JP2018513517A5 - - Google Patents

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Publication number
JP2018513517A5
JP2018513517A5 JP2017546972A JP2017546972A JP2018513517A5 JP 2018513517 A5 JP2018513517 A5 JP 2018513517A5 JP 2017546972 A JP2017546972 A JP 2017546972A JP 2017546972 A JP2017546972 A JP 2017546972A JP 2018513517 A5 JP2018513517 A5 JP 2018513517A5
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JP
Japan
Prior art keywords
mtj
mtj element
value
elements
access transistor
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Pending
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JP2017546972A
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English (en)
Japanese (ja)
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JP2018513517A (ja
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Priority claimed from US14/645,213 external-priority patent/US9437272B1/en
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Publication of JP2018513517A publication Critical patent/JP2018513517A/ja
Publication of JP2018513517A5 publication Critical patent/JP2018513517A5/ja
Pending legal-status Critical Current

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JP2017546972A 2015-03-11 2016-02-01 サブアレイを有するマルチビットスピントルクトランスファ磁気抵抗ランダムアクセスメモリ Pending JP2018513517A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/645,213 2015-03-11
US14/645,213 US9437272B1 (en) 2015-03-11 2015-03-11 Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays
PCT/US2016/015932 WO2016144436A2 (en) 2015-03-11 2016-02-01 Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays

Publications (2)

Publication Number Publication Date
JP2018513517A JP2018513517A (ja) 2018-05-24
JP2018513517A5 true JP2018513517A5 (enExample) 2019-02-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017546972A Pending JP2018513517A (ja) 2015-03-11 2016-02-01 サブアレイを有するマルチビットスピントルクトランスファ磁気抵抗ランダムアクセスメモリ

Country Status (5)

Country Link
US (1) US9437272B1 (enExample)
EP (1) EP3268966A2 (enExample)
JP (1) JP2018513517A (enExample)
CN (1) CN107430883B (enExample)
WO (1) WO2016144436A2 (enExample)

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US10331367B2 (en) * 2017-04-03 2019-06-25 Gyrfalcon Technology Inc. Embedded memory subsystems for a CNN based processing unit and methods of making
US10534996B2 (en) 2017-04-03 2020-01-14 Gyrfalcon Technology Inc. Memory subsystem in CNN based digital IC for artificial intelligence
US10331368B2 (en) 2017-04-03 2019-06-25 Gyrfalcon Technology Inc. MLC based magnetic random access memory used in CNN based digital IC for AI
US10296824B2 (en) 2017-04-03 2019-05-21 Gyrfalcon Technology Inc. Fabrication methods of memory subsystem used in CNN based digital IC for AI
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US10546234B2 (en) 2017-04-03 2020-01-28 Gyrfalcon Technology Inc. Buffer memory architecture for a CNN based processing unit and creation methods thereof
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US11968843B2 (en) 2018-06-28 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Processing core and MRAM memory unit integrated on a single chip
US10559338B2 (en) * 2018-07-06 2020-02-11 Spin Memory, Inc. Multi-bit cell read-out techniques
US10692569B2 (en) 2018-07-06 2020-06-23 Spin Memory, Inc. Read-out techniques for multi-bit cells
US10559357B1 (en) * 2018-08-06 2020-02-11 Lattice Semiconductor Corporation Memory circuit having non-volatile memory cell and methods of using
US10847198B2 (en) * 2018-11-01 2020-11-24 Spin Memory, Inc. Memory system utilizing heterogeneous magnetic tunnel junction types in a single chip
KR102576209B1 (ko) * 2018-12-03 2023-09-07 삼성전자주식회사 스핀-궤도 토크 라인을 갖는 반도체 소자
US10971681B2 (en) * 2018-12-05 2021-04-06 Spin Memory, Inc. Method for manufacturing a data recording system utilizing heterogeneous magnetic tunnel junction types in a single chip
US10868234B2 (en) * 2018-12-12 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage device
JP7211273B2 (ja) * 2019-06-17 2023-01-24 株式会社アイシン 半導体記憶装置
US11514962B2 (en) * 2020-11-12 2022-11-29 International Business Machines Corporation Two-bit magnetoresistive random-access memory cell
US11844284B2 (en) * 2021-06-29 2023-12-12 International Business Machines Corporation On-chip integration of a high-efficiency and a high-retention inverted wide-base double magnetic tunnel junction device
CN116312669B (zh) * 2021-12-20 2025-08-01 长鑫存储技术有限公司 存储阵列、存储单元及其数据读写方法
US12437791B2 (en) 2023-07-11 2025-10-07 Honeywell International Inc. Magneto resistive memory for monolithic data processing

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