WO2017219968A1 - 横向绝缘栅双极型晶体管及其制造方法 - Google Patents
横向绝缘栅双极型晶体管及其制造方法 Download PDFInfo
- Publication number
- WO2017219968A1 WO2017219968A1 PCT/CN2017/089279 CN2017089279W WO2017219968A1 WO 2017219968 A1 WO2017219968 A1 WO 2017219968A1 CN 2017089279 W CN2017089279 W CN 2017089279W WO 2017219968 A1 WO2017219968 A1 WO 2017219968A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- trench
- doping concentration
- junction
- bipolar transistor
- well
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Definitions
- the present invention relates to a semiconductor process, and more particularly to a lateral insulated gate bipolar transistor, and to a method of fabricating a lateral insulated gate bipolar transistor.
- LIGBTs Lateral Insulated-Gate Bipolar Transistors
- LDMOS lateral double-diffused MOSFETs
- the turn-off time is long, so there is a problem that the power consumption is too large. Since the on-resistance and the off-time are inversely related to the hole concentration, how to balance the on-resistance and the off-time is the direction for continuous improvement of the LIGBT device.
- a lateral insulated gate bipolar transistor comprising a substrate, an anode end and a cathode end on the substrate, and a drift region and a gate between the anode end and the cathode end, the anode end including N on the substrate a type of buffer, a P-well in the N-type buffer, an N+ region in the P-well, a trench above the N+ region surrounded by the P-well portion, polysilicon in the trench, a P+ junction on both sides of the trench, and an N+ junction on both sides of the P+ junction.
- a method for fabricating a lateral insulated gate bipolar transistor includes: implanting N-type ions into a silicon wafer, and pushing a well to form an N-type buffer; depositing a hard mask layer on the surface of the silicon wafer, and using light Etching and etch etching, etching the hard mask layer out of the trench window; etching silicon under the trench window to form a trench; performing pad oxidation, in the trench The inner surface forms a pad oxide layer; the pad oxide layer has a thickness on the sidewall of the trench that is greater than the thickness at the bottom of the trench; P-type ions are implanted into the trench window, and ions pass through the oxide layer a P-well is formed in the N-type buffer around the trench; an oxide layer is deposited in the trench, and an oxide film is formed on the sidewall of the trench after etching, and a sidewall structure is formed on both sides of the trench; Injecting N-type ions into the trench, forming an N+ region by self-aligned implantation
- the laterally insulated gate bipolar transistor injects a large number of holes on the one hand, forming a significant conductance modulation effect to reduce the on-state resistance; on the other hand, when the device is turned off, the N+ region and the N+ junction can be It quickly absorbs minority holes and greatly reduces the turn-off loss.
- FIG. 1 is a schematic cross-sectional view of a laterally insulated gate bipolar transistor in an embodiment
- FIG. 2 is a flow chart showing a method of fabricating a laterally insulated gate bipolar transistor in an embodiment.
- semiconductor used herein is a technical term commonly used by those skilled in the art.
- the P+ type is simply represented as a heavily doped P-type, P-type representative.
- P type with doping concentration P-type represents P type with light doping concentration
- N+ type represents N type with heavy doping concentration
- N type represents N type with medium doping concentration
- N type represents light doping concentration N type.
- the lateral insulated gate bipolar transistor technology has a problem that the turn-off period is long, which leads to a low turn-on voltage drop due to the conductance modulation effect, and a problem that the turn-off time is long due to residual minority in the drift region. Therefore, how to balance the on-state voltage drop and turn-off time becomes the direction of continuous improvement of the lateral insulated gate bipolar transistor.
- the anode terminal includes an N-type buffer 42 on substrate 10, a P-well 44 in N-type buffer 42, an N+ region 46 in P-well 44, a trench above portion of N+ region 46 surrounded by P-well 44, trench The polysilicon 74 in the trench, the P+ junction 53 on both sides of the trench, and the N+ junction 55 on both sides of the P+ junction 53.
- the cathode end includes a P-region 52 on the substrate 10, a P-type body region 54 and an emitter N+ region 56 in the P-region 52, and a cathode as an electrode of the emitter.
- Metal 64 is a schematic structural view of a laterally insulated gate bipolar transistor in an embodiment, including a substrate 10, an anode terminal and a cathode terminal on the substrate 10, and a drift region 30 and a gate between the anode terminal and the cathode terminal.
- the anode terminal includes an N-type buffer 42 on substrate 10, a P-well 44 in N-type buffer 42,
- the collector including the P+ junction 53 and the N+ junction 55
- the N+ region 46, the P well 44, and the N-type buffer 42 form a low resistance path for hole injection, which starts faster.
- the residual minority holes in the drift region 30 are extracted, which ensures a fast switching speed and achieves the purpose of fast shutdown.
- the groove is a structure in which the bottom is narrow and the top is wide and gradually widens from the bottom to the upper to form a slope.
- the N-type buffer 42 has a doping concentration that is less than the doping concentration of the P-well 44, and the P-well 44 has a doping concentration that is less than the doping concentration of the P+ junction 53 and the N+ junction 55.
- the doping concentration of the N-type buffer 42 is 2E 15 to 5E 15 cm -3
- the doping concentration of the P well 44 is 4E 17 to 8E 17 cm -3 , P + junction 53 and N + junction 55 .
- the doping concentration is 5E 20 to 10E 20 cm -3 .
- the anode end further includes an oxide layer on the inner surface of the trench.
- the oxide layer includes an oxide film 72 on the sidewall of the trench and a sidewall structure 72a on both sides of the bottom of the trench. Oxide vacancies are present in the middle of the bottom of the trench such that the polysilicon 74 within the trench is in direct contact with the underlying N+ region 46.
- the polysilicon 74 on both sides of the bottom of the trench is N+ heavily doped polysilicon, and the doping concentration is on the order of E 21 to E 22 cm -3 .
- Silicon-on-insulator (SOI) technology is gaining increasing importance in HVIC and SPIC applications, while IGBT devices are low on-resistance due to high input impedance and conductance modulation effects in power device applications. Increasingly important. Compared with bulk silicon isolation devices, SOI's LIGBT devices have low leakage, low on-resistance, high input impedance, high package density, fast switching, significant noise reduction and feasible under high temperature operation due to slot isolation. Sexuality, a wider range of applications in automotive electronics, home electronics and communications and industrial applications. It is especially important to require high efficiency hole injection and significant conductance modulation to reduce the on-state resistance, but also to increase the device accordingly.
- the LIGBT shown in FIG. 1 is a silicon-on-insulator type lateral insulated gate bipolar transistor (SOI-LIGBT) including a buried oxide layer 20 between a substrate 10 and a drift region 30, wherein the substrate 10 is a P-type substrate.
- the drift region 30 is an N-type drift region.
- FIG. 2 is a flow chart showing a method of fabricating a laterally insulated gate bipolar transistor in an embodiment, including:
- a hard mask layer is deposited on the surface of the silicon wafer, and a photoresist is coated on the surface of the hard mask layer for photolithography, and the hard mask exposed under the photoresist is etched away to form a trench window.
- the silicon below is exposed.
- the hard mask layer is a silicon nitride layer. In other embodiments, other hard masks known in the art may also be employed.
- a pad oxide layer is also formed prior to depositing the hard mask layer.
- the structure is formed by etching to form a top width and a narrow bottom portion which are gradually narrowed from the top to the bottom to form a slope.
- the oxidation rate of the liner oxide is different, and the thickness of the oxide layer of the sidewall is greater than the thickness of the oxide layer at the bottom.
- P-type ions are implanted into the trench window, and ions pass through the oxide layer to form a P-well in the N-type buffer region around the trench. Since the thickness of the oxide layer on the sidewall of the trench is greater than the thickness of the oxide layer at the bottom, the concentration distribution of the P-type ions in the P well is affected accordingly.
- TEOS tetraethyl orthosilicate
- Other processes known in the art may also be used to form the oxide layer in other embodiments.
