JP2019088152A - 半導体装置及びその駆動方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
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- H02M7/493—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode the static converters being arranged for operation in parallel
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
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- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
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- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H02M1/0054—Transistor switching losses
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0095—Hybrid converter topologies, e.g. NPC mixed with flying capacitor, thyristor converter mixed with MMC or charge pump mixed with buck
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
図1は、本発明の実施の形態1に係る半導体装置の構成を示す回路図である。図1の半導体装置は、第1パワー半導体モジュールであるIGBTモジュール11と、第2パワー半導体モジュールであるMOSFETモジュール21と、制御回路31と、電解コンデンサ32とを備える。
図3は、本発明の実施の形態2に係る半導体装置の構成を示す回路図である。以下、本実施の形態2に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図4は、本発明の実施の形態3に係る半導体装置の構成を示す側面図である。以下、本実施の形態3に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図5は、本発明の実施の形態4に係る半導体装置の構成を示す側面図である。以下、本実施の形態4に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図6は、本発明の実施の形態5に係る半導体装置の構成を示す回路図である。以下、本実施の形態5に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
実施の形態1〜5に係るMOSFETモジュール21は、例えばSiC(炭化珪素)、GaN(窒化ガリウム)などのワイドバンドギャップ半導体を含んでもよい。ワイドバンドギャップ半導体からなるMOSFETは、SiからなるMOSFETに比べて発生損失を低減することができる。このため、MOSFETモジュール21のサイズ及びコストを抑制することができる。
Claims (10)
- 第1パワー半導体スイッチング素子を含む第1パワー半導体モジュールと、
前記第1パワー半導体スイッチング素子と動作特性が異なる第2パワー半導体スイッチング素子を含み、前記第1パワー半導体モジュールと並列接続された第2パワー半導体モジュールと
を備え、
前記第1パワー半導体モジュールのスイッチングのタイミングと、前記第2パワー半導体モジュールのスイッチングのタイミングとをずらす動作モードを選択的に実行可能である、半導体装置。 - 請求項1に記載の半導体装置であって、
前記第2パワー半導体モジュールは、
前記動作モードを実行するための信号が入力される入力ピンをさらに含む、半導体装置。 - 請求項1に記載の半導体装置であって、
前記第1パワー半導体モジュール及び前記第2パワー半導体モジュールは、
前記第1パワー半導体モジュール及び前記第2パワー半導体モジュールを制御する制御回路からの信号に応じて前記動作モードを選択的に実行する、半導体装置。 - 請求項1から請求項3のうちのいずれか1項に記載の半導体装置であって、
パッケージサイズまたは定格電流に関して、前記第1パワー半導体モジュールは前記第2パワー半導体モジュールよりも大きく、
前記第2パワー半導体モジュールと接触する放熱フィンが存在しない、半導体装置。 - 請求項1から請求項4のうちのいずれか1項に記載の半導体装置であって、
基板をさらに備え、
前記第2パワー半導体モジュールは前記基板に平面実装され、
前記第1パワー半導体モジュールは前記第2パワー半導体モジュールとの間に前記基板を挟んで前記基板に実装される、半導体装置。 - 請求項1から請求項5のうちのいずれか1項に記載の半導体装置であって、
前記半導体装置に短絡が生じた場合に、前記第2パワー半導体モジュールの出力遮断と、前記第1パワー半導体モジュールの出力遮断とが順に行われる、半導体装置。 - 請求項1から請求項6のうちのいずれか1項に記載の半導体装置であって、
前記動作モードが実行された場合、前記第1パワー半導体モジュールがオンした後に前記第2パワー半導体モジュールがオンし、前記第2パワー半導体モジュールがオフした後に前記第1パワー半導体モジュールがオフする、半導体装置。 - 請求項1から請求項7のうちのいずれか1項に記載の半導体装置であって、
前記第2パワー半導体モジュールは、ワイドバンドギャップ半導体を含む、半導体装置。 - 請求項1から請求項8のうちのいずれか1項に記載の半導体装置であって、
前記第1パワー半導体スイッチング素子はIGBTまたはRC−IGBTであり、
前記第2パワー半導体スイッチング素子はMOSFETである、半導体装置。 - 半導体装置の駆動方法であって、
前記半導体装置は、
第1パワー半導体スイッチング素子を含む第1パワー半導体モジュールと、
前記第1パワー半導体スイッチング素子と動作特性が異なる第2パワー半導体スイッチング素子を含み、前記第1パワー半導体モジュールと並列接続された第2パワー半導体モジュールと
を備え、
前記駆動方法は、
前記第1パワー半導体モジュールのスイッチングのタイミングと、前記第2パワー半導体モジュールのスイッチングのタイミングとをずらす動作モードを選択的に実行可能である、半導体装置の駆動方法。
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JP2017216069A JP6820825B2 (ja) | 2017-11-09 | 2017-11-09 | 半導体装置及びその駆動方法 |
US16/132,095 US11218083B2 (en) | 2017-11-09 | 2018-09-14 | Semiconductor device and method for driving the same |
DE102018217867.4A DE102018217867B4 (de) | 2017-11-09 | 2018-10-18 | Halbleitervorrichtung und Verfahren zum Ansteuern derselben |
CN201811302650.6A CN109768787B (zh) | 2017-11-09 | 2018-11-02 | 半导体装置及其驱动方法 |
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JP2021097461A (ja) * | 2019-12-16 | 2021-06-24 | 三菱電機株式会社 | 駆動装置およびパワーモジュール |
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DE102019107112B3 (de) * | 2019-03-20 | 2020-07-09 | Lisa Dräxlmaier GmbH | Schaltvorrichtung, Spannungsversorgungssystem, Verfahren zum Betreiben einer Schaltvorrichtung und Herstellverfahren |
GB2617604A (en) * | 2022-04-13 | 2023-10-18 | Eaton Intelligent Power Ltd | Bidirectional power semiconductor switch |
CN117277752A (zh) * | 2023-11-13 | 2023-12-22 | 智新半导体有限公司 | 一种驱动电路、系统及方法 |
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JP7292196B2 (ja) | 2019-12-16 | 2023-06-16 | 三菱電機株式会社 | 駆動装置およびパワーモジュール |
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JP6820825B2 (ja) | 2021-01-27 |
DE102018217867B4 (de) | 2022-08-04 |
US20190140634A1 (en) | 2019-05-09 |
US11218083B2 (en) | 2022-01-04 |
DE102018217867A1 (de) | 2019-05-09 |
CN109768787B (zh) | 2023-07-07 |
CN109768787A (zh) | 2019-05-17 |
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