JP2019519116A - 横型絶縁ゲートバイポーラトランジスタ及びその製造方法 - Google Patents
横型絶縁ゲートバイポーラトランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP2019519116A JP2019519116A JP2018566861A JP2018566861A JP2019519116A JP 2019519116 A JP2019519116 A JP 2019519116A JP 2018566861 A JP2018566861 A JP 2018566861A JP 2018566861 A JP2018566861 A JP 2018566861A JP 2019519116 A JP2019519116 A JP 2019519116A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- bipolar transistor
- insulated gate
- gate bipolar
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 239000002019 doping agent Substances 0.000 claims description 31
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000001459 lithography Methods 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (15)
- 基板と、
前記基板上に配置されたカソード端子と、
前記基板上に配置されたアノード端子であって、前記基板上に配置されたN型バッファ領域と、前記N型バッファ領域内に配置されたPウェルと、前記Pウェル内に配置されたN+領域と、前記N+領域の上に配置され前記Pウェルによって部分的に囲まれたトレンチと、前記トレンチ内に配置されたポリシリコンと、前記トレンチの両側に配置されたP+接合部と、前記P+接合部の両側に配置されたN+接合部とを備えるアノード端子と、
前記アノード端子と前記カソード端子との間に配置されたドリフト領域と、
前記アノード端子と前記カソード端子との間に配置されたゲートとを備える、横型絶縁ゲートバイポーラトランジスタ。 - 前記トレンチは、幅が底から上に向かって徐々に増加して傾斜を形成し、幅の狭い底部と幅の広い頂部とを有する構造である、請求項1に記載の横型絶縁ゲートバイポーラトランジスタ。
- 前記N型バッファ領域のドーパント濃度は、前記Pウェルのドーパント濃度よりも低く、前記Pウェルの前記ドーパント濃度は、前記P+接合部及び前記N+接合部のドーパント濃度よりも低い、請求項1に記載の横型絶縁ゲートバイポーラトランジスタ。
- 前記N型バッファ領域の前記ドーパント濃度は、2E15〜5E15cm−3の範囲内にあり、前記Pウェルの前記ドーパント濃度は、4E17〜8E17cm−3の範囲内にあり、前記P+接合部及び前記N+接合部の前記ドーパント濃度は、5E20〜10E20cm−3の範囲内にある、請求項3に記載の横型絶縁ゲートバイポーラトランジスタ。
- 前記アノード端子は、前記トレンチの内面上に配置された酸化層をさらに備え、前記酸化層は、前記トレンチの側壁上に配置された酸化膜と、前記トレンチの底部の両側に配置されたスペーサ構造とを含み、前記酸化層は、前記ポリシリコンがその下にある前記N+領域と直接接触するように、前記トレンチの底部の中央部に対応する位置にボイドを有する、請求項1に記載の横型絶縁ゲートバイポーラトランジスタ。
- 前記ポリシリコンのドーパント濃度は、1E21〜10E22cm−3の範囲内である、請求項1に記載の横型絶縁ゲートバイポーラトランジスタ。
- 前記横型絶縁ゲートバイポーラトランジスタは、シリコン・オン・インシュレータ型の横型絶縁ゲートバイポーラトランジスタであり、前記横型絶縁ゲートバイポーラトランジスタは、前記基板と前記ドリフト領域との間に配置された埋込み酸化層をさらに備え、前記基板は、P型基板であり、前記ドリフト領域は、N型ドリフト領域である、請求項1に記載の横型絶縁ゲートバイポーラトランジスタ。
- 横型絶縁ゲートバイポーラトランジスタの製造方法であって、
シリコンウエハにN型イオンを注入し、ドライブインを行いN型バッファ領域を形成し、
前記シリコンウエハの表面上にハードマスク層を堆積させ、フォトレジストを用いてトレンチリソグラフィ及びエッチングを行って前記ハードマスク層をエッチングしトレンチ窓を形成し、
前記トレンチ窓の下のシリコンをエッチングしてトレンチを形成し、
ライナー酸化を行って前記トレンチの内側表面にライナー酸化層を形成し、前記トレンチの側壁における前記ライナー酸化層の厚さが前記トレンチの底部における前記ライナー酸化層の厚さよりも大きくなされており、
前記トレンチ窓を通してP型イオンを注入し、前記イオンが前記ライナー酸化層を通過して前記トレンチ周りのN型バッファ領域内にPウェルを形成し、
前記トレンチ内に酸化層を堆積させ、前記酸化層のエッチング後に前記トレンチの側壁上に酸化膜と前記トレンチの底部の両側にスペーサ構造とを形成し、
N型イオンを前記トレンチ内に注入して、前記酸化膜及び前記スペーサ構造の遮断状況下で自己整合注入によりN+領域を形成し、
前記トレンチ内にポリシリコンを堆積して、前記ポリシリコンのエッチング後に前記ハードマスク層を剥離し、
前記Pウェル及び前記N+領域にアニールを行い、
リソグラフィおよびエッチングによって前記トレンチの両側にP+接合部と前記P+接合の両側にN+接合部とを形成するようになされている、横型絶縁ゲートバイポーラトランジスタの製造方法。 - 前記ハードマスク層は、窒化シリコン層である、請求項8に記載の方法。
- 前記トレンチ内に前記酸化層を堆積させ、前記酸化層のエッチング後に前記トレンチの側壁上に前記酸化膜と前記トレンチの前記底部の両側に前記スペーサ構造とを形成する前記ステップ中において、反応物質としてエチルオルトシリケートを用いて化学蒸着を行い、且つ異方性エッチングを行う、請求項8に記載の方法。
- 前記トレンチ内に前記ポリシリコンを堆積する前記ステップの前、及び前記トレンチ内に前記N型イオンを注入する前記ステップの後には、前記酸化層を洗浄するステップをさらに含む、請求項8に記載の方法。
