JP2018531525A - イメージセンシングチップパッケージ構造およびそのパッケージ方法 - Google Patents
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/144—Devices controlled by radiation
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Abstract
【選択図】図1
Description
Claims (13)
- イメージセンサチップと、
前記イメージセンサチップを制御するように構成されている制御チップと、
第1の面及び第2の面を互いに反対側に有する基板を備え、
前記イメージセンサチップは、前記基板に電気的に接続され、前記基板の前記第1の面に設けられており、
前記制御チップは前記基板に電気的に接続され、前記基板の前記第2の面に設けられているイメージセンサチップパッケージ。 - 前記イメージセンサチップが第1の面及び第2の面を互いに反対側に有し、前記イメージセンサチップの前記第1の面に、感光領域と、前記感光領域以外の部分に接触パッドとが設けられており、前記イメージセンサチップの前記第2の面には、前記接触パッドに電気的に接続されたはんだボールが設けられており、前記イメージセンサチップが前記はんだボールを介して前記基板に電気的に接続されている、請求項1に記載のイメージセンサチップパッケージ。
- 前記イメージセンサチップの前記第1の面が、保護カバー板で覆われており、密封されたキャビティが前記保護カバー板と前記イメージセンサチップとの間に形成されており、前記感光領域が前記密封されたキャビティ内にある、請求項2に記載のイメージセンサチップパッケージ。
- 前記保護カバー板が反射防止ガラス製である、請求項3に記載のイメージセンサチップパッケージ。
- 前記基板の前記第2の面に、外部回路との電気的接続用のはんだバンプブロックが設けられており、前記はんだバンプブロックの高さが前記制御チップの高さよりも大きく、前記はんだバンプブロックが前記外部回路に電気的に接続された際、前記制御チップと前記外部回路の間に空間が形成される、請求項1に記載のイメージセンサチップパッケージ。
- 前記制御チップがフリップチップ法により前記基板に電気的に接続されている、請求項1に記載のイメージセンサチップパッケージ。
- 前記制御チップが糸はんだを介して前記基板に電気的に接続されている、請求項1に記載のイメージセンサチップパッケージ。
- イメージセンサチップと、前記イメージセンサチップを制御するように構成されている制御チップを準備する工程と、
第1の面及び第2の面を互いに反対側に有する基板を準備する工程と、
前記制御チップを前記基板の前記第2の面に電気的に接続する工程と、
前記イメージセンサチップを前記基板の前記第1の面に電気的に接続する工程を含む、イメージセンサチップのパッケージ方法。 - 前記イメージセンサチップを前記基板に電気的に接続する前記工程の前に、
それぞれが第1の面及び第2の面を互いに反対側に有し、前記第1の面に感光領域と、前記感光領域以外の部分に接触パッドとが設けられている所定の配列のイメージセンサチップを含むウェーハを準備し、
前記イメージセンサチップと一対一で対応する所定の配列の支持ユニットが表面に設けられた、前記ウェーハと同一サイズの保護カバー板を準備し、
各イメージセンサチップと前記保護カバー板との間に密封されたキャビティが形成され、このキャビティ内に前記感光領域が位置するように、前記ウェーハを前記保護カバー板に位置を合わせて積層し、
前記イメージセンサチップの前記第2の面に、前記接触パッドと一対一で対応する複数の貫通シリコンビアを、前記接触パッドが前記貫通シリコンビアの底部から露出するように貫通シリコンビア法により形成し、
前記貫通シリコンビア内に金属配線層を形成し、この金属配線層は前記接触パッドに電気的に接続するものであり、
前記イメージセンサチップの前記第2の面にはんだボールを形成し、このはんだボールは前記金属配線層に電気的に接続するものであり、
前記イメージセンサチップ及び前記保護カバー板を切断し、互いに接続しているイメージセンサチップを分離させる、請求項8に記載のイメージセンサチップのパッケージ方法。 - 前記保護カバー板が反射防止ガラス製である、請求項9に記載のイメージセンサチップのパッケージ方法。
- 前記制御チップが、フリップチップ法により前記基板に電気的に接続されている、請求項8に記載のイメージセンサチップのパッケージ方法。
- 前記制御チップが、ワイヤボンディング法により前記基板に電気的に接続されている、請求項8に記載のイメージセンサチップのパッケージ方法。
- 前記基板の前記第2の面に、外部回路への電気的接続用のはんだバンプブロックを設ける工程をさらに含み、このはんだバンプブロックの高さが前記制御チップの高さより大きく、前記はんだバンプブロックが前記外部回路に電気的に接続された際、前記制御チップと前記外部回路との間に隙間が形成される、請求項8に記載のイメージセンサチップのパッケージ方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511008692.5A CN105448944B (zh) | 2015-12-29 | 2015-12-29 | 影像传感芯片封装结构及其封装方法 |
CN201521117238.9U CN205452287U (zh) | 2015-12-29 | 2015-12-29 | 影像传感芯片封装结构 |
CN201511008692.5 | 2015-12-29 | ||
CN201521117238.9 | 2015-12-29 | ||
PCT/CN2016/112080 WO2017114353A1 (zh) | 2015-12-29 | 2016-12-26 | 影像传感芯片封装结构及其封装方法 |
Publications (2)
