JP2019062263A - 半導体集積回路 - Google Patents
半導体集積回路 Download PDFInfo
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- JP2019062263A JP2019062263A JP2017183234A JP2017183234A JP2019062263A JP 2019062263 A JP2019062263 A JP 2019062263A JP 2017183234 A JP2017183234 A JP 2017183234A JP 2017183234 A JP2017183234 A JP 2017183234A JP 2019062263 A JP2019062263 A JP 2019062263A
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- circuit
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- semiconductor integrated
- insulation
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000008878 coupling Effects 0.000 claims abstract description 34
- 238000010168 coupling process Methods 0.000 claims abstract description 34
- 238000005859 coupling reaction Methods 0.000 claims abstract description 34
- 238000009413 insulation Methods 0.000 claims abstract description 29
- 238000002955 isolation Methods 0.000 claims description 23
- 238000010586 diagram Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/0264—Arrangements for coupling to transmission lines
- H04L25/0266—Arrangements for providing Galvanic isolation, e.g. by means of magnetic or capacitive coupling
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
実施の形態1における半導体集積回路を説明する。図1は、実施の形態1における半導体集積回路の構成を示す回路図である。
実施の形態2における半導体集積回路を説明する。なお、実施の形態1と同様の構成および動作については説明を省略する。
実施の形態3における半導体集積回路を説明する。なお、実施の形態1または2と同様の構成および動作については説明を省略する。
実施の形態4における半導体集積回路を説明する。なお、実施の形態1から3のいずれかと同様の構成および動作については説明を省略する。
実施の形態5における半導体集積回路を説明する。なお、実施の形態1から4のいずれかと同様の構成および動作については説明を省略する。
Claims (5)
- 低電圧の制御信号によって制御され、前記低電圧の制御信号よりも高電圧で駆動する第1回路と、
前記第1回路に前記低電圧の制御信号を出力して、前記第1回路の駆動を制御する第2回路と、
各々が絶縁素子を含み、前記第1回路と前記第2回路との間を直列に接続する複数の絶縁回路と、を備え、
各前記絶縁回路は、
前記絶縁素子にて前記制御信号を磁気結合または容量結合させることにより前記制御信号を前記第2回路から前記第1回路に伝達し、かつ、前記絶縁素子にて前記第1回路と前記第2回路との間を絶縁することにより前記高電圧が前記第1回路から前記第2回路に印加されることを防ぐ半導体集積回路。 - 前記複数の絶縁回路のうち少なくとも1つの絶縁回路は、前記制御信号を磁気結合させる磁気結合素子を前記絶縁素子として含む請求項1に記載の半導体集積回路。
- 前記複数の絶縁回路のうち少なくとも1つの絶縁回路は、前記制御信号を容量結合させる容量結合素子を前記絶縁素子として含む請求項1または請求項2に記載の半導体集積回路。
- 前記複数の絶縁回路のうち少なくとも1つの絶縁回路は、前記制御信号を磁気結合させる磁気結合素子を前記絶縁素子として含み、かつ、少なくとも1つの別の絶縁回路は、前記制御信号を容量結合させる容量結合素子を前記絶縁素子として含む請求項1から請求項3のいずれか一項に記載の半導体集積回路。
- 前記第1回路は、スイッチング素子を含み、
前記第2回路は、前記スイッチング素子に前記制御信号を出力して前記スイッチング素子の駆動を制御することにより、前記第1回路の前記駆動を制御し、
前記スイッチング素子は、SiCを含むトランジスタからなる半導体デバイスである請求項1から請求項4のいずれか一項に記載の半導体集積回路。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017183234A JP7038511B2 (ja) | 2017-09-25 | 2017-09-25 | 半導体集積回路 |
US16/044,744 US20190096863A1 (en) | 2017-09-25 | 2018-07-25 | Semiconductor integrated circuit |
DE102018215310.8A DE102018215310A1 (de) | 2017-09-25 | 2018-09-10 | Integrierte Halbleiterschaltung |
JP2021075845A JP2021108499A (ja) | 2017-09-25 | 2021-04-28 | 半導体集積回路 |
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JP2017183234A JP7038511B2 (ja) | 2017-09-25 | 2017-09-25 | 半導体集積回路 |
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JP2021075845A Division JP2021108499A (ja) | 2017-09-25 | 2021-04-28 | 半導体集積回路 |
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JP2019062263A true JP2019062263A (ja) | 2019-04-18 |
JP7038511B2 JP7038511B2 (ja) | 2022-03-18 |
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JP2017183234A Active JP7038511B2 (ja) | 2017-09-25 | 2017-09-25 | 半導体集積回路 |
JP2021075845A Pending JP2021108499A (ja) | 2017-09-25 | 2021-04-28 | 半導体集積回路 |
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US (1) | US20190096863A1 (ja) |
JP (2) | JP7038511B2 (ja) |
DE (1) | DE102018215310A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020261536A1 (ja) * | 2019-06-28 | 2020-12-30 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
Families Citing this family (1)
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JP2023062736A (ja) * | 2021-10-22 | 2023-05-09 | アズールテスト株式会社 | 半導体デバイス検査装置 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009232637A (ja) * | 2008-03-25 | 2009-10-08 | Rohm Co Ltd | スイッチ制御装置及びこれを用いたモータ駆動装置 |
JP2010116024A (ja) * | 2008-11-12 | 2010-05-27 | Sanden Corp | 車両用通信制御装置 |
JP2010206754A (ja) * | 2009-03-06 | 2010-09-16 | Fuji Electric Systems Co Ltd | 信号伝送回路及び電力変換装置 |
WO2011018835A1 (ja) * | 2009-08-10 | 2011-02-17 | 株式会社日立製作所 | 半導体駆動装置と電力変換装置 |
JP2013017011A (ja) * | 2011-07-04 | 2013-01-24 | Sanken Electric Co Ltd | ゲートドライブ回路 |
WO2013065254A1 (ja) * | 2011-11-01 | 2013-05-10 | パナソニック株式会社 | ゲート駆動回路 |
JP2013222978A (ja) * | 2012-04-12 | 2013-10-28 | Yokogawa Electric Corp | パルス信号出力回路 |
JP2014060602A (ja) * | 2012-09-18 | 2014-04-03 | Renesas Electronics Corp | 半導体装置 |
JP2014135838A (ja) * | 2013-01-10 | 2014-07-24 | Fuji Electric Co Ltd | 電力変換装置の駆動信号絶縁回路及びそれを用いた電力変換装置 |
JP2014230357A (ja) * | 2013-05-21 | 2014-12-08 | 富士電機株式会社 | 電力変換装置のゲート駆動電源供給回路 |
WO2015029363A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニックIpマネジメント株式会社 | ゲート駆動回路 |
JP2015149731A (ja) * | 2011-08-31 | 2015-08-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2016117410A1 (ja) * | 2015-01-20 | 2016-07-28 | 三菱電機株式会社 | 信号伝達装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674321B1 (en) * | 2001-10-31 | 2004-01-06 | Agile Materials & Technologies, Inc. | Circuit configuration for DC-biased capacitors |
JP4918795B2 (ja) * | 2006-03-16 | 2012-04-18 | 富士電機株式会社 | パワーエレクトロニクス機器 |
US7977721B2 (en) * | 2008-04-30 | 2011-07-12 | Agere Systems Inc. | High voltage tolerant metal-oxide-semiconductor device |
US8810287B2 (en) * | 2011-01-14 | 2014-08-19 | Panasonic Corporation | Driver for semiconductor switch element |
WO2013179333A1 (en) * | 2012-05-29 | 2013-12-05 | Fuji Electric Co., Ltd. | Isolator and isolator manufacturing method |
US9923643B2 (en) * | 2013-12-13 | 2018-03-20 | Silicon Laboratories Inc. | Techniques for reduced jitter in digital isolators |
-
2017
- 2017-09-25 JP JP2017183234A patent/JP7038511B2/ja active Active
-
2018
- 2018-07-25 US US16/044,744 patent/US20190096863A1/en active Pending
- 2018-09-10 DE DE102018215310.8A patent/DE102018215310A1/de active Pending
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2021
- 2021-04-28 JP JP2021075845A patent/JP2021108499A/ja active Pending
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009232637A (ja) * | 2008-03-25 | 2009-10-08 | Rohm Co Ltd | スイッチ制御装置及びこれを用いたモータ駆動装置 |
JP2010116024A (ja) * | 2008-11-12 | 2010-05-27 | Sanden Corp | 車両用通信制御装置 |
JP2010206754A (ja) * | 2009-03-06 | 2010-09-16 | Fuji Electric Systems Co Ltd | 信号伝送回路及び電力変換装置 |
WO2011018835A1 (ja) * | 2009-08-10 | 2011-02-17 | 株式会社日立製作所 | 半導体駆動装置と電力変換装置 |
JP2013017011A (ja) * | 2011-07-04 | 2013-01-24 | Sanken Electric Co Ltd | ゲートドライブ回路 |
JP2015149731A (ja) * | 2011-08-31 | 2015-08-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2013065254A1 (ja) * | 2011-11-01 | 2013-05-10 | パナソニック株式会社 | ゲート駆動回路 |
JP2013222978A (ja) * | 2012-04-12 | 2013-10-28 | Yokogawa Electric Corp | パルス信号出力回路 |
JP2014060602A (ja) * | 2012-09-18 | 2014-04-03 | Renesas Electronics Corp | 半導体装置 |
JP2014135838A (ja) * | 2013-01-10 | 2014-07-24 | Fuji Electric Co Ltd | 電力変換装置の駆動信号絶縁回路及びそれを用いた電力変換装置 |
JP2014230357A (ja) * | 2013-05-21 | 2014-12-08 | 富士電機株式会社 | 電力変換装置のゲート駆動電源供給回路 |
WO2015029363A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニックIpマネジメント株式会社 | ゲート駆動回路 |
WO2016117410A1 (ja) * | 2015-01-20 | 2016-07-28 | 三菱電機株式会社 | 信号伝達装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020261536A1 (ja) * | 2019-06-28 | 2020-12-30 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JPWO2020261536A1 (ja) * | 2019-06-28 | 2021-12-09 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP7038912B2 (ja) | 2019-06-28 | 2022-03-18 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
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Publication number | Publication date |
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US20190096863A1 (en) | 2019-03-28 |
JP7038511B2 (ja) | 2022-03-18 |
JP2021108499A (ja) | 2021-07-29 |
DE102018215310A1 (de) | 2019-03-28 |
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