JP2019525526A - 高q値を有する圧電mems共振子 - Google Patents
高q値を有する圧電mems共振子 Download PDFInfo
- Publication number
- JP2019525526A JP2019525526A JP2018565016A JP2018565016A JP2019525526A JP 2019525526 A JP2019525526 A JP 2019525526A JP 2018565016 A JP2018565016 A JP 2018565016A JP 2018565016 A JP2018565016 A JP 2018565016A JP 2019525526 A JP2019525526 A JP 2019525526A
- Authority
- JP
- Japan
- Prior art keywords
- resonator
- mems
- mems resonator
- silicon layer
- piezoelectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 239000013078 crystal Substances 0.000 claims abstract description 46
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 17
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000013461 design Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000105 evaporative light scattering detection Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
- H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H2009/2442—Square resonators
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Abstract
Description
本出願は、引用によりその全体が本明細書に組み入れられる、2016年7月12日出願の「高Q値を有する圧電MEMS共振子」と題する米国特許非仮出願第15/207,801号の利益を主張するものである。
Claims (20)
- 第1の表面及び前記第1の表面と対向する第2の表面を有するシリコン層と、
前記シリコン層の前記第1の表面の上方に配置され、前記シリコン層の前記第1の表面に直交する方向に対して5°に等しいか又はそれより大きい角度の方向に延びる結晶軸を有する、圧電層と、
前記圧電層の対向する表面に接してそれぞれ配置される一対の電極と、
を備え、
前記結晶軸は、前記圧電層の個々の結晶の軸の平均である、
MEMS共振子。 - 前記MEMS共振子は、前記一対の電極が電流で励起されるとき、前記圧電層の主としてx、y面内で振動する輪郭すべりモード共振子である、請求項1に記載のMEMS共振子。
- 前記輪郭すべりモード共振子はラーメモード共振子である、請求項2に記載のMEMS共振子。
- 前記結晶軸は、前記シリコン層の前記第1の表面に直交する前記方向に対して10°に等しいか又はそれより大きい角度の方向に延びる、請求項1に記載のMEMS共振子。
- 前記結晶軸は、前記シリコン層の前記第1の表面に直交する方向に対して40°〜75°の間の角度の方向に延びる、請求項4に記載のMEMS共振子。
- 前記結晶軸は、前記シリコン層の前記第1の表面に直交する前記方向に対して56°の角度の方向に延びる、請求項5に記載のMEMS共振子。
- 前記圧電層は窒化アルミニウム(AlN)を含み、前記一対の電極はモリブデン(Mo)を含む、請求項1に記載のMEMS共振子。
- 前記圧電層の隣接する縁は、前記シリコン層の結晶軸に対して[100]及び[010]方向に沿って配向される、請求項1に記載のMEMS共振子。
- 前記圧電層の隣接する縁は、前記シリコン層の結晶軸に対して[110]方向に沿って配向される、請求項1に記載のMEMS共振子。
- 前記シリコン層、前記圧電層、及び前記一対の電極は、集合的に、x、y面内の矩形を形成する、請求項1に記載のMEMS共振子。
- 前記MEMS共振子の前記矩形は、各々が20μm〜300μmの間の長さを有する辺を有し、前記MEMS共振子の厚さは5μm〜30μmの間である、請求項10に記載のMEMS共振子。
- 前記シリコン層は、前記一対の電極のうちの1つを形成する、請求項1に記載のMEMS共振子。
- 各々が、
第1の表面及び前記第1の表面と対向する第2の表面を有するシリコン層と、
前記シリコン層の前記第1の表面の上方に配置され、前記シリコン層の前記第1の表面に直交する方向に対して5°に等しいか又はそれより大きい角度の方向に延びる結晶軸を有する、圧電層と、
前記圧電層の対向する表面に接してそれぞれ配置される一対の電極と、
を有する、複数のMEMS共振子を備え、
前記複数のMEMS共振子の各々は、アレイとして互いに対して横方向に配置され、
前記結晶軸は、前記圧電層の個々の結晶の軸の平均である、
MEMS共振子アレイ。 - 前記MEMS共振子の各々は、前記一対の電極が電流で励起されるとき、前記圧電層の主としてx、y面内で振動する輪郭すべりモード共振子である、請求項13に記載のMEMS共振子アレイ。
- 各々の輪郭すべりモード共振子はラーメモード共振子である、請求項14に記載のMEMS共振子アレイ。
- 各々のMEMS共振子の前記結晶軸は、前記シリコン層の前記第1の表面に直交する前記方向に対して10°に等しいか又はそれより大きい角度の方向に延びる、請求項13に記載のMEMS共振子アレイ。
- 各々のMEMS共振子の前記結晶軸は、前記シリコン層の前記第1の表面に直交する前記方向に対して40°〜75°の間の角度の方向に延びる、請求項13に記載のMEMS共振子アレイ。
- 各々のMEMS共振子の前記結晶軸は、前記シリコン層の前記第1の表面に直交する前記方向に対して56°の角度の方向に延びる、請求項17に記載のMEMS共振子アレイ。
- 各々のMEMS共振子の前記圧電層の隣接する縁は、前記シリコン層の結晶軸に対して[100]及び[010]方向に沿って配向される、請求項13に記載のMEMS共振子アレイ。