- an anisotropic etch is used to form an oxide film on the sidewall of the trench, and on both sides of the bottom of the trench The sidewall structure is formed, and a void of the oxide layer is formed in the middle of the bottom of the trench as a window of N+ implantation in step S270.
- N-type ions are implanted into the trench, and an N+ region is formed by self-aligned (Self-aligned) implantation under the barrier of the oxide film and the sidewall spacer.
- the N+ region formed by the self-aligned implant forms a vertical vertical NPN with the P-well and the N-type buffer as a key minority carrier lifetime control means.
- the step of depositing polysilicon further includes a step of rinsing the silicon dioxide in the vicinity of the N+ region to remove the silicon dioxide impurities.
- the polysilicon 74 is heavily doped with N+ and has a doping concentration of the order of E 21 to E 22 cm -3 .
- Thermal annealing to activate dopant ions in the P-well, N+ regions, and the like. After the annealing is completed, the manufacturing process of other regions of the device, such as a CMOS process, is performed.
- the annealing is performed accordingly, and then the subsequent process of the device is performed.
- the injection in step S250 is performed multiple times to obtain a more slowly doped concentration gradient, optimize the impurity profile of the P-well, and even achieve a substantially constant doping concentration in a certain region. It helps to increase the magnification of the N+/P-/N-triode and speed up the extraction of holes.
- FIG. 1 A schematic structural view of a lateral insulated gate bipolar transistor fabricated by the above method is shown in FIG.
- the laterally insulated gate bipolar transistor injects a large number of holes during forward conduction, forming a significant conductance modulation effect to reduce the on-state resistance; on the other hand, the N+ region and the N+ junction can be quickly turned off when the device is turned off.
- the ground absorption of minority pockets greatly reduces the turn-off loss. That is, by optimizing the collector of the LIGBT, the deep collector P-well and the P+ junction are introduced through the trench structure, and the N+ polysilicon and the N+ region are formed, and a widely distributed electron/hole current channel is formed during the forward conduction to improve the current capability.
- the optimized collector helps to collect fewer sub-holes faster and reduces turn-off time.
- the doping concentration of the N-type buffer 42 is 2E 15 to 5E 15 cm -3
- the doping concentration of the P well 44 is 4E 17 to 8E 17 cm -3 , P + junction 53 and N + junction 55 .
- the doping concentration is 5E 20 to 10E 20 cm -3 .
