JP2019054216A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
Description
フリップチップ実装を利用する半導体装置の例は種々あるが、ここでは、一例としてSSDを説明する。図1は実施形態のSSDの構成の一例を示すブロック回路図である。図1に示すように、SSD10は、コントローラ20、不揮発性半導体メモリとしてのフラッシュメモリ32−1、32−2(32と称することもある)、DRAM54、電源回路58、ホストインタフェース(ホストI/F)52等を備える。
ESD(Electro-Static Discharge)は、半導体装置内で放電電流が流れることで生じる。半導体装置は、局所的な発熱や電界集中に伴い発生するESDによって破壊されることがある。ESDにはいくつかの発生要因がある。これらのESDの発生要因に対する試験モデルがあり、現在適用されている試験方法は大きく分けて、人体モデル(Human Body Model:HBM)、マシンモデル(Machine Model:MM)、デバイス帯電モデル(Charged Device Model:CDM)の3種類がある。
このように第1実施形態によれば、絶縁層22を流れる電荷は、露出部39a、39b、39c、39d、第2ビア38a、38b、38c、38dを介してSSD10のグランド層42に流れ、半導体チップ20の内部回路には流れないので、ESD破壊を防止することができる。従来は、半導体チップ20の絶縁性を高め半導体チップ20をESD破壊から守るために、絶縁層22の上にさらに樹脂材料で形成される封止部(オーバーモールドとも称する)が形成されていたが、実施形態では、絶縁層22の絶縁耐性が低く静電気に依り発生した電荷が絶縁層22を流れても、露出部39a、39b、39c、39d、第2ビア38a、38b、38c、38dを介してSSD10のグランド層42に流れるので、封止部を省略してもよい。封止部の省略はSSDのコストダウンにつながる。
図5は第2実施形態のSSD10Aの外観の一例を示す平面図であり、図6は第2実施形態のコントローラ付近の断面構造の一例を示す断面図である。
図7は第3実施形態のSSDのグランド接続の一例を示す。第1、第2実施形態によれば、絶縁層22を流れる電荷は露出部39a、39b、39c、39d、第2ビア38a、38b、38c、38dを介してSSD10のグランド層42に流される。SSD10のグランド層42にはコントローラ20以外の実装チップのグランド端子も接続される。そのため、コントローラ20で静電気により生じた電荷をグランド層42に流すと、グランド層42に接続されている他の実装チップのグランドも瞬間的に高電位となり、他の実装チップを破壊する可能性がある。同様に、他の実装チップの電位変動によりグランド層42が瞬間的に高電位となり、コントローラ20の第2ビア38a、38b、38c、38dが高電位となり、コントローラ20がESD破壊される可能性がある。この可能性はグランド層42におけるコントローラ20からのグランドのコンタクトと、グランド層42における他の実装チップからのグランドのコンタクトとの配線距離に依存し、配線距離が近くなればなるほどその可能性は高くなる。両コンタクト間の間隔ではなく、両コンタクトを結ぶ配線長である。
Claims (13)
- 複数の端子を備える第1基板と、
前記第1基板にフリップチップ実装される半導体チップと、
前記第1基板と前記半導体チップとを覆う絶縁層と、
を具備する半導体装置であって、
前記複数の端子は前記半導体チップに電気的に接続される少なくとも1つの第1端子と、前記半導体チップに接続されない少なくとも1つの第2端子と、を具備し、
前記少なくとも1つの第2端子は前記絶縁層により覆われない半導体装置。 - 前記第1基板は前記少なくとも1つの第2端子に接続され、前記絶縁層により覆われない少なくとも1つの導電部を具備する請求項1記載の半導体装置。
- 前記第1基板は矩形形状であり、
前記少なくとも1つの第2端子は前記第1基板の少なくとも1つのコーナー部に位置する請求項1または請求項2記載の半導体装置。 - 前記絶縁層を覆う導電性シートをさらに具備する請求項1乃至請求項3のいずれか一項記載の半導体装置。
- 前記導電性シートは前記半導体装置に関する情報を記載するラベルを具備する請求項4記載の半導体装置。
- 前記第1基板と電気的に接続され、グランド端子を備える第2基板をさらに具備し、
前記少なくとも1つの第2端子は前記グランド端子に電気的に接続される請求項1乃至請求項5のいずれか一項記載の半導体装置。 - 第1基板と、
前記第1基板に実装される第1半導体部品と、
を具備する半導体装置であって、
前記第1半導体部品は、
複数の第1端子を備える第2基板と、
前記第2基板にフリップチップ実装される半導体チップと、
前記第2基板と前記半導体チップとを覆う絶縁層と、
を具備し、
前記第2基板の前記複数の第1端子は前記半導体チップに電気的に接続される少なくとも1つの第2端子と、前記半導体チップに電気的に接続されない少なくとも1つの第3端子と、を具備し
前記少なくとも1つの第3端子は前記絶縁層により覆われない半導体装置。 - 前記第2基板は前記少なくとも1つの第3端子に接続され、前記絶縁層により覆われない少なくとも1つの導電部を具備する請求項7記載の半導体装置。
- 前記第2基板は矩形形状であり、
前記少なくとも1つの第3端子は前記第2基板の少なくとも1つのコーナー部に位置する請求項7または請求項8記載の半導体装置。 - 前記第1基板はグランド層と、複数の第1ビアを具備し、
前記第2基板の前記少なくとも1つの第2端子は少なくとも1つの第2ビアを具備し、前記少なくとも1つの第3端子は少なくとも1つの第3ビアを具備し、
前記少なくとも1つの前記第3ビアは前記第1基板の前記複数の第1ビアを介して前記グランド層42に接続される請求項7乃至請求項9のいずれか一項記載の半導体装置。 - 前記第1基板に実装される第2半導体部品と、
前記第1半導体部品と前記第2半導体部品を覆う導電性シートをさらに具備する請求項10記載の半導体装置。 - 前記導電性シートは前記半導体装置に関する情報を記載するラベルを具備する請求項11記載の半導体装置。
- 前記第1半導体部品のグランド端子は前記第1基板の配線を介して前記グランド層と第1点で接続され、
前記第2半導体部品のグランド端子は前記第1基板の配線を介して前記グランド層と第2点で接続され、
前記第1点と前記第2点の間の配線距離は前記グランド層の前記第1半導体部品のグランド端子直下の第3点と、前記グランド層の前記第2半導体部品のグランド端子直下の第4点との間の配線距離より長い請求項12記載の半導体装置。
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