JP2018529219A5 - - Google Patents
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- Publication number
- JP2018529219A5 JP2018529219A5 JP2018501206A JP2018501206A JP2018529219A5 JP 2018529219 A5 JP2018529219 A5 JP 2018529219A5 JP 2018501206 A JP2018501206 A JP 2018501206A JP 2018501206 A JP2018501206 A JP 2018501206A JP 2018529219 A5 JP2018529219 A5 JP 2018529219A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- ceria
- hydroxamic acid
- substituted
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 47
- 239000002245 particle Substances 0.000 claims description 38
- 238000005498 polishing Methods 0.000 claims description 37
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 33
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 33
- NEAQRZUHTPSBBM-UHFFFAOYSA-N 2-hydroxy-3,3-dimethyl-7-nitro-4h-isoquinolin-1-one Chemical compound C1=C([N+]([O-])=O)C=C2C(=O)N(O)C(C)(C)CC2=C1 NEAQRZUHTPSBBM-UHFFFAOYSA-N 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 239000012736 aqueous medium Substances 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- HBROZNQEVUILML-UHFFFAOYSA-N salicylhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1O HBROZNQEVUILML-UHFFFAOYSA-N 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 6
- 125000005343 heterocyclic alkyl group Chemical group 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229940081066 picolinic acid Drugs 0.000 claims description 3
- -1 2-hydroxyphenyl Chemical group 0.000 claims description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 239000005360 phosphosilicate glass Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims 4
- 125000002373 5 membered heterocyclic group Chemical group 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229920006395 saturated elastomer Polymers 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562191824P | 2015-07-13 | 2015-07-13 | |
| US62/191,824 | 2015-07-13 | ||
| PCT/US2016/041887 WO2017011451A1 (en) | 2015-07-13 | 2016-07-12 | Methods and compositions for processing dielectric substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018529219A JP2018529219A (ja) | 2018-10-04 |
| JP2018529219A5 true JP2018529219A5 (OSRAM) | 2019-07-25 |
| JP6879995B2 JP6879995B2 (ja) | 2021-06-02 |
Family
ID=57757573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018501206A Active JP6879995B2 (ja) | 2015-07-13 | 2016-07-12 | 誘電体基板を加工するための方法及び組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10029345B2 (OSRAM) |
| EP (2) | EP3323142B1 (OSRAM) |
| JP (1) | JP6879995B2 (OSRAM) |
| KR (1) | KR102690419B1 (OSRAM) |
| CN (1) | CN107851568B (OSRAM) |
| TW (1) | TWI626280B (OSRAM) |
| WO (1) | WO2017011451A1 (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3344716A4 (en) * | 2015-09-03 | 2019-04-10 | Cabot Microelectronics Corporation | METHODS AND COMPOSITIONS FOR TREATING DIELECTRIC SUBSTRATE |
| KR101823083B1 (ko) * | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물 |
| TWI673357B (zh) * | 2016-12-14 | 2019-10-01 | 美商卡博特微電子公司 | 自化學機械平坦化基板移除殘留物之組合物及方法 |
| CN110520493B (zh) * | 2017-04-17 | 2022-11-22 | Cmc材料股份有限公司 | 自停止性抛光组合物及用于块状氧化物平坦化的方法 |
| CN109251673A (zh) * | 2017-07-13 | 2019-01-22 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251676B (zh) * | 2017-07-13 | 2021-07-30 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251672B (zh) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251674B (zh) * | 2017-07-13 | 2021-12-17 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| JP6985116B2 (ja) * | 2017-11-17 | 2021-12-22 | 信越化学工業株式会社 | 合成石英ガラス基板用の研磨剤及び合成石英ガラス基板の研磨方法 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| JP7326048B2 (ja) * | 2018-09-28 | 2023-08-15 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| KR102241941B1 (ko) * | 2018-12-28 | 2021-04-20 | 주식회사 케이씨텍 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 그를 이용한 연마 방법 |
| TWI826878B (zh) * | 2020-12-21 | 2023-12-21 | 美商Ｃｍｃ材料有限責任公司 | 用於高拓樸選擇性的自停止性拋光組合物與方法 |
| CN114350264B (zh) * | 2022-02-18 | 2023-06-02 | 河北工业大学 | 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法 |
| US20250297135A1 (en) * | 2024-03-25 | 2025-09-25 | Entegris, Inc. | Ceria and hydroxamic acid cmp composition |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| JP3496585B2 (ja) * | 1999-08-18 | 2004-02-16 | 日立化成工業株式会社 | 基板の研磨方法 |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| JP2004297035A (ja) * | 2003-03-13 | 2004-10-21 | Hitachi Chem Co Ltd | 研磨剤、研磨方法及び電子部品の製造方法 |
| US7931714B2 (en) * | 2007-10-08 | 2011-04-26 | Uwiz Technology Co., Ltd. | Composition useful to chemical mechanical planarization of metal |
| US7955520B2 (en) | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| US8435421B2 (en) | 2007-11-27 | 2013-05-07 | Cabot Microelectronics Corporation | Metal-passivating CMP compositions and methods |
| US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
| WO2012032467A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
| SG11201606187RA (en) * | 2010-09-08 | 2016-09-29 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| JP2012069785A (ja) * | 2010-09-24 | 2012-04-05 | Fujimi Inc | 研磨用組成物および研磨方法 |
| SG191909A1 (en) * | 2011-01-11 | 2013-08-30 | Cabot Microelectronics Corp | Metal-passivating cmp compositions and methods |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| US9340706B2 (en) * | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
-
2016
- 2016-07-12 WO PCT/US2016/041887 patent/WO2017011451A1/en not_active Ceased
- 2016-07-12 KR KR1020187003882A patent/KR102690419B1/ko active Active
- 2016-07-12 US US15/207,973 patent/US10029345B2/en active Active
- 2016-07-12 EP EP16825032.2A patent/EP3323142B1/en active Active
- 2016-07-12 CN CN201680041504.5A patent/CN107851568B/zh active Active
- 2016-07-12 JP JP2018501206A patent/JP6879995B2/ja active Active
- 2016-07-12 EP EP24157517.4A patent/EP4345142A3/en active Pending
- 2016-07-13 TW TW105122097A patent/TWI626280B/zh active
-
2018
- 2018-06-26 US US16/018,281 patent/US10639766B2/en active Active
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