- 前記トレンチ窓を通して前記P型イオンを注入し、前記イオンが前記酸化層を通過し、前記トレンチの周囲の前記N型バッファ領域内に前記Pウェルを形成する前記ステップ中において、複数の注入を行い、よりゆっくりと変化するドーパント濃度勾配を得られるようになされた、請求項8に記載の方法。
- 前記N型バッファ領域のドーパント濃度は、前記Pウェルのドーパント濃度よりも低く、前記Pウェルの前記ドーパント濃度は、前記P+接合部及び前記N+接合部のドーパント濃度よりも低い、請求項8に記載の方法。
- 前記N型バッファ領域の前記ドーパント濃度は、2E15〜5E15cm−3の範囲内にあり、前記Pウェルの前記ドーパント濃度は、4E17〜8E17cm−3の範囲内にあり、前記P+接合部及び前記N+接合部の前記ドーパント濃度は、5E20〜10E20cm−3の範囲内にある、請求項8に記載の方法。
- 前記横型絶縁ゲートバイポーラトランジスタは、シリコン・オン・インシュレータ型の横型絶縁ゲートバイポーラトランジスタであり、基板は、P型基板であり、ドリフト領域は、N型ドリフト領域である、請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610452720.0A CN107527811B (zh) | 2016-06-21 | 2016-06-21 | 横向绝缘栅双极型晶体管及其制造方法 |
CN201610452720.0 | 2016-06-21 | ||
PCT/CN2017/089279 WO2017219968A1 (zh) | 2016-06-21 | 2017-06-21 | 横向绝缘栅双极型晶体管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019519116A true JP2019519116A (ja) | 2019-07-04 |
JP6806805B2 JP6806805B2 (ja) | 2021-01-06 |
Family
ID=60734051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018566861A Active JP6806805B2 (ja) | 2016-06-21 | 2017-06-21 | 横型絶縁ゲートバイポーラトランジスタ及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10770572B2 (ja) |
EP (1) | EP3474330B1 (ja) |
JP (1) | JP6806805B2 (ja) |
KR (1) | KR102158345B1 (ja) |
CN (1) | CN107527811B (ja) |
WO (1) | WO2017219968A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158956B (zh) * | 2015-04-08 | 2020-02-11 | 无锡华润上华科技有限公司 | 具有resurf结构的ldmosfet及其制造方法 |
CN109728083A (zh) * | 2018-12-03 | 2019-05-07 | 珠海格力电器股份有限公司 | 一种绝缘栅双极型晶体管及其制备方法、电气设备 |
CN113555416B (zh) * | 2021-09-22 | 2021-12-31 | 四川上特科技有限公司 | 一种功率二极管器件 |
CN113793804B (zh) * | 2021-11-15 | 2022-02-22 | 微龛(广州)半导体有限公司 | 一种横向绝缘栅双极晶体管结构及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6313000B1 (en) * | 1999-11-18 | 2001-11-06 | National Semiconductor Corporation | Process for formation of vertically isolated bipolar transistor device |
JP2005101581A (ja) | 2003-08-29 | 2005-04-14 | Fuji Electric Holdings Co Ltd | 半導体装置 |
DE102004041622A1 (de) * | 2003-08-29 | 2005-03-24 | Fuji Electric Holdings Co. Ltd., Kawasaki | Halbleiterbauteil |
DE112005003720T5 (de) | 2005-10-12 | 2008-09-11 | Fuji Electric Holdings Co., Ltd., Kawasaki | SOI-Trench-Lateral-IGBT |
US7465964B2 (en) * | 2005-12-30 | 2008-12-16 | Cambridge Semiconductor Limited | Semiconductor device in which an injector region is isolated from a substrate |
CN2914330Y (zh) * | 2006-05-24 | 2007-06-20 | 杭州电子科技大学 | 抗esd的集成soi ligbt器件单元 |
US8354710B2 (en) * | 2008-08-08 | 2013-01-15 | Infineon Technologies Ag | Field-effect device and manufacturing method thereof |
US8253164B2 (en) | 2010-12-23 | 2012-08-28 | Force Mos Technology Co., Ltd. | Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts |
CN102148240B (zh) * | 2011-03-10 | 2012-08-29 | 电子科技大学 | 一种具有分裂阳极结构的soi-ligbt器件 |
CN102157550B (zh) * | 2011-03-10 | 2012-07-04 | 杭州电子科技大学 | 一种具有p埋层的纵向沟道SOI LIGBT器件单元 |
US9070735B2 (en) * | 2013-07-02 | 2015-06-30 | Cambridge Microelectronics Ltd. | Lateral power semiconductor transistors |
CN104347397B (zh) * | 2013-07-23 | 2018-02-06 | 无锡华润上华科技有限公司 | 注入增强型绝缘栅双极型晶体管的制造方法 |
CN105789298B (zh) | 2014-12-19 | 2019-06-07 | 无锡华润上华科技有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
-
2016
- 2016-06-21 CN CN201610452720.0A patent/CN107527811B/zh active Active
-
2017
- 2017-06-21 WO PCT/CN2017/089279 patent/WO2017219968A1/zh unknown
- 2017-06-21 EP EP17814706.2A patent/EP3474330B1/en active Active
- 2017-06-21 JP JP2018566861A patent/JP6806805B2/ja active Active
- 2017-06-21 US US16/311,276 patent/US10770572B2/en active Active
- 2017-06-21 KR KR1020187036722A patent/KR102158345B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP3474330B1 (en) | 2022-05-25 |
KR102158345B1 (ko) | 2020-09-23 |
KR20190008573A (ko) | 2019-01-24 |
EP3474330A4 (en) | 2020-01-22 |
WO2017219968A1 (zh) | 2017-12-28 |
JP6806805B2 (ja) | 2021-01-06 |
US20190245069A1 (en) | 2019-08-08 |
EP3474330A1 (en) | 2019-04-24 |
CN107527811A (zh) | 2017-12-29 |
US10770572B2 (en) | 2020-09-08 |
CN107527811B (zh) | 2020-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11121242B2 (en) | Method of operating a semiconductor device having a desaturation channel structure | |
KR19990013112A (ko) | 모스 트랜지스터 및 그 제조방법 | |
JP2010135791A (ja) | 半導体素子及びその製造方法 | |
US10084073B2 (en) | Lateral insulated-gate bipolar transistor and manufacturing method therefor | |
KR102158345B1 (ko) | 측면 절연 게이트 양극성 트랜지스터 및 이의 제조방법 | |
KR101530582B1 (ko) | 반도체 소자 및 이의 제조 방법 | |
CN112825327A (zh) | 半导体结构及其形成方法 | |
US10217828B1 (en) | Transistors with field plates on fully depleted silicon-on-insulator platform and method of making the same | |
CN112151619A (zh) | 碳化硅mosfet及其制造方法以及电子设备 | |
KR100525615B1 (ko) | 고내압 전계효과 트랜지스터 및 이를 형성하는 방법 | |
WO2023193370A1 (zh) | Igbt器件及其制造方法 | |
US9245986B2 (en) | Power semiconductor device and method of manufacturing the same | |
KR100806790B1 (ko) | 반도체 소자의 제조 방법 | |
US11715758B2 (en) | Super junction power device and method of making the same | |
CN111129131B (zh) | 平面栅igbt器件 | |
JP6430650B2 (ja) | 横型絶縁ゲートバイポーラトランジスタ | |
CN117497488B (zh) | 一种集成jfet的mos器件制备方法及mos器件 | |
JPH10335630A (ja) | 半導体装置及びその製造方法 | |
KR100405450B1 (ko) | 포켓형 접합층 구조를 가지는 dmos 트랜지스터 및그 제조 방법 | |
CN115360239A (zh) | 一种屏蔽栅功率vdmos器件及其制造方法 | |
KR100916892B1 (ko) | 반도체 소자 및 반도체 소자의 제조 방법 | |
KR20150056433A (ko) | 전력 반도체 소자 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200407 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200626 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201124 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201204 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6806805 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |