料気体から分離された閉鎖空間中に配置することで、炉内の温度分布を制御できることが記載されている。
図1は、第1実施形態にかかる結晶成長装置の断面模式図である。図1に示す結晶成長装置100は、坩堝10と、断熱材20と、加熱部30と、を備える。坩堝10は、支持体14により支持される。図1では、理解を容易にするために、原料G、種結晶S、種結晶S上に結晶成長した単結晶Cを同時に図示している。
断熱材20は、2000℃以上の高温で熱伝導率が40W/mk以下である材料により構成されていることが好ましい。2000℃以上の高温で熱伝導率が40W/mk以下の材料としては、常温時の熱伝導率が120W/mk以下の黒鉛部材等が挙げられる。また、断熱材20は2000℃以上の高温において5W/mk以下である材料で構成されることがより好ましい。2000℃以上の高温で熱伝導率が5W/mk以下の材料としては黒鉛、炭素を主成分としたフェルト材があげられる。
図4は、実施例1のシミュレーションに用いた結晶成長装置の装置構成を示す。結晶成長装置は坩堝10及び支持体14の中心軸を中心に対称な構造である。可動部22は、上下方向に動作可能であり、可動部22が上下方向に動作することで開口部23が形成される。
実施例2は、可動部22と対向部21とを密着させた状態(実施例1)から可動部22を下方に10mm移動させた点が実施例1と異なる。その他の条件は、実施例1と同様とした。実施例2において坩堝10の側壁10aの最高温度は2415.3℃であり、最高温度は坩堝10内側の上面から112.7mmの位置であった。
実施例3は、可動部22と対向部21とを密着させた状態(実施例1)から可動部22を下方に30mm移動させた点が実施例1と異なる。その他の条件は、実施例1と同様とした。実施例3において坩堝10の側壁10aの最高温度は2413.7℃であり、最高温度は坩堝10内側の上面から70.7mmの位置であった。
実施例4は、可動部22と対向部21とを密着させた状態(実施例1)から可動部22を下方に50mm移動させた点が実施例1と異なる。その他の条件は、実施例1と同様とした。実施例4において坩堝10の側壁10aの最高温度は2413.5℃であり、最高温度は坩堝10内側の上面から60.8mmの位置であった。
10a 側壁
12 結晶設置部
14 支持体
20 断熱材
21、25 対向部
21a、25a 第2傾斜面
22、24 可動部
22a、24a 傾斜面
23 開口部
30 加熱部
100、101、102 結晶成長装置
C 単結晶
G 原料
S 種結晶
D22、D24、D26 動作方向
Claims (4)
- 坩堝と、
前記坩堝の周囲を覆う断熱材と、
前記断熱材の外側に位置し、前記坩堝を誘導加熱できる加熱部と、を備え、
前記断熱材は可動部を備え、
前記可動部は、動作により前記断熱材に開口部を形成し、前記開口部の開口率を制御できる、結晶成長装置。 - 前記坩堝が支持される支持面の鉛直方向から平面視した際に、前記可動部は前記坩堝を中心として対称に動作する、請求項1に記載の結晶成長装置。
- 前記可動部が前記坩堝の下方に位置する、請求項1または2に記載の結晶成長装置。
- 前記可動部は、動作方向に対して傾斜する傾斜面を備え、
前記開口率は、前記傾斜面と前記断熱材の前記可動部と対向する第2傾斜面との距離により制御される、請求項1から3のいずれか一項に記載の結晶成長装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018139437A JP7186534B2 (ja) | 2018-07-25 | 2018-07-25 | 結晶成長装置 |
CN201910665852.5A CN110777427B (zh) | 2018-07-25 | 2019-07-23 | 晶体生长装置 |
US16/519,242 US11105016B2 (en) | 2018-07-25 | 2019-07-23 | Crystal growth apparatus with controlled center position of heating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018139437A JP7186534B2 (ja) | 2018-07-25 | 2018-07-25 | 結晶成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020015642A true JP2020015642A (ja) | 2020-01-30 |
JP7186534B2 JP7186534B2 (ja) | 2022-12-09 |
Family
ID=69179104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018139437A Active JP7186534B2 (ja) | 2018-07-25 | 2018-07-25 | 結晶成長装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11105016B2 (ja) |
JP (1) | JP7186534B2 (ja) |
