JP2019029576A - シリコン膜の形成方法および形成装置 - Google Patents
シリコン膜の形成方法および形成装置 Download PDFInfo
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Abstract
Description
<シリコン膜の形成方法の実施形態>
図1は本発明の一実施形態に係るシリコン膜の形成方法を示すフローチャート、図2はその工程断面図である。
最初に、図2(a)に示すように、シリコン等からなる半導体基体200上に、互いに異なる第1の膜201と第2の膜202が交互に複数回積層された積層膜に対し、膜の積層方向にトレンチやホール等の凹部203が形成された半導体ウエハ(以下単にウエハと記す)を準備する(ステップ1)。
次に、原子層シードについて詳細に説明する。
従来、CVDによるシリコン膜の成膜の際に用いられているシード層は、下地の表面にアミノシラン系ガス等のSi原料ガスを吸着させることにより、図3に示すように、インキュベーションタイムを短縮し、ステップカバレッジが良好で平坦な膜をえることを指向していた。しかし、シリコン原料を吸着させることによりインキュベーションタイムを短縮できるものの、下地の影響を受けるため、異なる下地上にシリコン膜を成膜する場合には、下地ごとにインキュベーションタイムに差がでてしまい、下地ごとに膜厚差が生じる。
次に、上記シリコン膜の形成方法を実施するための装置の一例について説明する。図7は本発明のシリコン膜を形成するためのシリコン膜形成装置の一例を示す断面図である。
次に、以上のように構成されるシリコン膜形成装置により、上述したようなシリコン膜の形成方法を実施する際の処理動作について説明する。以下の処理動作は制御部50における記憶部の記憶媒体に記憶された処理レシピに基づいて実行される。
次に、実験例について説明する。
ここでは、上述した図7の装置を用いて、下地として熱酸化膜(Th-SiO2)、プラズマALDによるSiO2膜(PE ALD SiO2)、熱ALDによるSiO2膜(T ALD SiO2)、プラズマALDによるSiN膜(PE ALD SiN)を用い、これらの下地の表面にシード層を形成した後、Co−Fllowにてシリコン膜を成膜した実験を行った(Split1〜3)。
以上、本発明の実施形態について説明したが、この発明は、上記の実施形態に限定されることはなく、その趣旨を逸脱しない範囲で種々変形可能である。
2;加熱炉
4;ヒータ
10;処理容器
20;ウエハボート
21;Si原料ガス供給機構
22;DCSガス供給機構
23;SiH4ガス供給機構
24;N2Oガス供給機構
46;排気管
47;真空ポンプ
50;制御部
200;半導体基体
201;第1の膜
202;第2の膜
203;凹部
204;シード層
205;原子層シード
206;シリコン膜
W;半導体ウエハ(被処理基板)
Claims (20)
- 被処理基板に形成された凹部内にシリコン膜を形成するシリコン膜の形成方法であって、
複数の異なる下地が露出する凹部を有する被処理基板を準備する工程と、
前記被処理基板を所定の温度に加熱しつつ、前記被処理基板に対し、前記複数の異なる下地に適合した原料ガスと、前記原料ガスと反応する反応ガスとをシーケンシャルに1回または複数回供給して、少なくとも前記凹部の内面に原子層シードを形成する工程と、
前記被処理基板を所定の温度に加熱しつつ、前記被処理基板にシリコン原料ガスを供給し、前記原子層シードの表面に、前記凹部を埋めるようにシリコン膜を成膜する工程と
を有することを特徴とするシリコン膜の形成方法。 - 前記原子層シードの形成に先立って、前記被処理基板を所定の温度に加熱しつつ、前記被処理基板に対し、シリコン原料ガスを供給し、前記凹部の内面にシード層を形成し、その上に前記原子層シードを形成する工程をさらに有することを特徴とする請求項1に記載のシリコン膜の形成方法。
- 前記シード層を形成する工程に用いる前記シリコン原料ガスは、アミノシラン系ガスであることを特徴とする請求項2に記載のシリコン膜の形成方法。
- 前記シリコン膜を成膜する工程に用いる前記シリコン原料ガスは、モノシランガスを含むことを特徴とする請求項1から請求項3のいずれか1項に記載のシリコン膜の形成方法。
- 前記シリコン膜を成膜する工程に用いる前記シリコン原料ガスは、モノシランガスと、塩素を含むSi化合物ガスとを含むことを特徴とする請求項4に記載のシリコン膜の形成方法。
- 前記塩素を含むSi化合物ガスは、ジクロロシランガスであることを特徴とする請求項5に記載のシリコン膜の形成方法。
- 前記被処理基板は、基体上に複数の異なる膜を積層して形成された積層膜を有し、その積層方向に前記凹部が形成され、前記凹部の側面に露出された前記複数の異なる膜が前記複数の異なる下地となることを特徴とする請求項1から請求項6のいずれか1項に記載のシリコン膜の形成方法。
- 前記異なる下地は、下地の材料が異なる、または下地の材料が同じでも下地の形成方法が異なるもしくは膜質が異なることを特徴とする請求項1から請求項7のいずれか1項に記載のシリコン膜の形成方法。
- 前記下地は、SiO2膜、SiN膜、TiN膜、およびHigh−k膜の何れかを含むことを特徴とする請求項1から請求項8のいずれか1項に記載のシリコン膜の形成方法。
- 前記原子層シードは、原料ガスとして、塩素を含むSi化合物ガス、塩素を含むTi化合物ガス、およびHigh−k膜の金属を含む化合物のいずれか、反応ガスとして酸化剤および窒化剤のいずれかを用いて形成されることを特徴とする請求項1から請求項9のいずれか1項に記載のシリコン膜の形成方法。
- 被処理基板に形成された凹部内にシリコン膜を形成するシリコン膜の形成方法であって、
基体上にSiO2膜およびSiN膜を交互に積層して形成された積層膜を有し、その積層方向に前記凹部が形成され、前記SiO2膜および前記SiN膜が前記凹部の側面に露出した状態の被処理基板を準備する工程と、
前記被処理基板を所定の温度に加熱しつつ、前記被処理基板に対し、塩素を含むSi化合物ガスと、酸化剤とをシーケンシャルに1回または複数回供給して、少なくとも前記凹部の内面にSiO2膜からなる原子層シードを形成する工程と、
前記被処理基板を所定の温度に加熱しつつ、前記被処理基板にモノシランガスを含むシリコン原料ガスを供給し、前記原子層シードの表面に、前記凹部を埋めるようにシリコン膜を成膜する工程と
を有することを特徴とするシリコン膜の形成方法。 - 前記原子層シードを形成する際に用いる前記塩素を含むSi化合物ガスはジクロロシランガスであり、前記酸化剤はN2Oガスであることを特徴とする請求項11に記載のシリコン膜の形成方法。
- 前記原子層シードの形成に先立って、前記被処理基板を所定の温度に加熱しつつ、前記被処理基板に対し、アミノシラン系ガスを供給し、前記凹部の内面にアミノシランシード層を形成し、その上に前記原子層シードを形成する工程をさらに有することを特徴とする請求項11または請求項12に記載のシリコン膜の形成方法。
- 前記シリコン膜を成膜する工程に用いる前記シリコン原料ガスは、モノシランガスと、塩素を含むSi化合物ガスとを含むことを特徴とする請求項11から請求項13のいずれか1項に記載のシリコン膜の形成方法。
- 前記塩素を含むSi化合物ガスは、ジクロロシランガスであることを特徴とする請求項14に記載のシリコン膜の形成方法。
- 前記原子層シードを形成する工程は、100〜600℃の範囲の温度に加熱して行われることを特徴とする請求項11から請求項15のいずれか1項に記載のシリコン膜の形成方法。
- 基体上にSiO2膜およびSiN膜を交互に積層して形成された積層膜を有し、その積層方向に前記凹部が形成され、前記SiO2膜および前記SiN膜が前記凹部の側面に露出した状態の被処理基板に対し、前記凹部内にシリコン膜を形成するシリコン膜の形成装置であって、
前記被処理基板を収容する処理容器と、
前記処理容器内に所定のガスを供給するガス供給部と、
前記処理容器内を加熱する加熱機構と、
前記処理容器内を排気して減圧状態とする排気機構と、
前記ガス供給部、前記加熱機構、および前記排気機構を制御する制御部と
を具備し、
前記制御部は、
前記排気機構により前記処理容器内を減圧しつつ、前記加熱機構により前記被処理基板を所定の温度に加熱し、前記被処理基板に対し、前記ガス供給部から、塩素を含むSi化合物ガスと、酸化剤とをシーケンシャルに1回または複数回供給して、少なくとも前記凹部の内面にSiO2膜からなる原子層シードを形成し、次いで、前記加熱機構により前記被処理基板を所定の温度に加熱しつつ、前記被処理基板に対し、前記ガス供給部からモノシランガスを含むシリコン原料ガスを供給し、前記原子層シードの表面に、前記凹部を埋めるようにシリコン膜を成膜するように、前記ガス供給部、前記加熱機構、および前記排気機構を制御することを特徴とするシリコン膜の形成装置。 - 前記制御部は、前記原子層シードの形成に先立って、前記加熱機構により前記被処理基板を所定の温度に加熱しつつ、前記被処理基板に対し、前記ガス供給部からアミノシラン系ガスを供給し、前記凹部の内面にアミノシランシード層を形成するように、前記ガス供給部、前記加熱機構、および前記排気機構を制御することを特徴とする請求項17に記載のシリコン膜の形成装置。
- 前記制御部は、前記シリコン膜を成膜する際の前記シリコン原料ガスが、モノシランガスと、塩素を含むSi化合物ガスとを含むように前記ガス供給部を制御することを特徴とする請求項17または請求項18に記載のシリコン膜の形成装置。
- コンピュータ上で動作し、シリコン膜の形成装置を制御するためのプログラムが記憶された記憶媒体であって、前記プログラムは、実行時に、請求項1から請求項16のいずれかのシリコン膜の形成方法が行われるように、コンピュータに前記シリコン膜の形成装置を制御させることを特徴とする記憶媒体。
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