JP2019527382A - 合金吸収体を有する極紫外線マスクブランク、及びその製造方法 - Google Patents

合金吸収体を有する極紫外線マスクブランク、及びその製造方法 Download PDF

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JP2019527382A
JP2019527382A JP2019503652A JP2019503652A JP2019527382A JP 2019527382 A JP2019527382 A JP 2019527382A JP 2019503652 A JP2019503652 A JP 2019503652A JP 2019503652 A JP2019503652 A JP 2019503652A JP 2019527382 A JP2019527382 A JP 2019527382A
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Prior art keywords
layer
extreme ultraviolet
euv
mask blank
absorbent
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Japanese (ja)
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ビブー ジンダル，
ビブー ジンダル，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2019527382A publication Critical patent/JP2019527382A/ja
Priority to JP2022211287A priority Critical patent/JP2023052147A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Respiratory Apparatuses And Protective Means (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP2019503652A 2016-07-27 2017-07-19 合金吸収体を有する極紫外線マスクブランク、及びその製造方法 Pending JP2019527382A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022211287A JP2023052147A (ja) 2016-07-27 2022-12-28 合金吸収体を有する極紫外線マスクブランク、及びその製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662367390P 2016-07-27 2016-07-27
US62/367,390 2016-07-27
US15/652,501 US10877368B2 (en) 2016-07-27 2017-07-18 Extreme ultraviolet mask blank with alloy absorber and method of manufacture
US15/652,501 2017-07-18
PCT/US2017/042748 WO2018022372A1 (en) 2016-07-27 2017-07-19 Extreme ultraviolet mask blank with alloy absorber and method of manufacture

Related Child Applications (1)

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JP2022211287A Division JP2023052147A (ja) 2016-07-27 2022-12-28 合金吸収体を有する極紫外線マスクブランク、及びその製造方法

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JP2019527382A true JP2019527382A (ja) 2019-09-26

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JP2019503652A Pending JP2019527382A (ja) 2016-07-27 2017-07-19 合金吸収体を有する極紫外線マスクブランク、及びその製造方法
JP2022211287A Pending JP2023052147A (ja) 2016-07-27 2022-12-28 合金吸収体を有する極紫外線マスクブランク、及びその製造方法

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Country Status (5)

Country Link
US (3) US10877368B2 (enExample)
JP (2) JP2019527382A (enExample)
SG (1) SG11201811602QA (enExample)
TW (2) TWI763686B (enExample)
WO (1) WO2018022372A1 (enExample)

Cited By (12)

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KR20210093137A (ko) * 2020-01-16 2021-07-27 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Euv 포토 마스크 및 그 제조 방법
JP2021173977A (ja) * 2020-04-30 2021-11-01 凸版印刷株式会社 反射型フォトマスクブランクス及び反射型フォトマスク
KR20230073186A (ko) 2020-09-28 2023-05-25 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
KR20230119120A (ko) 2020-12-25 2023-08-16 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP2023535300A (ja) * 2020-07-13 2023-08-17 アプライド マテリアルズ インコーポレイテッド 極端紫外線マスク吸収体材料
JP2023545014A (ja) * 2020-10-06 2023-10-26 アプライド マテリアルズ インコーポレイテッド 極端紫外線マスク吸収剤材料
KR20230172589A (ko) * 2021-06-02 2023-12-22 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
JP7553735B1 (ja) 2024-03-01 2024-09-18 株式会社トッパンフォトマスク 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
JP2024153915A (ja) * 2021-01-08 2024-10-29 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP2025066631A (ja) * 2023-10-11 2025-04-23 エスアンドエス テック カンパニー リミテッド ＣｒＳｂ吸収膜を備えた極端紫外線リソグラフィ用ブランクマスク及びフォトマスク
JP7681153B1 (ja) 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
WO2025115437A1 (ja) * 2023-11-27 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

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TWI811037B (zh) 2016-07-27 2023-08-01 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
TWI763686B (zh) 2016-07-27 2022-05-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統
EP3454120B1 (en) * 2017-09-09 2024-05-01 IMEC vzw Method for manufacturing euv reticles and reticles for euv lithography
US10802393B2 (en) * 2017-10-16 2020-10-13 Globalfoundries Inc. Extreme ultraviolet (EUV) lithography mask
US10996553B2 (en) 2017-11-14 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
WO2019246500A1 (en) 2018-06-22 2019-12-26 Applied Materials, Inc. Catalyzed deposition of metal films
TW202008073A (zh) * 2018-07-19 2020-02-16 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
TWI835896B (zh) * 2018-10-26 2024-03-21 美商應用材料股份有限公司 具有後側塗層的極紫外線掩模
TW202026770A (zh) * 2018-10-26 2020-07-16 美商應用材料股份有限公司 用於極紫外線掩模吸收劑的ta-cu合金材料
TWI845579B (zh) 2018-12-21 2024-06-21 美商應用材料股份有限公司 極紫外線遮罩吸收器及用於製造的方法
TWI828843B (zh) 2019-01-31 2024-01-11 美商應用材料股份有限公司 極紫外線（ｅｕｖ）遮罩素材及其製造方法
US11249390B2 (en) * 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TW202035792A (zh) * 2019-01-31 2020-10-01 美商應用材料股份有限公司 極紫外光遮罩吸收體材料
TWI818151B (zh) 2019-03-01 2023-10-11 美商應用材料股份有限公司 物理氣相沉積腔室及其操作方法
TWI842830B (zh) 2019-03-01 2024-05-21 美商應用材料股份有限公司 物理氣相沉積腔室與沉積交替材料層的方法
TWI870386B (zh) 2019-03-01 2025-01-21 美商應用材料股份有限公司 Ｅｕｖ遮罩基材及其製造方法
TW202104667A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TW202104617A (zh) * 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836073B (zh) * 2019-05-22 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩坯體及其製造方法
TW202104666A (zh) * 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TW202104668A (zh) * 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TWI836072B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 具有嵌入吸收層之極紫外光遮罩
TWI845676B (zh) * 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TWI845677B (zh) * 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
KR102285098B1 (ko) * 2019-07-12 2021-08-04 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 그 제조방법
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CN113238455B (zh) 2020-05-22 2024-12-20 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
CN113267956B (zh) 2020-05-29 2024-12-27 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
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