TWI785150B - 剝離裝置 - Google Patents

剝離裝置 Download PDF

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TWI785150B
TWI785150B TW107141436A TW107141436A TWI785150B TW I785150 B TWI785150 B TW I785150B TW 107141436 A TW107141436 A TW 107141436A TW 107141436 A TW107141436 A TW 107141436A TW I785150 B TWI785150 B TW I785150B
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wafer
ingot
water
peeling
water tank
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TW201926535A (zh
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日野原和之
松尾晴貴
平田和也
山本涼兵
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日商迪思科股份有限公司
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    • H—ELECTRICITY
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    • B32—LAYERED PRODUCTS
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    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
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Abstract

[課題] 提供一種能以剝離層作為起點從晶棒容易地剝離晶圓的剝離裝置。[解決手段] 剝離裝置包含：晶棒保持手段，將相當於晶圓的部分向下並以垂下狀態保持晶棒；水槽，使水貯留；超音波手段，沉浸於水槽內的水中；移動手段，使晶棒保持手段在上下方向移動並面對超音波手段，同時使相當於該晶圓的部分沉浸於該水槽內的水中；以及噴嘴，向相當於晶圓的部分噴射水並使晶圓的剝離促進。

Description

剝離裝置
本發明為一種從形成剝離層的晶棒剝離晶圓的剝離裝置。
IC、LSI、LED等的元件係在以Si（矽）或Al2 O3 （藍寶石）等作為素材的晶圓的正面上層積功能層，並由分割預定線劃分而形成。另外，功率元件、LED等係以單晶SiC（碳化矽）作為素材的晶圓的正面上層積功能層並由分割預定線劃分而形成。形成元件的晶圓係藉由切割裝置、雷射加工裝置在分割預定線上實施加工並分割為各個元件，被分割的各元件被利用於行動電話、電腦等的電子機器。
形成元件的晶圓通常是藉由線鋸薄薄地切斷圓柱形狀的晶棒所成生。切斷的晶圓的正面及背面藉由研磨進行鏡面拋光（例如參閱專利文獻1）。但是，藉由線鋸切斷晶棒，並研磨切斷的晶圓正面及背面的話，晶棒的大部分（70%~80%）會被丟棄而有不經濟的問題。特別是在單晶SiC晶棒，其硬度高而難以藉由線鋸切斷並需要相當時間因而生產性不佳，且晶棒的單價高提高，具有需以較佳效率生成晶圓的課題。
因此本申請人提出一種技術提案，將對單晶SiC具有穿透性波長的雷射光線的聚光點定位於單晶SiC晶棒的內部，對單晶SiC晶棒照射雷射光線，在切斷預定面形成剝離層，並以剝離層作為起點從單晶SiC晶棒剝離晶圓（例如參閱專利文獻2）。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2000-94221號公報 [專利文獻2]日本特開2016-111143號公報 [專利文獻3]日本特開2011-060862號公報
[發明所欲解決的課題] 然而，存在難以將剝離層作為起點從晶棒剝離晶圓，而生產效率差的問題。
另外，雖有一種技術提案，將對Si（矽）具有穿透性波長的雷射光線的聚光點定位於距離Si晶棒的端面相當於該晶圓厚度的深度，對Si晶棒照射雷射光線並在切斷預定面形成剝離層，並以改質層作為起點從Si晶棒剝離晶圓（例如參閱上述專利文獻3），但其有難以將改質層作為起點從Si晶棒剝離晶圓而生產效率差的問題。
鑒於上述事實，本發明的課題為提供一種能以剝離層作為起點從晶棒容易地剝離晶圓的剝離裝置。
[解決課題的技術手段] 本發明提供以下的剝離裝置用來解決上述課題。亦即，一種剝離裝置，從晶棒剝離晶圓，該晶棒係將具有穿透性波長的雷射光線的聚光點定位於相當於該晶圓厚度的深度並照射雷射光線形成剝離層，該剝離裝置包含：晶棒保持手段，將相當於該晶圓的部分向下並以垂下狀態保持晶棒；水槽，使水貯留；超音波手段，沉浸於該水槽內的水中；移動手段，使該晶棒保持手段在上下方向移動並面對該超音波手段，同時使相當於該晶圓的部分沉浸於該水槽內的水中；以及噴嘴，向相當於該晶圓的部分噴射水並使該晶圓的剝離促進。
較佳為，進一步包含檢測手段，檢測從晶棒剝離的該晶圓之。晶棒為單晶SiC晶棒，具有c軸及對c軸正交的c面；剝離層為由改質部和裂痕所組成的剝離層，該改質部為將對單晶SiC具有穿透性波長的雷射光線的聚光點定位於距離單晶SiC晶棒的端面相當於該晶圓厚度的深度，並對單晶SiC晶棒照射雷射光線，使SiC分離為Si和C，該裂痕為從改質部至c面等向性形成。晶棒為單晶SiC晶棒，其c軸相對於端面的垂直線為傾斜的c面與端面形成偏角；剝離層在與形成偏角的方向正交的方向上連續地形成改質部，從改質部至c面等向性產生裂痕，並在形成偏角的方向上於不超過裂痕寬度的範圍內，將單晶SiC晶棒及聚光點相對地進行分度進給，在與形成偏角的方向正交的方向上連續地形成改質部，從改質部至c面等向性依序產生裂痕。
[發明功效] 本發明提供的剝離裝置包含：晶棒保持手段，將相當於該晶圓的部分向下並以垂下狀態保持晶棒；水槽，使水貯留；超音波手段，沉浸於該水槽內的水中；移動手段，使該晶棒保持手段在上下方向移動並面對該超音波手段，同時使相當於該晶圓的部分沉浸於該水槽內的水中；以及噴嘴，向相當於該晶圓的部分噴射水並使該晶圓的剝離促進；藉此能以剝離層作為起點從晶棒容易地剝離晶圓。
以下參閱根據本發明所構成的剝離裝置的實施方式之圖式進行說明。
在圖1及圖2以符號2表示整體的剝離裝置，其包含：晶棒保持手段，將相當於應生成晶圓的部分向下並以垂下狀態保持晶棒；水槽6，使水貯留；超音波手段8，沉浸於水槽6內的水中；移動手段10，使晶棒保持手段4在上下方向移動並面對超音波手段8，同時至少使相當於應生成晶圓的部分沉浸於水槽6內的水中；以及噴嘴12，向相當於應生成晶圓的部分噴射水並使剝離促進。再者，在圖1及圖2以符號S表示水槽6內的水面。
參閱圖1及圖2說明晶棒保持手段4。在本實施方式中的晶棒保持手段4具備圓板狀的吸附片14。在吸附片14的下表面形成有多個吸引孔（未圖示），且多個吸引孔連接吸引手段（未圖示）。並且，在晶棒保持手段4中，藉由以吸引手段在吸附片14的下表面生成吸引力，能吸附晶棒的端面並以垂下狀態保持晶棒。
以下說明移動手段10。本實施方式中如圖1及圖2所示，移動手段10由電動汽缸所構成，該電動汽缸具有：圓柱狀的活塞桿16，從吸附片14的上表面延伸至上方；圓筒狀的汽缸管18，昇降自如地支撐活塞桿16；以及馬達（未圖示），透過滾珠螺桿（未圖示）使活塞桿16昇降。並且，移動手段10藉由以馬達使活塞桿16昇降，而能使晶棒保持手段4的吸附片14昇降，並且能使吸附片14停止於任意位置。另外，在本實施方式中，在圖1及圖2中箭頭X所示的X軸方向上延伸的臂20的一端部連接汽缸管18的上端部。臂20的另一端部連接在圖1及圖2中箭頭Y所示的Y軸方向上使臂20移動的臂移動機構22。臂移動機構22具有：長方體狀的框體24，形成有導引開口24a；滾珠螺桿（未圖示），在框體24的內部於Y軸方向延伸；以及馬達26，連接於該滾珠螺桿的一端部。臂移動機構22的滾珠螺桿的螺帽部（未圖示）固定於臂20的基端部。並且臂移動機構22藉由滾珠螺桿將馬達26的旋轉運動變換為直線運動並傳遞至臂20，並沿著導引開口24a使臂20在Y軸方向移動。再者，因與X軸方向及Y軸方向正交，X軸方向及Y軸方向所規定的平面為實質上水平。
以下說明水槽6、超音波手段8及噴嘴12。本實施方式中的水槽6為長方體狀且上端部為開放，其具備：矩形狀的底壁28；前壁30，從底壁28的Y軸方向的一端部延伸至上方；後壁32，從底壁28的Y軸方向的另一端部延伸至上方；以及一對的側壁34，從底壁28的X軸方向的兩端部延伸至上方。圓板狀的超音波手段8載置於底壁28並沉浸於水槽6內的水中。超音波手段8由壓電陶瓷等形成，振盪超音波。如圖2所示，前壁30形成有在X軸方向延伸的長方形狀的供給口30a，後壁32形成有圓形的排出口32a。供給口30a裝設有噴嘴12。從供給口30a向水槽6的外側突出的噴嘴12的入口12a形成為圓形狀。另一方面，從供給口30a向水槽6的內側突出的噴嘴12的出口12b形成為對應供給口30a的長方形狀。如圖1所示，水槽6的排出口32a透過蛇腹狀的排出軟管42連接於內置過濾器（未圖示）的過濾器殼體40的入口40a。過濾器殼體40的出口（未圖示）連通泵38的吸入口（未圖示）。另外，泵38的吐出口38a透過供給軟管36連接於噴嘴12的入口12a。並且，水槽6貯留的水從排出口32a通過排出軟管42及過濾器，過濾器所過濾的水從泵38的吸入口吸入。另外，從泵38吐出的水通過供給軟管36及噴嘴12而供給至水槽6。
本實施方式中，在底壁28的超音波手段8的更下游側（排出口32a側）部分，配置有面向下游側且上表面往下方傾斜延伸的晶圓載置構件44。載置有從晶棒剝離的晶圓之晶圓載置構件44，沉浸於水槽6內的水中。另外，在晶圓載置構件44的上表面設有檢測從晶棒剝離的晶圓之檢測手段46。檢測手段46可由光電感測器等所構成。
在圖3（a）及圖3（b）中表示形成剝離層前的狀態下的晶棒50。圖示的晶棒50由六角單晶SiC作為整體而形成為圓柱形狀，具有：圓形狀的第一端面52；與第一端面52為相反側的圓形狀的第二端面54；周面56，位於第一端面52及第二端面54之間；c軸（＜0001＞方向），從第一端面52延伸至第二端面54；以及c面（{0001}面），與c軸正交。在圖示的晶棒50中，c軸相對於第一端面52的垂直線58傾斜，c面與第一端面52形成偏角α（例如α=1、3、6度）。c軸對垂直線85傾斜的方向（亦即形成偏角α的方向A）由圖3中的箭頭表示。另外，在晶棒50的周面56形成有表示晶體方向的矩形狀的第一定向平面60及第二定向平面62。第一定向平面60平行於形成偏角α的方向A，第二定向平面62正交於形成偏角α的方向A。如圖3（b）表示，從上方看去第二定向平面62的長度L2比第一定向平面60的長度L1短（L2＜L1）。再者，形成剝離層後藉由上述的剝離裝置2可使晶圓剝離的晶棒，並非限定於上述晶棒50，例如，可為c軸不相對於第一端面的垂直線傾斜，c面與第一端面的偏角為0度（亦即，第一端面的垂直線與c軸一致）的單晶SiC晶棒，或者亦可為由Si（矽）或GaN（氮化鎵）等的單晶SiC以外的素材形成的晶棒。
在以上述的剝離裝置2從晶棒50剝離晶圓時，需要在晶棒50形成剝離層，剝離層形成例如可使用圖4（a）及圖4（b）中表示部份的雷射加工裝置64來實施。雷射加工裝置64具備：保持工件的卡盤台66；以及聚光器68，對在卡盤台66保持的工件照射脈衝雷射光線LB。在上表面以吸引保持工件之方式構成的卡盤台66藉由旋轉手段（未圖示）以在上下方向延伸的軸線作為中心旋轉，並藉由x軸方向移動手段（未圖示）在x軸方向進退，藉由y軸方向移動手段（未圖示）在y軸方向進退。聚光器68包含聚光鏡（未圖示），該聚光鏡用來將雷射加工裝置64的脈衝雷射光線振盪器（未圖示）所振盪的脈衝雷射光線LB聚光並照射工件。再者，x軸方向為在圖4（a）及圖4（b）中箭頭x所示方向，y軸方向為圖4（a）中箭頭y所示方向且為與x軸方向正交的方向。x軸方向及y軸方向所規定的平面為實質上水平。另外，圖1及圖2中大寫的X及Y表示的X軸方向及Y軸方向，可與圖4（a）及圖4（b）中小寫的x及y表示的x軸方向及y軸方向相同，亦可為不同。
