JP7364343B2 - 光検出装置の製造方法、及び光検出装置 - Google Patents
光検出装置の製造方法、及び光検出装置 Download PDFInfo
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- JP7364343B2 JP7364343B2 JP2019032873A JP2019032873A JP7364343B2 JP 7364343 B2 JP7364343 B2 JP 7364343B2 JP 2019032873 A JP2019032873 A JP 2019032873A JP 2019032873 A JP2019032873 A JP 2019032873A JP 7364343 B2 JP7364343 B2 JP 7364343B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 138
- 239000000758 substrate Substances 0.000 claims description 108
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000000126 substance Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
[第1実施形態]
[光検出装置の構成]
[光検出装置の製造方法]
[作用及び効果]
[第2実施形態]
[光検出装置の構成]
[光検出装置の製造方法]
[作用及び効果]
[変形例]
Claims (2)
- 第1主面及び前記第1主面とは反対側の第2主面を有し、半導体基板を含み、前記半導体基板に対して前記第2主面側において2次元に配置された複数の受光領域が形成された半導体ウェハを用意する第1工程と、
前記第1工程の後に、前記第1主面に第1支持基板を設ける第2工程と、
前記第2工程の後に、前記第1主面に前記第1支持基板が設けられた状態で、前記複数の受光領域のそれぞれごとに前記半導体ウェハ及び前記第1支持基板を切断し、切断された前記第1主面の一部に対応する第1表面に、切断された前記第1支持基板の一部に対応する支持部材が設けられた状態で、切断された半導体ウェハの一部に対応する受光素子を得る第3工程と、
前記第3工程の後に、切断された前記第2主面の一部に対応する第2表面と回路構造体の実装面との間に配置された複数の接続部材を用いて、前記第1表面に前記支持部材が設けられた状態で、前記受光素子と前記回路構造体とを電気的且つ物理的に接続する第4工程と、
前記第4工程の後に、前記第1表面から前記支持部材を除去する第5工程と、
前記第1工程の後且つ前記第2工程の前に、前記第2主面に第2支持基板を設ける第6工程と、
前記第6工程の後且つ前記第2工程の前に、前記第2主面に前記第2支持基板が設けられた状態で、前記半導体ウェハを薄化する第7工程と、を備え、
前記第2工程においては、前記第2主面に前記第2支持基板が設けられた状態で、前記第1主面に前記第1支持基板を設け、前記第1主面に前記第1支持基板が設けられた状態で、前記第2主面から前記第2支持基板を除去する、光検出装置の製造方法。 - 前記第2工程の後且つ前記第3工程の前に、前記第2主面に、前記複数の接続部材として複数のバンプ電極を設ける第8工程を更に備える、請求項1に記載の光検出装置の製造方法。
Priority Applications (5)
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JP2019032873A JP7364343B2 (ja) | 2019-02-26 | 2019-02-26 | 光検出装置の製造方法、及び光検出装置 |
US17/310,780 US20220085095A1 (en) | 2019-02-26 | 2020-02-25 | Method for manufacturing photodetector, and photodetector |
CN202080016667.4A CN113474899A (zh) | 2019-02-26 | 2020-02-25 | 光检测装置的制造方法、及光检测装置 |
PCT/JP2020/007509 WO2020175483A1 (ja) | 2019-02-26 | 2020-02-25 | 光検出装置の製造方法、及び光検出装置 |
JP2023173747A JP2023181216A (ja) | 2019-02-26 | 2023-10-05 | 光検出装置の製造方法 |
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JP2019032873A JP7364343B2 (ja) | 2019-02-26 | 2019-02-26 | 光検出装置の製造方法、及び光検出装置 |
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JP2020136645A JP2020136645A (ja) | 2020-08-31 |
JP7364343B2 true JP7364343B2 (ja) | 2023-10-18 |
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JP2023173747A Pending JP2023181216A (ja) | 2019-02-26 | 2023-10-05 | 光検出装置の製造方法 |
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JP (2) | JP7364343B2 (ja) |
CN (1) | CN113474899A (ja) |
WO (1) | WO2020175483A1 (ja) |
Citations (7)
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WO2003096427A1 (en) | 2002-05-10 | 2003-11-20 | Hamamatsu Photonics K.K. | Rear surface irradiation photodiode array and method for producing the same |
JP2008210846A (ja) | 2007-02-23 | 2008-09-11 | Fujifilm Corp | 裏面照射型固体撮像素子及びその製造方法 |