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JP2018531525A true JP2018531525A (ja) | 2018-10-25 |
JP2018531525A6 JP2018531525A6 (ja) | 2018-12-13 |
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JP2018540203A Pending JP2018531525A (ja) | 2015-12-29 | 2016-12-26 | イメージセンシングチップパッケージ構造およびそのパッケージ方法 |
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US (1) | US20180308890A1 (ja) |
JP (1) | JP2018531525A (ja) |
KR (1) | KR20180061293A (ja) |
WO (1) | WO2017114353A1 (ja) |
Families Citing this family (4)
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WO2017122449A1 (ja) * | 2016-01-15 | 2017-07-20 | ソニー株式会社 | 半導体装置および撮像装置 |
JP7364343B2 (ja) * | 2019-02-26 | 2023-10-18 | 浜松ホトニクス株式会社 | 光検出装置の製造方法、及び光検出装置 |
KR102650997B1 (ko) | 2019-05-20 | 2024-03-25 | 삼성전자주식회사 | 이미지 센서 패키지 |
KR20210021172A (ko) | 2019-08-14 | 2021-02-25 | 삼성전자주식회사 | 이미지 센서 칩을 포함하는 반도체 패키지 |
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JP2007184680A (ja) * | 2006-01-04 | 2007-07-19 | Fujifilm Corp | 固体撮像装置及びその製造方法 |
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KR100738653B1 (ko) * | 2005-09-02 | 2007-07-11 | 한국과학기술원 | 이미지 센서 모듈용 웨이퍼 레벨 칩 사이즈 패키지 및 이의제조방법 |
CN100552941C (zh) * | 2006-12-27 | 2009-10-21 | 日月光半导体制造股份有限公司 | 影像感测模块 |
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CN102623477A (zh) * | 2012-04-20 | 2012-08-01 | 苏州晶方半导体股份有限公司 | 影像传感模组、封装结构及其封装方法 |
JP6693068B2 (ja) * | 2015-03-12 | 2020-05-13 | ソニー株式会社 | 固体撮像装置および製造方法、並びに電子機器 |
CN205452287U (zh) * | 2015-12-29 | 2016-08-10 | 苏州晶方半导体科技股份有限公司 | 影像传感芯片封装结构 |
CN105448944B (zh) * | 2015-12-29 | 2019-09-17 | 苏州晶方半导体科技股份有限公司 | 影像传感芯片封装结构及其封装方法 |
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- 2016-12-26 WO PCT/CN2016/112080 patent/WO2017114353A1/zh active Application Filing
- 2016-12-26 KR KR1020187011950A patent/KR20180061293A/ko not_active Application Discontinuation
- 2016-12-26 JP JP2018540203A patent/JP2018531525A/ja active Pending
- 2016-12-26 US US15/767,623 patent/US20180308890A1/en not_active Abandoned
Patent Citations (4)
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JPH11260996A (ja) * | 1998-03-16 | 1999-09-24 | Matsushita Electron Corp | 光学半導体装置とその製造方法 |
JP2002158326A (ja) * | 2000-11-08 | 2002-05-31 | Apack Technologies Inc | 半導体装置、及び製造方法 |
JP2007184680A (ja) * | 2006-01-04 | 2007-07-19 | Fujifilm Corp | 固体撮像装置及びその製造方法 |
JP2015084378A (ja) * | 2013-10-25 | 2015-04-30 | キヤノン株式会社 | 電子部品、電子機器、実装部材の製造方法、電子部品の製造方法 |
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WO2017114353A1 (zh) | 2017-07-06 |
US20180308890A1 (en) | 2018-10-25 |
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