TWI763686B - 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統 - Google Patents

具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統

Info

Publication number
TWI763686B
TWI763686B TW106123154A TW106123154A TWI763686B TW I763686 B TWI763686 B TW I763686B TW 106123154 A TW106123154 A TW 106123154A TW 106123154 A TW106123154 A TW 106123154A TW I763686 B TWI763686 B TW I763686B
Authority
TW
Taiwan
Prior art keywords
layer
absorber
euv
mask blank
reflective
Prior art date
Application number
TW106123154A
Other languages
English (en)
Chinese (zh)
Other versions
TW201830122A (zh
Inventor
維胡 吉達
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201830122A publication Critical patent/TW201830122A/zh
Application granted granted Critical
Publication of TWI763686B publication Critical patent/TWI763686B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Respiratory Apparatuses And Protective Means (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW106123154A 2016-07-27 2017-07-11 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統 TWI763686B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662367390P 2016-07-27 2016-07-27
US62/367,390 2016-07-27

Publications (2)

Publication Number Publication Date
TW201830122A TW201830122A (zh) 2018-08-16
TWI763686B true TWI763686B (zh) 2022-05-11

Family

ID=61012029

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106123154A TWI763686B (zh) 2016-07-27 2017-07-11 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統
TW111114004A TWI821984B (zh) 2016-07-27 2017-07-11 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW111114004A TWI821984B (zh) 2016-07-27 2017-07-11 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法

Country Status (5)

Country Link
US (3) US10877368B2 (enExample)
JP (2) JP2019527382A (enExample)
SG (1) SG11201811602QA (enExample)
TW (2) TWI763686B (enExample)
WO (1) WO2018022372A1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI811037B (zh) 2016-07-27 2023-08-01 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
TWI763686B (zh) 2016-07-27 2022-05-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統
EP3454120B1 (en) * 2017-09-09 2024-05-01 IMEC vzw Method for manufacturing euv reticles and reticles for euv lithography
US10802393B2 (en) * 2017-10-16 2020-10-13 Globalfoundries Inc. Extreme ultraviolet (EUV) lithography mask
US10996553B2 (en) 2017-11-14 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
WO2019246500A1 (en) 2018-06-22 2019-12-26 Applied Materials, Inc. Catalyzed deposition of metal films
TW202008073A (zh) * 2018-07-19 2020-02-16 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
TWI835896B (zh) * 2018-10-26 2024-03-21 美商應用材料股份有限公司 具有後側塗層的極紫外線掩模
TW202026770A (zh) * 2018-10-26 2020-07-16 美商應用材料股份有限公司 用於極紫外線掩模吸收劑的ta-cu合金材料
TWI845579B (zh) 2018-12-21 2024-06-21 美商應用材料股份有限公司 極紫外線遮罩吸收器及用於製造的方法
TWI828843B (zh) 2019-01-31 2024-01-11 美商應用材料股份有限公司 極紫外線（ｅｕｖ）遮罩素材及其製造方法
US11249390B2 (en) * 2019-01-31 2022-02-15 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TW202035792A (zh) * 2019-01-31 2020-10-01 美商應用材料股份有限公司 極紫外光遮罩吸收體材料
TWI818151B (zh) 2019-03-01 2023-10-11 美商應用材料股份有限公司 物理氣相沉積腔室及其操作方法
TWI842830B (zh) 2019-03-01 2024-05-21 美商應用材料股份有限公司 物理氣相沉積腔室與沉積交替材料層的方法
TWI870386B (zh) 2019-03-01 2025-01-21 美商應用材料股份有限公司 Ｅｕｖ遮罩基材及其製造方法
TW202104667A (zh) 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TW202104617A (zh) * 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836073B (zh) * 2019-05-22 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩坯體及其製造方法
TW202104666A (zh) * 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TW202104668A (zh) * 2019-05-22 2021-02-01 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TWI836072B (zh) 2019-05-22 2024-03-21 美商應用材料股份有限公司 具有嵌入吸收層之極紫外光遮罩
TWI845676B (zh) * 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TWI845677B (zh) * 2019-05-22 2024-06-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
KR102285098B1 (ko) * 2019-07-12 2021-08-04 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 그 제조방법
US11385536B2 (en) 2019-08-08 2022-07-12 Applied Materials, Inc. EUV mask blanks and methods of manufacture
US11531262B2 (en) * 2019-12-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask blanks and methods for depositing layers on mask blank
US11204545B2 (en) * 2020-01-16 2021-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
US11221554B2 (en) * 2020-01-17 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. EUV masks to prevent carbon contamination
US11630385B2 (en) 2020-01-24 2023-04-18 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
TW202129401A (zh) 2020-01-27 2021-08-01 美商應用材料股份有限公司 極紫外線遮罩坯體硬遮罩材料
TWI817073B (zh) 2020-01-27 2023-10-01 美商應用材料股份有限公司 極紫外光遮罩坯體硬遮罩材料
TW202131087A (zh) 2020-01-27 2021-08-16 美商應用材料股份有限公司 極紫外光遮罩吸收劑材料
TW202141165A (zh) 2020-03-27 2021-11-01 美商應用材料股份有限公司 極紫外光遮罩吸收材料
TWI836207B (zh) 2020-04-17 2024-03-21 美商應用材料股份有限公司 極紫外光遮罩吸收材料
US11300871B2 (en) 2020-04-29 2022-04-12 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
JP7695775B2 (ja) * 2020-04-30 2025-06-19 テクセンドフォトマスク株式会社 反射型フォトマスクブランクス及び反射型フォトマスク
JP7640231B2 (ja) * 2020-05-14 2025-03-05 テクセンドフォトマスク株式会社 反射型マスクブランク及び反射型マスク
DE102020206117A1 (de) * 2020-05-14 2021-11-18 Carl Zeiss Smt Gmbh Optisches Element, EUV-Lithographiesystem und Verfahren zum Bilden von Nanopartikeln
US11829062B2 (en) * 2020-05-22 2023-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
CN113238455B (zh) 2020-05-22 2024-12-20 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
CN113267956B (zh) 2020-05-29 2024-12-27 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
US11592737B2 (en) 2020-05-29 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
US11619875B2 (en) * 2020-06-29 2023-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
TW202202641A (zh) 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料
JPWO2022065421A1 (enExample) 2020-09-28 2022-03-31
US11609490B2 (en) * 2020-10-06 2023-03-21 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
JPWO2022138360A1 (enExample) 2020-12-25 2022-06-30
JP7538050B2 (ja) * 2021-01-08 2024-08-21 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US11513437B2 (en) 2021-01-11 2022-11-29 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
US11592738B2 (en) 2021-01-28 2023-02-28 Applied Materials, Inc. Extreme ultraviolet mask absorber materials
WO2022164760A1 (en) * 2021-01-29 2022-08-04 The Regents Of The University Of California Mask absorber layers for extreme ultraviolet lithography
US12181797B2 (en) * 2021-05-28 2024-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with alloy based absorbers
JP7614949B2 (ja) * 2021-06-02 2025-01-16 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
US20230013260A1 (en) * 2021-07-09 2023-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Interstitial type absorber for extreme ultraviolet mask
US11815803B2 (en) 2021-08-30 2023-11-14 Applied Materials, Inc. Multilayer extreme ultraviolet reflector materials
US11782337B2 (en) 2021-09-09 2023-10-10 Applied Materials, Inc. Multilayer extreme ultraviolet reflectors
KR20250051883A (ko) * 2023-10-11 2025-04-18 주식회사 에스앤에스텍 ＣｒＳｂ 흡수막을 구비한 극자외선 리소그래피용 블랭크마스크 및 포토마스크
WO2025115437A1 (ja) * 2023-11-27 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法
JP7553735B1 (ja) 2024-03-01 2024-09-18 株式会社トッパンフォトマスク 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
JP7557098B1 (ja) * 2024-04-11 2024-09-26 株式会社トッパンフォトマスク 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
JP7681153B1 (ja) 2024-04-11 2025-05-21 テクセンドフォトマスク株式会社 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US20150064611A1 (en) * 2013-08-30 2015-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask
US20160011502A1 (en) * 2014-07-11 2016-01-14 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
WO2016007613A1 (en) * 2014-07-11 2016-01-14 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
TW201606358A (zh) * 2014-07-11 2016-02-16 應用材料股份有限公司 極紫外線覆蓋層及其之製造與微影方法

Family Cites Families (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US6323131B1 (en) 1998-06-13 2001-11-27 Agere Systems Guardian Corp. Passivated copper surfaces
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6562522B1 (en) 1999-10-29 2003-05-13 Intel Corporation Photomasking
US6583068B2 (en) 2001-03-30 2003-06-24 Intel Corporation Enhanced inspection of extreme ultraviolet mask
DE10155112B4 (de) 2001-11-09 2006-02-02 Infineon Technologies Ag Reflexionsmaske für die EUV-Lithographie und Herstellungsverfahren dafür
EP1333323A3 (en) 2002-02-01 2004-10-06 Nikon Corporation Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same
US7390596B2 (en) 2002-04-11 2008-06-24 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
US6835503B2 (en) 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
US6641899B1 (en) 2002-11-05 2003-11-04 International Business Machines Corporation Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
US6908713B2 (en) 2003-02-05 2005-06-21 Intel Corporation EUV mask blank defect mitigation
JP4099589B2 (ja) * 2004-02-20 2008-06-11 ソニー株式会社 マスクパターン補正方法、露光用マスクおよびマスク製造方法
US7407729B2 (en) 2004-08-05 2008-08-05 Infineon Technologies Ag EUV magnetic contrast lithography mask and manufacture thereof
KR20070054651A (ko) 2004-09-17 2007-05-29 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크스 및 그 제조방법
JP2006130375A (ja) * 2004-11-02 2006-05-25 Bridgestone Corp 水素貯蔵及び発生用触媒構造体並びにそれを用いた水素の貯蔵及び発生方法
US8575021B2 (en) 2004-11-22 2013-11-05 Intermolecular, Inc. Substrate processing including a masking layer
US20060222961A1 (en) * 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
FR2884965B1 (fr) 2005-04-26 2007-06-08 Commissariat Energie Atomique Structure de blanc de masque ajustable pour masque euv a decalage de phase
US7432201B2 (en) 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
KR20070036519A (ko) 2005-09-29 2007-04-03 주식회사 하이닉스반도체 반사형 마스크
JP4652946B2 (ja) 2005-10-19 2011-03-16 Ｈｏｙａ株式会社 反射型マスクブランク用基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US20070090084A1 (en) 2005-10-20 2007-04-26 Pei-Yang Yan Reclaim method for extreme ultraviolet lithography mask blank and associated products
JP4926523B2 (ja) 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
KR20080001023A (ko) 2006-06-29 2008-01-03 주식회사 에스앤에스텍 극자외선 반사형 블랭크 마스크와 포토마스크 및 그제조방법
JP5194888B2 (ja) 2007-09-27 2013-05-08 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法並びに半導体素子の製造方法
JP5584409B2 (ja) * 2008-02-21 2014-09-03 キヤノンアネルバ株式会社 スパッタリング装置およびその制御方法
KR100972863B1 (ko) 2008-04-22 2010-07-28 주식회사 하이닉스반도체 극자외선 리소그라피 마스크 및 그 제조 방법
WO2010007955A1 (ja) 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
DE102008042212A1 (de) 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
US8587662B1 (en) 2008-11-06 2013-11-19 Target Brands, Inc. Theft trend analysis and response
KR101095681B1 (ko) 2008-12-26 2011-12-19 주식회사 하이닉스반도체 극자외선 리소그래피를 위한 포토마스크 및 그 제조방법
JP5609865B2 (ja) * 2009-04-02 2014-10-22 凸版印刷株式会社 反射型フォトマスクおよび反射型フォトマスクブランク
EP2264460A1 (en) 2009-06-18 2010-12-22 Nxp B.V. Device having self-assembled-monolayer
JP5766393B2 (ja) 2009-07-23 2015-08-19 株式会社東芝 反射型露光用マスクおよび半導体装置の製造方法
JP5590113B2 (ja) * 2010-03-02 2014-09-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
KR101625382B1 (ko) 2010-04-29 2016-05-30 (주)에스앤에스텍 극자외선용 반사형 블랭크 마스크, 포토마스크 및 그의 제조방법
JP5830089B2 (ja) * 2010-06-15 2015-12-09 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法
US8764995B2 (en) 2010-08-17 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
KR20140004057A (ko) * 2010-08-24 2014-01-10 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
EP2617076B1 (en) 2010-09-15 2014-12-10 Ricoh Company, Limited Electromechanical transducing device and manufacturing method thereof
JP6013720B2 (ja) 2010-11-22 2016-10-25 芝浦メカトロニクス株式会社 反射型マスクの製造方法、および反射型マスクの製造装置
JP5594106B2 (ja) * 2010-12-09 2014-09-24 大日本印刷株式会社 反射型マスクおよびその製造方法
DE102011075579A1 (de) * 2011-05-10 2012-11-15 Carl Zeiss Smt Gmbh Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Spiegel
JP5772261B2 (ja) * 2011-06-10 2015-09-02 株式会社ニコン マスクの保護装置及び搬送装置、露光装置、並びにデバイス製造方法
JP5935804B2 (ja) * 2011-09-01 2016-06-15 旭硝子株式会社 反射型マスクブランク及び反射型マスクブランクの製造方法
WO2013077430A1 (ja) 2011-11-25 2013-05-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
JP2013120868A (ja) 2011-12-08 2013-06-17 Dainippon Printing Co Ltd 反射型マスクブランクス、反射型マスク、および、それらの製造方法
US8691476B2 (en) 2011-12-16 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and method for forming the same
KR20130085774A (ko) 2012-01-20 2013-07-30 에스케이하이닉스 주식회사 Ｅｕｖ 마스크
US8877409B2 (en) * 2012-04-20 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reflective mask and method of making same
US8658333B2 (en) 2012-06-04 2014-02-25 Nanya Technology Corporation Reflective mask
US8765331B2 (en) * 2012-08-17 2014-07-01 International Business Machines Corporation Reducing edge die reflectivity in extreme ultraviolet lithography
US9335206B2 (en) * 2012-08-30 2016-05-10 Kla-Tencor Corporation Wave front aberration metrology of optics of EUV mask inspection system
US8932785B2 (en) 2012-10-16 2015-01-13 Advanced Mask Technology Center Gmbh & Co. Kg EUV mask set and methods of manufacturing EUV masks and integrated circuits
JP6081134B2 (ja) * 2012-10-17 2017-02-15 株式会社日立製作所 垂直磁気記録媒体及び磁気記憶装置
US9146458B2 (en) 2013-01-09 2015-09-29 Kabushiki Kaisha Toshiba EUV mask
US9442387B2 (en) 2013-02-01 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process
US9135499B2 (en) 2013-03-05 2015-09-15 Tyco Fire & Security Gmbh Predictive theft notification for the prevention of theft
US20140254001A1 (en) 2013-03-07 2014-09-11 Globalfoundries Inc. Fabry-perot thin absorber for euv reticle and a method of making
US9298081B2 (en) 2013-03-08 2016-03-29 Globalfoundries Inc. Scattering enhanced thin absorber for EUV reticle and a method of making
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9310675B2 (en) 2013-03-15 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof
US9091947B2 (en) 2013-07-19 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
KR101567057B1 (ko) 2013-11-15 2015-11-09 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
JP6301127B2 (ja) 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US10279488B2 (en) 2014-01-17 2019-05-07 Knightscope, Inc. Autonomous data machines and systems
US9329597B2 (en) 2014-01-17 2016-05-03 Knightscope, Inc. Autonomous data machines and systems
US9195132B2 (en) * 2014-01-30 2015-11-24 Globalfoundries Inc. Mask structures and methods of manufacturing
US11183375B2 (en) 2014-03-31 2021-11-23 Applied Materials, Inc. Deposition system with multi-cathode and method of manufacture thereof
KR20160002332A (ko) 2014-06-30 2016-01-07 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
US9612522B2 (en) 2014-07-11 2017-04-04 Applied Materials, Inc. Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor
US10031411B2 (en) * 2014-11-26 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle for EUV mask and fabrication thereof
US9709884B2 (en) * 2014-11-26 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and manufacturing method by using the same
US9471866B2 (en) 2015-01-05 2016-10-18 Tyco Fire and Securtiy GmbH Anti-theft system used for customer service
KR101726045B1 (ko) 2015-06-04 2017-04-13 한양대학교 산학협력단 극자외선 노광 공정용 마스크, 및 그 제조 방법
TWI694304B (zh) 2015-06-08 2020-05-21 日商Ａｇｃ股份有限公司 Ｅｕｖ微影術用反射型光罩基底
KR101829604B1 (ko) 2015-08-17 2018-03-29 주식회사 에스앤에스텍 극자외선용 포토마스크 및 그 제조방법
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US20170092533A1 (en) 2015-09-29 2017-03-30 Applied Materials, Inc. Selective silicon dioxide deposition using phosphonic acid self assembled monolayers as nucleation inhibitor
US10163629B2 (en) 2015-11-16 2018-12-25 Applied Materials, Inc. Low vapor pressure aerosol-assisted CVD
US9791771B2 (en) * 2016-02-11 2017-10-17 Globalfoundries Inc. Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure
WO2017151639A1 (en) 2016-03-03 2017-09-08 Applied Materials, Inc. Improved self-assembled monolayer blocking with intermittent air-water exposure
US10061191B2 (en) 2016-06-01 2018-08-28 Taiwan Semiconductor Manufacturing Co., Ltd. High durability extreme ultraviolet photomask
TWI811037B (zh) 2016-07-27 2023-08-01 美商應用材料股份有限公司 具多層吸收劑的極紫外遮罩坯料及製造方法
TWI763686B (zh) 2016-07-27 2022-05-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統
JP6863169B2 (ja) 2017-08-15 2021-04-21 Ａｇｃ株式会社 反射型マスクブランク、および反射型マスク
EP3454119B1 (en) 2017-09-09 2023-12-27 IMEC vzw Euv absorbing alloys

