JP2019220643A - 赤外線検出器 - Google Patents
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- 239000002096 quantum dot Substances 0.000 claims abstract description 90
- 230000004888 barrier function Effects 0.000 claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims description 43
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 24
- 230000004913 activation Effects 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 238000011895 specific detection Methods 0.000 abstract description 11
- 239000004020 conductor Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 description 62
- 239000000463 material Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000009736 wetting Methods 0.000 description 9
- 238000001451 molecular beam epitaxy Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
この発明の実施の形態によれば、赤外線センサは、第1のコンタクト層と、第2のコンタクト層と、光電変換層とを備える。光電変換層は、第1のコンタクト層と第2のコンタクト層との間に第1および第2のコンタクト層に接して配置され、かつ、不純物がドーピングされる。そして、光電変換層は、量子層と、障壁層と、バリア層とを含む。バリア層は、障壁層と第2のコンタクト層との間に障壁層および第2のコンタクト層に接して配置され、かつ、障壁層よりも大きいバンドギャップを有する。また、バリア層の伝導帯下端と第2のコンタクト層の伝導帯下端とのエネルギーレベル差をyとし、光電変換層に印加される電圧をz(V)とし、光電変換層の厚みをd(nm)としたとき、赤外線検出器は、y≧27×exp(0.64×z/(d×10000))を満たす。
構成1において、赤外線検出器は、y≧27×exp(0.64×z/(d×10000))に代えてy≧38×exp(0.63×z/(d×10000))を満たす。
構成1において、赤外線検出器は、y≧27×exp(0.64×z/(d×10000))に代えてy≧52×exp(0.63×z/(d×10000))を満たす。
構成1において、赤外線検出器は、y≧27×exp(0.64×z/(d×10000))に代えてy≧45×exp(0.63×z/(d×10000))を満たす。
構成1において、赤外線検出器は、y≧27×exp(0.64×z/(d×10000))に代えてy≧63×exp(0.62×z/(d×10000))を満たす。
構成1から構成5のいずれかにおいて、光電変換層は、伝導帯間吸収によって赤外線を吸収する。
構成1から構成6のいずれかにおいて、量子層は、量子ドットを含む。
構成1から構成7のいずれかにおいて、電圧z(V)は、第2のコンタクト層が負バイアスになるように光電変換層に印加される。
構成1から構成8のいずれかにおいて、第1および第2のコンタクト層の各々は、n型GaAsである。
構成1から構成9のいずれかにおいて、バリア層は、(Ga0.51In0.49P)1−x(Al0.52In0.48P)x(0.4<x≦1)である。
構成1から構成9のいずれかにおいて、バリア層は、AlAsである。
構成1から構成11のいずれかにおいて、電圧z(V)は、光電変換層において電界に対する活性化エネルギーの変化が指数関数領域となるように光電変換層に印加される。
Claims (12)
- 第1のコンタクト層と、
第2のコンタクト層と、
前記第1のコンタクト層と前記第2のコンタクト層との間に前記第1および第2のコンタクト層に接して配置され、かつ、不純物がドーピングされた光電変換層とを備え、
前記光電変換層は、
量子層と、
障壁層と、
前記障壁層と前記第2のコンタクト層との間に前記障壁層および前記第2のコンタクト層に接して配置され、かつ、前記障壁層よりも大きいバンドギャップを有するバリア層とを含み、
前記バリア層の伝導帯下端と前記第2のコンタクト層の伝導帯下端とのエネルギーレベル差をyとし、前記光電変換層に印加される電圧をz(V)とし、前記光電変換層の厚みをd(nm)としたとき、y≧27×exp(0.64×z/(d×10000))を満たす、赤外線検出器。 - 前記y≧27×exp(0.64×z/(d×10000))に代えてy≧38×exp(0.63×z/(d×10000))を満たす、請求項1に記載の赤外線検出器。
- 前記y≧27×exp(0.64×z/(d×10000))に代えてy≧52×exp(0.63×z/(d×10000))を満たす、請求項1に記載の赤外線検出器。
- 前記y≧27×exp(0.64×z/(d×10000))に代えてy≧45×exp(0.63×z/(d×10000))を満たす、請求項1に記載の赤外線検出器。
- 前記y≧27×exp(0.64×z/(d×10000))に代えてy≧63×exp(0.62×z/(d×10000))を満たす、請求項1に記載の赤外線検出器。
- 前記光電変換層は、伝導帯間吸収によって赤外線を吸収する、請求項1から請求項5のいずれか1項に記載の赤外線検出器。
- 前記量子層は、量子ドットを含む、請求項1から請求項6のいずれか1項に記載の赤外線検出器。
- 前記電圧z(V)は、前記第2のコンタクト層が負バイアスになるように前記光電変換層に印加される、請求項1から請求項7のいずれか1項に記載の赤外線検出器。
- 前記第1および第2のコンタクト層の各々は、n型GaAsである、請求項1から請求項8のいずれか1項に記載の赤外線検出器。
- 前記バリア層は、(Ga0.51In0.49P)1−x(Al0.52In0.48P)x(0.4<x≦1)である、請求項1から請求項9のいずれか1項に記載の赤外線検出器。
- 前記バリア層は、AlAsである、請求項1から請求項9のいずれか1項に記載の赤外線検出器。
- 前記電圧z(V)は、前記光電変換層において電界に対する活性化エネルギーの変化が指数関数領域となるように前記光電変換層に印加される、請求項1から請求項11のいずれか1項に記載の赤外線検出器。
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Citations (3)
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US20010028055A1 (en) * | 1998-05-05 | 2001-10-11 | Simon Fafard | Quantum dot infrared photodetector (QDIP) and methods of making the same |
JP2012109434A (ja) * | 2010-11-18 | 2012-06-07 | Technical Research & Development Institute Ministry Of Defence | 量子ドット型赤外線検知器及び赤外線イメージセンサ |
JP2014222709A (ja) * | 2013-05-13 | 2014-11-27 | 日本電気株式会社 | 量子ドット型赤外線検出器、赤外線検出装置、及び赤外線検出方法 |
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JP4571920B2 (ja) | 2006-03-14 | 2010-10-27 | 富士通株式会社 | 光検知器 |
US9748427B1 (en) * | 2012-11-01 | 2017-08-29 | Hrl Laboratories, Llc | MWIR photodetector with compound barrier with P-N junction |
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US20010028055A1 (en) * | 1998-05-05 | 2001-10-11 | Simon Fafard | Quantum dot infrared photodetector (QDIP) and methods of making the same |
JP2012109434A (ja) * | 2010-11-18 | 2012-06-07 | Technical Research & Development Institute Ministry Of Defence | 量子ドット型赤外線検知器及び赤外線イメージセンサ |
JP2014222709A (ja) * | 2013-05-13 | 2014-11-27 | 日本電気株式会社 | 量子ドット型赤外線検出器、赤外線検出装置、及び赤外線検出方法 |
Non-Patent Citations (2)
Title |
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CHAKRABARTI, S. ET AL.: "High-Temperature Operation of InAs-GaAs Quantum-Dot Infrared Photodetectors With Large Responsivity", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 16, no. 5, JPN6020015779, May 2004 (2004-05-01), pages 1361 - 1363, XP001212228, ISSN: 0004263905, DOI: 10.1109/LPT.2004.825974 * |
YE, ZHENGMAO ET AL.: "Normal-Incidence InAs Self-Assembled Quantum-Dot Infrared Photodetectors With a High Detectivity", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 38, no. 9, JPN6020015780, September 2002 (2002-09-01), pages 1234 - 1237, XP011065278, ISSN: 0004263906 * |
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