JP2018510230A5 - - Google Patents

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Publication number
JP2018510230A5
JP2018510230A5 JP2017540578A JP2017540578A JP2018510230A5 JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5 JP 2017540578 A JP2017540578 A JP 2017540578A JP 2017540578 A JP2017540578 A JP 2017540578A JP 2018510230 A5 JP2018510230 A5 JP 2018510230A5
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JP
Japan
Prior art keywords
polishing composition
colloidal silica
silica particles
anionic surfactant
substrate
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JP2017540578A
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English (en)
Japanese (ja)
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JP6822966B2 (ja
JP2018510230A (ja
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Priority claimed from US14/612,736 external-priority patent/US9803109B2/en
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Publication of JP2018510230A5 publication Critical patent/JP2018510230A5/ja
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Publication of JP6822966B2 publication Critical patent/JP6822966B2/ja
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JP2017540578A 2015-02-03 2016-01-26 窒化ケイ素の除去のためのｃｍｐ組成物 Active JP6822966B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/612,736 2015-02-03
US14/612,736 US9803109B2 (en) 2015-02-03 2015-02-03 CMP composition for silicon nitride removal
PCT/US2016/014858 WO2016126458A1 (en) 2015-02-03 2016-01-26 Cmp composition for silicon nitride removal

Publications (3)

Publication Number Publication Date
JP2018510230A JP2018510230A (ja) 2018-04-12
JP2018510230A5 true JP2018510230A5 (https=) 2019-03-07
JP6822966B2 JP6822966B2 (ja) 2021-01-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017540578A Active JP6822966B2 (ja) 2015-02-03 2016-01-26 窒化ケイ素の除去のためのｃｍｐ組成物

Country Status (7)

Country Link
US (1) US9803109B2 (https=)
EP (1) EP3253843B1 (https=)
JP (1) JP6822966B2 (https=)
KR (1) KR102625476B1 (https=)
CN (1) CN107207910B (https=)
TW (1) TWI600615B (https=)
WO (1) WO2016126458A1 (https=)

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KR20210006641A (ko) * 2019-07-09 2021-01-19 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
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US12012540B2 (en) * 2021-05-26 2024-06-18 Entegris, Inc. Compositions and methods for selectively etching silicon nitride films
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物

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