- 各々のMEMS共振子の前記圧電層の隣接する縁は、前記シリコン層の結晶軸に対して[110]方向に沿って配向される、請求項13に記載のMEMS共振子アレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/207,801 US10291203B2 (en) | 2016-07-12 | 2016-07-12 | Piezoelectric MEMS resonator with a high quality factor |
US15/207,801 | 2016-07-12 | ||
PCT/US2017/014940 WO2018013175A1 (en) | 2016-07-12 | 2017-01-25 | Piezoelectric mems resonator with a high quality factor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019525526A true JP2019525526A (ja) | 2019-09-05 |
JP6756991B2 JP6756991B2 (ja) | 2020-09-16 |
Family
ID=60940790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018565016A Active JP6756991B2 (ja) | 2016-07-12 | 2017-01-25 | 高q値を有する圧電mems共振子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10291203B2 (ja) |
JP (1) | JP6756991B2 (ja) |
CN (1) | CN109417123A (ja) |
WO (1) | WO2018013175A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021064734A (ja) * | 2019-10-16 | 2021-04-22 | Tdk株式会社 | 電子デバイス用素子 |
WO2023162301A1 (ja) * | 2022-02-28 | 2023-08-31 | 株式会社村田製作所 | 共振子、共振装置、及び共振子製造方法 |
WO2023171728A1 (ja) * | 2022-03-10 | 2023-09-14 | 日東電工株式会社 | センサデバイス |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11533042B2 (en) | 2018-01-16 | 2022-12-20 | Georgia Tech Research Corporation | Distributed-mode beam and frame resonators for high frequency timing circuits |
US11824511B2 (en) | 2018-03-21 | 2023-11-21 | Qorvo Us, Inc. | Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation |
US11401601B2 (en) * | 2019-09-13 | 2022-08-02 | Qorvo Us, Inc. | Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same |
CN111224639B (zh) * | 2020-01-19 | 2020-11-27 | 中国人民解放军军事科学院国防科技创新研究院 | 一种基于二维异质薄膜的谐振频率自适应调控系统 |
KR102430218B1 (ko) * | 2020-10-20 | 2022-08-11 | 한국전자기술연구원 | AlN(질화알루미늄) 박막 증착 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60103709A (ja) * | 1983-10-13 | 1985-06-08 | アメリカ合衆国 | 音響共振器とその製造方法 |
US4640756A (en) * | 1983-10-25 | 1987-02-03 | The United States Of America As Represented By The United States Department Of Energy | Method of making a piezoelectric shear wave resonator |
JP2007028612A (ja) * | 2005-07-18 | 2007-02-01 | Samsung Electronics Co Ltd | フィルムバルク音響共振器及びその製造方法 |
JP2014507096A (ja) * | 2011-02-17 | 2014-03-20 | テクノロジアン テュトキムスケスクス ヴェーテーテー | 新規な微小機械デバイス |
WO2014185280A1 (ja) * | 2013-05-13 | 2014-11-20 | 株式会社村田製作所 | 振動装置 |
WO2016006433A1 (ja) * | 2014-07-10 | 2016-01-14 | 株式会社村田製作所 | 振動装置 |
WO2016098868A1 (ja) * | 2014-12-17 | 2016-06-23 | 株式会社村田製作所 | 圧電振動子及び圧電振動装置 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970004619B1 (ko) * | 1987-10-19 | 1997-03-29 | 상요덴기 가부시끼가이샤 | 탄성 표면파 소자 |
FR2629289B1 (fr) | 1988-03-24 | 1990-12-28 | Onera (Off Nat Aerospatiale) | Resonateurs en materiau solide elastique et oscillateurs a haute stabilite |
JPH0388406A (ja) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
US20040007940A1 (en) * | 2002-07-15 | 2004-01-15 | Asia Pacific Microsystems, Inc. | Thin film acoustic wave device and the manufacturing method thereof |
EP1386979B1 (en) * | 2002-08-02 | 2008-03-05 | Fujikura Ltd. | Method of producing polycrystalline thin film and method of producing an oxide superconducting element |
CN1902817B (zh) | 2004-01-13 | 2010-12-15 | 株式会社村田制作所 | 边界声波装置 |
JP2006203304A (ja) | 2005-01-18 | 2006-08-03 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器及びそれを用いた発振器並びにそれを内蔵した半導体集積回路 |
US7545239B2 (en) * | 2006-12-20 | 2009-06-09 | Sitime Inc. | Serrated MEMS resonators |
US7639105B2 (en) | 2007-01-19 | 2009-12-29 | Georgia Tech Research Corporation | Lithographically-defined multi-standard multi-frequency high-Q tunable micromechanical resonators |
US8004165B2 (en) | 2007-09-05 | 2011-08-23 | Seiko Epson Corporation | Tuning fork oscillating piece, tuning fork oscillator, and acceleration sensor |
JP5136134B2 (ja) * | 2008-03-18 | 2013-02-06 | ソニー株式会社 | バンドパスフィルタ装置、その製造方法、テレビジョンチューナおよびテレビジョン受信機 |
JP5226409B2 (ja) | 2008-07-17 | 2013-07-03 | 太陽誘電株式会社 | 共振デバイス、通信モジュール、通信装置、共振デバイスの製造方法 |
FR2946479A1 (fr) * | 2009-06-09 | 2010-12-10 | Commissariat Energie Atomique | Resonateur electromecanique a ancrage resonant. |
JP2011004035A (ja) | 2009-06-17 | 2011-01-06 | Seiko Epson Corp | 屈曲振動片および屈曲振動片の製造方法 |
JP4513927B1 (ja) * | 2009-09-30 | 2010-07-28 | 住友電気工業株式会社 | Iii族窒化物半導体基板、エピタキシャル基板及び半導体デバイス |
US9847768B2 (en) | 2009-11-23 | 2017-12-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Polarity determining seed layer and method of fabricating piezoelectric materials with specific C-axis |
FR2954626B1 (fr) | 2009-12-23 | 2013-12-06 | Commissariat Energie Atomique | Resonateur acoustique comprenant un electret, et procede de fabrication de ce resonateur, application aux filtres commutables a resonateurs couples |
CN101775584A (zh) * | 2010-01-08 | 2010-07-14 | 湖北大学 | 一种具有同质缓冲层的c轴倾斜AlN薄膜制备方法 |
US8796904B2 (en) * | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
US8587391B2 (en) | 2010-02-23 | 2013-11-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic coupling layer for coupled resonator filters and method of fabricating acoustic coupling layer |
US8916942B2 (en) | 2010-05-13 | 2014-12-23 | Valtion Teknillinen Tutkimuskeskus | Microelectromechanical resonator and a method for producing the same |
US20110304412A1 (en) | 2010-06-10 | 2011-12-15 | Hao Zhang | Acoustic Wave Resonators and Methods of Manufacturing Same |
FI20105851A (fi) | 2010-08-13 | 2012-02-14 | Valtion Teknillinen | Mikromekaaninen resonaattori ja menetelmä sen valmistamiseksi |
FI124453B (fi) | 2010-08-13 | 2014-09-15 | Valtion Teknillinen | Mikromekaaninen resonaattorijärjestelmä ja menetelmä sen valmistamiseksi |
US9090451B1 (en) | 2011-07-19 | 2015-07-28 | Integrated Device Technology, Inc. | Microelectromechanical resonators having offset [100] and [110] crystal orientations |
US9525399B2 (en) | 2011-10-31 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Planarized electrode for improved performance in bulk acoustic resonators |
WO2015111503A1 (ja) | 2014-01-24 | 2015-07-30 | 株式会社村田製作所 | 圧電振動子及び圧電振動装置 |
US9922809B2 (en) * | 2015-10-14 | 2018-03-20 | Qorvo Us, Inc. | Deposition system for growth of inclined c-axis piezoelectric material structures |
-
2016
- 2016-07-12 US US15/207,801 patent/US10291203B2/en active Active
-
2017
- 2017-01-25 CN CN201780042061.6A patent/CN109417123A/zh active Pending
- 2017-01-25 JP JP2018565016A patent/JP6756991B2/ja active Active
- 2017-01-25 WO PCT/US2017/014940 patent/WO2018013175A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60103709A (ja) * | 1983-10-13 | 1985-06-08 | アメリカ合衆国 | 音響共振器とその製造方法 |
US4640756A (en) * | 1983-10-25 | 1987-02-03 | The United States Of America As Represented By The United States Department Of Energy | Method of making a piezoelectric shear wave resonator |
JP2007028612A (ja) * | 2005-07-18 | 2007-02-01 | Samsung Electronics Co Ltd | フィルムバルク音響共振器及びその製造方法 |
JP2014507096A (ja) * | 2011-02-17 | 2014-03-20 | テクノロジアン テュトキムスケスクス ヴェーテーテー | 新規な微小機械デバイス |
WO2014185280A1 (ja) * | 2013-05-13 | 2014-11-20 | 株式会社村田製作所 | 振動装置 |
WO2016006433A1 (ja) * | 2014-07-10 | 2016-01-14 | 株式会社村田製作所 | 振動装置 |
WO2016098868A1 (ja) * | 2014-12-17 | 2016-06-23 | 株式会社村田製作所 | 圧電振動子及び圧電振動装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021064734A (ja) * | 2019-10-16 | 2021-04-22 | Tdk株式会社 | 電子デバイス用素子 |
JP7428961B2 (ja) | 2019-10-16 | 2024-02-07 | Tdk株式会社 | 電子デバイス用素子 |
WO2023162301A1 (ja) * | 2022-02-28 | 2023-08-31 | 株式会社村田製作所 | 共振子、共振装置、及び共振子製造方法 |
WO2023171728A1 (ja) * | 2022-03-10 | 2023-09-14 | 日東電工株式会社 | センサデバイス |
Also Published As
Publication number | Publication date |
---|---|
CN109417123A (zh) | 2019-03-01 |
US10291203B2 (en) | 2019-05-14 |
US20180019728A1 (en) | 2018-01-18 |
WO2018013175A1 (en) | 2018-01-18 |
JP6756991B2 (ja) | 2020-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2019525526A (ja) | 高q値を有する圧電mems共振子 | |
JP6109752B2 (ja) | 新規な微小機械デバイス | |
JP6245265B2 (ja) | 振動装置及びその製造方法 | |
EP2603976B1 (en) | Micromechanical resonator and method for manufacturing thereof | |
CN107005224B (zh) | 温度补偿板谐振器 | |
JP6003994B2 (ja) | 振動装置及びその製造方法 | |
JP5381694B2 (ja) | 振動片、振動子、センサー及び電子部品 | |
JP7266077B2 (ja) | マイクロメカニカル共振器 | |
US10367469B2 (en) | Corner coupling resonator array | |
WO2015025716A1 (ja) | 圧電共振子及びその製造方法 | |
Jaakkola et al. | Piezoelectrically transduced single-crystal-silicon plate resonators | |
US20230008378A1 (en) | Resonance device | |
JP6948604B2 (ja) | 抑制されたスプリアスモードを伴うmems共振子 | |
JP7029114B2 (ja) | 高q mems共振子 | |
US11283423B2 (en) | Resonator and resonance device | |
JP3188929B2 (ja) | 振動ジャイロの振動体共振周波数の調整方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181212 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200306 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200428 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200622 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200729 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200811 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6756991 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |