JP2020093965A - SiC単結晶の製造装置及びSiC単結晶製造用の構造体 - Google Patents
SiC単結晶の製造装置及びSiC単結晶製造用の構造体 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 239000000945 filler Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 16
- 239000010439 graphite Substances 0.000 claims abstract description 16
- 239000011810 insulating material Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 29
- 239000000843 powder Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 abstract description 13
- 238000009413 insulation Methods 0.000 abstract description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 82
- 229910010271 silicon carbide Inorganic materials 0.000 description 79
- 239000002994 raw material Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
Description
すなわち、本発明は、上記課題を解決するために、以下の手段を提供する。
図1は、第1実施形態にかかるSiC単結晶の製造装置の一例の断面図である。図1に示すSiC単結晶の製造装置101は、成長容器10と断熱材20と支持体30とを有する。成長容器10は、内部に成長空間Kを有する。成長空間K内には、原料Gと種結晶Sとが対向して配置される。図1では、理解を容易にするために、原料Gと種結晶Sとを同時に図示する。
keff=(1−εp)k+εp(kgas+8/3εσ4T3dp)…(1)
式(1)において、keffは実効的な熱伝導率であり、εpは容器21A内の空隙率であり、kgasは容器21A内のガスの熱伝導率であり、εは輻射率であり、σはステファン−ボルツマン定数であり、Tは温度であり、dpは粒径である。
図3は、第1実施形態にかかるSiC単結晶の製造装置の変形例の断面図である。変形例に係る製造装置101Aは、支持体30が成長容器10を直接支持していない点で、上記例に係る製造装置101と異なる。その他の構成は同一であり、同一の符号を付す。
図4は、第2実施形態にかかるSiC単結晶の製造装置の一例の断面図である。図2に示すSiC単結晶の製造装置102は、断熱材20を構成する各ユニットの配置が、図1に示すSiC単結晶の製造装置101と異なる。その他の構成は同一であり、同一の構成には同一の符号を付す。
図5は、第3実施形態にかかるSiC単結晶の製造装置の一例の断面図である。図3に示すSiC単結晶の製造装置103は、断熱材20を構成する各ユニットの配置が、図1に示すSiC単結晶の製造装置101と異なる。その他の構成は同一であり、同一の構成には同一の符号を付す。
図6は、第4実施形態にかかるSiC単結晶の製造装置の一例の断面図である。図6に示すSiC単結晶の製造装置103は、第1ユニット21と第2ユニット22の熱伝導率の関係が反対である点が、第3実施形態にかかるSiC単結晶の製造装置103と異なる。その他の構成は同一であり、同一の構成には同一の符号を付す。
図7は、第5実施形態にかかるSiC単結晶の製造装置の一例の断面図である。図7に示すSiC単結晶の製造装置105は、断熱材20と成長容器10との間にヒータ40及び配向材50を有する点が、第1実施形態にかかるSiC単結晶の製造装置101と異なる。その他の構成は同一であり、同一の構成には同一の符号を付す。
11 上壁
12 側壁
13 下壁
14 結晶設置部
20 断熱材
21 第1ユニット
21A 容器
21B 充填材
22 第2ユニット
23 第3ユニット
30 支持体
40 ヒータ
50 配向材
101、101A 製造装置
G 原料
K 成長空間
S 種結晶
T 等温面
Claims (10)
- 第1方向にSiCの単結晶が成長できる成長空間を内部に有する成長容器と、
前記成長容器を覆い、複数のユニットを含む断熱材と、を有し、
前記複数のユニットは、第1ユニットと、前記第1ユニットと少なくとも熱伝導率の異なる第2ユニットと、を有し、
前記第1ユニットは、
黒鉛と金属炭化物とのうち少なくとも一方からなる容器と、
前記容器内に交換可能に封入された充填材と、を有する、SiC単結晶の製造装置。 - 前記充填材は、SiC又は金属炭化物の粉体又は板材である、請求項1に記載のSiC単結晶の製造装置。
- 前記SiC又は金属炭化物の粉体又は板材は、形状異方性を有する、請求項2に記載のSiC単結晶の製造装置。
- 前記第1ユニットは、熱伝導率に異方性を有する、請求項1から3のいずれか一項に記載のSiC単結晶の製造装置。
- 前記第1ユニットは、前記第2ユニットより熱伝導率が低く、
前記第1ユニットは、前記第1方向において、前記成長容器の単結晶が設置される上壁と対向する下壁の外側を覆い、
前記第2ユニットは、前記第1方向と交差する径方向において、前記成長容器の側壁の外側を覆う、請求項1から4のいずれか一項に記載のSiC単結晶の製造装置。 - 前記第1ユニットは、前記第2ユニットより熱伝導率が高く、
前記第1ユニットは、前記第1方向において、前記成長容器の単結晶が設置される上壁の外側を覆い、
前記第2ユニットは、前記第1方向において、前記上壁と対向する前記成長容器の下壁の外側を覆う、請求項1から4のいずれか一項に記載のSiC単結晶の製造装置。 - 前記第1ユニットは、前記第2ユニットより熱伝導率が低く、
前記第1ユニットは、前記成長容器の単結晶が設置される上壁において、前記第1方向からの平面視で前記単結晶と重なる第1部分の外側を覆い、
前記第2ユニットは、前記成長容器の単結晶が設置される上壁の前記第1部分以外の第2部分の外側を覆う、請求項1から4のいずれか一項に記載のSiC単結晶の製造装置。 - 前記第1ユニットは、前記第2ユニットより熱伝導率が高く、
前記第1ユニットは、前記成長容器の単結晶が設置される上壁において、前記第1方向からの平面視で前記単結晶と重なる第1部分の外側を覆い、
前記第2ユニットは、前記成長容器の単結晶が設置される上壁の前記第1部分以外の第2部分の外側を覆う、請求項1から4のいずれか一項に記載のSiC単結晶の製造装置。 - SiCの単結晶が結晶成長する成長容器を覆う断熱材に用いられ、複数のユニットが組み合わさることで前記断熱材となるSiC単結晶の製造用構造体であって、
黒鉛又は金属炭化物からなる容器と、
前記容器内に交換可能に封入された充填材と、を有する、SiC単結晶製造用の構造体。 - SiCの単結晶が結晶成長する成長容器と、前記成長容器を輻射熱により加熱するヒータとの間に設けられるSiC単結晶の製造用構造体であって、
黒鉛又は金属炭化物からなる容器と、
前記容器内に交換可能に封入された充填材と、を有し、
第1方向の熱伝導性と、前記第1方向と交差する第2方向の熱伝導性と、が異なる、SiC単結晶製造用の構造体。
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CN201911262477.6A CN111321468B (zh) | 2018-12-14 | 2019-12-10 | SiC单晶的制造装置及SiC单晶制造用构造体 |
US16/711,826 US11427927B2 (en) | 2018-12-14 | 2019-12-12 | SiC single crystal manufacturing apparatus and structure having container and filler for manufacturing SiC single crystal |
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KR102236395B1 (ko) * | 2020-09-22 | 2021-04-02 | 에스케이씨 주식회사 | 탄화규소 잉곳 제조방법, 탄화규소 웨이퍼 및 탄화규소 웨이퍼 제조방법 |
WO2022158409A1 (ja) * | 2020-09-28 | 2022-07-28 | Secカーボン株式会社 | SiC単結晶成長装置 |
JP7474405B2 (ja) | 2020-05-29 | 2024-04-25 | キョーラク株式会社 | 発泡樹脂シートの成形方法 |
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