US20130285185A1 (en) | 2012-04-25 | 2013-10-31 | Samsung Electronics Co., Ltd. | Image sensor package |
JP2014165224A (ja) | 2013-02-21 | 2014-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置および光半導体装置の製造方法 |
JP2015508233A (ja) | 2012-02-08 | 2015-03-16 | ジーティーエイティー・コーポレーション | 裏面照射型センサを作製するための方法 |
US20150206916A1 (en) | 2014-01-20 | 2015-07-23 | Xintec Inc. | Semiconductor device and manufacturing method thereof |
JP2018181957A (ja) | 2017-04-06 | 2018-11-15 | 富士通株式会社 | 撮像素子及び撮像装置 |
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JP2001274528A (ja) * | 2000-01-21 | 2001-10-05 | Fujitsu Ltd | 薄膜デバイスの基板間転写方法 |
US20180308890A1 (en) * | 2015-12-29 | 2018-10-25 | China Wafer Level Csp Co., Ltd. | Image sensing chip packaging structure and packaging method therefor |
JP6748486B2 (ja) * | 2016-06-08 | 2020-09-02 | 浜松ホトニクス株式会社 | 光検出ユニット、光検出装置、及び、光検出ユニットの製造方法 |
WO2018088479A1 (ja) * | 2016-11-11 | 2018-05-17 | 浜松ホトニクス株式会社 | 光検出装置 |
JP7236807B2 (ja) * | 2018-01-25 | 2023-03-10 | 浜松ホトニクス株式会社 | 半導体装置、及び半導体装置の製造方法 |
US10622324B2 (en) * | 2018-02-08 | 2020-04-14 | Sensors Unlimited, Inc. | Bump structures for high density flip chip interconnection |
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2019
- 2019-02-26 JP JP2019032873A patent/JP7364343B2/ja active Active
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2020
- 2020-02-25 WO PCT/JP2020/007509 patent/WO2020175483A1/ja active Application Filing
- 2020-02-25 US US17/310,780 patent/US20220085095A1/en active Pending
- 2020-02-25 CN CN202080016667.4A patent/CN113474899A/zh active Pending
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2023
- 2023-10-05 JP JP2023173747A patent/JP2023181216A/ja active Pending
Patent Citations (7)
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WO2003096427A1 (en) | 2002-05-10 | 2003-11-20 | Hamamatsu Photonics K.K. | Rear surface irradiation photodiode array and method for producing the same |
JP2008210846A (ja) | 2007-02-23 | 2008-09-11 | Fujifilm Corp | 裏面照射型固体撮像素子及びその製造方法 |
JP2015508233A (ja) | 2012-02-08 | 2015-03-16 | ジーティーエイティー・コーポレーション | 裏面照射型センサを作製するための方法 |
US20130285185A1 (en) | 2012-04-25 | 2013-10-31 | Samsung Electronics Co., Ltd. | Image sensor package |
JP2014165224A (ja) | 2013-02-21 | 2014-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置および光半導体装置の製造方法 |
US20150206916A1 (en) | 2014-01-20 | 2015-07-23 | Xintec Inc. | Semiconductor device and manufacturing method thereof |
JP2018181957A (ja) | 2017-04-06 | 2018-11-15 | 富士通株式会社 | 撮像素子及び撮像装置 |
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Title |
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Publication number | Publication date |
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WO2020175483A1 (ja) | 2020-09-03 |
JP2020136645A (ja) | 2020-08-31 |
CN113474899A (zh) | 2021-10-01 |
US20220085095A1 (en) | 2022-03-17 |
JP2023181216A (ja) | 2023-12-21 |
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