參閱圖4（a）及圖4（b）繼續說明，在晶棒50形成剝離層時，首先，晶棒50的一端面（本實施方式中的第一端面52）朝向上，使晶棒50在卡盤台66的上表面吸引保持。或者，亦可在晶棒50的另一端面（本實施方式中的第二端面54）與卡盤台66的上表面之間置入接著劑（例如環氧樹脂系接著劑）固定晶棒50於卡盤台66。接著，藉由雷射加工裝置64的攝像手段（未圖示）從晶棒50的上方對晶棒50攝像。接著，基於藉由攝像手段攝像的晶棒50的影像，藉由雷射加工裝置64的x軸方向移動手段、y軸方向移動手段及旋轉手段使卡盤台66移動及旋轉，藉此調整晶棒50的方向至預定的方向並調整晶棒50與聚光器68在xy平面中的位置。調整晶棒50的方向至預定的方向時，如圖4（a）所示，藉由使第二定向平面62和x軸方向一致，使與形成偏角α的方向A正交的方向和x軸方向一致，並使形成偏角α的方向A和y軸方向一致。接著，藉由雷射加工裝置64的聚光點位置調整手段（未圖示）使聚光器68昇降，如圖4（b）所示，將聚光點FP定位於距離晶棒50的第一端面52相當於應生成晶圓厚度的深度。接著，在與形成偏角α的方向A正交的方向一致的x軸方向上使卡盤台66移動，同時進行剝離層形成加工，從聚光器68對晶棒50照射脈衝雷射光線LB，該脈衝雷射光線LB對單晶SiC具有穿透性波長。一旦進行剝離層形成加工，如圖5（a）及圖5（b）所示，改質部70在與形成偏角α的方向A正交的方向上連續地形成，同時生成從改質部70沿著c面等向性延伸的裂痕72，前述改質部70係藉由脈衝雷射光線LB的照射將SiC分離為Si（矽）和C（碳），接著所照射的脈衝雷射光LB將之前形成的C吸收並連鎖地將SiC分離為Si和C。
參閱圖4（a）、圖4（b）、圖5（a）及圖5（b）繼續說明，接續剝離層形成加工後，在與形成偏角α的方向A一致的y軸方向上，將卡盤台66對聚光點FP相對地在不超過裂痕72的寬度範圍內僅以預定分度量Li分度進給。並且，藉由剝離層形成加工與分度進給交互重複，改質部70在與形成偏角α的方向A正交的方向上連續地延伸，在形成偏角α的方向A上以預定分度量Li間隔形成多個改質部70，並依序生成從改質層70沿著c面等向性延伸的裂痕72，在形成偏角α的方向A上相鄰的裂痕72與裂痕72在上下方向觀看為重疊。由此，在距離晶棒50的第一端面52相當於應生成晶圓厚度的深度，能夠形成強度下降的剝離層74，該剝離層74由多個改質層70及裂痕72組成，用來從晶棒50剝離晶圓。再者，剝離層74的形成可進行例如以下的加工條件。 脈衝雷射光線波長 ：1064nm 重複頻率 ：60kHz 平均輸出 ：1.5W 脈衝寬度 ：4ns 聚光點直徑 ：3μm 聚光鏡的數值孔徑（NA） ：0.65 聚光點的上下方向位置 ：距離晶棒的第一端面300μm 進給速度 ：200mm/s 分度量 ：250~400μm
參閱圖6及圖7，使用上述的剝離裝置2，說明從形成剝離層74的晶棒50剝離晶圓的剝離方法。本實施方式中示，首先，將相當於應生成晶圓的部分向下（亦即剝離層74附近端面的第一端面52向下），以晶棒50垂下的狀態藉由吸附片14從第二端面54側吸附並保持晶棒50。接著，藉由壁移動機構22使臂20移動，並使晶棒50的第一端面52面向沉浸於水槽6內的水中的超音波手段8。接著，藉由移動手段10使吸附片14下降，將晶棒50的第一端面52定位於從超音波手段8的上表面間隔開0.5~2.0mm的位置，同時，使晶棒50的至少相當於應生成晶圓的部分（本實施方式中從第一端面52至剝離層74的部分）沉浸於水槽6內的水中。本實施方式中如圖6所示，水面S位於剝離層74與第二端面54之間。接著，從超音波手段8振盪超音波同時使泵38作動，從噴嘴12的出口12b向相當於應生成晶圓的部分噴射水。由此如圖7所示，可以將剝離層74作為起點從晶棒50剝離應生成晶圓76的部分。剝離的晶圓76藉由以泵38生成的水流運送至晶圓載置構件44並載置於晶圓載置構件44。並且，藉由檢測手段46檢測出晶圓76是載置於晶圓載置構件44。
如以上所述，本實施方式的剝離裝置2包含：晶棒保持手段4，將相當於晶圓的部分向下並以垂下狀態保持晶棒50；水槽6，使水貯留；超音波手段8，沉浸於水槽6內的水中；移動手段10，使晶棒保持手段4在上下方向移動並面對超音波手段8，同時使相當於晶圓的部分沉浸於水槽6內的水中；以及噴嘴12，向相當於晶圓的部分噴射水並使晶圓的剝離促進；藉此能以剝離層74作為起點從晶棒50容易地剝離晶圓76。
再者，在本實施方式中，在晶棒50形成剝離層74時，雖以在與形成偏角α的方向A正交的方向上使晶棒50相對於聚光點FP移動，且在分度進給中在形成偏角α的方向A上使晶棒50相對於聚光點FP移動為例說明，但晶棒50及聚光點FP相對的移動方向可不為與形成偏角α的方向A正交的方向，另外，在分度進給中晶棒50及聚光點FP相對的移動方向亦可不為形成偏角α的方向A。
2‧‧‧剝離裝置4‧‧‧晶棒保持手段6‧‧‧水槽8‧‧‧超音波手段10‧‧‧移動手段12‧‧‧噴嘴12a‧‧‧噴嘴的入口12b‧‧‧噴嘴的出口46‧‧‧檢測手段50‧‧‧晶棒70‧‧‧改質部72‧‧‧裂痕74‧‧‧剝離層76‧‧‧晶圓
圖1係剝離裝置之立體圖。 圖2係圖1所示的剝離裝置之分解立體圖。 圖3（a）係晶棒之前視圖，圖3（b）係晶棒之俯視圖。 圖4（a）係表示使在圖3（a）及圖3（b）所示晶棒形成剝離層的樣子之立體圖，圖4（b）係表示使在圖3（a）及圖3（b）所示晶棒形成剝離層的樣子之前視圖。 圖5（a）係使剝離層形成的晶棒之俯視圖，圖5（b）係圖5（a）的B-B線之剖面圖。 圖6係表示對晶棒施加超音波並同時向相當於晶圓的部分噴射水的狀態的剝離裝置之剖面圖。 圖7係表示從晶棒使晶圓剝離的狀態的剝離裝置之剖面圖。
2‧‧‧剝離裝置
4‧‧‧晶棒保持手段
6‧‧‧水槽
8‧‧‧超音波手段
10‧‧‧移動手段
12‧‧‧噴嘴
12a‧‧‧噴嘴的入口
14‧‧‧吸附片
16‧‧‧活塞桿
18‧‧‧汽缸管
20‧‧‧臂
22‧‧‧臂移動機構
24‧‧‧框體
24a‧‧‧導引開口
26‧‧‧馬達
30‧‧‧前壁
30a‧‧‧供給口
32‧‧‧後壁
32a‧‧‧排出口
34‧‧‧側壁
36‧‧‧供給軟管
38‧‧‧泵
38a‧‧‧吐出口
40‧‧‧過濾器殼體
40a‧‧‧入口
42‧‧‧排出軟管
44‧‧‧晶圓載置構件
S‧‧‧水面

Claims (4)

  1. 一種剝離裝置，從晶棒剝離晶圓，該晶棒係將具有穿透性波長的雷射光線的聚光點定位於相當於該晶圓厚度的深度並照射雷射光線形成剝離層，該剝離裝置包含： 晶棒保持手段，將相當於該晶圓的部分向下並以垂下狀態保持晶棒； 水槽，使水貯留； 超音波手段，沉浸於該水槽內的水中； 移動手段，使該晶棒保持手段在上下方向移動並面對該超音波手段，同時使相當於該晶圓的部分沉浸於該水槽內的水中；以及 噴嘴，向相當於該晶圓的部分噴射水並使該晶圓的剝離促進。
  2. 如申請專利範圍第1項所述之剝離裝置，其中進一步包含檢測手段，檢測從晶棒剝離的該晶圓。
  3. 如申請專利範圍第1項所述之剝離裝置，其中晶棒為單晶SiC晶棒，具有c軸及對c軸正交的c面； 剝離層為由改質部和裂痕所組成的剝離層，該改質部為將對單晶SiC具有穿透性波長的雷射光線的聚光點定位於距離單晶SiC晶棒的端面相當於該晶圓厚度的深度，並對單晶SiC晶棒照射雷射光線，使SiC分離為Si和C，該裂痕為從改質部至c面等向性形成。
  4. 如申請專利範圍第3項所述之剝離裝置，其中晶棒為單晶SiC晶棒，其c軸相對於端面的垂直線為傾斜的c面與端面形成偏角； 剝離層在與形成偏角的方向正交的方向上連續地形成改質部，從改質部至c面等向性產生裂痕，並在形成偏角的方向上於不超過裂痕寬度的範圍內，將單晶SiC晶棒及聚光點相對地進行分度進給，在與形成偏角的方向正交的方向上連續地形成改質部，從改質部至c面等向性依序產生裂痕。
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