CN (1) | CN110777427B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020106291B4 (de) * | 2020-03-09 | 2024-02-08 | Ebner Industrieofenbau Gmbh | Heizvorrichtung und Verfahren zur Kristallzüchtung mit beweglicher Impfkristallhalterung |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1121120A (ja) * | 1997-07-02 | 1999-01-26 | Sharp Corp | 多結晶半導体の製造方法および製造装置 |
JP2001048696A (ja) * | 1999-08-06 | 2001-02-20 | Mitsubishi Materials Corp | 結晶シリコン製造装置 |
JP2006219336A (ja) * | 2005-02-10 | 2006-08-24 | Toshiba Ceramics Co Ltd | 多結晶半導体製造用ルツボ及び多結晶半導体製造方法 |
JP2007332022A (ja) * | 2006-06-13 | 2007-12-27 | Young Sang Cho | 多結晶シリコンインゴット製造装置 |
JP2009091186A (ja) * | 2007-10-05 | 2009-04-30 | Sumitomo Electric Ind Ltd | 窒化アルミニウム結晶の成長方法および結晶成長装置 |
JP2013529175A (ja) * | 2010-12-14 | 2013-07-18 | 北京天科合達藍光半導体有限公司 | 物理気相輸送法での炭化ケイ素育成方法及び炭化ケイ素の元の位置での焼鈍方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1305909C (en) * | 1987-06-01 | 1992-08-04 | Michio Kida | Apparatus and process for growing crystals of semiconductor materials |
JPH0840798A (ja) * | 1994-07-29 | 1996-02-13 | Japan Energy Corp | 単結晶の製造方法 |
WO2005092791A1 (ja) * | 2004-03-29 | 2005-10-06 | Kyocera Corporation | シリコン鋳造装置および多結晶シリコンインゴットの製造方法 |
KR100861412B1 (ko) * | 2006-06-13 | 2008-10-07 | 조영상 | 다결정 실리콘 잉곳 제조장치 |
KR100955221B1 (ko) * | 2007-10-05 | 2010-04-29 | 주식회사 글로실 | 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치 |
TW200928018A (en) * | 2007-12-21 | 2009-07-01 | Green Energy Technology Inc | Crystal-growing furnace with convectional cooling structure |
FR2940327B1 (fr) * | 2008-12-19 | 2011-02-11 | Commissariat Energie Atomique | Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales |
KR101345747B1 (ko) * | 2011-08-18 | 2013-12-30 | 한국화학연구원 | 반도체 또는 금속산화물 잉곳 제조장치 |
CN102644105B (zh) * | 2012-05-14 | 2016-04-27 | 吴晟 | 一种pvt法生长碳化硅晶体的方法及其装置 |
JP6111873B2 (ja) * | 2013-06-04 | 2017-04-12 | 新日鐵住金株式会社 | 炭化珪素単結晶インゴットの製造方法 |
JP5603990B2 (ja) | 2013-10-21 | 2014-10-08 | 昭和電工株式会社 | 炭化珪素単結晶の製造装置 |
GB201319671D0 (en) * | 2013-11-07 | 2013-12-25 | Ebner Ind Ofenbau | Controlling a temperature of a crucible inside an oven |
CN104195640A (zh) * | 2014-08-28 | 2014-12-10 | 杭州铸泰科技有限公司 | 一种用于蓝宝石单晶生长的热场系统 |
JP2016117624A (ja) | 2014-12-22 | 2016-06-30 | 住友電気工業株式会社 | 坩堝 |
JP6628640B2 (ja) * | 2016-03-01 | 2020-01-15 | 昭和電工株式会社 | 炭化珪素単結晶インゴットの製造装置及び製造方法 |
CN108070908A (zh) * | 2016-11-17 | 2018-05-25 | 上海新昇半导体科技有限公司 | 4H-SiC晶体生长设备及方法 |
CN207109138U (zh) * | 2017-06-23 | 2018-03-16 | 镇江仁德新能源科技有限公司 | 一种太阳能多晶硅的定向凝固炉 |
-
2018
- 2018-07-25 JP JP2018139437A patent/JP7186534B2/ja active Active