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US20150064611A1 (en) * 2013-08-30 2015-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme Ultraviolet (Euv) Mask And Method Of Fabricating The Euv Mask
US20160011502A1 (en) * 2014-07-11 2016-01-14 Applied Materials, Inc. Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof
WO2016007613A1 (en) * 2014-07-11 2016-01-14 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
TW201606358A (zh) * 2014-07-11 2016-02-16 應用材料股份有限公司 極紫外線覆蓋層及其之製造與微影方法

Also Published As

Publication number Publication date
TW201830122A (zh) 2018-08-16
SG11201811602QA (en) 2019-02-27
TW202232225A (zh) 2022-08-16
US20180031965A1 (en) 2018-02-01
US20210124256A1 (en) 2021-04-29
WO2018022372A1 (en) 2018-02-01
US20220163882A1 (en) 2022-05-26
JP2023052147A (ja) 2023-04-11
JP2019527382A (ja) 2019-09-26
US10877368B2 (en) 2020-12-29
TWI821984B (zh) 2023-11-11

Similar Documents

Publication Publication Date Title
TWI763686B (zh) 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統
US11754917B2 (en) Extreme ultraviolet mask blank with multilayer absorber and method of manufacture
US20200371429A1 (en) Extreme ultraviolet mask absorber materials
US11609490B2 (en) Extreme ultraviolet mask absorber materials
US20200026178A1 (en) Extreme Ultraviolet Mask Absorber Materials
CN115053180A (zh) 极紫外掩模坯料硬掩模材料
TWI845677B (zh) 極紫外光遮罩吸收材料
US20220350233A1 (en) Extreme ultraviolet mask absorber materials
US11513437B2 (en) Extreme ultraviolet mask absorber materials
US11630385B2 (en) Extreme ultraviolet mask absorber materials
US20200278603A1 (en) Extreme Ultraviolet Mask Blank With Multilayer Absorber And Method Of Manufacture
CN115485616A (zh) 远紫外掩模吸收材料
US11592738B2 (en) Extreme ultraviolet mask absorber materials
US11300872B2 (en) Extreme ultraviolet mask absorber materials
US11275303B2 (en) Extreme ultraviolet mask absorber matertals
US20200371427A1 (en) Extreme ultraviolet mask absorber materials