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (15)
- 一种横向绝缘栅双极型晶体管,包括:衬底;阴极端,位于所述衬底上;阳极端,位于所述衬底上,所述阳极端包括位于所述衬底上的N型缓冲区,位于所述N型缓冲区内的P阱,位于所述P阱内的N+区,位于所述N+区上方的被所述P阱部分包围的沟槽,位于所述沟槽内的多晶硅,位于所述沟槽两侧的P+结,以及位于所述P+结两侧的N+结;漂移区,位于所述阳极端和阴极端之间;以及栅极,位于所述阳极端和阴极端之间。
- 根据权利要求1所述的横向绝缘栅双极型晶体管,其特征在于,所述沟槽为底部窄且顶部宽的由下向上逐渐变宽形成坡度的结构。
- 根据权利要求1所述的横向绝缘栅双极型晶体管,其特征在于,所述N型缓冲区的掺杂浓度小于所述P阱的掺杂浓度,所述P阱的掺杂浓度小于所述P+结和N+结的掺杂浓度。
- 根据权利要求3所述的横向绝缘栅双极型晶体管,其特征在于,所述N型缓冲区的掺杂浓度为2E15~5E15cm-3,所述P阱的掺杂浓度为4E17~8E17cm-3,所述P+结和N+结的掺杂浓度为5E20~10E20cm-3。
- 根据权利要求1所述的横向绝缘栅双极型晶体管,其特征在于,所述阳极端还包括所述沟槽内表面的氧化层,所述氧化层包括位于沟槽侧壁的氧化膜和位于沟槽底部两侧的侧墙结构,所述沟槽底部的中部存在氧化层空缺使得所述多晶硅直接与下方的所述N+区接触。
- 根据权利要求1所述的横向绝缘栅双极型晶体管,其特征在于,所述多晶硅的掺杂浓度为1E21~10E22cm-3。
- 根据权利要求1所述的横向绝缘栅双极型晶体管,其特征在于,所述横向绝缘栅双极型晶体管为绝缘体上硅型横向绝缘栅双极型晶体管,所述横向绝缘栅双极型晶体管还包括位于衬底和漂移区之间的埋氧层,所述衬底为 P型衬底,所述漂移区为N型漂移区。
- 一种横向绝缘栅双极型晶体管的制造方法,包括:向硅晶圆注入N型离子,并推阱形成N型缓冲区;在所述硅晶圆表面淀积硬掩膜层,并使用光刻胶进行沟槽光刻和刻蚀,将所述硬掩膜层刻蚀出沟槽窗口;刻蚀所述沟槽窗口下方的硅,形成沟槽;进行衬垫氧化,在所述沟槽的内表面形成衬垫氧化层;所述衬垫氧化层在沟槽侧壁的厚度大于在沟槽底部的厚度;向所述沟槽窗口内注入P型离子,离子穿过所述氧化层在所述沟槽周围的N型缓冲区内形成P阱;在所述沟槽内淀积氧化层,刻蚀后在沟槽侧壁形成氧化膜、在沟槽底部两侧形成侧墙结构;向所述沟槽内注入N型离子,在所述氧化膜和侧墙的阻挡下通过自对准注入形成N+区;在所述沟槽内淀积多晶硅,刻蚀后将所述硬掩膜层剥除;对所述P阱和所述N+区进行退火;以及通过光刻和刻蚀在所述沟槽的两侧形成P+结、在所述P+结的两侧形成N+结。
- 根据权利要求8所述的方法,其特征在于,所述硬掩膜层为氮化硅层。
- 根据权利要求8所述的方法,其特征在于,所述在所述沟槽内淀积氧化层,刻蚀后在沟槽侧壁形成氧化膜、在沟槽底部两侧形成侧墙结构的步骤,是以正硅酸乙酯为反应剂进行化学气相淀积,并进行各向异性刻蚀。
- 根据权利要求8所述的方法,其特征在于,所述在所述沟槽内淀积多晶硅的步骤之前、所述向所述沟槽内注入N型离子的步骤之后,还包括进行氧化层漂洗的步骤。
- 根据权利要求8所述的方法,其特征在于,所述向所述沟槽窗口内注入P型离子,离子穿过所述氧化层在所述沟槽周围的N型缓冲区内形成P 阱的步骤中,是进行多次注入,以获得变化更缓的掺杂浓度梯度。
- 根据权利要求8所述的方法,其特征在于,所述N型缓冲区的掺杂浓度小于所述P阱的掺杂浓度,所述P阱的掺杂浓度小于所述P+结和N+结的掺杂浓度。
- 根据权利要求8所述的方法,其特征在于,所述N型缓冲区的掺杂浓度为2E15~5E15cm-3,所述P阱的掺杂浓度为4E17~8E17cm-3,所述P+结和N+结的掺杂浓度为5E20~10E20cm-3。
- 根据权利要求8所述的方法,其特征在于,所述横向绝缘栅双极型晶体管为绝缘体上硅型横向绝缘栅双极型晶体管,所述衬底为P型衬底,所述漂移区为N型漂移区。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018566861A JP6806805B2 (ja) | 2016-06-21 | 2017-06-21 | 横型絶縁ゲートバイポーラトランジスタ及びその製造方法 |
EP17814706.2A EP3474330B1 (en) | 2016-06-21 | 2017-06-21 | Lateral insulated-gate bipolar transistor and manufacturing method therefor |
US16/311,276 US10770572B2 (en) | 2016-06-21 | 2017-06-21 | Lateral insulated-gate bipolar transistor and manufacturing method therefor |
KR1020187036722A KR102158345B1 (ko) | 2016-06-21 | 2017-06-21 | 측면 절연 게이트 양극성 트랜지스터 및 이의 제조방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610452720.0A CN107527811B (zh) | 2016-06-21 | 2016-06-21 | 横向绝缘栅双极型晶体管及其制造方法 |
CN201610452720.0 | 2016-06-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017219968A1 true WO2017219968A1 (zh) | 2017-12-28 |
Family
ID=60734051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2017/089279 WO2017219968A1 (zh) | 2016-06-21 | 2017-06-21 | 横向绝缘栅双极型晶体管及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10770572B2 (zh) |
EP (1) | EP3474330B1 (zh) |
JP (1) | JP6806805B2 (zh) |
KR (1) | KR102158345B1 (zh) |
CN (1) | CN107527811B (zh) |
WO (1) | WO2017219968A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10249707B2 (en) * | 2015-04-08 | 2019-04-02 | Csmc Technologies Fab2 Co., Ltd. | Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor |
CN113555416A (zh) * | 2021-09-22 | 2021-10-26 | 四川上特科技有限公司 | 一种功率二极管器件 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109728083A (zh) * | 2018-12-03 | 2019-05-07 | 珠海格力电器股份有限公司 | 一种绝缘栅双极型晶体管及其制备方法、电气设备 |
CN113793804B (zh) * | 2021-11-15 | 2022-02-22 | 微龛(广州)半导体有限公司 | 一种横向绝缘栅双极晶体管结构及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090008675A1 (en) * | 2005-10-12 | 2009-01-08 | Fuji Electric Holdings Co., Ltd. | Soi trench lateral igbt |
CN102148240A (zh) * | 2011-03-10 | 2011-08-10 | 电子科技大学 | 一种具有分裂阳极结构的soi-ligbt器件 |
CN102157550A (zh) * | 2011-03-10 | 2011-08-17 | 杭州电子科技大学 | 一种具有p埋层的纵向沟道SOI LIGBT器件单元 |
CN104347397A (zh) * | 2013-07-23 | 2015-02-11 | 无锡华润上华半导体有限公司 | 注入增强型绝缘栅双极型晶体管的制造方法 |
CN105789298A (zh) * | 2014-12-19 | 2016-07-20 | 无锡华润上华半导体有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6313000B1 (en) * | 1999-11-18 | 2001-11-06 | National Semiconductor Corporation | Process for formation of vertically isolated bipolar transistor device |
JP2005101581A (ja) | 2003-08-29 | 2005-04-14 | Fuji Electric Holdings Co Ltd | 半導体装置 |
DE102004041622A1 (de) * | 2003-08-29 | 2005-03-24 | Fuji Electric Holdings Co. Ltd., Kawasaki | Halbleiterbauteil |
US7465964B2 (en) * | 2005-12-30 | 2008-12-16 | Cambridge Semiconductor Limited | Semiconductor device in which an injector region is isolated from a substrate |
CN2914330Y (zh) * | 2006-05-24 | 2007-06-20 | 杭州电子科技大学 | 抗esd的集成soi ligbt器件单元 |
US8354710B2 (en) * | 2008-08-08 | 2013-01-15 | Infineon Technologies Ag | Field-effect device and manufacturing method thereof |
US8253164B2 (en) | 2010-12-23 | 2012-08-28 | Force Mos Technology Co., Ltd. | Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts |
US9070735B2 (en) * | 2013-07-02 | 2015-06-30 | Cambridge Microelectronics Ltd. | Lateral power semiconductor transistors |
-
2016
- 2016-06-21 CN CN201610452720.0A patent/CN107527811B/zh active Active
-
2017
- 2017-06-21 WO PCT/CN2017/089279 patent/WO2017219968A1/zh unknown
- 2017-06-21 EP EP17814706.2A patent/EP3474330B1/en active Active
- 2017-06-21 JP JP2018566861A patent/JP6806805B2/ja active Active
- 2017-06-21 US US16/311,276 patent/US10770572B2/en active Active
- 2017-06-21 KR KR1020187036722A patent/KR102158345B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090008675A1 (en) * | 2005-10-12 | 2009-01-08 | Fuji Electric Holdings Co., Ltd. | Soi trench lateral igbt |
CN102148240A (zh) * | 2011-03-10 | 2011-08-10 | 电子科技大学 | 一种具有分裂阳极结构的soi-ligbt器件 |
CN102157550A (zh) * | 2011-03-10 | 2011-08-17 | 杭州电子科技大学 | 一种具有p埋层的纵向沟道SOI LIGBT器件单元 |
