CN109841543A - 剥离装置 - Google Patents

剥离装置 Download PDF

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CN109841543A
CN109841543A CN201811398022.2A CN201811398022A CN109841543A CN 109841543 A CN109841543 A CN 109841543A CN 201811398022 A CN201811398022 A CN 201811398022A CN 109841543 A CN109841543 A CN 109841543A
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ingot
chip
face
stripping
unit
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CN109841543B (zh
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日野原和之
松尾晴贵
平田和也
山本凉兵
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Disco Corp
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    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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    • B23K26/08—Devices involving relative movement between laser beam and workpiece
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    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
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    • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
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    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
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    • B26D7/086—Means for treating work or cutting member to facilitate cutting by vibrating, e.g. ultrasonically
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    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
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    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
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    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
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    • Y10T156/19—Delaminating means
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Abstract

提供剥离装置，其能够容易地以剥离层为起点将晶片从锭剥离。剥离装置包含：锭保持单元，其按照使相当于晶片的部分向下而使锭悬垂的状态对该锭进行保持；水槽，其贮存水；超声波单元，其浸渍于水槽内的水中；移动单元，其使锭保持单元在上下方向上移动并使该锭保持单元与超声波单元面对，并且该移动单元使相当于晶片的部分浸渍于水槽的水中；以及喷嘴，其朝向相当于晶片的部分喷射水而促进晶片的剥离。

Description

剥离装置
技术领域
本发明涉及剥离装置，从形成有剥离层的锭剥离出晶片。
背景技术
IC、LSI、LED等器件是在以Si(硅)或Al2O3(蓝宝石)等为原材料的晶片的正面上层叠功能层并由分割预定线划分而形成的。另外，功率器件、LED等是在以单晶SiC(碳化硅)为原材料的晶片的正面上层叠功能层并由分割预定线划分而形成的。形成有器件的晶片通过切削装置、激光加工装置对分割预定线实施加工而分割成各个器件，分割得到的各器件被用于移动电话或个人计算机等电子设备。
供器件形成的晶片通常是利用划片锯将圆柱形状的锭薄薄地切断而生成的。切断得到的晶片的正面和背面通过研磨而精加工成镜面(例如，参照专利文献1)。但是，当利用划片锯将锭切断并对切断得到的晶片的正面和背面进行研磨时，锭的大部分(70％～80％)会被浪费，存在不经济的问题。特别是单晶SiC锭，其硬度高，难以利用划片锯切断，需要花费相当长的时间，因此生产率差，并且锭的单价高，在高效地生成晶片方面具有课题。
因此，本申请人提出了下述技术：将对于单晶SiC具有透过性的波长的激光光线的聚光点定位于单晶SiC锭的内部而对单晶SiC锭照射激光光线，在切断预定面形成剥离层，以剥离层为起点将晶片从单晶SiC锭剥离(例如，参照专利文献2)。
专利文献1：日本特开2000-94221号公报
专利文献2：日本特开2016-111143号公报
专利文献3：日本特开2011-060862号公报
但是，存在如下的问题：以剥离层为起点将晶片从锭剥离较困难，生产效率差。
另外，提出了下述技术：将对于Si(硅)具有透过性的波长的激光光线的聚光点定位于距离Si锭的端面相当于晶片的厚度的深度而对Si锭照射激光光线，在切断预定面形成改质层，以改质层为起点将晶片从Si锭剥离(例如，参照上述专利文献3)，但存在如下的问题：以改质层为起点将晶片从Si锭剥离较困难，生产效率差。
发明内容
鉴于上述事实而完成的本发明的课题在于提供剥离装置，其能够容易地以剥离层为起点将晶片从锭剥离。
为了解决上述课题，本发明所提供的是以下的剥离装置。即，一种剥离装置，其从将具有透过性的波长的激光光线的聚光点定位于相当于晶片的厚度的深度而照射激光光线从而形成有剥离层的锭将该晶片剥离，其中，该剥离装置包含：锭保持单元，其按照使相当于该晶片的部分向下而使锭悬垂的状态对该锭进行保持；水槽，其贮存水；超声波单元，其浸渍于该水槽内的水中；移动单元，其使该锭保持单元在上下方向上移动并使该锭保持单元与该超声波单元面对，并且该移动单元使相当于该晶片的部分浸渍于该水槽内的水中；以及喷嘴，其朝向相当于该晶片的部分喷射水而促进该晶片的剥离。
优选该剥离装置还包含检测单元，该检测单元对从锭剥离出的该晶片进行检测。优选所述锭是单晶SiC锭，其具有c轴和与c轴垂直的c面，所述剥离层由改质部和从改质部沿c面按照各向同性形成的裂纹构成，其中，所述改质部按照如下方式形成：将对于单晶SiC具有透过性的波长的激光光线的聚光点定位于距离单晶SiC锭的端面相当于该晶片的厚度的深度而对单晶SiC锭照射激光光线，使SiC分离成Si和C，从而形成该改质部。优选所述锭是c轴相对于端面的垂线倾斜并且通过c面和端面形成有偏离角的单晶SiC锭，所述剥离层按照如下方式形成：在与形成有偏离角的方向垂直的方向上连续地形成改质部并且从改质部沿c面按照各向同性生成裂纹，在形成有偏离角的方向上在不超过裂纹的宽度的范围内将单晶SiC锭与聚光点相对地进行转位进给，从而在与形成有偏离角的方向垂直的方向上连续地形成改质部，并且从改质部沿c面按照各向同性依次生成裂纹，从而形成该剥离层。
本发明所提供的剥离装置包含：锭保持单元，其按照使相当于该晶片的部分向下而使锭悬垂的状态对该锭进行保持；水槽，其贮存水；超声波单元，其浸渍于该水槽内的水中；移动单元，其使该锭保持单元在上下方向上移动并使该锭保持单元与该超声波单元面对，并且该移动单元使相当于该晶片的部分浸渍于该水槽内的水中；以及喷嘴，其朝向相当于该晶片的部分喷射水而促进该晶片的剥离，因此能够容易地以剥离层为起点将晶片从锭剥离。
附图说明
图1是剥离装置的立体图。
图2是图1所示的剥离装置的分解立体图。
图3的(a)是锭的主视图，图3的(b)是锭的俯视图。
图4的(a)是示出在图3的(a)和图3的(b)所示的锭中形成剥离层的情况的立体图，图4的(b)是示出在图3的(a)和图3的(b)所示的锭中形成剥离层的情况的主视图。
图5的(a)是形成有剥离层的锭的俯视图，图5的(b)是图5的(a)中的B-B线剖视图。
图6是示出对锭赋予超声波并且朝向相当于晶片的部分喷射水的状态的剥离装置的剖视图。
图7是示出已从锭剥离了晶片的状态的剥离装置的剖视图。
标号说明
2：剥离装置；4：锭保持单元；6：水槽；8：超声波单元；10：移动单元；12：喷嘴；12a：喷嘴的入口；12b：喷嘴的出口；46：检测单元；50：锭；70：改质部；72：裂纹；74：剥离层；76：晶片。
具体实施方式
以下，参照附图对按照本发明构成的剥离装置的实施方式进行说明。
在图1和图2中，整体用标号2表示的剥离装置包含：锭保持单元4，其按照使相当于要生成的晶片的部分向下而使锭悬垂的状态对锭进行保持；水槽6，其贮存水；超声波单元8，其浸渍于水槽6内的水中；移动单元10，其使锭保持单元4在上下方向上移动并使锭保持单元4与超声波单元8面对，并且该移动单元10至少将相当于要生成的晶片的部分浸渍于水槽6内的水中；以及喷嘴12，其朝向相当于要生成的晶片的部分喷射水而促进剥离。另外，在图1和图2中，用标号S表示水槽6内的水面。
参照图1和图2对锭保持单元4进行说明。本实施方式中的锭保持单元4具有圆板状的吸附片14。在吸附片14的下表面上形成有多个吸引孔(未图示)，多个吸引孔与吸引单元(未图示)连接。并且，在锭保持单元4中，利用吸引单元在吸附片14的下表面上生成吸引力，从而能够按照对锭的端面进行吸附而使锭悬垂的状态对锭进行保持。
对移动单元10进行说明。在本实施方式中，如图1和图2所示，移动单元10由电动气缸构成，其包含：圆柱状的活塞杆16，其从吸附片14的上表面向上方延伸；圆筒状的缸管18，其将活塞杆16支承为升降自如；以及电动机(未图示)，其借助滚珠丝杠(未图示)使活塞杆16升降。并且，移动单元10利用电动机使活塞杆16升降，从而能够使锭保持单元4的吸附片14升降，并且能够使吸附片14在任意的位置停止。另外，在本实施方式中，在图1和图2中箭头X所示的X轴方向上延伸的臂20的一端部与缸管18的上端部连接。臂20的另一端部与使臂20在图1和图2中箭头Y所示的Y轴方向上移动的臂移动机构22连接。臂移动机构22具有：长方体状的框体24，其形成有引导开口24a；滚珠丝杠(未图示)，其在框体24的内部沿Y轴方向延伸；以及电动机26，其与该滚珠丝杠的一个端部连结。臂移动机构22的滚珠丝杠的螺母部(未图示)固定于臂20的基端部。并且，臂移动机构22通过滚珠丝杠将电动机26的旋转运动转换成直线运动而传递至臂20，使臂20沿着引导开口24a在Y轴方向上移动。另外，X轴方向和Y轴方向垂直，由X轴方向和Y轴方向所限定的平面实质上是水平的。
对水槽6、超声波单元8和喷嘴12进行说明。本实施方式中的水槽6是长方体状，其具有：矩形状的底壁28；前壁30，其从底壁28的Y轴方向一端部向上方延伸；后壁32，其从底壁28的Y轴方向另一端部向上方延伸；以及一对侧壁34，它们从底壁28的X轴方向两端部向上方延伸，该水槽6的上端部开放。在底壁28载置有圆板状的超声波单元8，并浸渍于水槽6内的水中。超声波单元8由压电陶瓷等形成，振荡出超声波。如图2所示，在前壁30上形成有沿X轴方向延伸的长方形状的提供口30a，在后壁32上形成有圆形的排出口32a。在提供口30a安装有喷嘴12。从提供口30a向水槽6的外侧突出的喷嘴12的入口12a形成为圆形状。另一方面，从提供口30a向水槽6的内侧突出的喷嘴12的出口12b形成为与提供口30a相对应的长方形状。如图1所示，在水槽6的排出口32a经由波纹状的排出软管42连接着内置有过滤器(未图示)的过滤器容器40的入口(未图示)。过滤器容器40的出口与泵38的吸入口(未图示)连通。另外，泵38的喷出口38a经由提供软管36而与喷嘴12的入口12a连接。并且，贮存于水槽6的水从排出口32a通过排出软管42和过滤器，被过滤器过滤后的水被吸入至泵38的吸入口。另外，从泵38喷出的水通过提供软管36和喷嘴12而提供至水槽6。
在本实施方式中，在底壁28的比超声波单元8靠下游侧(排出口32a侧)的部分配置有晶片载置部件44，该晶片载置部件44的上表面随着朝向下游侧而向下方倾斜延伸。对从锭剥离的晶片进行载置的晶片载置部件44浸渍于水槽6内的水中。另外，在晶片载置部件44的上表面上设置有对从锭剥离出的晶片进行检测的检测单元46。检测单元46可由光电传感器等构成。
在图3的(a)和图3的(b)中示出形成剥离层之前的状态下的锭50。图示的锭50由六方晶单晶SiC整体形成为圆柱形状，其具有：圆形状的第一端面52；与第一端面52相反的一侧的圆形状的第二端面54；位于第一端面52与第二端面54之间的周面56；从第一端面52至第二端面54的c轴(＜0001＞方向)；以及与c轴垂直的c面({0001}面)。在图示的锭50中，c轴相对于第一端面52的垂线58倾斜，通过c面和第一端面52形成偏离角α(例如α＝1、3、6度)。在图3中用箭头表示c轴相对于垂线58倾斜的方向、即形成有偏离角α的方向A。另外，在锭50的周面56上形成有表示晶体取向的矩形状的第一定向平面60和第二定向平面62。第一定向平面60与形成有偏离角α的方向A平行，第二定向平面62与形成有偏离角α的方向A垂直。如图3的(b)所示，从上方观察，第二定向平面62的长度L2比第一定向平面60的长度L1短(L2＜L1)。另外，能够在形成剥离层之后通过上述的剥离装置2剥离出晶片的锭不限于上述锭50，例如可以为c轴相对于第一端面的垂线不倾斜、c面与第一端面的偏离角为0度(即，第一端面的垂线与c轴一致)的单晶SiC锭，或者可以为由Si(硅)或GaN(氮化镓)等单晶SiC以外的原材料形成的锭。
要想利用上述剥离装置2从锭50剥离出晶片，需要在锭50中形成剥离层，例如可以使用在图4的(a)和图4的(b)中示出一部分的激光加工装置64来实施剥离层形成。激光加工装置64具有：卡盘工作台66，其对被加工物进行保持；以及聚光器68，其对卡盘工作台66所保持的被加工物照射脉冲激光光线LB。构成为在上表面上对被加工物进行吸引保持的卡盘工作台66利用旋转单元(未图示)以在上下方向上延伸的轴线为中心进行旋转，并且利用x轴方向移动单元(未图示)在x轴方向上进退，利用y轴方向移动单元(未图示)在y轴方向上进退。聚光器68包含聚光透镜(未图示)，该聚光透镜用于对激光加工装置64的脉冲激光光线振荡器(未图示)所振荡出的脉冲激光光线LB进行会聚而照射至被加工物。另外，x轴方向是图4的(a)和图4的(b)中箭头x所示的方向，y轴方向是图4的(a)中箭头y所示的方向，是与x轴方向垂直的方向。由x轴方向和y轴方向所限定的平面实质上是水平的。另外，在图1和图2中用大写的X和Y表示的X轴方向和Y轴方向与在图4的(a)和图4的(b)中用小写的x和y表示的x轴方向和y轴方向可以一致，也可以不同。
参照图4的(a)和图4的(b)继续进行说明，当在锭50中形成剥离层时，首先使锭50的一个端面(在本实施方式中为第一端面52)朝上而使锭50吸引保持于卡盘工作台66的上表面上。或者，也可以在锭50的另一个端面(在本实施方式中为第二端面54)与卡盘工作台66的上表面之间夹设粘接剂(例如环氧树脂系粘接剂)而将锭50固定于卡盘工作台66。接着，利用激光加工装置64的拍摄单元(未图示)从锭50的上方对锭50进行拍摄。接着，根据拍摄单元所拍摄的锭50的图像，利用激光加工装置64的x轴方向移动单元、y轴方向移动单元和旋转单元使卡盘工作台66移动和旋转，从而将锭50的朝向调整为规定的朝向，并且对锭50和聚光器68在xy平面上的位置进行调整。在将锭50的朝向调整为规定的朝向时，如图4的(a)所示，使第二定向平面62与x轴方向一致，从而使与形成有偏离角α的方向A垂直的方向与x轴方向一致，并且使形成有偏离角α的方向A与y轴方向一致。接着，利用激光加工装置64的聚光点位置调整单元(未图示)使聚光器68升降，如图4的(b)所示，将聚光点FP定位于距离锭50的第一端面52相当于要生成的晶片的厚度的深度。接着，进行剥离层形成加工，一边使卡盘工作台66在与垂直于形成有偏离角α的方向A的方向一致的x轴方向上移动，一边从聚光器68对锭50照射对于单晶SiC具有透过性的波长的脉冲激光光线LB。当进行剥离层形成加工时，如图5的(a)和图5的(b)所示，在与形成有偏离角α的方向A垂直的方向上连续地形成改质部70，并且生成从改质部70沿着c面按照各向同性延伸的裂纹72，其中，随着脉冲激光光线LB的照射，使SiC分离成Si(硅)和C(碳)，接着照射的脉冲激光光线LB被之前形成的C吸收，使SiC连锁地分离成Si和C，形成改质部70。
参照图4的(a)、图4的(b)、图5的(a)和图5的(b)继续进行说明，接着剥离层形成加工而继续将卡盘工作台66在不超过裂纹72的宽度的范围内在与形成有偏离角α的方向A一致的y轴方向上相对于聚光点FP相对地按照规定的转位量Li进行转位进给。并且，交替重复进行剥离层形成加工和转位进给，从而在形成有偏离角α的方向A上隔开规定的转位量Li的间隔而形成多个在与形成有偏离角α的方向A垂直的方向上连续地延伸的改质部70，并且依次生成从改质部70沿着c面按照各向同性延伸的裂纹72，从而从上下方向观察，在形成有偏离角α的方向A上相邻的裂纹72与裂纹72重叠。由此，能够在距离锭50的第一端面52相当于要生成的晶片的厚度的深度形成由多个改质部70和裂纹72构成的、用于从锭50剥离晶片的强度降低的剥离层74。另外，剥离层74的形成例如可以在以下的加工条件下进行。
参照图6和图7，对使用上述剥离装置2从形成有剥离层74的锭50剥离晶片的剥离方法进行说明。在本实施方式中，首先按照使相当于要生成的晶片的部分向下(即，使作为与剥离层74接近的端面的第一端面52朝下)而使锭50悬垂的状态通过吸附片14从第二端面54侧对锭50进行吸附而进行保持。接着，利用臂移动机构22使臂20移动，使锭50的第一端面52与浸渍于水槽6内的水中的超声波单元8面对。接着，利用移动单元10使吸附片14下降，将锭50的第一端面52定位于距离超声波单元8的上表面为0.5mm～2.0mm的位置，并且将锭50的至少相当于要生成的晶片的部分(在本实施方式中是从第一端面52至剥离层74的部分)浸渍于水槽6内的水中。在本实施方式中，如图6所示，水面S位于剥离层74与第二端面54之间。接着，从超声波单元8振荡出超声波，同时使泵38进行动作，从喷嘴12的出口12b朝向相当于要生成的晶片的部分喷射水。由此，如图7所示，能够以剥离层74为起点从锭50剥离出要生成的晶片76。已剥离的晶片76通过由泵38生成的流动被搬运并载置于晶片载置部件44。并且，通过检测单元46对在晶片载置部件44载置有晶片76的情况进行检测。
如上所述，本实施方式中的剥离装置2包含：锭保持单元4，其按照使相当于晶片的部分向下而使锭50悬垂的状态对锭50进行保持；水槽6，其贮存水；超声波单元8，其浸渍于水槽6内的水中；移动单元10，其使锭保持单元4在上下方向上移动并使锭保持单元4与超声波单元8面对，并且该移动单元10使相当于晶片的部分浸渍于水槽6内的水中；以及喷嘴12，其朝向相当于晶片的部分喷射水而促进晶片的剥离，因此能够容易地以剥离层74为起点从锭50剥离出晶片76。
另外，在本实施方式中对如下的例子进行了说明：当在锭50中形成剥离层74时，使锭50在与形成有偏离角α的方向A垂直的方向上相对于聚光点FP相对地移动，并且在转位进给中，使锭50在形成有偏离角α的方向A上相对于聚光点FP相对地移动，不过，锭50与聚光点FP的相对的移动方向可以不是与形成有偏离角α的方向A垂直的方向，另外，转位进给中的锭50与聚光点FP的相对的移动方向可以不是形成有偏离角α的方向A。

Claims (4)

1.一种剥离装置，其从将具有透过性的波长的激光光线的聚光点定位于相当于晶片的厚度的深度而照射激光光线从而形成有剥离层的锭将该晶片剥离，其中，
该剥离装置包含：
锭保持单元，其按照使相当于该晶片的部分向下而使锭悬垂的状态对该锭进行保持；
水槽，其贮存水；
超声波单元，其浸渍于该水槽内的水中；
移动单元，其使该锭保持单元在上下方向上移动并使该锭保持单元与该超声波单元面对，并且该移动单元使相当于该晶片的部分浸渍于该水槽内的水中；以及
喷嘴，其朝向相当于该晶片的部分喷射水而促进该晶片的剥离。
2.根据权利要求1所述的剥离装置，其中，
该剥离装置还包含检测单元，该检测单元对从锭剥离出的该晶片进行检测。
3.根据权利要求1所述的剥离装置，其中，
所述锭是单晶SiC锭，其具有c轴和与c轴垂直的c面，
所述剥离层由改质部和从改质部沿c面按照各向同性形成的裂纹构成，其中，所述改质部按照如下方式形成：将对于单晶SiC具有透过性的波长的激光光线的聚光点定位于距离单晶SiC锭的端面相当于该晶片的厚度的深度而对单晶SiC锭照射激光光线，使SiC分离成Si和C，从而形成该改质部。
4.根据权利要求3所述的剥离装置，其中，
所述锭是c轴相对于端面的垂线倾斜并且通过c面和端面形成有偏离角的单晶SiC锭，
所述剥离层按照如下方式形成：在与形成有偏离角的方向垂直的方向上连续地形成改质部并且从改质部沿c面按照各向同性生成裂纹，在形成有偏离角的方向上在不超过裂纹的宽度的范围内将单晶SiC锭与聚光点相对地进行转位进给，从而在与形成有偏离角的方向垂直的方向上连续地形成改质部，并且从改质部沿c面按照各向同性依次生成裂纹，从而形成该剥离层。
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