JP2018530902A - 隙間が極細の配線を印刷する方法 - Google Patents
隙間が極細の配線を印刷する方法 Download PDFInfo
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- JP2018530902A JP2018530902A JP2017568350A JP2017568350A JP2018530902A JP 2018530902 A JP2018530902 A JP 2018530902A JP 2017568350 A JP2017568350 A JP 2017568350A JP 2017568350 A JP2017568350 A JP 2017568350A JP 2018530902 A JP2018530902 A JP 2018530902A
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- ink
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- 238000000034 method Methods 0.000 claims abstract description 68
- 238000007639 printing Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000002904 solvent Substances 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 18
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 12
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 12
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical group CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- 239000008204 material by function Substances 0.000 claims description 3
- 229920003986 novolac Polymers 0.000 claims description 2
- 230000008961 swelling Effects 0.000 abstract description 7
- 239000000976 ink Substances 0.000 description 52
- 230000008569 process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000007480 spreading Effects 0.000 description 8
- 238000003892 spreading Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 3
- 238000010017 direct printing Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000000813 microcontact printing Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000002522 swelling effect Effects 0.000 description 2
- 208000032912 Local swelling Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Ink Jet Recording Methods And Recording Media Thereof (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
Claims (16)
- 内層を基材上にコーティングした前記基材を用意する工程と、
前記基材の内層上にインクを堆積させることによって、隙間が極細の配線を印刷する工程であって、前記インクが、機能材料と、前記内層を膨潤させて、前記インクの縁部に前記内層を張り出させ、これによりインクを閉じ込める堤防を画定する溶媒とを含む、前記印刷する工程と、
を含む、機能材料の隙間が極細の配線を印刷する方法。 - 前記溶媒が、エタノールである、請求項1に記載の方法。
- 前記溶媒が、メタノールである、請求項1に記載の方法。
- 前記溶媒が、ブタノールである、請求項1に記載の方法。
- 前記溶媒が、エタンジオール、エタノール、グリセリン及び2−イソプロポキシエタノールを含む、請求項1に記載の方法。
- 前記内層が、完全エポキシ化ビスフェノールA/ホルムアルデヒドノボラックコポリマーから構成されるSU−8である、請求項1から5までのいずれか一項に記載の方法。
- 前記内層が、ポリビニルピロリドン(PVP)である、請求項1から5までのいずれか一項に記載の方法。
- 隙間が極細の前記配線が、同時に印刷される、請求項1から7までのいずれか一項に記載の方法。
- 前記機能材料が、導電性インクである、請求項1から8までのいずれか一項に記載の方法。
- 前記インクが、銀ナノ粒子インクである、請求項9に記載の方法。
- 前記基材が、銀ナノ粒子インクに対して不透過性である、請求項10に記載の方法。
- 隙間が極細の前記配線が、印刷可能な電子デバイスの薄膜トランジスタのソース電極及びドレイン電極を画定するように印刷される、請求項1から11までのいずれか一項に記載の方法。
- 隙間が極細の前記配線間の隙間が、3〜4μmである、請求項12に記載の方法。
- 隙間が極細の前記配線間の隙間が、1mmの長さにわたって1.5〜3μmである、請求項12に記載の方法。
- 隙間が極細の前記配線間の隙間が、10μmより小さい、請求項12に記載の方法。
- 隙間が極細の前記配線間の隙間が、1mmの長さにわたって3μmより小さい、請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562188563P | 2015-07-03 | 2015-07-03 | |
US62/188,563 | 2015-07-03 | ||
PCT/CA2016/050768 WO2017004703A1 (en) | 2015-07-03 | 2016-06-30 | Method of printing ultranarrow-gap lines |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018530902A true JP2018530902A (ja) | 2018-10-18 |
Family
ID=57684698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017568350A Ceased JP2018530902A (ja) | 2015-07-03 | 2016-06-30 | 隙間が極細の配線を印刷する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10125285B2 (ja) |
EP (1) | EP3318111B1 (ja) |
JP (1) | JP2018530902A (ja) |
KR (1) | KR20180029233A (ja) |
CN (1) | CN107852821A (ja) |
CA (1) | CA2990278C (ja) |
TW (1) | TWI717364B (ja) |
WO (1) | WO2017004703A1 (ja) |
Citations (6)
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JP2004512642A (ja) * | 2000-10-16 | 2004-04-22 | セイコーエプソン株式会社 | エッチング方法(EtchingProcess) |
JP2008098552A (ja) * | 2006-10-16 | 2008-04-24 | Seiko Epson Corp | パターン形成方法 |
JP2009516380A (ja) * | 2005-11-17 | 2009-04-16 | インペリアル・カレッジ・イノベーションズ・リミテッド | 薄膜をパターニングする方法 |
JP2010062391A (ja) * | 2008-09-04 | 2010-03-18 | Fuji Xerox Co Ltd | 半導体トランジスタ素子の製造方法、及び半導体トランジスタ素子 |
US20110094774A1 (en) * | 2009-10-23 | 2011-04-28 | Electronics And Telecommunications Research Institute | Multi-layer interconnection structure manufacturing method thereof |
WO2014072016A1 (en) * | 2012-11-08 | 2014-05-15 | Merck Patent Gmbh | Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith |
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CA2019046C (en) | 1989-06-16 | 1998-05-12 | Satoshi Okazaki | Method of printing fine patterns |
JPH07273009A (ja) | 1994-03-31 | 1995-10-20 | Toppan Printing Co Ltd | 厚膜パターンの製造方法 |
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2016
- 2016-06-30 JP JP2017568350A patent/JP2018530902A/ja not_active Ceased
- 2016-06-30 CN CN201680039588.9A patent/CN107852821A/zh active Pending
- 2016-06-30 KR KR1020187003056A patent/KR20180029233A/ko unknown
- 2016-06-30 EP EP16820594.6A patent/EP3318111B1/en active Active
- 2016-06-30 WO PCT/CA2016/050768 patent/WO2017004703A1/en active Application Filing
- 2016-06-30 US US15/740,550 patent/US10125285B2/en active Active
- 2016-06-30 CA CA2990278A patent/CA2990278C/en active Active
- 2016-07-01 TW TW105120939A patent/TWI717364B/zh not_active IP Right Cessation
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WO2014072016A1 (en) * | 2012-11-08 | 2014-05-15 | Merck Patent Gmbh | Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith |
Also Published As
Publication number | Publication date |
---|---|
CA2990278C (en) | 2024-02-13 |
US10125285B2 (en) | 2018-11-13 |
WO2017004703A1 (en) | 2017-01-12 |
US20180187036A1 (en) | 2018-07-05 |
EP3318111B1 (en) | 2023-10-04 |
TW201707073A (zh) | 2017-02-16 |
EP3318111A4 (en) | 2019-03-06 |
EP3318111A1 (en) | 2018-05-09 |
KR20180029233A (ko) | 2018-03-20 |
CA2990278A1 (en) | 2017-01-12 |
TWI717364B (zh) | 2021-02-01 |
CN107852821A (zh) | 2018-03-27 |
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