JP2019192675A - 受光素子、及び、受光素子の製造方法 - Google Patents
受光素子、及び、受光素子の製造方法 Download PDFInfo
- Publication number
- JP2019192675A JP2019192675A JP2018080000A JP2018080000A JP2019192675A JP 2019192675 A JP2019192675 A JP 2019192675A JP 2018080000 A JP2018080000 A JP 2018080000A JP 2018080000 A JP2018080000 A JP 2018080000A JP 2019192675 A JP2019192675 A JP 2019192675A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- metal film
- light
- receiving element
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 92
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 230000007423 decrease Effects 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000001039 wet etching Methods 0.000 claims description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1037—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIVBVI compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (7)
- 受光部と遮光部とを含む第1面を有する半導体部と、
前記遮光部上に設けられた遮光のための金属膜と、
を備え、
前記金属膜は、前記第1面と反対側に臨み光の入射を受ける第2面を有し、
前記第2面には、複数の凹部が形成されており、
前記凹部の内面は、前記第2面から前記凹部の底部に向かうにつれて前記第2面に沿った方向における前記凹部のサイズが縮小するように曲がる曲面部を含む、
受光素子。 - 前記曲面部は、前記底部を構成するように延在している、
請求項1に記載の受光素子。 - 前記第2面における前記凹部のサイズは、前記第2面に交差する方向における前記金属膜のサイズ以下である、
請求項2に記載の受光素子。 - 前記第2面は、前記凹部の周囲に設けられた平坦な領域を含む、
請求項1〜3のいずれか一項に記載の受光素子。 - 前記凹部は、前記第2面に沿って一定のピッチで配列されている、
請求項1〜4のいずれか一項に記載の受光素子。 - 半導体部の第1面の一部上に遮光のための金属膜を形成することにより、前記金属膜から露出した受光部と前記金属膜に覆われた遮光部とを前記第1面に形成する第1工程と、
前記金属膜における前記第1面と反対側に臨む第2面の等方性のエッチングにより、前記第2面に複数の凹部を形成する第2工程と、
を備える受光素子の製造方法。 - 前記等方性のエッチングは、ウェットエッチングである、
請求項6に記載の受光素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018080000A JP7103832B2 (ja) | 2018-04-18 | 2018-04-18 | 受光素子、及び、受光素子の製造方法 |
EP19788839.9A EP3783674A4 (en) | 2019-04-09 | Light reception element and method for manufacturing light-reception element | |
US17/042,509 US11380724B2 (en) | 2018-04-18 | 2019-04-09 | Light reception element and method for manufacturing light-reception element |
PCT/JP2019/015499 WO2019203070A1 (ja) | 2018-04-18 | 2019-04-09 | 受光素子、及び、受光素子の製造方法 |
CN201980026029.8A CN111989784A (zh) | 2018-04-18 | 2019-04-09 | 受光元件以及受光元件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018080000A JP7103832B2 (ja) | 2018-04-18 | 2018-04-18 | 受光素子、及び、受光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019192675A true JP2019192675A (ja) | 2019-10-31 |
JP7103832B2 JP7103832B2 (ja) | 2022-07-20 |
Family
ID=68240043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018080000A Active JP7103832B2 (ja) | 2018-04-18 | 2018-04-18 | 受光素子、及び、受光素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11380724B2 (ja) |
JP (1) | JP7103832B2 (ja) |
CN (1) | CN111989784A (ja) |
WO (1) | WO2019203070A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111129100B (zh) * | 2019-12-31 | 2022-06-24 | 武汉天马微电子有限公司 | 一种显示面板及显示装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154382A (en) * | 1978-05-25 | 1979-12-05 | Canon Inc | Photo sensor device |
JPH05175539A (ja) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | 半導体受光装置及びその製造方法 |
JPH10284712A (ja) * | 1997-04-10 | 1998-10-23 | Denso Corp | 光センサの調整方法および光センサの調整装置 |
JP2000227610A (ja) * | 1999-02-05 | 2000-08-15 | Seiko Epson Corp | 散乱面形成方法、液晶表示装置の製造方法および電子機器 |
WO2013061990A1 (ja) * | 2011-10-24 | 2013-05-02 | 旭硝子株式会社 | 光学フィルタとその製造方法、並びに撮像装置 |
JP2014241351A (ja) * | 2013-06-12 | 2014-12-25 | パナソニック株式会社 | 凹凸部をもつ光半導体装置およびその製造方法 |
JP2015079232A (ja) * | 2013-07-09 | 2015-04-23 | 旭硝子株式会社 | 光学素子、投影装置及び光学素子の製造方法 |
US9608023B1 (en) * | 2016-05-02 | 2017-03-28 | Omnivision Technologies, Inc. | Edge reflection reduction |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0484462A (ja) | 1990-07-27 | 1992-03-17 | Nec Corp | 光伝導型赤外線検出器 |
JPH10112552A (ja) * | 1996-10-03 | 1998-04-28 | Sony Corp | 半導体装置 |
KR100813027B1 (ko) | 2001-08-18 | 2008-03-14 | 삼성전자주식회사 | 감광성 절연막 및 반사전극의 요철 형성방법 및 이를이용한 요철구조의 반사전극을 갖는 액정표시기의 제조방법 |
JP3730232B2 (ja) | 2003-04-24 | 2005-12-21 | ファナック株式会社 | 光学式エンコーダ |
CN104871043B (zh) * | 2012-12-28 | 2017-09-26 | 旭硝子株式会社 | 光学元件、投影装置和光学元件的制造方法 |
-
2018
- 2018-04-18 JP JP2018080000A patent/JP7103832B2/ja active Active
-
2019
- 2019-04-09 CN CN201980026029.8A patent/CN111989784A/zh active Pending
- 2019-04-09 US US17/042,509 patent/US11380724B2/en active Active
- 2019-04-09 WO PCT/JP2019/015499 patent/WO2019203070A1/ja unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154382A (en) * | 1978-05-25 | 1979-12-05 | Canon Inc | Photo sensor device |
JPH05175539A (ja) * | 1991-12-25 | 1993-07-13 | Mitsubishi Electric Corp | 半導体受光装置及びその製造方法 |
JPH10284712A (ja) * | 1997-04-10 | 1998-10-23 | Denso Corp | 光センサの調整方法および光センサの調整装置 |
JP2000227610A (ja) * | 1999-02-05 | 2000-08-15 | Seiko Epson Corp | 散乱面形成方法、液晶表示装置の製造方法および電子機器 |
WO2013061990A1 (ja) * | 2011-10-24 | 2013-05-02 | 旭硝子株式会社 | 光学フィルタとその製造方法、並びに撮像装置 |
JP2014241351A (ja) * | 2013-06-12 | 2014-12-25 | パナソニック株式会社 | 凹凸部をもつ光半導体装置およびその製造方法 |
JP2015079232A (ja) * | 2013-07-09 | 2015-04-23 | 旭硝子株式会社 | 光学素子、投影装置及び光学素子の製造方法 |
US9608023B1 (en) * | 2016-05-02 | 2017-03-28 | Omnivision Technologies, Inc. | Edge reflection reduction |
Also Published As
Publication number | Publication date |
---|---|
WO2019203070A1 (ja) | 2019-10-24 |
US11380724B2 (en) | 2022-07-05 |
JP7103832B2 (ja) | 2022-07-20 |
US20210020678A1 (en) | 2021-01-21 |
EP3783674A1 (en) | 2021-02-24 |
CN111989784A (zh) | 2020-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10614281B2 (en) | Optical fingerprint imaging system and array sensor | |
TWI741206B (zh) | 具有光學結構的積體電路 | |
JP4869634B2 (ja) | ウエハスケール・パッケージ用のリッドおよびその形成方法 | |
JP5637693B2 (ja) | 光電変換装置、及び撮像システム | |
JPWO2006025496A1 (ja) | 集光素子、固体撮像装置およびその製造方法 | |
US11747529B2 (en) | Wafer level microstructures for an optical lens | |
JP2005079338A (ja) | 固体撮像装置とその製造方法 | |
JP2005086186A (ja) | 固体撮像装置とその製造方法 | |
JP6479519B2 (ja) | 光電変換素子およびその製造方法 | |
WO2019203070A1 (ja) | 受光素子、及び、受光素子の製造方法 | |
WO2013172234A1 (ja) | 分光センサ | |
JP5589515B2 (ja) | 傾斜構造体の製造方法 | |
JP2006060250A (ja) | 固体撮像装置とその製造方法 | |
JP2007329323A (ja) | 半導体装置及びその製造方法 | |
US20070045683A1 (en) | Light reflectivity controlled photodiode cell, and method of manufacturing the same | |
JP6820959B2 (ja) | 光電変換素子 | |
JP4879454B2 (ja) | 光学応答の均一性が改良された撮像センサ | |
JP5821400B2 (ja) | 分光センサー及び角度制限フィルター | |
JP7488836B2 (ja) | 空間光変調器および発光装置 | |
US20240030366A1 (en) | Light-receiving element | |
JP5910679B2 (ja) | 分光フィルター及び分光センサー | |
JP2000012432A (ja) | アライメントマークの周辺構造 | |
JP5804166B2 (ja) | 分光センサー及び角度制限フィルター | |
JP2008135561A (ja) | フォトダイオード | |
JP2016029374A (ja) | 分光センサー及び角度制限フィルター |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220202 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220707 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7103832 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |