JP2019512414A - 3次元物体を製造する方法 - Google Patents
3次元物体を製造する方法 Download PDFInfo
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- JP2019512414A JP2019512414A JP2018551360A JP2018551360A JP2019512414A JP 2019512414 A JP2019512414 A JP 2019512414A JP 2018551360 A JP2018551360 A JP 2018551360A JP 2018551360 A JP2018551360 A JP 2018551360A JP 2019512414 A JP2019512414 A JP 2019512414A
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- polyamide
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 129
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000004952 Polyamide Substances 0.000 claims abstract description 49
- 229920002647 polyamide Polymers 0.000 claims abstract description 49
- 239000000654 additive Substances 0.000 claims abstract description 39
- 230000000996 additive effect Effects 0.000 claims abstract description 34
- 230000008018 melting Effects 0.000 claims abstract description 28
- 238000002844 melting Methods 0.000 claims abstract description 28
- 238000010521 absorption reaction Methods 0.000 claims abstract description 15
- 238000001125 extrusion Methods 0.000 claims abstract description 12
- 229920006114 semi-crystalline semi-aromatic polyamide Polymers 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims description 52
- 239000002253 acid Substances 0.000 claims description 48
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 40
- 150000001412 amines Chemical class 0.000 claims description 37
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 35
- 150000003839 salts Chemical class 0.000 claims description 30
- -1 2,5-dihydroxyterephthalic acid 4,6-Dihydroxyisophthalic acid Chemical compound 0.000 claims description 25
- 238000007639 printing Methods 0.000 claims description 23
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 20
- 229920000642 polymer Polymers 0.000 claims description 20
- 239000001361 adipic acid Substances 0.000 claims description 17
- 235000011037 adipic acid Nutrition 0.000 claims description 17
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 17
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 13
- 229920002530 polyetherether ketone Polymers 0.000 claims description 13
- 150000004985 diamines Chemical class 0.000 claims description 12
- 229910052700 potassium Inorganic materials 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 229920002302 Nylon 6,6 Polymers 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 238000006068 polycondensation reaction Methods 0.000 claims description 9
- 229920003169 water-soluble polymer Polymers 0.000 claims description 9
- CARJPEPCULYFFP-UHFFFAOYSA-N 5-Sulfo-1,3-benzenedicarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(S(O)(=O)=O)=C1 CARJPEPCULYFFP-UHFFFAOYSA-N 0.000 claims description 8
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 8
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 8
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 claims description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims description 7
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 claims description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 6
- 239000000047 product Substances 0.000 claims description 6
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229920000491 Polyphenylsulfone Polymers 0.000 claims description 5
- 150000001413 amino acids Chemical class 0.000 claims description 5
- 150000003951 lactams Chemical class 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229920002492 poly(sulfone) Polymers 0.000 claims description 5
- 229920006393 polyether sulfone Polymers 0.000 claims description 5
- 229920001223 polyethylene glycol Polymers 0.000 claims description 5
- CDOWNLMZVKJRSC-UHFFFAOYSA-N 2-hydroxyterephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(O)=C1 CDOWNLMZVKJRSC-UHFFFAOYSA-N 0.000 claims description 4
- BCEQKAQCUWUNML-UHFFFAOYSA-N 4-hydroxybenzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC=C(O)C(C(O)=O)=C1 BCEQKAQCUWUNML-UHFFFAOYSA-N 0.000 claims description 4
- QNVNLUSHGRBCLO-UHFFFAOYSA-N 5-hydroxybenzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC(O)=CC(C(O)=O)=C1 QNVNLUSHGRBCLO-UHFFFAOYSA-N 0.000 claims description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 4
- 125000003368 amide group Chemical group 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000003010 ionic group Chemical group 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 4
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 claims description 3
- 239000005700 Putrescine Substances 0.000 claims description 3
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 claims description 3
- 125000002723 alicyclic group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 claims description 3
- 239000012943 hotmelt Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000008188 pellet Substances 0.000 claims description 3
- 229920006260 polyaryletherketone Polymers 0.000 claims description 3
- 229920001601 polyetherimide Polymers 0.000 claims description 3
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims description 2
- RAADBCJYJHQQBI-UHFFFAOYSA-N 2-sulfoterephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(S(O)(=O)=O)=C1 RAADBCJYJHQQBI-UHFFFAOYSA-N 0.000 claims description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 2
- 229920003189 Nylon 4,6 Polymers 0.000 claims description 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims description 2
- 229920000805 Polyaspartic acid Polymers 0.000 claims description 2
- 239000004697 Polyetherimide Substances 0.000 claims description 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 229920003235 aromatic polyamide Polymers 0.000 claims description 2
- 238000009833 condensation Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims description 2
- 239000007859 condensation product Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 150000002430 hydrocarbons Chemical group 0.000 claims description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 claims description 2
- 238000006386 neutralization reaction Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 2
- 108010064470 polyaspartate Proteins 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 239000011970 polystyrene sulfonate Substances 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229920006012 semi-aromatic polyamide Polymers 0.000 claims description 2
- 230000007928 solubilization Effects 0.000 claims description 2
- 238000005063 solubilization Methods 0.000 claims description 2
- 238000006277 sulfonation reaction Methods 0.000 claims description 2
- 150000003457 sulfones Chemical class 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims 2
- 229920001634 Copolyester Polymers 0.000 claims 1
- 239000004962 Polyamide-imide Substances 0.000 claims 1
- 229920006121 Polyxylylene adipamide Polymers 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 229920002312 polyamide-imide Polymers 0.000 claims 1
- 238000007654 immersion Methods 0.000 abstract description 11
- 238000000110 selective laser sintering Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 150000007513 acids Chemical class 0.000 description 9
- 239000011734 sodium Substances 0.000 description 8
- 229920000954 Polyglycolide Polymers 0.000 description 7
- 125000002843 carboxylic acid group Chemical group 0.000 description 7
- 239000004633 polyglycolic acid Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- IWBOPFCKHIJFMS-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl) ether Chemical compound NCCOCCOCCN IWBOPFCKHIJFMS-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- JHWNWJKBPDFINM-UHFFFAOYSA-N Laurolactam Chemical compound O=C1CCCCCCCCCCCN1 JHWNWJKBPDFINM-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
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- 239000004954 Polyphthalamide Substances 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
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- 229920006128 poly(nonamethylene terephthalamide) Polymers 0.000 description 3
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- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 2
- PBLZLIFKVPJDCO-UHFFFAOYSA-N 12-aminododecanoic acid Chemical compound NCCCCCCCCCCCC(O)=O PBLZLIFKVPJDCO-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
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- 238000007792 addition Methods 0.000 description 2
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- 239000007864 aqueous solution Substances 0.000 description 2
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- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical class [*:2]C([*:1])=O 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
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- 238000000151 deposition Methods 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N diethylenediamine Natural products C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
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- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 2
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- ZUBZATZOEPUUQF-UHFFFAOYSA-N isononane Chemical compound CCCCCCC(C)C ZUBZATZOEPUUQF-UHFFFAOYSA-N 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
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- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- BNJOQKFENDDGSC-UHFFFAOYSA-N octadecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCCC(O)=O BNJOQKFENDDGSC-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
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- 239000000243 solution Substances 0.000 description 2
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- 125000002813 thiocarbonyl group Chemical class *C(*)=S 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
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- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
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- YDBHSDRXUCPTQQ-UHFFFAOYSA-N 1-methylcyclohexan-1-amine Chemical compound CC1(N)CCCCC1 YDBHSDRXUCPTQQ-UHFFFAOYSA-N 0.000 description 1
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- XAUQWYHSQICPAZ-UHFFFAOYSA-N 10-amino-decanoic acid Chemical compound NCCCCCCCCCC(O)=O XAUQWYHSQICPAZ-UHFFFAOYSA-N 0.000 description 1
- GUOSQNAUYHMCRU-UHFFFAOYSA-N 11-Aminoundecanoic acid Chemical compound NCCCCCCCCCCC(O)=O GUOSQNAUYHMCRU-UHFFFAOYSA-N 0.000 description 1
- UUFJCZCYDCAHAH-UHFFFAOYSA-N 1h-naphthalene-2,2-dicarboxylic acid Chemical compound C1=CC=C2C=CC(C(=O)O)(C(O)=O)CC2=C1 UUFJCZCYDCAHAH-UHFFFAOYSA-N 0.000 description 1
- JCUZDQXWVYNXHD-UHFFFAOYSA-N 2,2,4-trimethylhexane-1,6-diamine Chemical compound NCCC(C)CC(C)(C)CN JCUZDQXWVYNXHD-UHFFFAOYSA-N 0.000 description 1
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- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- OJLGWNFZMTVNCX-UHFFFAOYSA-N dioxido(dioxo)tungsten;zirconium(4+) Chemical compound [Zr+4].[O-][W]([O-])(=O)=O.[O-][W]([O-])(=O)=O OJLGWNFZMTVNCX-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 1
- JVQUBHIPPUVHCN-UHFFFAOYSA-N hexane-1,2-diamine Chemical compound CCCCC(N)CN JVQUBHIPPUVHCN-UHFFFAOYSA-N 0.000 description 1
- HYQBVSXBLGKEDT-UHFFFAOYSA-N hexane-1,4-diamine Chemical compound CCC(N)CCCN HYQBVSXBLGKEDT-UHFFFAOYSA-N 0.000 description 1
- BBPXVYVXKAYBSS-UHFFFAOYSA-N hexane-2,5-diamine Chemical compound CC(N)CCC(C)N BBPXVYVXKAYBSS-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- LVPMIMZXDYBCDF-UHFFFAOYSA-N isocinchomeronic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)N=C1 LVPMIMZXDYBCDF-UHFFFAOYSA-N 0.000 description 1
- QZUPTXGVPYNUIT-UHFFFAOYSA-N isophthalamide Chemical compound NC(=O)C1=CC=CC(C(N)=O)=C1 QZUPTXGVPYNUIT-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- MJIVRKPEXXHNJT-UHFFFAOYSA-N lutidinic acid Chemical compound OC(=O)C1=CC=NC(C(O)=O)=C1 MJIVRKPEXXHNJT-UHFFFAOYSA-N 0.000 description 1
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- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
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- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 1
- HRRDCWDFRIJIQZ-UHFFFAOYSA-N naphthalene-1,8-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=CC2=C1 HRRDCWDFRIJIQZ-UHFFFAOYSA-N 0.000 description 1
- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 1
- WPUMVKJOWWJPRK-UHFFFAOYSA-N naphthalene-2,7-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=CC2=CC(C(=O)O)=CC=C21 WPUMVKJOWWJPRK-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
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- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 229920000867 polyelectrolyte Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
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- 238000011084 recovery Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- 229910052623 talc Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- BPSKTAWBYDTMAN-UHFFFAOYSA-N tridecane-1,13-diamine Chemical compound NCCCCCCCCCCCCCN BPSKTAWBYDTMAN-UHFFFAOYSA-N 0.000 description 1
- DXNCZXXFRKPEPY-UHFFFAOYSA-N tridecanedioic acid Chemical compound OC(=O)CCCCCCCCCCCC(O)=O DXNCZXXFRKPEPY-UHFFFAOYSA-N 0.000 description 1
- KLNPWTHGTVSSEU-UHFFFAOYSA-N undecane-1,11-diamine Chemical compound NCCCCCCCCCCCN KLNPWTHGTVSSEU-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
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- 239000002351 wastewater Substances 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
- B29C64/118—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using filamentary material being melted, e.g. fused deposition modelling [FDM]
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
- B01D67/0002—Organic membrane manufacture
- B01D67/0004—Organic membrane manufacture by agglomeration of particles
- B01D67/00045—Organic membrane manufacture by agglomeration of particles by additive layer techniques, e.g. selective laser sintering [SLS], selective laser melting [SLM] or 3D printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
- B01D67/0039—Inorganic membrane manufacture
- B01D67/0041—Inorganic membrane manufacture by agglomeration of particles in the dry state
- B01D67/00415—Inorganic membrane manufacture by agglomeration of particles in the dry state by additive layer techniques, e.g. selective laser sintering [SLS], selective laser melting [SLM] or 3D printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
- B05D5/083—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface involving the use of fluoropolymers
-
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- B29K2995/0037—Other properties
- B29K2995/004—Semi-crystalline
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0037—Other properties
- B29K2995/0059—Degradable
- B29K2995/0062—Degradable water-soluble
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70416—2.5D lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G2215/00—Apparatus for electrophotographic processes
- G03G2215/20—Details of the fixing device or porcess
- G03G2215/2003—Structural features of the fixing device
- G03G2215/2048—Surface layer material
- G03G2215/2054—Inorganic filler, e.g. silica powder
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/49—Nc machine tool, till multiple
- G05B2219/49023—3-D printing, layer of powder, add drops of binder in layer, new powder
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/49—Nc machine tool, till multiple
- G05B2219/49246—3-D printing, layer of powder, add drops of binder in layer, new powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/015—Fluoropolymer, e.g. polytetrafluoroethylene [PTFE]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
- Y10T156/1702—For plural parts or plural areas of single part
- Y10T156/1712—Indefinite or running length work
- Y10T156/1722—Means applying fluent adhesive or adhesive activator material between layers
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Abstract
Description
本願は、2016年4月1日出願の米国仮特許出願第62/316,835号に対する優先権を主張し、この出願の全内容は、あらゆる目的のために参照により本明細書に組み込まれる。
(PEO)のポリ(2−エチル−2−オキサゾリン)材料の使用が開示されている。これらのPEO材料は、ポリエチレングリコール可塑剤とコンパウンドされ得、可塑化された配合物は、場合により特にポリアミドと35重量%を超えない量でさらに配合され、前記ポリアミドは、場合により、ナイロン12、ならびにテレフタル酸、イソフタルアミドおよびヘキサメチレンジアミンの非晶質コポリマー、非晶質ナイロン6/ナイロン12コポリマーなどである。
−NH−R1−C(O)− (I)
−NH−R2−NH−C(O)−R3−C(O)− (II)
(式中、R1、R2、R3は、互いに等しいかまたは異なり、二価炭化水素鎖であり、かつ脂肪族、脂環式(alicyclic)、脂環式(cycloaliphatic)、芳香族またはそれらの組合せであり得、R1、R2、R3は、O、N、S、Pからなる群から選択される1個または2個以上のヘテロ原子を含有し得る)
のいずれかの繰り返し単位から本質的に構成されるポリマーを表すために本明細書によって使用される。
− 少なくとも二酸[酸(DA)](またはその誘導体)と少なくともジアミン[アミン(NN)](またはその誘導体)とを含む混合物(M1)、
− 少なくともラクタム[ラクタム(L)]を含む混合物(M2)、
− 少なくともアミノカルボン酸[アミノ酸(AN)]を含む混合物(M3)、および
− それらの組合せ
から選択される少なくとも1種の混合物の縮合生成物である。
(ここで、x,およびzは、ゼロまたは整数であり、yは、整数であり、但し、x+y+zは、1〜15の整数である);
(ここで、qは、1〜15の整数である);
(ここで、xのそれぞれは、互いに等しいかまたは異なり、1〜6の整数である);
(式中、R*およびR’*は、互いに等しいかまたは異なり、独立して、水素、C1〜C3アルキル基であり;Aは、アルキル、アルケニル、アルケネン、アルキレン−ヘテロ−アルキレン、アルキレン−ヘテロシクロ−アルキレン、アルキレン、アルキレン−オキシ−アルキレン、1,4−アルキル置換ピペラジン、カルボニル、チオカルボニルであり;Bは、アルキル、アルケニル、アルケネン、アルキレン−ヘテローアルキレン、アルキレン−ヘテロシクロ−アルキレン、アルキレン、アルキレン−オキシ−アルキレン、1,4−アルキル置換ピペラジン、カルボニル、チオカルボニルであり;R2は、水素、アルキル、アミノアルキル、アルキル−アミノ−アルキル、シクロアルキル、ヘテロシクロアルキル、アルケニル、アリール、またはヘテロアリールであり;この構造式に適合するアミンは、特に国際公開第2013/007128号パンフレット(ADESSO ADVANCED MATERIALS WUXI CO.LTD.)2013年1月17日に開示されている)
のいずれかのアミン(NNE)である。
(a)1,6−ジアミノヘキサンとアジピン酸との混合物であって、すなわち、得られる重縮合生成物は、ポリアミド66である、混合物、
(b)1,4−ジアミノブタンとアジピン酸との混合物であって、すなわち、得られる重縮合生成物は、ポリアミド46である、混合物、
(c)1,5−ジアミノペンタンとアジピン酸との混合物であって、すなわち、得られる重縮合生成物は、ポリアミド56である、混合物、
(d)アジピン酸、テレフタル酸および1,6−ジアミノヘキサンの混合物であって、テレフタル酸の量は、酸(DA)のモルに対して少なくとも25モル%のものである、混合物、
(e)テレフタル酸、イソフタル酸および1,6−ジアミノヘキサンの混合物であって、テレフタル酸の量は、酸(DA)のモルに対して少なくとも55モル%のものである、混合物、
(f)アジピン酸、テレフタル酸、イソフタル酸および1,6−ジアミノヘキサンの混合物であって、テレフタル酸の量は、酸(DA)のモルに対して少なくとも55モル%のものである、混合物、
(g)テレフタル酸(場合により酸(DA)に対して微量のイソフタル酸および/またはアジピン酸をさらに含む)と、場合により上で詳述されたとおりの1種または2種以上の脂肪族ジアミンと組み合わせた、上で詳述されたとおりの少なくとも1種のアミン(NNE)との混合物、
(h)アジピン酸(場合により酸(DA)に対して微量のイソフタル酸および/またはテレフタル酸をさらに含む)と、場合により上で詳述されたとおりの1種または2種以上の脂肪族アルキレンジアミンと組み合わせた、上で詳述されたとおりの少なくとも1種のアミン(NNE)との混合物、
(i)アジピン酸、および全酸(DA)モルの最大で15モル%、好ましくは最大で10モル%、より好ましくは最大で5モル%に相当する、上に記載されたとおりの少なくとも1種の酸(IDA)(好ましくは5−スルホ−イソフタル酸またはその塩)と、1,6−ジアミノヘキサンとの混合物、
(j)テレフタル酸、および全酸(DA)モルの最大で15モル%、好ましくは最大で10モル%、より好ましくは最大で5モル%に相当する、上に記載されたとおりの少なくとも1種の酸(IDA)(好ましくは5−スルホ−イソフタル酸またはその塩)と、1,6−ジアミノヘキサンとの混合物、
(k)1,4−シクロヘキサンジカルボン酸(シス、トランスまたはシス/トランス混合物)と、場合により上で詳述されたとおりの1種または2種以上の脂肪族ジアミンと組み合わせた、上で詳述されたとおりの少なくとも1種のアミン(NNE)との混合物、
(l)1,4−シクロヘキサンジカルボン酸(シス、トランスまたはシス/トランス混合物)、および全酸(DA)モルの最大で15モル%、好ましくは最大で10モル%、より好ましくは最大で5モル%に相当する、上で詳述されたとおりの少なくとも1種の酸(IDA)(好ましくは5−スルホ−イソフタル酸またはその塩)と、場合により上で詳述されたとおりの1種または2種以上の脂肪族ジアミンと組み合わせた、上で詳述されたとおりの少なくとも1種のアミン(NNE)との混合物
から選択される。
(式中、W前は、その元の乾燥状態での造形試験片の重量であり、およびW後は、水吸収後の造形試験片の重量である)
に従って計算された。
− 55〜100重量%の、上で詳述されたとおりのポリアミド(A)、
− 0〜30重量%の、上で詳述されたとおりの水溶性ポリマー添加剤、および
− 0〜30重量%の他の添加剤
からなる。
− 75〜100重量%の、上で詳述されたとおりのポリアミド(A)、
− 0〜20重量%の、上で詳述されたとおりの水溶性ポリマー添加剤、および
− 0〜20重量%の、上で詳述されたとおりの他の添加剤
からなる。
a)吐出チップで終わっている通し穴および通し穴内の材料を溶融するための周囲ヒータを有する吐出ヘッド部材に支持材料を供給する工程と、
b)前記通し穴内で支持材料をピストン、例えばピストンとして作用する未溶融フィラメントで圧縮し、一方で同時に支持材料を吐出ヘッド部材内で溶融して、吐出チップから支持材料のリボンを押し出す工程と、
c)吐出チップおよび受入れプレットフォームのxおよびy方向の相対移動を確保し、一方で前記受入れプラットフォーム上に支持材料を吐出して、犠牲支持構造の断面形状を形成する工程と、
d)吐出チップおよび受入れプラットフォームのz方向の相対移動を確保し、一方で前記受入れプラットフォーム上に支持材料を吐出して、高さにおいて犠牲支持構造を形成する工程と
を含む。
a’)吐出チップで終わっている通し穴および通し穴内の材料を溶融するための周囲ヒータを有する吐出ヘッド部材に部品材料を供給する工程と、
b’)前記通し穴において部品材料をピストン、例えばピストンとして作用する未溶融フィラメントで圧縮し、一方で同時に部品材料を吐出ヘッド部材内で溶融して、吐出チップから部品材料のリボンを押し出す工程と、
c)吐出チップおよび犠牲支持構造を支持する受入れプラットフォームのxおよびy方向の相対移動を確保し、一方で前記受入れプラットフォームおよび前記犠牲支持構造上に支持材料を吐出して、3次元物体の断面形状を形成する工程と、
d)吐出チップおよび受入れプラットフォームのz方向の相対移動を確保し、一方で前記受入れプラットフォームおよび前記犠牲支持構造上に部品材料を吐出して、高さにおいて3次元物体を形成する工程と
をさらに含む。
A1.23℃での水中浸漬による0.1重量%の飽和での水吸収率を有する、CelaneseからのTm=285℃を有するポリフェニレンスルフィド(PPS)Fortron(R)0317。
B1.Sigma−Aldrichで購入したポリビニルピロリドン(PVP)1,300kDa。
支持材料試験形状をいくつかの異なる方法により調製した。
ポリエーテルエーテルケトン(PEEK)KetaSpire(R)KT−880(Tm=340℃)は、0.8mm直径のダイを有し、400℃(バレル温度)で加熱された垂直押出機を10mm/秒の速度で使用して生成させた。ダイの出口において、PEEK高温フィラメントをダイから1mmの間の距離に置かれたフィルム/プラークと接触状態で置かれ、約0.25平方インチの表面積を有する単層フィルムを調製する。印刷プロセスの終了後、試料を室温に放置して冷却する。
0.支持材料表面は、部品材料印刷中に表面で完全に溶けた。
1.支持材料表面は溶けず、何らの変形証拠も示さず、相当の凝集力が支持材料表面を部品材料に接着させ、その結果、脱離は、支持材料と部品材料との一体性の破壊/低下を引き起こし、支持材料の残物は、部品材料に接着し、逆も同様であった。
2.支持材料表面は溶けず、何らの変形証拠も示さず、支持材料表面と印刷された材料との間の有意な接着はなく、その結果、支持材料と部品材料とは、実質的に有意な脱離力をまったく使用せずに分離させることができる。脱離は、部品材料上での支持材料の残物がまったくない完全な分離をもたらし、逆も同様である。
撹拌機、圧力解放弁および凝縮器を備えた反応器に9g(0.054モル)のテレフタル酸、8g(0.054モル)の2,2’−(エチレンジオキシ)ビス(エチルアミン)、0.0052gのH3PO3および11gの脱イオン水を導入した。反応器を密封し、圧力解放弁を20バールに設定し、反応混合物を1時間以内に335℃に加熱した。反応混合物を335℃で15分間維持し、次いで1時間以内に200℃、次いで室温まで冷却した。反応器から圧力を解放した後、反応器を開け、固体ポリマーを取り出し、DSCにより分析した。融点は、256℃に等しいことがわかり、溶融エンタルピーは、29J/gであることがわかった。このポリマーを大気圧で90℃において50/50重量/重量の混合物水/エタノール中に置き、3時間の曝露後に少なくとも部分的な溶解を受けることがわかった(水性アルコール溶液は濁っていた)。その高い融点およびその水性アルコール中の溶解を考慮すると、このポリアミドは、本発明の支持材料でポリアミド(A)として使用されるのに特に適する。水溶解性は、複雑な幾何形状および/またはアンダーカットを有する部品の構築にとって特に興味深く、その結果、支持材料は、溶解による以外には除去できない。
撹拌機および凝縮器を備えた反応器に9.08g(0.053モル)の1,4−シクロヘキサンジカルボン酸、7.86g(0.053モル)の2,2’−(エチレンジオキシ)ビス(エチルアミン)、0.0052gのH3PO3および11gの脱イオン水を導入した。反応器を密封し、圧力解放弁を20バールに設定し、反応混合物を1時間以内に335℃に加熱した。反応混合物を335℃に15分間維持し、次いで1時間以内に200℃、次いで室温まで冷却した。反応器から圧力を解放した後、反応器を開け、固体ポリマーを回収し、DSCにより分析した。融点は、302℃に等しいことがわかり、溶融エンタルピーは、20J/gであることがわかった。このポリマーを大気圧で90℃において50/50重量/重量の混合物中に置き、2時間のみの曝露後に完全に溶解させた(水性アルコール溶液は濁っていた)。その高い融点およびその水性アルコール中の溶解を考慮すると、このポリアミドは、本発明の支持材料中のポリアミド(A)として使用されるのに特に適する。水溶解性は、複雑な幾何形状および/またはアンダーカットを有する部品の構築にとって特に興味深く、その結果、支持材料は、溶解による以外には除去できない。
Claims (15)
- 3次元物体を付加製造システムで製造する方法であって、
− ASTM D3418に従って決定されて少なくとも250℃の融点を有し、かつ23℃での水中浸漬によって少なくとも2重量%の飽和での水吸収率を有する50重量%超の半結晶性ポリアミド[ポリアミド(A)]を含む支持材料を提供する工程と、
− 部品材料を提供する工程と、
− 前記提供された支持材料から支持構造の層を印刷し、かつ前記支持構造の前記層の前記印刷と連携して、前記提供された部品材料から前記3次元物体の層を印刷する工程であって、前記支持構造の前記印刷された層の少なくとも一部は、前記3次元物体の前記印刷された層を支持する、工程と、
− 前記3次元物体から前記支持構造の少なくとも一部を除去して、前記3次元物体を得る工程と
を含む方法。 - 前記ポリアミド(A)は、式:
−NH−R1−C(O)− (I)
−NH−R2−NH−C(O)−R3−C(O)− (II)
(式中、R1、R2、R3は、互いに等しいかまたは異なり、二価炭化水素鎖であり、かつ脂肪族、脂環式、脂環式、芳香族またはそれらの組合せであり得、R1、R2、R3は、O、N、S、Pからなる群から選択される1個または2個以上のヘテロ原子を含有し得る)
のいずれかに適合し、前記ポリアミド(A)の繰り返し単位(I)および(II)は、有利には8未満である、1個のアミド基(−C(O)NH−)当たりの基R1またはR2およびR3中の炭素原子の数によって特徴付けられる、請求項1に記載の方法。 - 前記ポリアミド(A)は、
− 少なくとも二酸[酸(DA)](またはその誘導体)と少なくともジアミン[アミン(NN)](またはその誘導体)とを含む混合物(M1)、
− 少なくともラクタム[ラクタム(L)]を含む混合物(M2)、
− 少なくともアミノカルボン酸[アミノ酸(AN)]を含む混合物(M3)、および
− それらの組合せ
から選択される少なくとも1種の混合物の縮合生成物である、請求項1または2に記載の方法。 - 前記酸(DA)は、好ましくはフェノール性ヒドロキシル基、スルホン酸基(一般に芳香族スルホン酸基)、ホスホン酸基、オニウム基(ホスホニウムおよびアンモニウム基を含む)から選択される、イオン性基[酸(IDA)]を含む少なくとも1種の二酸を含み、および/または前記酸(DA)は、4−ヒドロキシイソフタル酸、5−ヒドロキシイソフタル酸、2−ヒドロキシテレフタル酸、2,5−ジヒドロキシテレフタル酸、4,6−ジヒドロキシイソフタル酸、5−スルホイソフタル酸(およびその塩、例えばLi、K、Na、Ag塩)、および2−スルホテレフタル酸(およびその塩、例えばLi、K、Na、Ag塩)の少なくとも1種を含む、請求項3に記載の方法。
- 前記アミン(NN)の少なくとも1種は、エーテル結合を含み[アミン(NNE)]、かつ好ましくは、式:−(OCH2−CHRJ)n−(ここで、RJは、HまたはC1〜C3アルキル基、好ましくは−CH3であり、およびnは、1〜15の整数である)の部分、および式:−O−C(R’J)(R’’J)−O−(ここで、R’JおよびR’’Jは、互いにおよび出現するごとに等しいかまたは異なり、HまたはC1〜C3アルキル基、好ましくは−CH3である)の部分を含むジアミンを含む、請求項3に記載の方法。
- 前記ポリアミド(A)は、
(a)1,6−ジアミノヘキサンとアジピン酸との混合物であって、すなわち、得られる重縮合生成物は、ポリアミド66である、混合物、
(b)1,4−ジアミノブタンとアジピン酸との混合物であって、すなわち、得られる重縮合生成物は、ポリアミド46である、混合物、
(c)1,5−ジアミノペンタンとアジピン酸との混合物であって、すなわち、得られる重縮合生成物は、ポリアミド56である、混合物、
(d)アジピン酸、テレフタル酸および1,6−ジアミノヘキサンの混合物であって、テレフタル酸の量は、前記酸(DA)のモルに対して少なくとも25モル%のものである、混合物、
(e)テレフタル酸、イソフタル酸および1,6−ジアミノヘキサンの混合物であって、テレフタル酸の量は、前記酸(DA)のモルに対して少なくとも55モル%のものである、混合物、
(f)アジピン酸、テレフタル酸、イソフタル酸および1,6−ジアミノヘキサンの混合物であって、テレフタル酸の量は、前記酸(DA)のモルに対して少なくとも55モル%のものである、混合物、
(g)テレフタル酸(場合により前記酸(DA)に対して微量のイソフタル酸および/またはアジピン酸をさらに含む)と、場合により1種または2種以上の脂肪族ジアミンと組み合わせた請求項5に記載の少なくとも1種のアミン(NNE)との混合物、
(h)アジピン酸(場合により前記酸(DA)に対して微量のイソフタル酸および/またはテレフタル酸をさらに含む)と、場合により1種または2種以上の脂肪族ジアミンと組み合わせた請求項5に記載の少なくとも1種のアミン(NNE)との混合物、
(i)アジピン酸、および全酸(DA)モルの最大で15モル%、好ましくは最大で10モル%、より好ましくは最大で5モル%に相当する請求項4に記載の少なくとも1種の酸(IDA)(好ましくは5−スルホ−イソフタル酸またはその塩)と、1,6−ジアミノヘキサンとの混合物、
(j)テレフタル酸、および全酸(DA)モルの最大で15モル%、好ましくは最大で10モル%、より好ましくは最大で5モル%に相当する請求項4に記載の少なくとも1種の酸(IDA)(好ましくは5−スルホ−イソフタル酸またはその塩)と、1,6−ジアミノヘキサンとの混合物、
(k)1,4−シクロヘキサンジカルボン酸(シス、トランスまたはシス/トランス混合物)と、場合により1種または2種以上の脂肪族ジアミンと組み合わせた請求項5に記載の少なくとも1種のアミン(NNE)との混合物、
(l)1,4−シクロヘキサンジカルボン酸(シス、トランスまたはシス/トランス混合物)、および全酸(DA)モルの最大で15モル%、好ましくは最大で10モル%、より好ましくは最大で5モル%に相当する請求項4に記載の少なくとも1種の酸(IDA)(好ましくは5−スルホ−イソフタル酸またはその塩)と、場合により1種または2種以上の脂肪族ジアミンと組み合わせた請求項5に記載の少なくとも1種のアミン(NNE)との混合物
からなる群から選択される混合物(M1)の重縮合によって得られる、請求項3に記載の方法。 - 前記支持材料は、一般にポリエチレングリコール(PEG)ポリマー;ポリビニルピロリドン(PVP)ポリマー;ポリメチレンナフタレンスルホネート(ナフタレンのスルホン化、ホルムアルデヒドとの縮合、および中和によって得られる)ポリマー;ポリスチレンスルホネートおよびスチレン−コ−スチレンスルホネートのコポリマーを含む、−SO3Xa基(ここで、Xaは、Hまたは金属、例えばNa、K、Liである)を有するスチレンスルホネートポリマー;スルホン化ポリスルホン、スルホン化ポリフェニルスルホン、スルホン化ポリエーテルスルホンを含む、−SO3Xa基(ここで、Xaは、Hまたは金属である)を有するスルホン化スルホンポリマー;ポリスクシンイミドおよび塩;ポリアスパラギン酸および塩;ポリ(メタ)アクリル酸および塩(例えば、Na、K、Li);ポリビニルスルホン酸および塩(例えば、Na、K、Li);ならびにポリビニルアルコールからなる群から選択される、ポリアミド(A)と異なる少なくとも1種の水溶性ポリマー添加剤を含む、請求項1〜6のいずれか一項に記載の方法。
- 前記支持材料は、前記支持材料の全重量に対して0.5重量%未満、好ましくは0.2重量%未満の水分含量を有して乾燥状態で提供される、請求項1〜7のいずれか一項に記載の方法。
- 前記部品材料は、ポリスルホン、ポリエーテルスルホン、ポリフェニルスルホン、ポリエーテルエーテルケトンを含むポリアリールエーテルケトン、ポリエーテルイミド、ポリアミドイミド、ポリフェニレンスルフィド、ポリフェニレン、液晶ポリマー、ポリカーボネート、特にメタキシリレンジアミンアジペート(MXD6)を含む芳香族および半芳香族ポリアミドからなる群から選択される、請求項1〜8のいずれか一項に記載の方法。
- 他に熱溶解積層法としても知られる、押出ベース付加製造システムによって3次元物体を製造する方法である、請求項1〜9のいずれか一項に記載の方法。
- 前記提供された支持材料から犠牲支持構造の層を印刷する前記工程は、
a)吐出チップで終わっている通し穴および前記通し穴内の前記材料を溶融するための周囲ヒータを有する吐出ヘッド部材に前記支持材料を供給する工程と、
b)前記通し穴内で前記支持材料をピストン、例えばピストンとして作用する未溶融フィラメントで圧縮し、一方で同時に前記支持材料を前記吐出ヘッド部材内で溶融して、前記吐出チップから支持材料のリボンを押し出す工程と、
c)前記吐出チップおよび受入れプレットフォームのxおよびy方向の相対移動を確保し、一方で前記受入れプラットフォーム上に支持材料を吐出して、前記犠牲支持構造の断面形状を形成する工程と、
d)前記吐出チップおよび前記受入れプラットフォームのz方向の相対移動を確保し、一方で前記受入れプラットフォーム上に支持材料を吐出して、高さにおいて前記犠牲支持構造を形成する工程と
を含む、請求項10に記載の方法。 - 前記犠牲構造の前記層の前記印刷と連携して、前記提供された部品材料から前記3次元物体の層を印刷する前記工程は、有利には、
a’)吐出チップで終わっている通し穴および前記通し穴内の前記材料を溶融するための周囲ヒータを有する吐出ヘッド部材に前記部品材料を供給する工程と、
b’)前記通し穴内で前記部品材料をピストン、例えばピストンとして作用する未溶融フィラメントで圧縮し、一方で同時に前記部品材料を前記吐出ヘッド部材内で溶融して、前記吐出チップから部品材料のリボンを押し出す工程と、
c)前記吐出チップおよび前記犠牲支持構造を支持する前記受入れプレットフォームのxおよびy方向の相対移動を確保し、一方で前記受入れプラットフォームおよび前記犠牲支持構造上に支持材料を吐出して、前記3次元物体の断面形状を形成する工程と、
d)前記吐出チップおよび前記受入れプラットフォームのz方向の相対移動を確保し、一方で前記受入れプラットフォームおよび前記犠牲支持構造上に部品材料を吐出して、高さにおいて前記3次元物体を形成する工程と
をさらに含む、請求項11に記載の方法。 - (iv)アセンブリを水蒸気および/または水に曝露することを伴う、前記アセンブリから前記犠牲支持構造の少なくとも一部を除去して、前記3次元物体を得る工程を含む、請求項1〜12のいずれか一項に記載の方法。
- 工程(iv)は、前記アセンブリを、曝露の温度で少なくとも70%、好ましくは少なくとも80%、好ましくは少なくとも85%の相対湿度(RH)を有する空気に曝露する工程を含むか、または工程(iv)は、前記アセンブリを液体水と/液体水中に接触/浸漬させる工程を含む、請求項13に記載の方法。
- 前記犠牲支持構造は、前記アセンブリから除去され、前記犠牲支持構造は、前記3次元物体から脱離され、かつその固体形態でまたは少なくとも部分的可溶化によって除去される、請求項1〜14のいずれか一項に記載の方法。
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EP3436503A1 (en) | 2019-02-06 |
EP3436503B2 (en) | 2023-10-25 |
WO2017167691A1 (en) | 2017-10-05 |
US11911954B2 (en) | 2024-02-27 |
US20200324457A1 (en) | 2020-10-15 |
CN109071802A (zh) | 2018-12-21 |
JP6954919B2 (ja) | 2021-10-27 |
EP3436503B1 (en) | 2020-02-19 |
CN109071802B (zh) | 2021-07-13 |
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