JP2019096751A - 剥離装置 - Google Patents
剥離装置 Download PDFInfo
- Publication number
- JP2019096751A JP2019096751A JP2017225391A JP2017225391A JP2019096751A JP 2019096751 A JP2019096751 A JP 2019096751A JP 2017225391 A JP2017225391 A JP 2017225391A JP 2017225391 A JP2017225391 A JP 2017225391A JP 2019096751 A JP2019096751 A JP 2019096751A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- wafer
- peeling
- water
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000013078 crystal Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 238000009751 slip forming Methods 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 56
- 239000010410 layer Substances 0.000 description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 20
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- 238000000034 method Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
- B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
- B26D3/28—Splitting layers from work; Mutually separating layers by cutting
- B26D3/282—Splitting layers from work; Mutually separating layers by cutting by peeling-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/08—Means for treating work or cutting member to facilitate cutting
- B26D7/086—Means for treating work or cutting member to facilitate cutting by vibrating, e.g. ultrasonically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1121—Using vibration during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
- Y10T156/1132—Using vacuum directly against work during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
- Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
- Y10T156/1917—Electromagnetic radiation delaminating means [e.g., microwave, uv, ir, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1922—Vibrating delaminating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
- Y10T156/1944—Vacuum delaminating means [e.g., vacuum chamber, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Forests & Forestry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :60kHz
平均出力 :1.5W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.65
集光点の上下方向位置 :インゴットの第一の端面から300μm
送り速度 :200mm/s
インデックス量 :250〜400μm
4:インゴット保持手段
6:水槽
8:超音波手段
10:移動手段
12:ノズル
12a:ノズルの入口
12b:ノズルの出口
46:検出手段
50:インゴット
70:改質部
72:クラック
74:剥離層
76:ウエーハ
Claims (4)
- 透過性を有する波長のレーザー光線の集光点を生成すべきウエーハの厚みに相当する深さに位置づけてレーザー光線を照射して剥離層を形成したインゴットから生成すべきウエーハを剥離する剥離装置であって、
生成すべきウエーハを下にしてインゴットを垂下した状態で保持するインゴット保持手段と、
水が貯留された水槽と、
該水槽内の水に浸漬された超音波手段と、
該インゴット保持手段を上下方向に移動させ該超音波手段に対面させると共に少なくとも生成すべきウエーハを該水槽内の水に浸漬させる移動手段と、
生成すべきウエーハに向けて水を噴射して剥離を促進させるノズルと、
から少なくとも構成される剥離装置。 - インゴットから剥離されたウエーハを検出する検出手段が配設される請求項1記載の剥離装置。
- インゴットは、c軸とc軸に対し直交するc面とを有する単結晶SiCインゴットであり、
剥離層は、単結晶SiCに対して透過性を有する波長のレーザー光線の集光点を単結晶SiCインゴットの端面から生成すべきウエーハの厚みに相当する深さに位置づけて単結晶SiCインゴットにレーザー光線を照射してSiCがSiとCとに分離した改質部と改質部からc面に等方的に形成されるクラックとからなる剥離層である請求項1記載の剥離装置。 - インゴットは、端面の垂線に対してc軸が傾きc面と端面とでオフ角が形成されている単結晶SiCインゴットであり、
剥離層は、オフ角が形成される方向と直交する方向に改質部を連続的に形成して改質部からc面に等方的にクラックを生成し、オフ角が形成される方向にクラックの幅を超えない範囲で単結晶SiCインゴットと集光点とを相対的にインデックス送りしてオフ角が形成される方向と直交する方向に改質部を連続的に形成して改質部からc面に等方的にクラックを順次生成した剥離層である請求項3記載の剥離装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017225391A JP6976828B2 (ja) | 2017-11-24 | 2017-11-24 | 剥離装置 |
KR1020180132380A KR102591736B1 (ko) | 2017-11-24 | 2018-10-31 | 박리 장치 |
TW107141436A TWI785150B (zh) | 2017-11-24 | 2018-11-21 | 剝離裝置 |
US16/197,676 US10507637B2 (en) | 2017-11-24 | 2018-11-21 | Peeling apparatus |
CN201811398022.2A CN109841543B (zh) | 2017-11-24 | 2018-11-22 | 剥离装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017225391A JP6976828B2 (ja) | 2017-11-24 | 2017-11-24 | 剥離装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019096751A true JP2019096751A (ja) | 2019-06-20 |
JP6976828B2 JP6976828B2 (ja) | 2021-12-08 |
Family
ID=66634174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017225391A Active JP6976828B2 (ja) | 2017-11-24 | 2017-11-24 | 剥離装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10507637B2 (ja) |
JP (1) | JP6976828B2 (ja) |
KR (1) | KR102591736B1 (ja) |
CN (1) | CN109841543B (ja) |
TW (1) | TWI785150B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210134504A (ko) | 2020-05-01 | 2021-11-10 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 |
CZ309709B6 (cs) * | 2020-12-17 | 2023-08-09 | Disco Corporation | Zařízení na výrobu plátků |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
JP7146354B2 (ja) * | 2019-01-22 | 2022-10-04 | 株式会社ディスコ | キャリア板の除去方法 |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7442332B2 (ja) * | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
JP2022117116A (ja) * | 2021-01-29 | 2022-08-10 | 株式会社ディスコ | 剥離装置 |
US20230038035A1 (en) * | 2021-08-09 | 2023-02-09 | Globalwafers Co., Ltd. | Ingot jig assembly and ingot edge-polishing machine tool |
CN114932634A (zh) * | 2022-04-13 | 2022-08-23 | 深圳市米珈来智能装备有限公司 | 一种晶圆分离的设备以及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10100136A (ja) * | 1996-09-27 | 1998-04-21 | Tokyo Seimitsu Co Ltd | スライシング装置 |
JP2004335968A (ja) * | 2003-05-12 | 2004-11-25 | Sony Corp | 電気光学表示装置の製造方法 |
JP2010245303A (ja) * | 2009-04-07 | 2010-10-28 | Sumitomo Metal Fine Technology Co Ltd | ウエハ搬送方法およびウエハ搬送装置 |
JP2016124015A (ja) * | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4220580B2 (ja) * | 1995-02-10 | 2009-02-04 | 三菱電機株式会社 | 半導体装置の製造装置 |
KR0165467B1 (ko) * | 1995-10-31 | 1999-02-01 | 김광호 | 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 |
US6066229A (en) * | 1997-07-10 | 2000-05-23 | Sony Corporation | Method of recycling disk recording medium and apparatus for recovering metal reflective film |
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
US6491083B2 (en) * | 2001-02-06 | 2002-12-10 | Anadigics, Inc. | Wafer demount receptacle for separation of thinned wafer from mounting carrier |
TW550635B (en) * | 2001-03-09 | 2003-09-01 | Toshiba Corp | Manufacturing system of electronic devices |
WO2007087354A2 (en) * | 2006-01-24 | 2007-08-02 | Baer Stephen C | Cleaving wafers from silicon crystals |
CN101582265A (zh) * | 2008-05-12 | 2009-11-18 | 新科实业有限公司 | 磁头分离辅助装置及利用该装置制造磁头的方法 |
US9847243B2 (en) * | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
JP5509448B2 (ja) | 2009-09-07 | 2014-06-04 | 国立大学法人埼玉大学 | 基板スライス方法 |
KR101162684B1 (ko) * | 2009-11-09 | 2012-07-05 | 주식회사 케이씨텍 | 웨이퍼 분리장치 |
CN103857610B (zh) * | 2011-02-09 | 2016-01-20 | 必能信超声公司 | 用于分离叠片的方法和设备 |
US9452495B1 (en) * | 2011-07-08 | 2016-09-27 | Sixpoint Materials, Inc. | Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer |
JP2015516672A (ja) * | 2012-02-26 | 2015-06-11 | ソレクセル、インコーポレイテッド | レーザ分割及び装置層移設のためのシステム及び方法 |
JP6366996B2 (ja) * | 2014-05-19 | 2018-08-01 | 株式会社ディスコ | リフトオフ方法 |
JP6506520B2 (ja) * | 2014-09-16 | 2019-04-24 | 株式会社ディスコ | SiCのスライス方法 |
JP6399913B2 (ja) | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395634B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6395632B2 (ja) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | ウエーハの生成方法 |
JP6494382B2 (ja) * | 2015-04-06 | 2019-04-03 | 株式会社ディスコ | ウエーハの生成方法 |
-
2017
- 2017-11-24 JP JP2017225391A patent/JP6976828B2/ja active Active
-
2018
- 2018-10-31 KR KR1020180132380A patent/KR102591736B1/ko active IP Right Grant
- 2018-11-21 US US16/197,676 patent/US10507637B2/en active Active
- 2018-11-21 TW TW107141436A patent/TWI785150B/zh active
- 2018-11-22 CN CN201811398022.2A patent/CN109841543B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10100136A (ja) * | 1996-09-27 | 1998-04-21 | Tokyo Seimitsu Co Ltd | スライシング装置 |
JP2004335968A (ja) * | 2003-05-12 | 2004-11-25 | Sony Corp | 電気光学表示装置の製造方法 |
JP2010245303A (ja) * | 2009-04-07 | 2010-10-28 | Sumitomo Metal Fine Technology Co Ltd | ウエハ搬送方法およびウエハ搬送装置 |
JP2016124015A (ja) * | 2015-01-06 | 2016-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210134504A (ko) | 2020-05-01 | 2021-11-10 | 가부시기가이샤 디스코 | 웨이퍼의 생성 방법 |
US11890783B2 (en) | 2020-05-01 | 2024-02-06 | Disco Corporation | Production method of wafer |
CZ309709B6 (cs) * | 2020-12-17 | 2023-08-09 | Disco Corporation | Zařízení na výrobu plátků |
Also Published As
Publication number | Publication date |
---|---|
TWI785150B (zh) | 2022-12-01 |
CN109841543A (zh) | 2019-06-04 |
CN109841543B (zh) | 2024-02-20 |
KR102591736B1 (ko) | 2023-10-19 |
TW201926535A (zh) | 2019-07-01 |
US10507637B2 (en) | 2019-12-17 |
KR20190060666A (ko) | 2019-06-03 |
JP6976828B2 (ja) | 2021-12-08 |
US20190160804A1 (en) | 2019-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2019096751A (ja) | 剥離装置 | |
JP7034683B2 (ja) | 剥離装置 | |
JP7027215B2 (ja) | ウエーハの生成方法およびウエーハの生成装置 | |
KR102260340B1 (ko) | SiC 웨이퍼의 생성 방법 | |
JP6959120B2 (ja) | 剥離装置 | |
JP7009224B2 (ja) | 平坦化方法 | |
JP7073172B2 (ja) | ウエーハの生成方法 | |
KR20180063832A (ko) | SiC 웨이퍼의 생성 방법 | |
JP2019161037A (ja) | ウエーハの生成方法およびウエーハの生成装置 | |
KR102570139B1 (ko) | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 | |
JP2023116216A (ja) | ウエーハの生成方法 | |
JP2023170881A (ja) | 剥離装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200914 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210826 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210831 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211004 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211019 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211110 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6976828 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |