CN107430883B - 使用串联磁性隧道结的多位自旋转移矩磁阻随机存取存储器stt-mram - Google Patents

使用串联磁性隧道结的多位自旋转移矩磁阻随机存取存储器stt-mram Download PDF

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CN107430883B
CN107430883B CN201680014624.6A CN201680014624A CN107430883B CN 107430883 B CN107430883 B CN 107430883B CN 201680014624 A CN201680014624 A CN 201680014624A CN 107430883 B CN107430883 B CN 107430883B
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CN107430883A (zh
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Y·陆
X·李
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893—Caches characterised by their organisation or structure
    • G06F12/0897—Caches characterised by their organisation or structure with two or more cache hierarchy levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201680014624.6A 2015-03-11 2016-02-01 使用串联磁性隧道结的多位自旋转移矩磁阻随机存取存储器stt-mram Active CN107430883B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/645,213 2015-03-11
US14/645,213 US9437272B1 (en) 2015-03-11 2015-03-11 Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays
PCT/US2016/015932 WO2016144436A2 (en) 2015-03-11 2016-02-01 Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays

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CN107430883A CN107430883A (zh) 2017-12-01
CN107430883B true CN107430883B (zh) 2021-03-12

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US (1) US9437272B1 (enExample)
EP (1) EP3268966A2 (enExample)
JP (1) JP2018513517A (enExample)
CN (1) CN107430883B (enExample)
WO (1) WO2016144436A2 (enExample)

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US10534996B2 (en) 2017-04-03 2020-01-14 Gyrfalcon Technology Inc. Memory subsystem in CNN based digital IC for artificial intelligence
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US10331999B2 (en) * 2017-04-03 2019-06-25 Gyrfalcon Technology Inc. Memory subsystem in CNN based digital IC for artificial intelligence
US20190066746A1 (en) 2017-08-28 2019-02-28 Qualcomm Incorporated VARYING ENERGY BARRIERS OF MAGNETIC TUNNEL JUNCTIONS (MTJs) IN DIFFERENT MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) ARRAYS IN A SEMICONDUCTOR DIE TO FACILITATE USE OF MRAM FOR DIFFERENT MEMORY APPLICATIONS
JP6829172B2 (ja) 2017-09-20 2021-02-10 キオクシア株式会社 半導体記憶装置
US10403343B2 (en) * 2017-12-29 2019-09-03 Spin Memory, Inc. Systems and methods utilizing serial configurations of magnetic memory devices
US10803916B2 (en) 2017-12-29 2020-10-13 Spin Memory, Inc. Methods and systems for writing to magnetic memory devices utilizing alternating current
US11968843B2 (en) 2018-06-28 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Processing core and MRAM memory unit integrated on a single chip
US10559338B2 (en) * 2018-07-06 2020-02-11 Spin Memory, Inc. Multi-bit cell read-out techniques
US10692569B2 (en) 2018-07-06 2020-06-23 Spin Memory, Inc. Read-out techniques for multi-bit cells
US10559357B1 (en) * 2018-08-06 2020-02-11 Lattice Semiconductor Corporation Memory circuit having non-volatile memory cell and methods of using
US10847198B2 (en) * 2018-11-01 2020-11-24 Spin Memory, Inc. Memory system utilizing heterogeneous magnetic tunnel junction types in a single chip
KR102576209B1 (ko) * 2018-12-03 2023-09-07 삼성전자주식회사 스핀-궤도 토크 라인을 갖는 반도체 소자
US10971681B2 (en) * 2018-12-05 2021-04-06 Spin Memory, Inc. Method for manufacturing a data recording system utilizing heterogeneous magnetic tunnel junction types in a single chip
US10868234B2 (en) * 2018-12-12 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage device
JP7211273B2 (ja) * 2019-06-17 2023-01-24 株式会社アイシン 半導体記憶装置
US11514962B2 (en) * 2020-11-12 2022-11-29 International Business Machines Corporation Two-bit magnetoresistive random-access memory cell
US11844284B2 (en) * 2021-06-29 2023-12-12 International Business Machines Corporation On-chip integration of a high-efficiency and a high-retention inverted wide-base double magnetic tunnel junction device
CN116312669B (zh) * 2021-12-20 2025-08-01 长鑫存储技术有限公司 存储阵列、存储单元及其数据读写方法
US12437791B2 (en) 2023-07-11 2025-10-07 Honeywell International Inc. Magneto resistive memory for monolithic data processing

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CN102282621A (zh) * 2009-01-30 2011-12-14 高通股份有限公司 自旋转移力矩磁阻随机存取存储器内的位线电压控制
CN102334166A (zh) * 2009-03-02 2012-01-25 高通股份有限公司 降低自旋力矩转移磁阻性随机存取存储器(stt-mram)中的源极负载效应
CN102388358A (zh) * 2011-09-30 2012-03-21 华为技术有限公司 在混合存储环境下配置存储设备的方法和系统
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EP3268966A2 (en) 2018-01-17
US20160267957A1 (en) 2016-09-15
JP2018513517A (ja) 2018-05-24
US9437272B1 (en) 2016-09-06
WO2016144436A3 (en) 2016-11-03
WO2016144436A2 (en) 2016-09-15
CN107430883A (zh) 2017-12-01

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