TWI600615B - 用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物 - Google Patents

用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物 Download PDF

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Publication number
TWI600615B
TWI600615B TW105103564A TW105103564A TWI600615B TW I600615 B TWI600615 B TW I600615B TW 105103564 A TW105103564 A TW 105103564A TW 105103564 A TW105103564 A TW 105103564A TW I600615 B TWI600615 B TW I600615B
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TW
Taiwan
Prior art keywords
polishing composition
polishing
substrate
anionic surfactant
hydroxyl groups
Prior art date
Application number
TW105103564A
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English (en)
Chinese (zh)
Other versions
TW201639785A (zh
Inventor
黃宏聰
葉銘智
蔡智斌
Original Assignee
卡博特微電子公司
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Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201639785A publication Critical patent/TW201639785A/zh
Application granted granted Critical
Publication of TWI600615B publication Critical patent/TWI600615B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C09D1/02—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances alkali metal silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW105103564A 2015-02-03 2016-02-03 用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物 TWI600615B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/612,736 US9803109B2 (en) 2015-02-03 2015-02-03 CMP composition for silicon nitride removal

Publications (2)

Publication Number Publication Date
TW201639785A TW201639785A (zh) 2016-11-16
TWI600615B true TWI600615B (zh) 2017-10-01

Family

ID=56552860

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105103564A TWI600615B (zh) 2015-02-03 2016-02-03 用於移除氮化矽之化學機械拋光（ｃｍｐ）組合物

Country Status (7)

Country Link
US (1) US9803109B2 (https=)
EP (1) EP3253843B1 (https=)
JP (1) JP6822966B2 (https=)
KR (1) KR102625476B1 (https=)
CN (1) CN107207910B (https=)
TW (1) TWI600615B (https=)
WO (1) WO2016126458A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11499070B2 (en) * 2015-01-19 2022-11-15 Fujimi Incorporated Modified colloidal silica and method for producing the same, and polishing agent using the same
JP7032327B2 (ja) * 2016-05-19 2022-03-08 ドンジン セミケム カンパニー リミテッド 化学－機械的研磨用スラリー組成物
US10894901B2 (en) * 2016-07-15 2021-01-19 Fujimi Incorporated Method for producing polishing composition and polishing method
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
SG11201907230RA (en) 2017-02-24 2019-09-27 Illumina Inc Calcium carbonate slurry
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
JP2019062078A (ja) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
US11186748B2 (en) * 2017-09-28 2021-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
KR20200038014A (ko) * 2018-10-02 2020-04-10 주식회사 케이씨텍 표면처리 조성물 및 그것을 이용한 표면처리 방법
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
JP7041714B2 (ja) * 2019-06-26 2022-03-24 花王株式会社 酸化珪素膜用研磨液組成物
KR20210006641A (ko) * 2019-07-09 2021-01-19 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7440326B2 (ja) * 2020-04-01 2024-02-28 山口精研工業株式会社 研磨剤組成物
US12012540B2 (en) * 2021-05-26 2024-06-18 Entegris, Inc. Compositions and methods for selectively etching silicon nitride films
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101490201A (zh) * 2006-06-07 2009-07-22 卡伯特微电子公司 用于抛光氮化硅材料的组合物及方法
TW201005077A (en) * 2008-07-11 2010-02-01 Fujifilm Corp Silicon nitride polishing liquid and polishing method

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
KR100563166B1 (ko) * 1999-12-17 2006-03-27 캐보트 마이크로일렉트로닉스 코포레이션 기판의 연마 또는 평탄화 방법
JP4320375B2 (ja) 2001-11-15 2009-08-26 サムスン エレクトロニクス カンパニー リミテッド 添加剤組成物、これを含むスラリー組成物及び研磨方法
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
KR100596865B1 (ko) 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법
KR100582771B1 (ko) 2004-03-29 2006-05-22 한화석유화학 주식회사 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP2007207908A (ja) * 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
JP2007258606A (ja) * 2006-03-24 2007-10-04 Fujifilm Corp 化学的機械的研磨用研磨液
KR101032504B1 (ko) 2006-06-30 2011-05-04 주식회사 엘지화학 Ｃｍｐ 슬러리
JP2008112970A (ja) * 2006-10-05 2008-05-15 Hitachi Chem Co Ltd 研磨用組成物
JP5646996B2 (ja) * 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
TW200946621A (en) * 2007-10-29 2009-11-16 Ekc Technology Inc Chemical mechanical polishing and wafer cleaning composition comprising amidoxime compounds and associated method for use
JP4521058B2 (ja) * 2008-03-24 2010-08-11 株式会社Adeka 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物
JP2009289885A (ja) * 2008-05-28 2009-12-10 Fujifilm Corp 研磨液及び研磨方法
US9548211B2 (en) 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
SG10201401549SA (en) 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
EP2507824A4 (en) 2009-11-30 2013-09-25 Basf Se METHOD FOR REMOVING A MATERIAL MASS STATE OF A SUBSTRATE AND CHEMICAL-MECHANICAL CLEANING AGENT FOR THIS PROCESS
MY166785A (en) 2011-12-21 2018-07-23 Basf Se Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives
KR101612520B1 (ko) * 2012-05-10 2016-04-14 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 화학 첨가제를 지닌 화학적 기계적 폴리싱 조성물 및 이를 사용하는 방법
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
US8980750B2 (en) * 2012-07-06 2015-03-17 Basf Se Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101490201A (zh) * 2006-06-07 2009-07-22 卡伯特微电子公司 用于抛光氮化硅材料的组合物及方法
TW201005077A (en) * 2008-07-11 2010-02-01 Fujifilm Corp Silicon nitride polishing liquid and polishing method

Also Published As

Publication number Publication date
US20160222254A1 (en) 2016-08-04
US9803109B2 (en) 2017-10-31
KR20170109642A (ko) 2017-09-29
EP3253843A4 (en) 2018-07-04
KR102625476B1 (ko) 2024-01-17
JP6822966B2 (ja) 2021-01-27
WO2016126458A1 (en) 2016-08-11
CN107207910B (zh) 2021-03-09
EP3253843B1 (en) 2021-07-21
TW201639785A (zh) 2016-11-16
CN107207910A (zh) 2017-09-26
JP2018510230A (ja) 2018-04-12
EP3253843A1 (en) 2017-12-13

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