JP2019197856A - エッチング方法およびエッチング装置 - Google Patents
エッチング方法およびエッチング装置 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 184
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000012545 processing Methods 0.000 claims abstract description 94
- 238000001179 sorption measurement Methods 0.000 claims abstract description 38
- 239000002156 adsorbate Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 4
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 160
- 230000000052 comparative effect Effects 0.000 description 40
- 229910004298 SiO 2 Inorganic materials 0.000 description 35
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 30
- 238000010586 diagram Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- -1 Cl 2 Chemical compound 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910010041 TiAlC Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Abstract
Description
次に、実施形態に係るエッチング装置の構成について説明する。以下では、エッチングの対象の被処理体を半導体ウエハ(以下、ウエハという)とし、半導体ウエハに対してエッチング装置により原子層エッチングを行う場合を例に説明する。図1は、実施形態に係るエッチング装置の概略構成の一例を示す断面図である。エッチング装置100は、処理容器1と、載置台2と、シャワーヘッド3と、排気部4と、ガス供給機構5と、制御部6とを有している。実施形態では、シャワーヘッド3が供給部に対応する。
・吸着工程
圧力:15〜500mTorr
BCl3ガス流量:10〜200sccm
投入高周波電力:20〜200W
プロセス時間:10〜120sec
・エッチング工程
圧力:15〜500mTorr
Arガス流量:10〜500sccm
投入高周波電力:10〜200W
プロセス時間:5〜120sec
・吸着工程
圧力:15〜500mTorr
BCl3ガス流量:10〜200sccm
H2ガス流量:10〜200sccm
投入高周波電力:20〜200W
プロセス時間:10〜120sec
・エッチング工程
圧力:15〜500mTorr
Arガス流量:10〜500sccm
投入高周波電力:10〜200W
プロセス時間:5〜120sec
2 載置台
3 シャワーヘッド
4 排気部
5 ガス供給機構
6 制御部
38 処理空間
42 排気機構
44 第1高周波電源
46 第2高周波電源
100 エッチング装置
110 シリコン酸化膜
111 ビアホール
MD トレンチコンタクト
MG メタルゲート
S1 吸着工程
S2 エッチング工程
W ウエハ
Claims (10)
- エッチングの対象とされた被処理体が配置された処理空間にBCl3ガスを含んだ処理ガスとH2ガスとを供給し、前記H2ガスの供給を停止すると共に前記処理空間に所定周波数の電力を印加して前記処理空間にプラズマを生成して、前記処理ガスに基づく吸着物を前記被処理体に吸着させる吸着工程と、
前記処理空間に希ガスのプラズマを生成して前記吸着物を活性化して、前記被処理体をエッチングするエッチング工程と、
を有することを特徴とするエッチング方法。 - 前記吸着工程は、前記処理空間に前記所定周波数の電力を印加するまでに前記H2ガスの供給を停止する
ことを特徴とする請求項1に記載のエッチング方法。 - 前記吸着工程は、プラズマ励起のための安定化時間のみに前記H2ガスを供給する
ことを特徴とする請求項1または2に記載のエッチング方法。 - 前記被処理体は、シリコン酸化膜に、金属層に到達するビアホールが形成され、該金属層上に自然酸化膜が形成された半導体ウエハである
ことを特徴とする請求項1〜3の何れか1つに記載のエッチング方法。 - 前記吸着工程と前記エッチング工程とをパージ工程を挟んで、少なくとも1回以上繰り返すことを特徴とする請求項1〜4の何れか1つに記載のエッチング方法。
- 前記吸着工程の安定化時間に供給されるBCl3とH2のガス流量比は、1.15〜1.4であることを特徴とする請求項1〜5の何れか1つに記載のエッチング方法。
- 前記被処理体上に形成されたシリコン酸化膜と、金属層上に形成された金属酸化膜との選択比は、5以上であることを特徴とする請求項1〜6の何れか1つに記載のエッチング方法。
- 前記エッチング工程で供給する希ガスは、Arであることを特徴とする請求項1〜7の何れか1つに記載のエッチング方法。
- 前記吸着工程と前記エッチング工程で印加される電力は、上部および/または下部から印加されることを特徴とする請求項1〜8の何れか1つに記載のエッチング方法。
- エッチングの対象とされた被処理体が載置台に配置され、載置台上に処理空間を形成された処理容器と、
前記処理空間に、BCl3ガスを含んだ処理ガス、H2ガス、希ガスをそれぞれ供給する供給部と、
前記処理空間に所定周波数の電力を印加する電源部と、
前記被処理体をエッチングする際に、前記供給部から前記処理空間にBCl3ガスを含んだ処理ガスとH2ガスとを供給し、前記供給部からの前記H2ガスの供給を停止すると共に前記電源部から前記処理空間に前記所定周波数の電力を印加して前記処理空間にプラズマを生成して、前記処理ガスに基づく吸着物を前記被処理体に吸着させる吸着工程と、前記供給部から前記処理空間に希ガスのプラズマを生成して前記吸着物を活性化させ、前記被処理体をエッチングするエッチング工程と、を実施するよう制御する制御部と、
を有することを特徴とするエッチング装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2018092321A JP7133975B2 (ja) | 2018-05-11 | 2018-05-11 | エッチング方法およびエッチング装置 |
CN201910309894.5A CN110473782B (zh) | 2018-05-11 | 2019-04-17 | 蚀刻方法及蚀刻装置 |
KR1020190053139A KR102244396B1 (ko) | 2018-05-11 | 2019-05-07 | 에칭 방법 및 에칭 장치 |
US16/407,674 US10847379B2 (en) | 2018-05-11 | 2019-05-09 | Etching method and etching apparatus |
TW108115992A TWI805754B (zh) | 2018-05-11 | 2019-05-09 | 蝕刻方法及蝕刻裝置 |
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JP2018092321A JP7133975B2 (ja) | 2018-05-11 | 2018-05-11 | エッチング方法およびエッチング装置 |
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JP2019197856A true JP2019197856A (ja) | 2019-11-14 |
JP7133975B2 JP7133975B2 (ja) | 2022-09-09 |
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JP (1) | JP7133975B2 (ja) |
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CN (1) | CN110473782B (ja) |
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US11236424B2 (en) * | 2019-11-01 | 2022-02-01 | Applied Materials, Inc. | Process kit for improving edge film thickness uniformity on a substrate |
JP7174016B2 (ja) | 2020-07-16 | 2022-11-17 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014522104A (ja) * | 2011-07-20 | 2014-08-28 | ラム リサーチ コーポレーション | 不活性ガスから生成される準安定ガスを使用する原子層エッチング |
JP2015191922A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社東芝 | 半導体装置の製造方法 |
JP2016201476A (ja) * | 2015-04-10 | 2016-12-01 | 東京エレクトロン株式会社 | プラズマエッチング方法、パターン形成方法及びクリーニング方法 |
JP2016208027A (ja) * | 2015-04-24 | 2016-12-08 | ラム リサーチ コーポレーションLam Research Corporation | コバルトのエッチバック |
JP2017063186A (ja) * | 2015-08-19 | 2017-03-30 | ラム リサーチ コーポレーションLam Research Corporation | タングステンおよび他の金属の原子層エッチング |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7115511B2 (en) * | 2002-11-08 | 2006-10-03 | Epion Corporation | GCIB processing of integrated circuit interconnect structures |
CN1304631C (zh) * | 2004-08-18 | 2007-03-14 | 吉林大学 | 直流辉光等离子体化学气相沉积方法制备碳纳米管的工艺 |
KR100672684B1 (ko) * | 2005-12-28 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 커패시터 및 그의 제조방법 |
JP5461759B2 (ja) * | 2006-03-22 | 2014-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
US8435608B1 (en) * | 2008-06-27 | 2013-05-07 | Novellus Systems, Inc. | Methods of depositing smooth and conformal ashable hard mask films |
US8329575B2 (en) * | 2010-12-22 | 2012-12-11 | Applied Materials, Inc. | Fabrication of through-silicon vias on silicon wafers |
JP6063264B2 (ja) * | 2012-09-13 | 2017-01-18 | 東京エレクトロン株式会社 | 被処理基体を処理する方法、及びプラズマ処理装置 |
CN103219166A (zh) * | 2013-04-25 | 2013-07-24 | 浙江大学 | 一种垂直取向石墨烯表面修饰的集流体及其制备方法 |
CN105448635B (zh) | 2014-08-28 | 2018-01-09 | 北京北方华创微电子装备有限公司 | 原子层刻蚀装置及采用其的原子层刻蚀方法 |
JP6516542B2 (ja) * | 2015-04-20 | 2019-05-22 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
JP2017216346A (ja) * | 2016-05-31 | 2017-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
JP6667410B2 (ja) * | 2016-09-29 | 2020-03-18 | 東京エレクトロン株式会社 | ハードマスクおよびその製造方法 |
CN106450154B (zh) * | 2016-11-30 | 2019-03-08 | 哈尔滨工业大学 | 一种锂离子电池铝集流体表面原位生长石墨烯的制备方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014522104A (ja) * | 2011-07-20 | 2014-08-28 | ラム リサーチ コーポレーション | 不活性ガスから生成される準安定ガスを使用する原子層エッチング |
JP2017228791A (ja) * | 2011-07-20 | 2017-12-28 | ラム リサーチ コーポレーションLam Research Corporation | 不活性ガスから生成される準安定ガスを使用する原子層エッチング |
JP2015191922A (ja) * | 2014-03-27 | 2015-11-02 | 株式会社東芝 | 半導体装置の製造方法 |
JP2016201476A (ja) * | 2015-04-10 | 2016-12-01 | 東京エレクトロン株式会社 | プラズマエッチング方法、パターン形成方法及びクリーニング方法 |
JP2016208027A (ja) * | 2015-04-24 | 2016-12-08 | ラム リサーチ コーポレーションLam Research Corporation | コバルトのエッチバック |
JP2017063186A (ja) * | 2015-08-19 | 2017-03-30 | ラム リサーチ コーポレーションLam Research Corporation | タングステンおよび他の金属の原子層エッチング |
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