JP2018515927A5 - - Google Patents

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Publication number
JP2018515927A5
JP2018515927A5 JP2017558391A JP2017558391A JP2018515927A5 JP 2018515927 A5 JP2018515927 A5 JP 2018515927A5 JP 2017558391 A JP2017558391 A JP 2017558391A JP 2017558391 A JP2017558391 A JP 2017558391A JP 2018515927 A5 JP2018515927 A5 JP 2018515927A5
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Japan
Prior art keywords
field plate
trench
substrate
segment
forming
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JP2017558391A
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English (en)
Japanese (ja)
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JP2018515927A (ja
JP6919133B2 (ja
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Priority claimed from US14/706,927 external-priority patent/US9299830B1/en
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Publication of JP2018515927A5 publication Critical patent/JP2018515927A5/ja
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JP2017558391A 2015-05-07 2016-05-09 複数遮蔽トレンチゲートfet Active JP6919133B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/706,927 US9299830B1 (en) 2015-05-07 2015-05-07 Multiple shielding trench gate fet
US14/706,927 2015-05-07
PCT/US2016/031517 WO2016179598A1 (en) 2015-05-07 2016-05-09 Multiple shielding trench gate fet

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021009477A Division JP7279277B2 (ja) 2015-05-07 2021-01-25 複数遮蔽トレンチゲートfet

Publications (3)

Publication Number Publication Date
JP2018515927A JP2018515927A (ja) 2018-06-14
JP2018515927A5 true JP2018515927A5 (enExample) 2019-06-06
JP6919133B2 JP6919133B2 (ja) 2021-08-18

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JP2017558391A Active JP6919133B2 (ja) 2015-05-07 2016-05-09 複数遮蔽トレンチゲートfet
JP2021009477A Active JP7279277B2 (ja) 2015-05-07 2021-01-25 複数遮蔽トレンチゲートfet

Family Applications After (1)

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JP2021009477A Active JP7279277B2 (ja) 2015-05-07 2021-01-25 複数遮蔽トレンチゲートfet

Country Status (4)

