JP2018512475A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2018512475A5 JP2018512475A5 JP2017546138A JP2017546138A JP2018512475A5 JP 2018512475 A5 JP2018512475 A5 JP 2018512475A5 JP 2017546138 A JP2017546138 A JP 2017546138A JP 2017546138 A JP2017546138 A JP 2017546138A JP 2018512475 A5 JP2018512475 A5 JP 2018512475A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- chemical mechanical
- mechanical polishing
- ppm
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims description 57
- 239000000126 substance Substances 0.000 claims description 26
- 239000000654 additive Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 11
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 11
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 10
- 229920006317 cationic polymer Polymers 0.000 claims description 10
- 229920000858 Cyclodextrin Polymers 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 229920002472 Starch Polymers 0.000 claims description 7
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 7
- 229920001577 copolymer Polymers 0.000 claims description 7
- 235000019698 starch Nutrition 0.000 claims description 7
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- 125000002091 cationic group Chemical group 0.000 claims description 6
- 150000001204 N-oxides Chemical class 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000008107 starch Substances 0.000 claims description 5
- 229940097362 cyclodextrins Drugs 0.000 claims description 4
- FHYMLBVGNFVFBT-UHFFFAOYSA-N Picolinic acid N-oxide Chemical compound OC(=O)C1=CC=CC=[N+]1[O-] FHYMLBVGNFVFBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 150000001412 amines Chemical group 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- SHHGHQXPESZCQA-UHFFFAOYSA-N oxiran-2-ylmethylsilicon Chemical compound [Si]CC1CO1 SHHGHQXPESZCQA-UHFFFAOYSA-N 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 3
- 229920001450 Alpha-Cyclodextrin Polymers 0.000 claims description 2
- 239000001116 FEMA 4028 Substances 0.000 claims description 2
- HFHDHCJBZVLPGP-RWMJIURBSA-N alpha-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO HFHDHCJBZVLPGP-RWMJIURBSA-N 0.000 claims description 2
- 229940043377 alpha-cyclodextrin Drugs 0.000 claims description 2
- WHGYBXFWUBPSRW-FOUAGVGXSA-N beta-cyclodextrin Chemical compound OC[C@H]([C@H]([C@@H]([C@H]1O)O)O[C@H]2O[C@@H]([C@@H](O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O[C@H]3O[C@H](CO)[C@H]([C@@H]([C@H]3O)O)O3)[C@H](O)[C@H]2O)CO)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@@H]3O[C@@H]1CO WHGYBXFWUBPSRW-FOUAGVGXSA-N 0.000 claims description 2
- 235000011175 beta-cyclodextrine Nutrition 0.000 claims description 2
- 229960004853 betadex Drugs 0.000 claims description 2
- 229920003145 methacrylic acid copolymer Polymers 0.000 claims description 2
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 11
- 150000001735 carboxylic acids Chemical class 0.000 claims 7
- 125000000623 heterocyclic group Chemical group 0.000 claims 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 239000000178 monomer Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- -1 alcohol amines Chemical class 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 239000003002 pH adjusting agent Substances 0.000 claims 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- OSSNTDFYBPYIEC-UHFFFAOYSA-O 1-ethenylimidazole;hydron Chemical compound C=CN1C=C[NH+]=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-O 0.000 claims 1
