JP2018511168A5 - - Google Patents

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Publication number
JP2018511168A5
JP2018511168A5 JP2017545244A JP2017545244A JP2018511168A5 JP 2018511168 A5 JP2018511168 A5 JP 2018511168A5 JP 2017545244 A JP2017545244 A JP 2017545244A JP 2017545244 A JP2017545244 A JP 2017545244A JP 2018511168 A5 JP2018511168 A5 JP 2018511168A5
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Japan
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patent document
application publication
patent application
documents cited
prior
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JP2017545244A
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Japanese (ja)
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JP2018511168A (ja
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Priority claimed from PCT/US2016/019917 external-priority patent/WO2016138468A1/en
Publication of JP2018511168A publication Critical patent/JP2018511168A/ja
Publication of JP2018511168A5 publication Critical patent/JP2018511168A5/ja
Pending legal-status Critical Current

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JP2017545244A 2015-02-27 2016-02-26 縦型電力装置内の表面装置 Pending JP2018511168A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562126240P 2015-02-27 2015-02-27
US62/126,240 2015-02-27
PCT/US2016/019917 WO2016138468A1 (en) 2015-02-27 2016-02-26 Surface devices within a vertical power device

Publications (2)

Publication Number Publication Date
JP2018511168A JP2018511168A (ja) 2018-04-19
JP2018511168A5 true JP2018511168A5 (enExample) 2019-04-25

Family

ID=56789964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017545244A Pending JP2018511168A (ja) 2015-02-27 2016-02-26 縦型電力装置内の表面装置

Country Status (6)

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US (2) US9755058B2 (enExample)
EP (1) EP3262678A4 (enExample)
JP (1) JP2018511168A (enExample)
KR (1) KR20170121224A (enExample)
CN (1) CN107851614A (enExample)
WO (1) WO2016138468A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10580884B2 (en) * 2017-03-08 2020-03-03 D3 Semiconductor LLC Super junction MOS bipolar transistor having drain gaps
CN111989778B (zh) * 2018-04-20 2024-02-13 艾鲍尔半导体 小间距超结mosfet结构和方法
US11764209B2 (en) * 2020-10-19 2023-09-19 MW RF Semiconductors, LLC Power semiconductor device with forced carrier extraction and method of manufacture
CN112560328B (zh) * 2020-11-18 2022-04-19 电子科技大学 基于表面微应变信号的igbt键合引线故障诊断方法
TWI826190B (zh) * 2022-12-16 2023-12-11 力晶積成電子製造股份有限公司 高頻電晶體
CN115939215B (zh) * 2022-12-16 2026-01-30 广微集成技术（深圳）有限公司 一种vdmos器件

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758759B2 (ja) * 1989-03-27 1995-06-21 日本電信電話株式会社 半導体装置
US5578841A (en) * 1995-12-18 1996-11-26 Motorola, Inc. Vertical MOSFET device having frontside and backside contacts
US6127701A (en) * 1997-10-03 2000-10-03 Delco Electronics Corporation Vertical power device with integrated control circuitry
JP3641547B2 (ja) * 1998-03-25 2005-04-20 株式会社豊田中央研究所 横型ｍｏｓ素子を含む半導体装置
EP1047133A1 (en) * 1999-04-23 2000-10-25 STMicroelectronics S.r.l. Method for producing devices for control circuits integrated in power devices
DE10202479A1 (de) * 2002-01-23 2003-08-07 Infineon Technologies Ag Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes
JP3634830B2 (ja) * 2002-09-25 2005-03-30 株式会社東芝 電力用半導体素子
JP2006049668A (ja) * 2004-08-06 2006-02-16 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2006048689A2 (en) * 2004-11-08 2006-05-11 Encesys Limited Integrated circuits and power supplies
DE102005009020B4 (de) * 2005-02-28 2012-04-26 Infineon Technologies Austria Ag Verfahren zur Erzeugung eines Leistungstransistors und damit erzeugbare integrierte Schaltungsanordnung
US7195952B2 (en) 2005-03-22 2007-03-27 Micrel, Inc. Schottky diode device with aluminum pickup of backside cathode
JP4971848B2 (ja) * 2006-03-22 2012-07-11 株式会社豊田中央研究所 低スイッチング損失、低ノイズを両立するパワーｍｏｓ回路
JP5217348B2 (ja) * 2006-12-06 2013-06-19 株式会社デンソー 半導体装置
US8427235B2 (en) * 2007-04-13 2013-04-23 Advanced Analogic Technologies, Inc. Power-MOSFETs with improved efficiency for multi-channel class-D audio amplifiers and packaging thereof
JP4678547B2 (ja) * 2007-11-06 2011-04-27 株式会社デンソー 半導体装置及びその製造方法
US7911023B2 (en) * 2007-11-06 2011-03-22 Denso Corporation Semiconductor apparatus including a double-sided electrode element and method for manufacturing the same
JP4737255B2 (ja) * 2007-11-20 2011-07-27 株式会社デンソー Ｓｏｉ基板を用いた半導体装置
JP2010141244A (ja) * 2008-12-15 2010-06-24 Mitsumi Electric Co Ltd 半導体装置
DE102009047763A1 (de) * 2009-12-10 2011-06-16 Robert Bosch Gmbh Hochstromkontaktierung und korrespondierendes Verfahren zur Herstellung einer Hochstromkontaktieranordnung
US8502346B2 (en) * 2010-12-23 2013-08-06 Alpha And Omega Semiconductor Incorporated Monolithic IGBT and diode structure for quasi-resonant converters
US9093286B2 (en) * 2010-12-23 2015-07-28 Alpha And Omega Semiconductor Incorporated Monolithic IGBT and diode structure for quai-resonant converters
US8461645B2 (en) * 2011-03-16 2013-06-11 Infineon Technologies Austria Ag Power semiconductor device
CN102201445B (zh) * 2011-04-14 2012-10-03 中北大学 一种psoi横向超结功率半导体器件
JP5959162B2 (ja) * 2011-06-09 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5630579B2 (ja) * 2011-06-09 2014-11-26 トヨタ自動車株式会社 半導体装置および半導体装置の製造方法
US8680645B2 (en) * 2011-08-09 2014-03-25 Infineon Technologies Austria Ag Semiconductor device and a method for forming a semiconductor device
JP5999748B2 (ja) * 2011-08-12 2016-09-28 ルネサスエレクトロニクス株式会社 パワーｍｏｓｆｅｔ、ｉｇｂｔおよびパワーダイオード
US9117687B2 (en) * 2011-10-28 2015-08-25 Texas Instruments Incorporated High voltage CMOS with triple gate oxide
US8941188B2 (en) 2012-03-26 2015-01-27 Infineon Technologies Austria Ag Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
US8610220B2 (en) 2012-05-16 2013-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with self-aligned interconnects
CN103151384A (zh) * 2013-03-07 2013-06-12 矽力杰半导体技术(杭州)有限公司 一种半导体装置及其制造方法
US9184237B2 (en) * 2013-06-25 2015-11-10 Cree, Inc. Vertical power transistor with built-in gate buffer
JP5991435B2 (ja) * 2013-07-05 2016-09-14 富士電機株式会社 半導体装置
US9337185B2 (en) * 2013-12-19 2016-05-10 Infineon Technologies Ag Semiconductor devices

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