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US (3) US9299830B1 (enExample)
JP (2) JP6919133B2 (enExample)
CN (1) CN107710418B (enExample)
WO (1) WO2016179598A1 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9685608B2 (en) * 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
TWI599041B (zh) * 2015-11-23 2017-09-11 節能元件控股有限公司 具有底部閘極之金氧半場效電晶體功率元件及其製作方法
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) * 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
CN106847880B (zh) * 2017-01-23 2019-11-26 矽力杰半导体技术(杭州)有限公司 一种半导体器件及其制备方法
DE102018104944B4 (de) 2017-06-30 2024-12-12 Parabellum Strategic Opportunities Fund Llc Halbleiter-Bauelement mit einer Auskleidungsschicht mit einem konfigurierten Profil und Verfahren zu dessen Herstellung
CN107871787B (zh) 2017-10-11 2021-10-12 矽力杰半导体技术(杭州)有限公司 一种制造沟槽mosfet的方法
EP3474314A1 (en) * 2017-10-20 2019-04-24 Infineon Technologies Austria AG Semiconductor device and method for manufacturing a semiconductor method
CN109887989A (zh) * 2017-12-06 2019-06-14 深圳尚阳通科技有限公司 一种屏蔽栅功率器件及制造方法
CN109935625A (zh) * 2017-12-15 2019-06-25 深圳尚阳通科技有限公司 一种肖特基二极管器件及制造方法
CN111771286A (zh) * 2018-03-21 2020-10-13 德克萨斯仪器股份有限公司 具有用于功率mosfet的多晶硅场板的半导体器件
CN108400094B (zh) * 2018-04-19 2020-12-25 济南安海半导体有限公司 屏蔽栅场效应晶体管及其制造方法(锤形)
CN108598165B (zh) * 2018-04-19 2020-12-25 济南安海半导体有限公司 屏蔽栅场效应晶体管及其制造方法(柱形)
CN108389837B (zh) * 2018-05-08 2023-06-30 长鑫存储技术有限公司 晶体管结构、存储器结构及其制备方法
CN109119468B (zh) * 2018-08-29 2021-11-23 电子科技大学 一种屏蔽栅dmos器件
EP3624201B1 (en) * 2018-09-17 2022-11-02 Infineon Technologies Austria AG Transistor device
US10770584B2 (en) 2018-11-09 2020-09-08 Texas Instruments Incorporated Drain extended transistor with trench gate
US11177253B2 (en) 2018-11-09 2021-11-16 Texas Instruments Incorporated Transistor with integrated capacitor
US11658241B2 (en) * 2018-12-31 2023-05-23 Texas Instruments Incorporated Vertical trench gate MOSFET with integrated Schottky diode
WO2020198910A1 (en) * 2019-03-29 2020-10-08 Texas Instruments Incorporated Trench shield isolation layer
CN110047759A (zh) * 2019-04-28 2019-07-23 矽力杰半导体技术(杭州)有限公司 沟槽型mosfet器件制造方法
US12040181B2 (en) 2019-05-01 2024-07-16 Lam Research Corporation Modulated atomic layer deposition
CN110047935B (zh) * 2019-05-09 2021-04-27 中国科学院微电子研究所 一种双分裂栅功率mosfet器件及其制备方法
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
US11217690B2 (en) * 2019-09-16 2022-01-04 Infineon Technologies Austria Ag Trench field electrode termination structure for transistor devices
CN112652652A (zh) * 2019-10-12 2021-04-13 华润微电子(重庆)有限公司 沟槽型场效应晶体管结构及其制备方法
CN110739347B (zh) * 2019-10-21 2023-10-20 上海华虹宏力半导体制造有限公司 沟槽栅半导体器件及其制造方法
JP7387501B2 (ja) * 2020-03-18 2023-11-28 株式会社東芝 半導体装置およびその制御方法
US11393907B2 (en) 2020-08-12 2022-07-19 Infineon Technologies Austria Ag Transistor device with buried field electrode connection
CN116157923A (zh) 2020-08-13 2023-05-23 德州仪器公司 包含横向绝缘体的半导体装置
CN112133627B (zh) * 2020-09-29 2022-06-17 上海华虹宏力半导体制造有限公司 屏蔽栅沟槽型器件的工艺方法
CN112309853A (zh) * 2020-11-12 2021-02-02 上海华虹宏力半导体制造有限公司 屏蔽栅极沟槽结构的制备方法
US11538925B2 (en) * 2020-12-11 2022-12-27 Applied Materials, Inc. Ion implantation to form step-oxide trench MOSFET
US20220223731A1 (en) * 2021-01-13 2022-07-14 Texas Instruments Incorporated Vertical trench gate fet with split gate
JP2022111450A (ja) * 2021-01-20 2022-08-01 株式会社東芝 半導体装置
TWI802305B (zh) * 2022-03-03 2023-05-11 力晶積成電子製造股份有限公司 半導體結構以及埋入式場板結構的製造方法
JP7748346B2 (ja) * 2022-09-16 2025-10-02 株式会社東芝 半導体装置
US12279455B2 (en) * 2022-09-18 2025-04-15 Vanguard International Semiconductor Corporation Semiconductor device and method of fabricating the same
CN116093146B (zh) * 2023-04-11 2024-02-20 江苏应能微电子股份有限公司 一种分段式分离栅sgt mosfet结构
EP4513568A1 (en) * 2023-08-21 2025-02-26 Nexperia B.V. Power semiconductor device and associated methods
CN118471799B (zh) * 2024-07-11 2024-12-03 芯联集成电路制造股份有限公司 一种屏蔽栅场效应晶体管及其制备方法、电子装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4073176B2 (ja) * 2001-04-02 2008-04-09 新電元工業株式会社 半導体装置およびその製造方法
JP4421144B2 (ja) * 2001-06-29 2010-02-24 株式会社東芝 半導体装置
CN103199017B (zh) * 2003-12-30 2016-08-03 飞兆半导体公司 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
US8097915B2 (en) 2005-05-31 2012-01-17 Qimonda Ag Semiconductor memory device
DE102005041358B4 (de) * 2005-08-31 2012-01-19 Infineon Technologies Austria Ag Feldplatten-Trenchtransistor sowie Verfahren zu dessen Herstellung
DE102005041285B4 (de) * 2005-08-31 2009-06-25 Infineon Technologies Ag Grabenstrukturhalbleitereinrichtung und Verfahren zu deren Herstellung
JP4728210B2 (ja) * 2006-12-12 2011-07-20 Okiセミコンダクタ株式会社 高耐圧縦型mosトランジスタ
US8420483B2 (en) 2007-01-09 2013-04-16 Maxpower Semiconductor, Inc. Method of manufacture for a semiconductor device
US8097916B2 (en) * 2007-07-23 2012-01-17 Infineon Technologies Austria Ag Method for insulating a semiconducting material in a trench from a substrate
US8497549B2 (en) * 2007-08-21 2013-07-30 Fairchild Semiconductor Corporation Method and structure for shielded gate trench FET
US8039877B2 (en) * 2008-09-09 2011-10-18 Fairchild Semiconductor Corporation (110)-oriented p-channel trench MOSFET having high-K gate dielectric
JP5195357B2 (ja) * 2008-12-01 2013-05-08 トヨタ自動車株式会社 半導体装置
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8187939B2 (en) * 2009-09-23 2012-05-29 Alpha & Omega Semiconductor Incorporated Direct contact in trench with three-mask shield gate process
US8198678B2 (en) * 2009-12-09 2012-06-12 Infineon Technologies Austria Ag Semiconductor device with improved on-resistance
WO2011087994A2 (en) 2010-01-12 2011-07-21 Maxpower Semiconductor Inc. Devices, components and methods combining trench field plates with immobile electrostatic charge
US8786012B2 (en) * 2010-07-26 2014-07-22 Infineon Technologies Austria Ag Power semiconductor device and a method for forming a semiconductor device
US8466513B2 (en) * 2011-06-13 2013-06-18 Semiconductor Components Industries, Llc Semiconductor device with enhanced mobility and method
US8889532B2 (en) * 2011-06-27 2014-11-18 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device and structure
US8697560B2 (en) * 2012-02-24 2014-04-15 Semiconductor Components Industries, Llc Process of forming an electronic device including a trench and a conductive structure therein
US8836024B2 (en) * 2012-03-20 2014-09-16 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein having a contact within a Schottky region and a process of forming the same
JP2013258327A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 半導体装置及びその製造方法
US8748976B1 (en) 2013-03-06 2014-06-10 Texas Instruments Incorporated Dual RESURF trench field plate in vertical MOSFET
US9018700B2 (en) * 2013-03-14 2015-04-28 Fairchild Semiconductor Corporation Direct-drain trench FET with source and drain isolation
KR101828495B1 (ko) * 2013-03-27 2018-02-12 삼성전자주식회사 평탄한 소스 전극을 가진 반도체 소자
KR101934893B1 (ko) * 2013-03-27 2019-01-03 삼성전자 주식회사 그루브 소스 컨택 영역을 가진 반도체 소자의 제조 방법
US9450082B2 (en) * 2014-06-09 2016-09-20 Texas Instruments Incorporated Integrated termination for multiple trench field plate

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