JP2018511935A5 - - Google Patents
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- Publication number
- JP2018511935A5 JP2018511935A5 JP2017544596A JP2017544596A JP2018511935A5 JP 2018511935 A5 JP2018511935 A5 JP 2018511935A5 JP 2017544596 A JP2017544596 A JP 2017544596A JP 2017544596 A JP2017544596 A JP 2017544596A JP 2018511935 A5 JP2018511935 A5 JP 2018511935A5
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- nitride layer
- metal nitride
- lid
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 14
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 4
- 239000003039 volatile agent Substances 0.000 claims description 4
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims description 3
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 claims description 2
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN551DE2015 | 2015-02-25 | ||
| IN551/DEL/2015 | 2015-02-25 | ||
| PCT/US2016/019484 WO2016138218A1 (en) | 2015-02-25 | 2016-02-25 | Methods and apparatus for using alkyl amines for the selective removal of metal nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018511935A JP2018511935A (ja) | 2018-04-26 |
| JP2018511935A5 true JP2018511935A5 (enExample) | 2019-04-11 |
Family
ID=56789186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017544596A Pending JP2018511935A (ja) | 2015-02-25 | 2016-02-25 | 金属窒化物を選択的に除去するためにアルキルアミンを使用する方法及び装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20180033643A1 (enExample) |
| JP (1) | JP2018511935A (enExample) |
| KR (1) | KR20170121243A (enExample) |
| CN (1) | CN107258010A (enExample) |
| TW (1) | TW201703130A (enExample) |
| WO (1) | WO2016138218A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10043684B1 (en) * | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10014185B1 (en) * | 2017-03-01 | 2018-07-03 | Applied Materials, Inc. | Selective etch of metal nitride films |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11984325B2 (en) * | 2021-07-12 | 2024-05-14 | Applied Materials, Inc. | Selective removal of transition metal nitride materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05283362A (ja) * | 1992-04-03 | 1993-10-29 | Sony Corp | 多層配線の形成方法 |
| JP3179212B2 (ja) * | 1992-10-27 | 2001-06-25 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6849471B2 (en) * | 2003-03-28 | 2005-02-01 | Reflectivity, Inc. | Barrier layers for microelectromechanical systems |
| JPH11163138A (ja) * | 1997-11-28 | 1999-06-18 | Sony Corp | 半導体装置の製造方法 |
| US6358788B1 (en) * | 1999-08-30 | 2002-03-19 | Micron Technology, Inc. | Method of fabricating a wordline in a memory array of a semiconductor device |
| JP4686006B2 (ja) * | 2000-04-27 | 2011-05-18 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法 |
| JP2005067164A (ja) * | 2003-08-28 | 2005-03-17 | Sony Corp | 液体吐出ヘッド、液体吐出装置及び液体吐出ヘッドの製造方法 |
| US20060016783A1 (en) * | 2004-07-22 | 2006-01-26 | Dingjun Wu | Process for titanium nitride removal |
| JP3889023B2 (ja) * | 2005-08-05 | 2007-03-07 | シャープ株式会社 | 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 |
| US20070117396A1 (en) * | 2005-11-22 | 2007-05-24 | Dingjun Wu | Selective etching of titanium nitride with xenon difluoride |
| JP5334199B2 (ja) * | 2008-01-22 | 2013-11-06 | ルネサスエレクトロニクス株式会社 | 容量素子を有する半導体装置 |
| JP5042162B2 (ja) * | 2008-08-12 | 2012-10-03 | 株式会社日立ハイテクノロジーズ | 半導体加工方法 |
| JP5590113B2 (ja) * | 2010-03-02 | 2014-09-17 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法 |
| JP5434970B2 (ja) * | 2010-07-12 | 2014-03-05 | セントラル硝子株式会社 | ドライエッチング剤 |
| US9831088B2 (en) * | 2010-10-06 | 2017-11-28 | Entegris, Inc. | Composition and process for selectively etching metal nitrides |
| WO2013101907A1 (en) * | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| KR102192281B1 (ko) * | 2012-07-16 | 2020-12-18 | 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 | 순수 환원성 플라즈마에서 높은 종횡비 포토레지스트 제거를 위한 방법 |
| US8987133B2 (en) * | 2013-01-15 | 2015-03-24 | International Business Machines Corporation | Titanium oxynitride hard mask for lithographic patterning |
| JP2014154866A (ja) * | 2013-02-14 | 2014-08-25 | Fujifilm Corp | ドライエッチング装置及びドライエッチング装置用のクランプ |
| JP6336866B2 (ja) * | 2013-10-23 | 2018-06-06 | 株式会社日立国際電気 | 半導体デバイスの製造方法、基板処理装置およびプログラム |
| US9543157B2 (en) * | 2014-09-30 | 2017-01-10 | Infineon Technologies Ag | Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer |
| JP6523091B2 (ja) * | 2015-07-24 | 2019-05-29 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP6462602B2 (ja) * | 2016-01-12 | 2019-01-30 | 信越化学工業株式会社 | 多層膜形成方法及びパターン形成方法 |
| US10522467B2 (en) * | 2016-07-06 | 2019-12-31 | Tokyo Electron Limited | Ruthenium wiring and manufacturing method thereof |
| US9941142B1 (en) * | 2017-01-12 | 2018-04-10 | International Business Machines Corporation | Tunable TiOxNy hardmask for multilayer patterning |
| US10014185B1 (en) * | 2017-03-01 | 2018-07-03 | Applied Materials, Inc. | Selective etch of metal nitride films |
-
2016
- 2016-02-25 KR KR1020177026904A patent/KR20170121243A/ko not_active Withdrawn
- 2016-02-25 WO PCT/US2016/019484 patent/WO2016138218A1/en not_active Ceased
- 2016-02-25 JP JP2017544596A patent/JP2018511935A/ja active Pending
- 2016-02-25 TW TW105105685A patent/TW201703130A/zh unknown
- 2016-02-25 CN CN201680010536.9A patent/CN107258010A/zh active Pending
- 2016-02-25 US US15/552,207 patent/US20180033643A1/en not_active Abandoned
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