-
2019
- 2019-07-23 US US16/519,242 patent/US11105016B2/en active Active
- 2019-07-23 CN CN201910665852.5A patent/CN110777427B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1121120A (ja) * | 1997-07-02 | 1999-01-26 | Sharp Corp | 多結晶半導体の製造方法および製造装置 |
JP2001048696A (ja) * | 1999-08-06 | 2001-02-20 | Mitsubishi Materials Corp | 結晶シリコン製造装置 |
JP2006219336A (ja) * | 2005-02-10 | 2006-08-24 | Toshiba Ceramics Co Ltd | 多結晶半導体製造用ルツボ及び多結晶半導体製造方法 |
JP2007332022A (ja) * | 2006-06-13 | 2007-12-27 | Young Sang Cho | 多結晶シリコンインゴット製造装置 |
JP2009091186A (ja) * | 2007-10-05 | 2009-04-30 | Sumitomo Electric Ind Ltd | 窒化アルミニウム結晶の成長方法および結晶成長装置 |
JP2013529175A (ja) * | 2010-12-14 | 2013-07-18 | 北京天科合達藍光半導体有限公司 | 物理気相輸送法での炭化ケイ素育成方法及び炭化ケイ素の元の位置での焼鈍方法 |
Also Published As
Publication number | Publication date |
---|---|
CN110777427B (zh) | 2021-11-19 |
CN110777427A (zh) | 2020-02-11 |
US11105016B2 (en) | 2021-08-31 |
US20200032414A1 (en) | 2020-01-30 |
JP7186534B2 (ja) | 2022-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7018816B2 (ja) | 坩堝及びSiC単結晶成長装置 | |
JP6111873B2 (ja) | 炭化珪素単結晶インゴットの製造方法 | |
JP2020093965A (ja) | SiC単結晶の製造装置及びSiC単結晶製造用の構造体 | |
KR20120138445A (ko) | 잉곳 제조 장치 | |
JP2020015642A (ja) | 結晶成長装置 | |
JP2020093975A (ja) | 結晶成長装置及び坩堝 | |
JP7347173B2 (ja) | 結晶成長装置 | |
JP7400450B2 (ja) | SiC単結晶製造装置およびSiC単結晶の製造方法 | |
US11453959B2 (en) | Crystal growth apparatus including heater with multiple regions and crystal growth method therefor | |
JP7447431B2 (ja) | 単結晶成長方法 | |
JP2021104912A (ja) | 単結晶製造装置 | |
KR20130020488A (ko) | 잉곳 제조 장치 | |
KR20130053743A (ko) | 잉곳 제조 장치 및 이의 온도 제어 방법 | |
KR20130070479A (ko) | 단결정 성장 장치 | |
JP7068914B2 (ja) | 断熱性遮蔽部材及びそれを備えた単結晶製造装置 | |
KR101886271B1 (ko) | 잉곳 제조 장치 및 잉곳 제조 방법 | |
US11629433B2 (en) | SiC single crystal production apparatus | |
CN111286780A (zh) | 晶体生长装置及坩埚 | |
JP2021066638A (ja) | 結晶成長装置及び結晶成長方法 | |
KR20130074705A (ko) | 단결정 성장 장치 및 단결정 성장 방법 | |
KR20130014273A (ko) | 잉곳 제조 장치 | |
KR20130117178A (ko) | 잉곳 제조 장치 | |
KR20120138110A (ko) | 잉곳 제조 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210416 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220307 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220621 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221101 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221129 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7186534 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |