JP2019193406A - ゲート駆動回路およびゲート駆動方法 - Google Patents

ゲート駆動回路およびゲート駆動方法 Download PDF

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Publication number
JP2019193406A
JP2019193406A JP2018082704A JP2018082704A JP2019193406A JP 2019193406 A JP2019193406 A JP 2019193406A JP 2018082704 A JP2018082704 A JP 2018082704A JP 2018082704 A JP2018082704 A JP 2018082704A JP 2019193406 A JP2019193406 A JP 2019193406A
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Japan
Prior art keywords
gate
semiconductor element
mosfet
drive circuit
voltage
Prior art date
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Pending
Application number
JP2018082704A
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English (en)
Japanese (ja)
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JP2019193406A5 (enExample
Inventor
鈴木　弘
Hiroshi Suzuki
弘 鈴木
栗原　直樹
Naoki Kurihara
直樹 栗原
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2018082704A priority Critical patent/JP2019193406A/ja
Priority to PCT/JP2019/009651 priority patent/WO2019207977A1/ja
Priority to CN201980025569.4A priority patent/CN111971884A/zh
Priority to EP19792293.3A priority patent/EP3787164A1/en
Publication of JP2019193406A publication Critical patent/JP2019193406A/ja
Publication of JP2019193406A5 publication Critical patent/JP2019193406A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2018082704A 2018-04-24 2018-04-24 ゲート駆動回路およびゲート駆動方法 Pending JP2019193406A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018082704A JP2019193406A (ja) 2018-04-24 2018-04-24 ゲート駆動回路およびゲート駆動方法
PCT/JP2019/009651 WO2019207977A1 (ja) 2018-04-24 2019-03-11 ゲート駆動回路およびゲート駆動方法
CN201980025569.4A CN111971884A (zh) 2018-04-24 2019-03-11 栅极驱动电路和栅极驱动方法
EP19792293.3A EP3787164A1 (en) 2018-04-24 2019-03-11 Gate drive circuit and gate drive method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018082704A JP2019193406A (ja) 2018-04-24 2018-04-24 ゲート駆動回路およびゲート駆動方法

Publications (2)

Publication Number Publication Date
JP2019193406A true JP2019193406A (ja) 2019-10-31
JP2019193406A5 JP2019193406A5 (enExample) 2021-01-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018082704A Pending JP2019193406A (ja) 2018-04-24 2018-04-24 ゲート駆動回路およびゲート駆動方法

Country Status (4)

Country Link
EP (1) EP3787164A1 (enExample)
JP (1) JP2019193406A (enExample)
CN (1) CN111971884A (enExample)
WO (1) WO2019207977A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114884320A (zh) * 2022-07-07 2022-08-09 深圳平创半导体有限公司 一种用于减小栅极负压驱动电路功耗的装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112421940B (zh) * 2020-10-15 2024-12-06 北京交通大学 一种mosfet栅极负反馈有源驱动电路
CN112332821B (zh) * 2020-12-02 2024-06-14 中北大学 一种mosfet无源隔离防直通快关驱动电路
CN112821730B (zh) * 2021-02-22 2024-05-17 北京交通大学 一种新型驱动拓扑及其驱动方法与串扰抑制方法
TW202510476A (zh) 2021-07-01 2025-03-01 愛爾蘭商納維達斯半導體有限公司 具有能量擷取閘極驅動器之整合式功率裝置
EP4131779A1 (en) 2021-08-03 2023-02-08 Infineon Technologies Austria AG Gate driver device
CN114400875A (zh) * 2021-12-27 2022-04-26 深圳市恒运昌真空技术有限公司 碳化硅mosfet驱动电路、开关电源及电子设备
US12050244B2 (en) * 2022-06-16 2024-07-30 Teradyne, Inc. Method for reduction of SIC MOSFET gate voltage glitches

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009055696A (ja) * 2007-08-27 2009-03-12 Fuji Electric Device Technology Co Ltd 半導体素子のゲート駆動回路およびゲート駆動方法
JP2012199763A (ja) * 2011-03-22 2012-10-18 Sanken Electric Co Ltd ゲートドライブ回路
JP2015023774A (ja) * 2013-07-23 2015-02-02 日新電機株式会社 ゲート駆動回路
WO2015182658A1 (ja) * 2014-05-30 2015-12-03 三菱電機株式会社 電力用半導体素子の駆動回路
JP2016034178A (ja) * 2014-07-31 2016-03-10 株式会社日立製作所 電力変換装置及びその制御方法
JP2016123199A (ja) * 2014-12-25 2016-07-07 パナソニックＩｐマネジメント株式会社 駆動装置、電力変換装置
WO2018008398A1 (ja) * 2016-07-04 2018-01-11 三菱電機株式会社 駆動回路およびそれを用いたパワーモジュール

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009225506A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 電力変換器
JP5130310B2 (ja) * 2010-03-17 2013-01-30 日立アプライアンス株式会社 電圧駆動型半導体素子のゲート駆動回路及び電力変換装置
JP5503427B2 (ja) 2010-06-22 2014-05-28 本田技研工業株式会社 ゲート駆動回路
JP5975833B2 (ja) * 2012-02-01 2016-08-23 三菱電機株式会社 電力変換装置
JP2014057491A (ja) * 2012-09-14 2014-03-27 Mitsubishi Electric Corp 半導体スイッチング素子のゲート駆動回路
JP6798179B2 (ja) * 2016-07-29 2020-12-09 富士電機株式会社 ３レベルチョッパ装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009055696A (ja) * 2007-08-27 2009-03-12 Fuji Electric Device Technology Co Ltd 半導体素子のゲート駆動回路およびゲート駆動方法
JP2012199763A (ja) * 2011-03-22 2012-10-18 Sanken Electric Co Ltd ゲートドライブ回路
JP2015023774A (ja) * 2013-07-23 2015-02-02 日新電機株式会社 ゲート駆動回路
WO2015182658A1 (ja) * 2014-05-30 2015-12-03 三菱電機株式会社 電力用半導体素子の駆動回路
JP2016034178A (ja) * 2014-07-31 2016-03-10 株式会社日立製作所 電力変換装置及びその制御方法
JP2016123199A (ja) * 2014-12-25 2016-07-07 パナソニックＩｐマネジメント株式会社 駆動装置、電力変換装置
WO2018008398A1 (ja) * 2016-07-04 2018-01-11 三菱電機株式会社 駆動回路およびそれを用いたパワーモジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114884320A (zh) * 2022-07-07 2022-08-09 深圳平创半导体有限公司 一种用于减小栅极负压驱动电路功耗的装置

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Publication number Publication date
WO2019207977A1 (ja) 2019-10-31
CN111971884A (zh) 2020-11-20
EP3787164A1 (en) 2021-03-03

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