CN104347397A (zh) * | 2013-07-23 | 2015-02-11 | 无锡华润上华半导体有限公司 | 注入增强型绝缘栅双极型晶体管的制造方法 |
CN105789298A (zh) * | 2014-12-19 | 2016-07-20 | 无锡华润上华半导体有限公司 | 横向绝缘栅双极型晶体管及其制造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3474330A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10249707B2 (en) * | 2015-04-08 | 2019-04-02 | Csmc Technologies Fab2 Co., Ltd. | Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor |
CN113555416A (zh) * | 2021-09-22 | 2021-10-26 | 四川上特科技有限公司 | 一种功率二极管器件 |
CN113555416B (zh) * | 2021-09-22 | 2021-12-31 | 四川上特科技有限公司 | 一种功率二极管器件 |
Also Published As
Publication number | Publication date |
---|---|
EP3474330B1 (en) | 2022-05-25 |
KR102158345B1 (ko) | 2020-09-23 |
KR20190008573A (ko) | 2019-01-24 |
EP3474330A4 (en) | 2020-01-22 |
JP2019519116A (ja) | 2019-07-04 |
JP6806805B2 (ja) | 2021-01-06 |
US20190245069A1 (en) | 2019-08-08 |
EP3474330A1 (en) | 2019-04-24 |
CN107527811A (zh) | 2017-12-29 |
US10770572B2 (en) | 2020-09-08 |
CN107527811B (zh) | 2020-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11121242B2 (en) | Method of operating a semiconductor device having a desaturation channel structure | |
US9466700B2 (en) | Semiconductor device and method of fabricating same | |
US9660020B2 (en) | Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same | |
WO2017219968A1 (zh) | 横向绝缘栅双极型晶体管及其制造方法 | |
US10084073B2 (en) | Lateral insulated-gate bipolar transistor and manufacturing method therefor | |
US20100258867A1 (en) | Semiconductor device | |
US20160155821A1 (en) | Methods for Producing a Vertical Semiconductor and a Trench Gate Field Effect Semiconductor Device | |
WO2018121132A1 (zh) | Ldmos器件及其制作方法 | |
JP2010225833A (ja) | 半導体装置 | |
TWI455318B (zh) | 高壓半導體裝置及其製造方法 | |
CN109216276B (zh) | 一种mos管及其制造方法 | |
WO2018000223A1 (zh) | 一种绝缘栅双极型晶体管结构及其制造方法 | |
US10217828B1 (en) | Transistors with field plates on fully depleted silicon-on-insulator platform and method of making the same | |
US20230326962A1 (en) | Super junction power device | |
CN116936626A (zh) | Igbt器件及其制造方法 | |
CN114141877A (zh) | 一种碳化硅ldmos及其制造方法 | |
JP6430650B2 (ja) | 横型絶縁ゲートバイポーラトランジスタ | |
CN111192828B (zh) | 半导体结构及其形成方法 | |
EP3998638A1 (en) | Laterally diffused metal oxide semiconductor device and manufacturing method therefor | |
CN107180856B (zh) | 一种pmos器件结构 | |
CN115360239A (zh) | 一种屏蔽栅功率vdmos器件及其制造方法 | |
CN116469937A (zh) | 一种具有l型漏极的鳍式ldmos器件 | |
KR20150056433A (ko) | 전력 반도체 소자 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17814706 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20187036722 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2018566861 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2017814706 Country of ref document: EP Effective date: 20190121 |