JP2018517286A - ハイブリッド熱静電クランプ - Google Patents
ハイブリッド熱静電クランプ Download PDFInfo
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- JP2018517286A JP2018517286A JP2017553245A JP2017553245A JP2018517286A JP 2018517286 A JP2018517286 A JP 2018517286A JP 2017553245 A JP2017553245 A JP 2017553245A JP 2017553245 A JP2017553245 A JP 2017553245A JP 2018517286 A JP2018517286 A JP 2018517286A
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- dielectric layer
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- 238000000926 separation method Methods 0.000 abstract description 7
- 238000010884 ion-beam technique Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (15)
- 静電クランプであって、該静電クランプは、
第1の直径を備えた頂面を有するベースと、
第2の直径を備えた底面を有する上部誘電層であって、前記ベースの前記頂面の上に水平環状リングを創生するように、前記上部誘電層の前記底面は、前記ベースの前記頂面の上に配置され、前記第2の直径は前記第1の直径より小さい、上部誘電層と、
前記水平環状リングの上に配置される、LEDアレイと、を備える、静電クランプ。 - 前記上部誘電層は、第3の直径を備えた頂面を有し、前記第3の直径は前記第2の直径より大きい、請求項1に記載の静電クランプ。
- 前記上部誘電層は、第3の直径を備えた頂面を有し、前記第3の直径は前記第2の直径に等しい、請求項1に記載の静電クランプ。
- 前記LEDアレイは、前記上部誘電層に保持されるワークピースにより直ちに吸収される波長の光を放出する複数のLEDを備える、請求項1に記載の静電クランプ。
- 前記複数のLEDは、0.4μmと1.0μmとの間の波長の光を放出する、請求項4に記載の静電クランプ。
- 前記上部誘電層に保持されるワークピースの外縁の温度を調整するように、前記LEDアレイと通信するコントローラを、さらに、備える、請求項1に記載の静電クランプ。
- 前記LEDアレイのLEDは、前記上部誘電層に保持されるワークピースの外縁の方へ、角度を変えられる、請求項1に記載の静電クランプ。
- 静電クランプであって、該静電クランプは、
頂面及び底面を有する上部誘電層と、
該上部誘電層を収容できるように形成される凹部を有するベースであって、該ベースは、前記上部誘電層の前記底面と接触する凹部頂面と、前記上部誘電層を包囲し、前記上部誘電層の前記頂面より低い高さで配置される、環状頂面と、を有するベースと、
前記ベースの前記環状頂面の上に配置されるLEDアレイと、を備える、静電クランプ。 - 前記上部誘電層の前記頂面は第1の直径を有し、前記上部誘電層の前記底面は第2の直径を有し、前記第1の直径は前記第2の直径より大きい、請求項8に記載の静電クランプ。
- 前記上部誘電層の前記頂面は第1の直径を有し、前記上部誘電層の前記底面は第2の直径を有し、前記第1の直径は前記第2の直径に等しい、請求項8に記載の静電クランプ。
- 前記LEDアレイは、0.4μmと1.0μmとの間の波長の光を放出する複数のLEDを備える、請求項8に記載の静電クランプ。
- ワークピースの外縁の温度を調整するように、前記LEDアレイと通信するコントローラを、さらに、備える、請求項8に記載の静電クランプ。
- 静電クランプであって、該静電クランプは、
ベースと、
該ベースの上に配置される、上部誘電層と、
該上部誘電層の外縁の回りに配置される、円形リングと、
該円形リングの頂面の上に配置される、LEDアレイと、を備える、静電クランプ。 - 前記LEDアレイは、0.4μmと1.0μmとの間の波長の光を放出する複数のLEDを備える、請求項13に記載の静電クランプ。
- 前記上部誘電層は、ワークピースを支持するように構成され、張り出しを創生するように、前記ワークピースの直径は、前記上部誘電層の直径より大きく、前記円形リングの幅は、前記張り出しより小さい、請求項13に記載の静電クランプ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/688,000 US9633886B2 (en) | 2015-04-16 | 2015-04-16 | Hybrid thermal electrostatic clamp |
US14/688,000 | 2015-04-16 | ||
PCT/US2016/025998 WO2016168008A1 (en) | 2015-04-16 | 2016-04-05 | Hybrid thermal electrostatic clamp |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018517286A true JP2018517286A (ja) | 2018-06-28 |
JP2018517286A5 JP2018517286A5 (ja) | 2019-05-09 |
JP6673937B2 JP6673937B2 (ja) | 2020-04-01 |
Family
ID=57127003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017553245A Active JP6673937B2 (ja) | 2015-04-16 | 2016-04-05 | 静電クランプ |
Country Status (6)
Country | Link |
---|---|
US (1) | US9633886B2 (ja) |
JP (1) | JP6673937B2 (ja) |
KR (1) | KR102563837B1 (ja) |
CN (1) | CN107466423B (ja) |
TW (1) | TWI697063B (ja) |
WO (1) | WO2016168008A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110047796B (zh) * | 2018-01-16 | 2021-10-01 | 亿力鑫系统科技股份有限公司 | 承载盘 |
KR20220040804A (ko) | 2020-09-24 | 2022-03-31 | 삼성전자주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
WO2022103903A1 (en) * | 2020-11-11 | 2022-05-19 | Axcelis Technologies, Inc. | Hybrid high-temperature electrostatic clamp for improved workpiece temperature uniformity |
KR20240046906A (ko) * | 2021-08-18 | 2024-04-11 | 램 리써치 코포레이션 | 반도체 웨이퍼의 에지 영역의 복사 가열을 위한 장치들 |
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JP2010153734A (ja) * | 2008-12-26 | 2010-07-08 | Tokyo Electron Ltd | アニール装置およびアニール方法 |
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-
2015
- 2015-04-16 US US14/688,000 patent/US9633886B2/en active Active
-
2016
- 2016-04-01 TW TW105110467A patent/TWI697063B/zh active
- 2016-04-05 CN CN201680021719.0A patent/CN107466423B/zh active Active
- 2016-04-05 KR KR1020177032842A patent/KR102563837B1/ko active IP Right Grant
- 2016-04-05 WO PCT/US2016/025998 patent/WO2016168008A1/en active Application Filing
- 2016-04-05 JP JP2017553245A patent/JP6673937B2/ja active Active
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JP2002026115A (ja) * | 2000-04-19 | 2002-01-25 | Applied Materials Inc | 静電チャックのコンディショニング方法および装置 |
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JP2010153734A (ja) * | 2008-12-26 | 2010-07-08 | Tokyo Electron Ltd | アニール装置およびアニール方法 |
JP2011187752A (ja) * | 2010-03-09 | 2011-09-22 | Tokyo Electron Ltd | 加熱装置及びアニール装置 |
JP2012195463A (ja) * | 2011-03-16 | 2012-10-11 | Tokyo Electron Ltd | プラズマエッチング装置及びプラズマエッチング方法 |
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Also Published As
Publication number | Publication date |
---|---|
TWI697063B (zh) | 2020-06-21 |
TW201707108A (zh) | 2017-02-16 |
US9633886B2 (en) | 2017-04-25 |
US20160307786A1 (en) | 2016-10-20 |
KR20170137183A (ko) | 2017-12-12 |
CN107466423B (zh) | 2019-03-26 |
CN107466423A (zh) | 2017-12-12 |
KR102563837B1 (ko) | 2023-08-10 |
WO2016168008A1 (en) | 2016-10-20 |
JP6673937B2 (ja) | 2020-04-01 |
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