- LNETULKMXZVUST-UHFFFAOYSA-N 1-naphthoic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1 LNETULKMXZVUST-UHFFFAOYSA-N 0.000 claims 1
- JTXUAHIMULPXKY-UHFFFAOYSA-N 3-trihydroxysilylpropan-1-amine Chemical compound NCCC[Si](O)(O)O JTXUAHIMULPXKY-UHFFFAOYSA-N 0.000 claims 1
- DWHJJLTXBKSHJG-UHFFFAOYSA-N 5-hydroxy-2-methylpent-2-enoic acid Chemical group OC(=O)C(C)=CCCO DWHJJLTXBKSHJG-UHFFFAOYSA-N 0.000 claims 1
- 238000001237 Raman spectrum Methods 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 1
- 150000003973 alkyl amines Chemical group 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000008365 aqueous carrier Substances 0.000 claims 1
- 239000001913 cellulose Substances 0.000 claims 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229940081066 picolinic acid Drugs 0.000 claims 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 claims 1
- 229940032147 starch Drugs 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 206010042135 Stomatitis necrotising Diseases 0.000 description 18
- 201000008585 noma Diseases 0.000 description 18
- 241000272525 Anas platyrhynchos Species 0.000 description 12
- 238000004587 chromatography analysis Methods 0.000 description 10
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 6
- 150000003222 pyridines Chemical class 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 2
- 235000010980 cellulose Nutrition 0.000 description 2
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/639,564 | 2015-03-05 | ||
| US14/639,564 US9505952B2 (en) | 2015-03-05 | 2015-03-05 | Polishing composition containing ceria abrasive |
| PCT/US2016/020261 WO2016140968A1 (en) | 2015-03-05 | 2016-03-01 | Polishing composition containing ceria abrasive |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018512475A JP2018512475A (ja) | 2018-05-17 |
| JP2018512475A5 true JP2018512475A5 (cg-RX-API-DMAC7.html) | 2019-03-22 |
| JP6748096B2 JP6748096B2 (ja) | 2020-08-26 |
Family
ID=56848507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017546138A Active JP6748096B2 (ja) | 2015-03-05 | 2016-03-01 | セリア研磨剤を含有する研磨組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9505952B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3265534B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6748096B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102650942B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN107427988B (cg-RX-API-DMAC7.html) |
| TW (1) | TWI580769B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2016140968A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| JP6545261B2 (ja) | 2014-10-17 | 2019-07-17 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 付加製造プロセスを使用する、複合材料特性を有するｃｍｐパッド構造 |
| KR102463863B1 (ko) * | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| US10618141B2 (en) | 2015-10-30 | 2020-04-14 | Applied Materials, Inc. | Apparatus for forming a polishing article that has a desired zeta potential |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| KR101823083B1 (ko) * | 2016-09-07 | 2018-01-30 | 주식회사 케이씨텍 | 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물 |
| TWI673357B (zh) | 2016-12-14 | 2019-10-01 | 美商卡博特微電子公司 | 自化學機械平坦化基板移除殘留物之組合物及方法 |
| IL271182B2 (en) | 2017-06-15 | 2023-03-01 | Rhodia Operations | Cerium-based particles |
| KR102336865B1 (ko) * | 2017-07-06 | 2021-12-09 | 오씨아이 주식회사 | 식각 조성물 및 이를 이용한 식각 방법 |
| CN109251674B (zh) * | 2017-07-13 | 2021-12-17 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN109251672B (zh) * | 2017-07-13 | 2022-02-18 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| US11471999B2 (en) * | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| US11072050B2 (en) | 2017-08-04 | 2021-07-27 | Applied Materials, Inc. | Polishing pad with window and manufacturing methods thereof |
| WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
| JP6916306B2 (ja) * | 2018-01-12 | 2021-08-11 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
| US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
| US11718767B2 (en) * | 2018-08-09 | 2023-08-08 | Versum Materials Us, Llc | Chemical mechanical planarization composition for polishing oxide materials and method of use thereof |
| CN112654655A (zh) | 2018-09-04 | 2021-04-13 | 应用材料公司 | 先进抛光垫配方 |
| WO2020066786A1 (ja) * | 2018-09-28 | 2020-04-02 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| JP7326048B2 (ja) * | 2018-09-28 | 2023-08-15 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| JP7209583B2 (ja) * | 2019-05-08 | 2023-01-20 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| KR102814738B1 (ko) * | 2019-08-06 | 2025-05-30 | 삼성디스플레이 주식회사 | 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치 |
| JP7512378B2 (ja) * | 2019-10-09 | 2024-07-08 | インテグリス・インコーポレーテッド | 湿式エッチング湿式エッチング組成物及び方法 |
| CN120365853A (zh) * | 2019-10-22 | 2025-07-25 | Cmc材料有限责任公司 | 自停止性的抛光组合物及方法 |
| US20210115302A1 (en) | 2019-10-22 | 2021-04-22 | Cmc Materials, Inc. | Composition and method for selective oxide cmp |
| US20240297049A1 (en) | 2019-10-24 | 2024-09-05 | Versum Materials Us, Llc | High Oxide Removal Rates Shallow Trench Isolation Chemical Mechanical Planarization Compositions |
| IL292956A (en) | 2019-11-26 | 2022-07-01 | Rhodia Operations | Liquid and powder dispersion of cerium-based core-shell particles, process for their production and use in polishing |
| TWI790509B (zh) | 2019-12-04 | 2023-01-21 | 美商慧盛材料美國責任有限公司 | 高氧化物膜移除速率的淺溝隔離(sti)化學機械平坦化(cmp)研磨 |
| CN114929821B (zh) | 2020-01-07 | 2023-12-19 | Cmc材料有限责任公司 | 经衍生的聚氨基酸 |
| TWI896417B (zh) * | 2020-08-31 | 2025-09-01 | 南韓商秀博瑞殷股份有限公司 | 氧化鈰粒子、其製造方法、包含其的化學機械研磨用漿料組合物以及半導體器件的製造方法 |
| CN114621682A (zh) * | 2020-12-11 | 2022-06-14 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其使用方法 |
| US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
| JP7682008B2 (ja) * | 2021-04-16 | 2025-05-23 | 花王株式会社 | 酸化珪素膜用研磨液組成物 |
| CN113201284B (zh) * | 2021-04-24 | 2022-03-11 | 深圳市撒比斯科技有限公司 | 一种高抛光度cmp抛光液及其制备方法 |
| WO2022243280A1 (en) | 2021-05-17 | 2022-11-24 | Rhodia Operations | Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing |
| KR102765948B1 (ko) * | 2021-05-20 | 2025-02-11 | 주식회사 한국나노오트 | 연마용 세리아 입자 및 이를 포함하는 슬러리 |
| KR102620964B1 (ko) * | 2021-07-08 | 2024-01-03 | 에스케이엔펄스 주식회사 | 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법 |
| WO2025132262A1 (en) | 2023-12-21 | 2025-06-26 | Rhodia Operations | Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing |
| WO2025141810A1 (ja) * | 2023-12-27 | 2025-07-03 | 株式会社レゾナック | 研磨液及び研磨方法 |
| WO2025190482A1 (en) | 2024-03-13 | 2025-09-18 | Rhodia Operations | Cerium oxide particles with cotrolled microstructure |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| WO2002067309A1 (en) * | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Polishing compound and method for polishing substrate |
| US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| JP2007531631A (ja) * | 2003-07-11 | 2007-11-08 | ダブリュー・アール・グレイス・アンド・カンパニー−コネチカット | 化学機械的研磨用研磨剤粒子 |
| CN1667026B (zh) | 2004-03-12 | 2011-11-30 | K.C.科技股份有限公司 | 抛光浆料及其制备方法和基板的抛光方法 |
| JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| US7531105B2 (en) | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| WO2008023858A1 (en) | 2006-08-25 | 2008-02-28 | Hanwha Chemical Corporation | Manufacturing methods of fine cerium oxide particles and its slurry for shallow trench isolation process of semiconductor |
| TWI673355B (zh) | 2008-04-23 | 2019-10-01 | 日商日立化成工業股份有限公司 | 研磨劑以及使用該研磨劑的基板研磨方法 |
| JP5827221B2 (ja) * | 2009-06-22 | 2015-12-02 | キャボット マイクロエレクトロニクス コーポレイション | ポリシリコン除去速度の抑制のためのｃｍｐ組成物および方法 |
| WO2011048889A1 (ja) * | 2009-10-22 | 2011-04-28 | 日立化成工業株式会社 | 研磨剤、濃縮１液式研磨剤、２液式研磨剤及び基板の研磨方法 |
| KR101191427B1 (ko) * | 2009-11-25 | 2012-10-16 | 주식회사 엘지화학 | 화학적 기계적 연마용 슬러리 조성물 및 이의 제조방법 |
| CN102911605A (zh) * | 2011-08-05 | 2013-02-06 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| SG10201606827RA (en) | 2012-02-21 | 2016-10-28 | Hitachi Chemical Co Ltd | Polishing agent, polishing agent set, and substrate polishing method |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| TWI456013B (zh) * | 2012-04-10 | 2014-10-11 | Uwiz Technology Co Ltd | 研磨液組成物 |
| US9633863B2 (en) * | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| KR101405334B1 (ko) * | 2013-09-12 | 2014-06-11 | 유비머트리얼즈주식회사 | 연마 입자의 제조 방법 및 연마 슬러리의 제조 방법 |
-
2015
- 2015-03-05 US US14/639,564 patent/US9505952B2/en active Active
-
2016
- 2016-03-01 WO PCT/US2016/020261 patent/WO2016140968A1/en not_active Ceased
- 2016-03-01 KR KR1020177027602A patent/KR102650942B1/ko active Active
- 2016-03-01 CN CN201680013843.2A patent/CN107427988B/zh active Active
- 2016-03-01 JP JP2017546138A patent/JP6748096B2/ja active Active
- 2016-03-01 EP EP16759356.5A patent/EP3265534B1/en active Active
- 2016-03-04 TW TW105106807A patent/TWI580769B/zh active
- 2016-10-31 US US15/338,724 patent/US9828528B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2018512475A5 (cg-RX-API-DMAC7.html) | ||
| JP2018513229A5 (cg-RX-API-DMAC7.html) | ||
| JP2017505532A5 (cg-RX-API-DMAC7.html) | ||
| JP2016538359A5 (cg-RX-API-DMAC7.html) | ||
| JP6530401B2 (ja) | 窒化ケイ素の選択的な除去のためのｃｍｐ組成物及び方法 | |
| KR102408747B1 (ko) | 혼합 마모제 텅스텐 cmp 조성물 | |
| TWI534220B (zh) | 研磨用組成物 | |
| JP6612790B2 (ja) | 銅バリアの化学機械研磨組成物 | |
| JP6775739B2 (ja) | スラリー、研磨液セット、研磨液及び基体の研磨方法 | |
| TWI323274B (en) | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios | |
| KR102632890B1 (ko) | 연마용 조성물 | |
| TWI609076B (zh) | 拋光粒子-分散層複合體及包括其之拋光漿料組合物 | |
| TW201038690A (en) | Abrasive compositions for chemical mechanical polishing and methods for using same | |
| TWI642771B (zh) | 具有陽離子界面活性劑的鎢加工漿液 | |
| JP6927982B2 (ja) | 触媒を含むタングステン処理スラリー | |
| CN107033787B (zh) | 抛光粒子-分散层复合体及包括此的抛光料浆组合物 | |
| JP6603309B2 (ja) | ゲルマニウムの化学機械研磨 | |
| TWI570198B (zh) | Abrasive composition | |
| JP2010538457A5 (cg-RX-API-DMAC7.html) | ||
| TW201922977A (zh) | 鎢化學機械拋光(cmp)之組合物 | |
| JP2010541203A5 (cg-RX-API-DMAC7.html) | ||
| KR20180052641A (ko) | 연마액, 연마액 세트 및 기체의 연마 방법 | |
| JP2011530401A5 (cg-RX-API-DMAC7.html) | ||
| TW201612292A (en) | Polishing agent and fabricating method thereof, method for polishing substrate, and polishing agent set and fabricating method thereof | |
| KR20160135767A (ko) | 텅스텐 버핑용 조성물 |