JP2018517843A - 方法及びコーティング設備 - Google Patents
方法及びコーティング設備 Download PDFInfo
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- JP2018517843A JP2018517843A JP2017556544A JP2017556544A JP2018517843A JP 2018517843 A JP2018517843 A JP 2018517843A JP 2017556544 A JP2017556544 A JP 2017556544A JP 2017556544 A JP2017556544 A JP 2017556544A JP 2018517843 A JP2018517843 A JP 2018517843A
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- foil structure
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- foil
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- 238000000576 coating method Methods 0.000 title claims abstract description 199
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- 239000010937 tungsten Substances 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
更に含んでもよい。
(Ti、Cr、Al、Cu、Ni、Hf、Zr、Ta、V、Fe、Mo及び/又はWを含む)少なくとも一つの追加的な金属層、すなわち、例えば緩衝層の形態の一つ又はそれ以上の追加的な金属層の形成、
・それは、約10nmから約300nmまでの範囲内の厚さを有する、
・少なくとも一つの追加的な金属層の形成は、EB‐PVD及び/又はスパッタリングを使用して(例えば用いて)実行される、且つ
・少なくとも一つの追加的な金属層の形成は、任意的に、プラズマ強化、箔構造体のイオン衝撃、蒸気のプラズマ活性化又は基板加熱を使用して実行される;
例えば緩衝層の形態及び/又は保護層の形態の、少なくとも一つの金属‐炭素勾配層の形成;
・それは、約10nmから約600nmまでの範囲内の厚さを有する、
・(Ti、Cr、Al、Cu、Ni、Hf、Zr、Ta、V、Fe、Mo及び/又はWを含む)その金属副層及び炭素副層は、約10nmから約300nmまでの範囲内の厚さをそれぞれ有する、
・金属‐炭素勾配層の形成は、EB‐PVD及び/又はスパッタリングを使用して(例えば用いて)実行される、
・また、金属‐炭素勾配層の形成は、任意的に、プラズマ強化、箔構造体のイオン衝撃、蒸気のプラズマ活性化及び/又は基板加熱を使用して実行される。
・EB‐PVDを使用した、箔構造体のコーティング、例えば、少なくとも一つの層(すなわち、一つ、一つ以上又は全ての層)の形成(例えば堆積);
・スパッタリングを使用した、箔構造体のコーティング、例えば、少なくとも一つの層(すなわち、一つ、一つ以上又は全ての層)の形成(例えば堆積);
・スパッタリングを使用し、且つ基板加熱を使用した、箔構造体のコーティング、例えば、少なくとも一つの層(すなわち、一つ、一つ以上又は全ての層)の形成(例えば堆積);
・EB‐PVDを使用し、且つ蒸気のプラズマ活性化、イオン衝撃又は基板加熱を使用した(すなわち、組み合わせた)、箔構造体のコーティング、例えば、少なくとも一つの層(すなわち、一つ、一つ以上又は全ての層)の形成(例えば堆積);
・EB‐PVDを使用し、且つイオン衝撃を使用し、且つ基板加熱を使用した、箔構造体のコーティング、例えば、少なくとも一つの層(すなわち、一つ、一つ以上又は全ての層)の形成(例えば堆積);
・(a)コーティング中の材料蒸気の混合(例えばイオン混合を用いた、静的又は動的な同時蒸着(コデポジション))、及び/又は(b)例えば第二層の形成中又は形成後(すなわち第二のコーティングステップの間又は後)の、箔構造体の中への熱入力を使用した、すなわち箔構造体又は少なくとも二つの層の加熱を用いた、散布(ディヒュージョン)、による、少なくとも二つの層の間の勾配(組成勾配)の形成;
・箔構造体のコーティング、例えば、少なくとも一つの層(例えば第一層、第二層及び/又は接合層)の形成であり、以下の群からの少なくとも一つの金属を使用する:Ti、Cr、Al、Cu、Ni、Hf、Zr、Ta、V、Fe、Mo、W;且つ/或いは、この群からの少なくとも一つの金属を含む、例えば、実質的な成分として含む(すなわち、それに基づく)合金を使用する;
・箔構造体のコーティング、例えば、少なくとも一つの層(例えば第一層、第二層及び/又は接合層)の形成であり、以下の群からの少なくとも一つの導電性金属窒化物(金属と窒素(N)の化合物)を使用する:TiN、TiNx、CrN、Cr2N、CrNx、NbN、NbNx、NbCrN、NbCrxNy;
・箔構造体のコーティング、例えば、少なくとも一つの層(例えば第一層、第二層及び/又は接合層)の形成であり、以下の群からの少なくとも一つの導電性金属炭化物(金属と炭素(C)の化合物)を使用する:TiC、TiCx、CrCx;
・コーティングの前及び/又はコーティング中の基板加熱を使用した、箔構造体のコーティング。基板加熱を用いて、箔構造体が加熱されてもよい、すなわち、箔温度が設定されてもよい;
・基板加熱のために熱放射を使用した、箔構造体のコーティング。基板加熱を用いて、箔構造体が加熱されてもよい、すなわち、箔温度が設定されてもよい;
