JP2019106481A - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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Abstract
Description
さらに、載置台の中心に接続された回転軸部を介して当該載置台の熱が逃げてしまい、載置台の面内温度分布が不均一となり、被処理基板の面内温度分布が不均一となる問題がある。
図1の成膜装置1は、略直方体状の処理容器11を備える。
処理容器11には、排気ライン12が接続されており、処理容器11は、排気ライン12により所定の減圧状態(圧力)に調整することが可能となっている。排気ライン12は、処理容器11に一端が接続される排気管12aを有する。排気管12aは、排気マニホールド等から成り、処理容器側とは反対側にメカニカルブースターポンプ等からなる真空ポンプ12bが接続されている。排気管12aにおける処理容器11と真空ポンプ12bとの間には、APC(自動圧力制御)バルブや比例制御弁等からなる、処理容器11内の圧力を調整する圧力調整部12cが設けられている。また、処理容器11には、圧力計13が設けられており、圧力調整部12cによる処理容器11内の圧力の調整は、圧力計13での計測結果に基づいて行われる。
ガス供給管15b1には、ガス供給源15e1が接続され、該供給源15e1からSiH4ガスが供給される。同様に、ガスライン15b2〜15b6にはそれぞれガス供給源15e2〜15e6が接続され、各ガス供給源15e2〜15e6からC3H8ガス、H2ガス、TMA(トリメチルアルミニウム)ガス、ClF3ガス、Arガスが供給される。
また、処理容器11内の構造物に付着した異物を除去する際には、例えば、ガス供給管15b3、15b5、15b6からClF3ガス、H2ガス、Arガスのうちの1種が、または、これらのうちの2種以上のガスが混合されて、処理容器11に供給される。
処理容器11の内部には、図2に示すように、被処理基板としてのSiC基板W(以下、基板W)がホルダHを介して載置される載置台20と、載置台20を回転させると共に該載置台20を支持する回転軸部21と、基板Wが載置されたホルダHを昇降させる昇降部22と、が設けられている。また、処理容器11の内部には収容部としてのサセプタ23が設けられており、サセプタ23は、載置台20を収容する内部空間を有すると共に、処理ガスが、載置台20の一端から載置台20の中心上を通り載置台20の他端に至るように上記内部空間に供給される。
載置台20は、耐熱性が高くかつ誘導加熱による加熱が容易な導電性材料で形成されており、例えば、上面がSiCによりコーティングされたグラファイト製の部材から構成される。
この支持部22aと昇降軸22bは、回転軸部21と同様な材料で形成される。後述するように、回転軸部21と支持部22aと昇降軸22bを、炭素繊維強化炭素複合材料等の熱伝導率が15W/m・K以下の材料で形成することにより、基板Wの温度の面内均一性を向上させることができる。
サセプタ23は、耐熱性が高くかつ誘導加熱による加熱が容易な導電性材料で形成されており、例えば、基板W側の面がSiCによりコーティングされたグラファイト製の部材から構成される。
なお、図示は省略するが、断熱材24の外側には、断熱材24を処理容器11から離間させた状態で該断熱材24を保持するための保持構造体が設けられている。
まず、基板Wが載置されたホルダHを、処理容器11内に搬入する(ステップS1)。具体的には、上記ホルダHを、成膜装置1の外部の搬送手段(図示せず)を用いて、成膜装置1の外部からゲートバルブ(図示せず)を介して処理容器11内に搬入し、載置台20の上方に位置させる。次に、昇降部22を上昇させ、支持部22aによりホルダHを支持する。次いで、上記搬送手段を処理容器11内から退避させると共に、昇降部22を下降させ、ホルダHを載置台20上に載置する。
成膜装置1と同様な構成でSiC膜を成膜する装置において、平面視中央の領域(以下、中央領域と省略)における載置台の温度やホルダの温度が低いことが知られていたが、本発明者らが鋭意検討したところ、中央領域における載置台の温度やホルダの温度が低いことは、中央領域に位置する部材の材料が原因の1つであることを知見した。具体的には以下の通りである。
また、回転軸部21及び昇降部22の電気抵抗率は、10〜50μΩ・mであり比較的低いため、回転軸部21及び昇降部22が誘導加熱により昇温されることが、載置台20やホルダHの中央部における温度低下を防ぐことができる理由の1つと考えられる。
本実施形態の成膜装置1では、載置台20の中央部を覆うように/上記中央部に掛かるように該載置台20に載置された基板Wであっても、例えば直径が6インチで上記中央部に覆うように/掛かるように載置せざるを得ないような基板Wであっても、基板Wの上記中央部を覆う部分/中央部にかかる部分(以下、基板Wの中央位置部分と省略することがある)の温度が低下していない。そのため基板Wの中央位置部分における熱起因や熱応力起因の欠陥(例えば三角欠陥や基底面転移欠陥)の発生を抑制することができる。
成膜時における膜の堆積速度は温度依存性が小さく、成膜時におけるH2ガスによるエッチング速度は温度に比例する温度依存性が大きい。そして、薄膜形成等のために低速で成膜する場合、成膜時における膜の堆積速度と成膜時におけるH2ガスによるエッチング速度とに差があまりない。そのため、低速で成膜する場合、従来のように載置台やホルダの中央部の温度が低いと、被処理基板の中央位置部分上の膜厚が厚くなる。それに対し、本実施形態では、基板Wの中央位置部分の温度が低下していないため、低速で成膜する場合に膜厚の面内均一性を向上させることができる。
アルミニウム(Al)をドーパントとするp型のSiC膜を形成する場合には、SiC膜に取り込まれる不純物の濃度は、SiC基板の温度が低い領域では高くなり、上記温度が高い領域では低くなる。本実施形態では、基板Wの中央位置部分の温度が低下していないため、p型のSiC膜の成膜における不純物濃度の面内均一性を向上させることができる。
ホルダHの面内温度分布について確認試験を行った。この確認試験(以下、確認試験1)では、ホルダHの径方向に沿って基板Wを並べて、H2ガスを用いたエッチングを行い、温度依存性のあるエッチング量と温度の関係式から、ホルダHの温度分布を算出した。なお、ホルダHのエッジから径方向に140〜160mm離間した領域内に、回転軸部21、支持部22a及び昇降軸22bが位置する。
つまり、回転軸部21、支持部22a及び昇降軸22bのうち少なくとも回転軸部21を炭素繊維強化炭素複合材料で形成することで、基板Wの温度の面内均一性を向上させることができる。
基板Wにおける載置台20の中央部を覆う部分/中央部にかかる部分の欠陥発生抑制について確認試験を行った。この確認試験(確認試験2)では、図4に示すように、直径300mmのホルダHの中央部に掛かるように1枚の直径3インチの基板W(以下、内側基板W)を載置し該内側基板Wの径方向外側にもう1枚の直径3インチの基板W(以下、外側基板W)を載置してSiC膜の成膜を行い、成膜されたSiC膜中の基底面転位欠陥をフォトルミネッセンス法により検出した。
実施例3では、図1等を用いて説明したように回転軸部21、支持部22a及び昇降軸22bが炭素繊維強化炭素複合材料で形成された成膜装置1で成膜を行った。一方、比較例2では、回転軸部21及び昇降軸22bがSiCで形成され支持部22aがグラファイトで形成されている点でのみ成膜装置1と異なる成膜装置で成膜を行った。なお、実施例3と比較例2とでは同一ロットの基板Wを使用した。また、以下の欠陥の個数は、3インチウェハ1枚当たりの欠陥の個数である。
この結果からも明らかのように、本実施形態の成膜装置1では、基板Wの中央位置部分における欠陥の発生を抑制することができる。
炭素繊維強化炭素複合材料で形成された回転軸部21、支持部22a及び昇降軸22bの耐久性について確認試験を行った。この確認試験(確認試験3)ではまず、炭素繊維強化炭素複合材料で形成された未使用の回転軸部21、支持部22a及び昇降軸22bをH2雰囲気に暴露させた。そして暴露させた時間が400分以上を超えたときに、回転軸部21、支持部22a及び昇降軸22bの質量の未使用時からの変化量を算出した。また、その後、ClF3ガスを用いた前述の除去処理を1時間行い、該除去処理前後の回転軸部21、支持部22a及び昇降軸22bの質量の変化量を算出した。なお、H2アニール処理は1600℃以上のH2ガス雰囲気下で行われ、除去処理は500℃以上のClF3ガス雰囲気下で行われた。
11 処理容器
14 コイル
14a 高周波電源
15 ガス供給ライン
20 載置台
21 回転軸部
22 昇降部
22a 支持部
22b 昇降軸
23 サセプタ
24 断熱材
100 制御部
W SiC基板
Claims (6)
- 載置台上の被処理基板を加熱すると共に該被処理基板に処理ガスを供給し、該被処理基板に対し成膜処理を行う成膜装置であって、
前記載置台を収容する内部空間を有し、前記処理ガスが前記内部空間に供給されると共に誘導加熱される収容部と、
前記載置台が回転可能に当該載置台を支持する回転軸部と、
外部の前記被処理基板の搬送装置と前記載置台との間で前記被処理基板を受け渡すために前記被処理基板を昇降する昇降部と、を備え、
前記回転軸部及び/または前記昇降部は、熱伝導率が15W/m・K以下であり融点が1800℃以上である材料から形成されることを特徴とする成膜装置。 - 前記材料の電気抵抗率は10〜50μΩ・mであることを特徴とする請求項1に記載の成膜装置。
- 前記材料は、炭素繊維強化炭素複合材料であることを特徴とする請求項1または2に記載の成膜装置。
- 前記収容部は、炭化ケイ素及び/またはグラファイトから形成されることを特徴とする請求項1〜3のいずれか1項に記載の成膜装置。
- 前記収容部の内部空間は、誘導加熱により1600℃以上に加熱されることを特徴とする請求項1〜4のいずれか1項に記載の成膜装置。
- 前記成膜処理によりSiC膜を形成することを特徴とする請求項1〜5のいずれか1項に記載の成膜装置。
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US16/770,674 US20210166964A1 (en) | 2017-12-13 | 2018-11-29 | Film forming apparatus |
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