・基板加熱のために電子衝撃(すなわち、例えば、電子ビームの使用)を使用した、箔構造体のコーティング。基板加熱を用いて、箔構造体が加熱されてもよい、すなわち、箔温度が設定されてもよい;
・基板加熱のためにイオン衝撃(すなわち、例えば、イオンビームの使用)を使用した、箔構造体のコーティング。基板加熱を用いて、箔構造体が加熱されてもよい、すなわち、箔温度が設定されてもよい;
・箔温度(基板温度とも呼ばれ得る)、すなわち、約100℃から約500℃までの範囲内の箔構造体の温度を使用した、箔構造体のコーティング;
・約150℃から約450℃までの範囲内の箔温度を使用した、箔構造体のコーティング;
・約200℃から約300℃までの範囲内の箔温度を使用した、箔構造体のコーティング;
図1Bは、様々な実施形態によるプロセス100bを模式的な流れ図で示す。
Claims (13)
- ・真空室内のコーティング領域内に箔構造体を搬送するステップであり、前記箔構造体は、40μmよりも小さい厚さを有する、ステップ;及び
・気体のコーティング材料を使用して、保護層で前記箔構造体をコーティングするステップ;を含み、
・前記保護層は、連続的な炭素微細構造を有する、
プロセス。 - ・前記箔構造体は、少なくとも一つのポリマー及び少なくとも一つの金属の薄片を含む;又は、
・前記箔構造体は、金属によって形成される;若しくは
・前記箔構造体は、ポリマーによって形成される、
請求項1に記載のプロセス。 - 当該プロセスは:
金属の面が形成されるように、前記箔構造体の前記金属を少なくとも部分的に露出させるために、前記箔構造体の表層を除去するステップ、
を更に含む、請求項2に記載のプロセス。 - 前記気体のコーティング材料は、金属又は半金属を含む、請求項1乃至3のいずれか一項に記載のプロセス。
- 当該プロセスは:
・更なる気体のコーティング材料を使用して前記箔構造体をコーティングするステップ;を更に含み、
・第一層は、前記気体のコーティング材料を使用して形成され、第二層は、前記更なる気体のコーティング材料を使用して形成され;且つ/或いは
・接合層は、前記気体のコーティング材料及び前記更なる気体のコーティング材料が少なくとも部分的に互いに混合されて、前記気体のコーティング材料及び前記更なる気体のコーティング材料を使用して形成される、
請求項1乃至4のいずれか一項に記載のプロセス。 - 前記第二層は、前記第一層と前記箔構造体との間に配置され;且つ/或いは
前記第二層は、金属炭化物、金属窒化物及び/又は金属を含む、
請求項5に記載のプロセス。 - 当該プロセスは:
前記コーティングが構造的に変更されるように、前記コーティングを加熱するためのエネルギーパルスを発生させるステップを更に含む、請求項1乃至6のいずれか一項に記載のプロセス。 - 前記連続的な炭素微細構造は、前記箔構造体の少なくとも過半を覆い;且つ/或いは
前記連続的な炭素微細構造は、前記箔構造体に対して強い化学結合を有する、
請求項1乃至7のいずれか一項に記載のプロセス。 - 当該プロセスは:
・第一の化学ポテンシャルを有する第一電極を形成するために、前記箔構造体上に活物質を適用するステップ;
・前記第一電極を第二電極と組み立てるステップであり、前記第二電極は、第二の化学ポテンシャルを有する、ステップ;及び
・前記第一電極及び前記第二電極を封入するステップ、
を更に含む、請求項1乃至8のいずれか一項に記載のプロセス。 - エネルギー貯蔵装置における、請求項1乃至9のいずれか一項に記載のプロセスを用いて処理された箔構造体の使用。
- 第一の化学ポテンシャルを有する第一電極であり、該電極は:
・250μmより小さい厚さを有する、支持構造体;
・前記支持構造体上に配置された活物質であり、該活物質は、前記第一電極の前記第一の化学ポテンシャルを提供する、活物質;及び
・前記支持構造体と前記活物質との間に配置された保護層であり、該保護層は、前記支持構造体の少なくとも過半を覆う連続的な炭素微細構造を有し、且つ/或いは、該保護層は、前記支持構造体に対して強い化学結合を有する炭素微細構造を有する、保護層;
を更に有する、第一電極;
第二の化学ポテンシャルを有する第二電極;並びに
前記第一電極及び前記第二電極を取り囲む封入体、
を有する、エネルギー貯蔵装置。 - 前記支持構造体は、40μmよりも小さい厚さを有する箔構造体を有する、請求項11に記載のエネルギー貯蔵装置。
- ・少なくとも一つのコーティング領域を有する真空室;
・材料蒸気を用いて連続的な炭素微細構造が形成されるように、前記コーティング領域内に材料蒸気を生じさせるように構成された、少なくとも一つの材料蒸気源;
・一つのローラから、前記コーティング領域の中に導入される箔構造体を巻き戻すための巻き戻しローラ;
・ローラを形成するように、前記コーティング領域の外に搬送される前記箔構造体を巻き上げるための巻き上げローラ;
・搬送経路を規定する複数の搬送ローラであり、前記搬送経路に沿って、前記巻き戻しローラと前記巻き上げローラとの間で前記コーティング領域を通って前記箔構造体が搬送される、複数の搬送ローラ;並びに
・前記箔構造体の均一な前進移動を生じさせるように、前記複数の搬送ローラの少なくとも過半、前記巻き戻しローラ及び前記巻き上げローラにつながれている、駆動システム;
を有し、
・前記複数の搬送ローラの前記過半は、偏向ローラの回転の軸に対して直角に搬送経路を偏向させるための少なくとも一つの偏向ローラを有し、前記複数の搬送ローラの前記過半は、横断引き伸ばしローラの回転の軸に沿って前記箔構造体を引っ張るための少なくとも一つの横断引き伸ばしローラを有する、
コーティング設備。
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